JP5780760B2 - ブリッジにおけるｇｍｒセンサの整合 - Google Patents

ブリッジにおけるｇｍｒセンサの整合 Download PDF

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JP5780760B2
JP5780760B2 JP2010530006A JP2010530006A JP5780760B2 JP 5780760 B2 JP5780760 B2 JP 5780760B2 JP 2010530006 A JP2010530006 A JP 2010530006A JP 2010530006 A JP2010530006 A JP 2010530006A JP 5780760 B2 JP5780760 B2 JP 5780760B2
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elements
dummy
bridge circuit
sensor
bridge
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JP2011501153A (ja
JP2011501153A5 (enExample
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ドゥーグ，マイケル・シー
テイラー，ウィリアム・ピー
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アレグロ・マイクロシステムズ・エルエルシー
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
JP2010530006A 2007-10-22 2008-09-08 ブリッジにおけるｇｍｒセンサの整合 Active JP5780760B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/876,048 2007-10-22
US11/876,048 US7795862B2 (en) 2007-10-22 2007-10-22 Matching of GMR sensors in a bridge
PCT/US2008/075556 WO2009055151A1 (en) 2007-10-22 2008-09-08 Matching of gmr sensors in a bridge

Publications (3)

Publication Number Publication Date
JP2011501153A JP2011501153A (ja) 2011-01-06
JP2011501153A5 JP2011501153A5 (enExample) 2011-06-02
JP5780760B2 true JP5780760B2 (ja) 2015-09-16

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JP2010530006A Active JP5780760B2 (ja) 2007-10-22 2008-09-08 ブリッジにおけるｇｍｒセンサの整合

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US (2) US7795862B2 (enExample)
JP (1) JP5780760B2 (enExample)
DE (1) DE112008002741T5 (enExample)
WO (1) WO2009055151A1 (enExample)

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US7859255B2 (en) 2010-12-28
DE112008002741T5 (de) 2010-11-25
US20090102464A1 (en) 2009-04-23
WO2009055151A1 (en) 2009-04-30
US7795862B2 (en) 2010-09-14
US20100283458A1 (en) 2010-11-11

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