JP5779362B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5779362B2 JP5779362B2 JP2011031654A JP2011031654A JP5779362B2 JP 5779362 B2 JP5779362 B2 JP 5779362B2 JP 2011031654 A JP2011031654 A JP 2011031654A JP 2011031654 A JP2011031654 A JP 2011031654A JP 5779362 B2 JP5779362 B2 JP 5779362B2
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Description
本発明の一態様に係るトランジスタの構成について図1乃至図6を参照して説明する。
実施の形態1で示すトランジスタと同様の作用効果を奏するトランジスタの一例を図面を参照して説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
実施の形態1又は実施の形態2で一例を示したトランジスタを用いて表示装置を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
実施の形態1又は実施の形態2で一例を示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
本発明により開示される表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した液晶表示装置を具備する電子機器の例について説明する。
Claims (5)
- ゲート電極と、ゲート絶縁層と、酸化物半導体層と、を有するトランジスタを有し、
前記トランジスタは、前記酸化物半導体層の少なくとも一部の領域に350nmの波長又は400nm以上410nm以下の波長の光を1×1013個/cm2・secのフォトン数で90秒間照射したときに、前記光の照射中のしきい値電圧の変動量の絶対値が0.65V以下であるという電気特性を有する半導体装置の作製方法であって、
窒素又は希ガスを導入した加熱処理装置において、前記酸化物半導体層に対して第1の加熱処理を行い、
前記第1の加熱処理後に、前記加熱処理装置に酸素ガス又はN2Oガスを導入することを特徴とする半導体装置の作製方法。 - ゲート電極と、ゲート絶縁層と、酸化物半導体層と、を有するトランジスタを有し、
前記トランジスタは、前記酸化物半導体層の少なくとも一部の領域に350nmの波長又は400nm以上410nm以下の波長の光を10μW/cm2の強度で90秒間照射したときに、前記光の照射中のしきい値電圧の変動量の絶対値が0.65V以下であるという電気特性を有する半導体装置の作製方法であって、
窒素又は希ガスを導入した加熱処理装置において、前記酸化物半導体層に対して第1の加熱処理を行い、
前記第1の加熱処理後に、前記加熱処理装置に酸素ガス又はN2Oガスを導入することを特徴とする半導体装置の作製方法。 - 請求項1又は請求項2において、
前記酸化物半導体層の少なくとも一部と接する絶縁層を形成し、
前記酸化物半導体層の一部と前記絶縁層とが接した状態で、不活性ガス雰囲気下又は酸素ガス雰囲気下で第2の加熱処理を行うことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記窒素又は希ガスの純度は6N以上であり、
前記酸素ガス又はN2Oガスの純度は6N以上であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記酸化物半導体層は、キャリア濃度が1×1014/cm3未満である領域を有することを特徴とする半導体装置の作製方法。
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US20110204368A1 (en) | 2011-08-25 |
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