JP5774261B2 - 炭化シリコン自己整合エピタキシャルmosfetおよびその製造方法 - Google Patents
炭化シリコン自己整合エピタキシャルmosfetおよびその製造方法 Download PDFInfo
- Publication number
- JP5774261B2 JP5774261B2 JP2008046020A JP2008046020A JP5774261B2 JP 5774261 B2 JP5774261 B2 JP 5774261B2 JP 2008046020 A JP2008046020 A JP 2008046020A JP 2008046020 A JP2008046020 A JP 2008046020A JP 5774261 B2 JP5774261 B2 JP 5774261B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- trench
- manufacturing
- oxide
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 51
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 claims description 56
- 239000002019 doping agent Substances 0.000 claims description 42
- 125000006850 spacer group Chemical group 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/903—Catalyst aided deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
Description
Claims (13)
- MOSFETの製造方法であって、
第1層中にトレンチを形成する工程であって、第1層は対向する第1表面と第2表面とを有し、トレンチは第1表面から第1層中に延びる工程と、
トレンチ内と第1層の第1表面の上とに、第2層をエピタキシャル成長させ、続いて第3層をエピタキシャル成長させる工程と、
トレンチ内の第3層の上に第1酸化層を形成する工程と、
第1酸化層が酸化スペーサとして残り、酸化スペーサの間に第3層が露出するように第1酸化層をエッチングする工程と、
酸化スペーサをマスクに用いて第1層と第2層とをエッチングして第1表面を露出させ、トレンチの中央領域内の、第3層と第2層の一部を除去し、トレンチの周辺領域の第2層の表面を露出させ、第1構造を形成する工程と、
第1構造全体の上に、ゲート酸化層を形成する工程と、
第2層の表面上のゲート酸化層の上に、ゲート電極を形成する工程と、
トレンチの中央領域内の、ゲート酸化層をエッチングする工程と、
トレンチの中央領域内に、第2層および第3層とコンタクトしたソース電極を形成する工程と、
第1層の第2表面の上に、ドレイン電極を形成する工程と、を含み、
第1層と第3層は、第2層の導電型と反対の導電型を有することを特徴とするMOSFETの製造方法。 - 更に、第2層のエピタキシャル成長前に、トレンチの底面に不純物領域を注入する工程であって、不純物領域は、第2導電型で、第2層のドーパント濃度より高いドーパント濃度を有する工程を含むことを特徴とする請求項1に記載のMOSFETの製造方法。
- 第2層は、第2層の表面近傍で最も低いドーパント濃度となる不均一なドーパントプロファイルを有するようにエピタキシャル成長させることを特徴とする請求項1に記載のMOSFETの製造方法。
- 第1層は、トレンチの底面近傍で最も低くなり、第1表面および第2表面近傍でより大きくなるドーパント濃度となるように、第1表面から第2表面への垂直方向に傾斜したドーパントプロファイルを有するようにエピタキシャル成長されたことを特徴とする請求項1に記載のMOSFETの製造方法。
- 第1導電型はn型であり、第2導電型はp型である請求項1に記載のMOSFETの製造方法。
- 第1、第2、および第3層は、炭化シリコンである請求項1に記載のMOSFETの製造方法。
- MOSFETの製造方法であって、
第1層中にトレンチを形成する工程であって、第1層は第1導電型で対向する第1表面と第2表面とを有し、トレンチは第1表面から第1層中に延びる工程と、
トレンチ内と第1層の第1表面の上に、第2層をエピタキシャル成長させる工程であって、第2層は、第1導電型と反対の第2導電型を有する工程と、
トレンチ内の第2層の上と第1層の第1表面の上に、第3層をエピタキシャル成長させる工程であって、第3層は、第1導電型を有する工程と、
トレンチ内の第3層の上と第1層の第1表面の上に、第1酸化層を形成する工程と、
第1酸化層が、酸化スペーサとしてトレンチの上にのみ残り、酸化スペーサの間に第3層が露出するように、第1酸化層を実質的に垂直にエッチングし、第1構造を提供する工程と、
酸化スペーサをマスクに用いて第1構造をエッチングして第1表面を露出させ、酸化スペーサの間の第3層と第2層の一部を除去し、酸化スペーサの間に無いトレンチ内の第2層の表面を露出させ、第2構造を形成する工程と、
第2構造全体の上に、ゲート酸化層を形成する工程と、
第2層の表面上のゲート酸化層の上に、ゲート電極を形成する工程と、
酸化スペーサの間の、ゲート酸化層をエッチングする工程と、
酸化スペーサの間に、第2層および第3層とコンタクトしたソース電極を形成する工程と、
第1層の第2表面の上に、ドレイン電極を形成する工程と、を含むMOSFETの製造方法。 - 更に、第2層のエピタキシャル成長前に、トレンチの底面に不純物領域を注入する工程であって、不純物領域は、第2導電型で、第2層のドーパント濃度より大きいドーパント濃度を有する工程を含むことを特徴とする請求項7に記載のMOSFETの製造方法。
- 第2層は、第2層の表面近傍でドーパント濃度が最も低くなる不均一なドーパントプロファイルを有するようにエピタキシャル成長される請求項7に記載のMOSFETの製造方法。
- 第1層は、第1表面から第2表面への垂直方向に傾斜したドーパントプロファイルを有し、ドーパント濃度は、トレンチの底面近傍で最も低くなり、第1表面と第2表面の近傍でより大きくなるようにエピタキシャル成長されることを特徴とする請求項7に記載のMOSFETの製造方法。
- 第1層、第2層、および第3層は、炭化シリコンである請求項7に記載のMOSFETの製造方法。
- 第1導電型はn型であり、第2導電型はp型である請求項7に記載のMOSFETの製造方法。
- ゲート酸化層のエッチング工程は、反応性イオンエッチングプロセスと化学ウエットエッチングプロセスを用いて、ゲート酸化層と酸化スペーサの一部をエッチングする工程を含む請求項7に記載のMOSFETの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/711,703 | 2007-02-28 | ||
US11/711,703 US7629616B2 (en) | 2007-02-28 | 2007-02-28 | Silicon carbide self-aligned epitaxial MOSFET for high powered device applications |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008227486A JP2008227486A (ja) | 2008-09-25 |
