DE112008002741T5 - Anpassung von GMR-Sensoren in einer Brücke - Google Patents
Anpassung von GMR-Sensoren in einer Brücke Download PDFInfo
- Publication number
- DE112008002741T5 DE112008002741T5 DE112008002741T DE112008002741T DE112008002741T5 DE 112008002741 T5 DE112008002741 T5 DE 112008002741T5 DE 112008002741 T DE112008002741 T DE 112008002741T DE 112008002741 T DE112008002741 T DE 112008002741T DE 112008002741 T5 DE112008002741 T5 DE 112008002741T5
- Authority
- DE
- Germany
- Prior art keywords
- elements
- dummy
- bridge circuit
- bridge
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006978 adaptation Effects 0.000 title description 4
- 230000005291 magnetic effect Effects 0.000 claims description 35
- 239000000523 sample Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 2
- 230000010363 phase shift Effects 0.000 claims description 2
- 238000013461 design Methods 0.000 description 13
- 230000000875 corresponding effect Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000003750 conditioning effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005426 magnetic field effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/876,048 US7795862B2 (en) | 2007-10-22 | 2007-10-22 | Matching of GMR sensors in a bridge |
| US11/876,048 | 2007-10-22 | ||
| PCT/US2008/075556 WO2009055151A1 (en) | 2007-10-22 | 2008-09-08 | Matching of gmr sensors in a bridge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112008002741T5 true DE112008002741T5 (de) | 2010-11-25 |
Family
ID=40111021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112008002741T Pending DE112008002741T5 (de) | 2007-10-22 | 2008-09-08 | Anpassung von GMR-Sensoren in einer Brücke |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7795862B2 (enExample) |
| JP (1) | JP5780760B2 (enExample) |
| DE (1) | DE112008002741T5 (enExample) |
| WO (1) | WO2009055151A1 (enExample) |
Families Citing this family (36)
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| US8269308B2 (en) * | 2008-03-19 | 2012-09-18 | Stats Chippac, Ltd. | Semiconductor device with cross-talk isolation using M-cap and method thereof |
| US8242776B2 (en) * | 2008-03-26 | 2012-08-14 | Everspin Technologies, Inc. | Magnetic sensor design for suppression of barkhausen noise |
| JP5440837B2 (ja) * | 2009-03-26 | 2014-03-12 | Ｔｄｋ株式会社 | 信号伝達装置 |
| CN103221790B (zh) * | 2010-11-18 | 2016-02-03 | 三菱电机株式会社 | 旋转角度检测装置 |
| DE102011104307B4 (de) * | 2011-06-16 | 2013-09-26 | Austriamicrosystems Ag | Anordnung und Verfahren zum Betreiben eines Sensors, insbesondere eines Brückensensors, und eine Sensoranordnung |
| CN102385043B (zh) * | 2011-08-30 | 2013-08-21 | 江苏多维科技有限公司 | Mtj三轴磁场传感器及其封装方法 |
| CN102426344B (zh) * | 2011-08-30 | 2013-08-21 | 江苏多维科技有限公司 | 三轴磁场传感器 |
| US8952686B2 (en) * | 2011-10-25 | 2015-02-10 | Honeywell International Inc. | High current range magnetoresistive-based current sensor |
| WO2013085547A1 (en) * | 2011-12-05 | 2013-06-13 | Advanced Microsensors Corporation | Magnetic field sensing apparatus and methods |
| US9322889B2 (en) | 2011-12-30 | 2016-04-26 | Nve Corporation | Low hysteresis high sensitivity magnetic field sensor |
| JP6222897B2 (ja) * | 2012-06-22 | 2017-11-01 | 旭化成エレクトロニクス株式会社 | 多軸磁気センサ、および、その製造方法 |
| US8779824B2 (en) | 2012-12-17 | 2014-07-15 | Qualcomm Incorporated | Clock distribution using MTJ sensing |
| US9865650B2 (en) * | 2012-12-20 | 2018-01-09 | Mark B. Johnson | Magnetic tunnel junction based logic circuits |
| US9754997B2 (en) * | 2012-12-20 | 2017-09-05 | Mark B. Johnson | Magnetic tunnel junction based reconfigurable processing system and components |
| CN103267955B (zh) * | 2013-05-28 | 2016-07-27 | 江苏多维科技有限公司 | 单芯片桥式磁场传感器 |
| EP2853905B1 (en) * | 2013-09-30 | 2018-09-19 | Airbus Defence and Space Limited | Phase angle measurement using residue number system analogue-to-digital conversion |
| JP2015121448A (ja) * | 2013-12-24 | 2015-07-02 | 株式会社デンソー | 磁気検出装置及びその製造方法 |
| CN103645449B (zh) * | 2013-12-24 | 2015-11-25 | 江苏多维科技有限公司 | 一种用于高强度磁场的单芯片参考桥式磁传感器 |
| US10649043B2 (en) | 2014-04-28 | 2020-05-12 | Infineon Technologies Ag | Magnetic field sensor device configured to sense with high precision and low jitter |
| DE102014106543A1 (de) * | 2014-05-09 | 2015-11-12 | Asm Assembly Systems Gmbh & Co. Kg | Gurtförderer für einen Bestückautomaten sowie Bestückautomat |
| US9519034B2 (en) | 2014-05-15 | 2016-12-13 | Everspin Technologies, Inc. | Bipolar chopping for 1/F noise and offset reduction in magnetic field sensors |
| EP3062120A1 (en) * | 2015-02-26 | 2016-08-31 | BIOTRONIK SE & Co. KG | Magnetic field sensor arrangement |
| US10036785B2 (en) | 2016-07-18 | 2018-07-31 | Allegro Microsystems, Llc | Temperature-compensated magneto-resistive sensor |
| US10921373B2 (en) * | 2017-11-29 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor able to identify an error condition |
| JP7062935B2 (ja) * | 2017-12-14 | 2022-05-09 | 富士電機株式会社 | 電流センサ、電流センサの製造方法および半導体装置 |
| US10948555B2 (en) | 2019-05-23 | 2021-03-16 | Allegro Microsystems, Llc | Magnetic field sensor and magnetoresistance element structure having at least two magnetoresistance elements disposed in a proximate arrangement |
| US11933641B2 (en) | 2020-01-15 | 2024-03-19 | Honeywell International Inc. | Position detection apparatus, method, and system utilizing an array of magnetic sensors each comprising a sensor signal conditioning circuit |
| US11187764B2 (en) | 2020-03-20 | 2021-11-30 | Allegro Microsystems, Llc | Layout of magnetoresistance element |
| US11262422B2 (en) | 2020-05-08 | 2022-03-01 | Allegro Microsystems, Llc | Stray-field-immune coil-activated position sensor |
| US11493361B2 (en) | 2021-02-26 | 2022-11-08 | Allegro Microsystems, Llc | Stray field immune coil-activated sensor |
| US11953565B2 (en) | 2021-03-23 | 2024-04-09 | Allegro Microsystems, Llc | Electrical offset compensating in a bridge using more than four magnetoresistance elements |
| US12146928B2 (en) * | 2021-04-12 | 2024-11-19 | Analog Devices International Unlimited Company | Magnetic field sensor with overcurrent detection |
| US12078695B2 (en) | 2021-04-12 | 2024-09-03 | Analog Devices International Unlimited Company | Magnetic field sensor with overcurrent detection |
| EP4130772B1 (en) | 2021-08-05 | 2025-07-23 | Allegro MicroSystems, LLC | Magnetoresistive element having compensated temperature coefficient of tmr |
| US12248039B2 (en) | 2023-08-08 | 2025-03-11 | Allegro Microsystems, Llc | Interleaving sub-arrays of magnetoresistance elements based on reference directions to compensate for bridge offset |
| US12467990B2 (en) | 2023-08-30 | 2025-11-11 | Allegro Microsystems, Llc | Magnetoresistance signal path compensation |
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- 2008-09-08 DE DE112008002741T patent/DE112008002741T5/de active Pending
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2010
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5780760B2 (ja) | 2015-09-16 |
| US20090102464A1 (en) | 2009-04-23 |
| US20100283458A1 (en) | 2010-11-11 |
| WO2009055151A1 (en) | 2009-04-30 |
| US7859255B2 (en) | 2010-12-28 |
| JP2011501153A (ja) | 2011-01-06 |
| US7795862B2 (en) | 2010-09-14 |
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