JP5774261B2 true JP5774261B2 (ja) | 2015-09-09 |
Family
ID=39580673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008046020A Active JP5774261B2 (ja) | 2007-02-28 | 2008-02-27 | 炭化シリコン自己整合エピタキシャルmosfetおよびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7629616B2 (ja) |
EP (1) | EP1965436B1 (ja) |
JP (1) | JP5774261B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102576723B (zh) | 2009-10-23 | 2014-09-24 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
JP2012089612A (ja) * | 2010-10-18 | 2012-05-10 | Sumitomo Electric Ind Ltd | 炭化珪素基板を有する複合基板 |
US8765609B2 (en) * | 2012-07-25 | 2014-07-01 | Power Integrations, Inc. | Deposit/etch for tapered oxide |
JP5961563B2 (ja) * | 2013-01-25 | 2016-08-02 | 株式会社豊田中央研究所 | 半導体装置の製造方法 |
JP6179409B2 (ja) | 2014-01-24 | 2017-08-16 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
DE102014206357A1 (de) * | 2014-04-03 | 2015-10-08 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Substrats, Substrat, Metall-Oxid-Halbleiter-Feldeffekttransistor mit einem Substrat, mikroelektromechanisches System mit einem Substrat, und Kraftfahrzeug |
US9496149B2 (en) * | 2014-04-14 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods for manufacturing the same |
JP6406274B2 (ja) * | 2016-02-05 | 2018-10-17 | 株式会社デンソー | 半導体装置 |
JP6616280B2 (ja) * | 2016-12-27 | 2019-12-04 | トヨタ自動車株式会社 | スイッチング素子 |
JP6549552B2 (ja) | 2016-12-27 | 2019-07-24 | トヨタ自動車株式会社 | スイッチング素子の製造方法 |
CN109841515B (zh) * | 2017-11-24 | 2022-04-15 | 帅群微电子股份有限公司 | 制作半导体元件的方法 |
CN109148588A (zh) * | 2018-08-28 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | 沟槽栅mosfet及制造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0834311B2 (ja) * | 1987-06-10 | 1996-03-29 | 日本電装株式会社 | 半導体装置の製造方法 |
JP2809662B2 (ja) * | 1989-01-24 | 1998-10-15 | 沖電気工業株式会社 | 二重拡散型mosfet装置の製造方法 |
US6573534B1 (en) | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
JP3638189B2 (ja) * | 1996-12-27 | 2005-04-13 | 日本インター株式会社 | 電界効果トランジスタの製造方法 |
JP3600406B2 (ja) * | 1997-06-19 | 2004-12-15 | 三菱電機株式会社 | SiC半導体装置とその製造方法 |
JP3180895B2 (ja) * | 1997-08-18 | 2001-06-25 | 富士電機株式会社 | 炭化けい素半導体装置の製造方法 |
JP3421588B2 (ja) * | 1997-09-16 | 2003-06-30 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
US6297533B1 (en) * | 1997-12-04 | 2001-10-02 | The Whitaker Corporation | LDMOS structure with via grounded source |
SE9900358D0 (sv) | 1999-02-03 | 1999-02-03 | Ind Mikroelektronikcentrum Ab | A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor |
GB9928285D0 (en) * | 1999-11-30 | 2000-01-26 | Koninkl Philips Electronics Nv | Manufacture of trench-gate semiconductor devices |
DE10217610B4 (de) | 2002-04-19 | 2005-11-03 | Infineon Technologies Ag | Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren |
JP2004031471A (ja) * | 2002-06-24 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 炭化珪素半導体素子及びその製造方法 |
US7221010B2 (en) * | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
CN102637740B (zh) * | 2004-02-27 | 2014-12-10 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
JP2006190733A (ja) * | 2005-01-04 | 2006-07-20 | Nec Electronics Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
US7595241B2 (en) * | 2006-08-23 | 2009-09-29 | General Electric Company | Method for fabricating silicon carbide vertical MOSFET devices |
-
2007
- 2007-02-28 US US11/711,703 patent/US7629616B2/en active Active
-
2008
- 2008-02-22 EP EP08250627.0A patent/EP1965436B1/en active Active
- 2008-02-27 JP JP2008046020A patent/JP5774261B2/ja active Active
-
2009
- 2009-10-22 US US12/603,603 patent/US7994017B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2008227486A (ja) | 2008-09-25 |
EP1965436B1 (en) | 2016-02-17 |
US20100041195A1 (en) | 2010-02-18 |
US7629616B2 (en) | 2009-12-08 |
EP1965436A3 (en) | 2009-04-29 |
EP1965436A2 (en) | 2008-09-03 |
US20080203398A1 (en) | 2008-08-28 |
US7994017B2 (en) | 2011-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5774261B2 (ja) | 炭化シリコン自己整合エピタキシャルmosfetおよびその製造方法 | |
US9559188B2 (en) | Trench gate type semiconductor device and method of producing the same | |
US10355123B2 (en) | Silicon-carbide trench gate MOSFETs and methods of manufacture | |
TWI421948B (zh) | 具改良性能之功率半導體裝置及其方法 | |
JP3217690B2 (ja) | 半導体装置の製造方法 | |
US20100187602A1 (en) | Methods for making semiconductor devices using nitride consumption locos oxidation | |
US20110018004A1 (en) | Semiconductor device with large blocking voltage and manufacturing method thereof | |
JPWO2009050871A1 (ja) | 半導体装置およびその製造方法 | |
JPH11238742A (ja) | 炭化珪素半導体装置の製造方法 | |
JP2006066439A (ja) | 半導体装置およびその製造方法 | |
CN110473911B (zh) | 一种SiC MOSFET器件及其制作方法 | |
JPH09283535A (ja) | 半導体装置の製造方法 | |
US6887760B2 (en) | Fabrication process of a trench gate power MOS transistor with scaled channel | |
JP2005039257A (ja) | 半導体装置及びその製造方法 | |
JP4842527B2 (ja) | 半導体装置の製造方法 | |
JP2006114834A (ja) | 半導体装置 | |
US8659057B2 (en) | Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making | |
TWI829085B (zh) | 的碳化矽金屬氧化物半導體場效電晶體 | |
US20090026497A1 (en) | Method for Producing Semiconductor Device | |
US11616123B2 (en) | Enhancement on-state power semiconductor device characteristics utilizing new cell geometries | |
TWI795286B (zh) | 浮動保護環耐壓的穩定方法 | |
US6417050B1 (en) | Semiconductor component and method of manufacture | |
CN114914303A (zh) | 用于制造垂直型基于鳍片的jfet的方法和系统 | |
KR20000041953A (ko) | 반도체 소자의 제조방법 | |
TW200411780A (en) | Self-aligned trench power metal oxide semiconductor field effect transistor device and its manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101105 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130108 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130405 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130410 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130507 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130510 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130610 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130613 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140228 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140729 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20141118 |
|
RD13 | Notification of appointment of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7433 Effective date: 20141118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20141118 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20141216 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150508 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150602 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150701 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5774261 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |