JP2008227486A - 炭化シリコン自己整合エピタキシャルmosfetおよびその製造方法 - Google Patents
炭化シリコン自己整合エピタキシャルmosfetおよびその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 56
- 239000002019 doping agent Substances 0.000 claims description 46
- 125000006850 spacer group Chemical group 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 18
- 238000001020 plasma etching Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000005669 field effect Effects 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 3
- 150000004706 metal oxides Chemical class 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010348 incorporation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Abstract
【解決手段】自己整合の炭化シリコンパワー金属酸化物半導体電界効果トランジスタは、第1層に形成されたトレンチを含み、トレンチ内には、ベース領域と、続いてソース領域がエピタキシャル成長され、トレンチの中央領域で、ソース領域を通ってベース領域の中までウインドウが形成され、ソースコンタクトは、ベース領域およびソース領域にコンタクトするようにウインドウ内に形成され、ゲート酸化層は、トレンチの周辺領域のソース領域とベース領域の上および第1層の表面上に形成され、ゲート電極は、トレンチの周辺領域のベース領域の上方に形成され、ドレイン電極は、第1層の第2表面の上に形成される。
【選択図】図10
Description
Claims (19)
- 対向する第1表面と第2表面と、第1表面から第1層中に延びたトレンチを有し、第1導電型である第1層と、
トレンチ内の、トレンチの側壁と底面の上に形成され、第1導電型と反対の第2導電型である第1エピタキシャル層と、
トレンチ内の、第1エピタキシャル層の上に形成され、第1導電型である第2エピタキシャル層と、
トレンチの上方の、第2エピタキシャル層の上に形成された酸化スペーサと、
トレンチ内の酸化スペーサ層の間にあり、第1エピタキシャル層と第2エピタキシャル層とにコンタクトしたソースコンタクトと、
第1層の第1表面の上と、酸化スペーサの間に無いトレンチの上方の第1エピタキシャル層の表面の上とに形成されたゲート酸化層と、
第1エピタキシャル層の表面の上の、酸化層の上のゲート電極と、
第1層の第2表面の上のドレイン電極と、を含むMOSFET。 - 更に、トレンチの底面に不純物領域を含み、不純物領域は、第2導電型で、第1エピタキシャル層のドーパント濃度より大きなドーパント濃度を有する請求項1に記載のMOSFET。
- 第1エピタキシャル層は、第1エピタキシャル層の表面近傍でドーパント濃度が最も低くなる不均一なドーパントプロファイルを有する請求項1に記載のMOSFET。
- 第1層は、第1表面から第2表面への垂直方向に傾斜したドーパントプロファイルを有し、ドーパント濃度は、トレンチの底面近傍で最も低くなり、第1表面と第2表面の近傍でより大きくなることを特徴とする請求項1に記載のMOSFET。
- 第1層、第1エピタキシャル層、第2エピタキシャル層は、炭化シリコンである請求項1に記載のMOSFET。
- 第1導電型はn型であり、第2導電型はp型である請求項1に記載のMOSFET。
- MOSFETの製造方法であって、
第1層中にトレンチを形成する工程であって、第1層は対向する第1表面と第2表面とを有し、トレンチは第1表面から第1層中に延びる工程と、
トレンチ内と第1層の第1表面の上とに、第2層と、続いて第3層をエピタキシャル成長させる工程と、
マスクを用いて第1層と第2層とをエッチングして第1表面を露出させ、トレンチの中央領域内の、第3層と第2層の一部を除去し、トレンチの周辺領域の第2層の表面を露出させ、第1構造を形成する工程と、
第1構造全体の上に、ゲート酸化層を形成する工程と、
第2層の表面上のゲート酸化層の上に、ゲート電極を形成する工程と、
トレンチの中央領域内の、ゲート酸化層をエッチングする工程と、
トレンチの中央領域内に、第2層および第3層とコンタクトしたソース電極を形成する工程と、
第1層の第2表面の上に、ドレイン電極を形成する工程と、を含み、
第1層と第3層は、第2層の導電型と反対の導電型を有することを特徴とするMOSFETの製造方法。 - 更に、第2層のエピタキシャル成長前に、トレンチの底面に不純物領域を注入する工程であって、不純物領域は、第2導電型で、第2層のドーパント濃度より高いドーパント濃度を有する工程を含むことを特徴とする請求項7に記載のMOSFETの製造方法。
- 第2層は、第2層の表面近傍で最も低いドーパント濃度となる不均一なドーパントプロファイルを有するようにエピタキシャル成長させることを特徴とする請求項7に記載のMOSFETの製造方法。
- 第1層は、トレンチの底面近傍で最も低くなり、第1表面および第2表面近傍でより大きくなるドーパント濃度となるように、第1表面から第2表面への垂直方向に傾斜したドーパントプロファイルを有するようにエピタキシャル成長されたことを特徴とする請求項7に記載のMOSFETの製造方法。
- 第1導電型はn型であり、第2導電型はp型である請求項7に記載のMOSFETの製造方法。
- 第1、第2、および第3層は、炭化シリコンである請求項7に記載のMOSFETの製造方法。
- MOSFETの製造方法であって、
第1層中にトレンチを形成する工程であって、第1層は第1導電型で対向する第1表面と第2表面とを有し、トレンチは第1表面から第1層中に延びる工程と、
トレンチ内と第1層の第1表面の上に、第2層をエピタキシャル成長させる工程であって、第2層は、第1導電型と反対の第2導電型を有する工程と、
トレンチ内の第2層の上と第1層の第1表面の上に、第3層をエピタキシャル成長させる工程であって、第3層は、第1導電型を有する工程と、
トレンチ内の第3層の上と第1層の第1表面の上に、第1酸化層を形成する工程と、
第1酸化層が、酸化スペーサとしてトレンチの上にのみ残り、酸化スペーサの間に第3層が露出するように、第1酸化層を実質的に垂直にエッチングし、第1構造を提供する工程と、
酸化スペーサをマスクに用いて第1構造をエッチングして第1表面を露出させ、酸化スペーサの間の第3層と第2層の一部を除去し、酸化スペーサの間に無いトレンチ内の第2層の表面を露出させ、第2構造を形成する工程と、
第2構造全体の上に、ゲート酸化層を形成する工程と、
第2層の表面上のゲート酸化層の上に、ゲート電極を形成する工程と、
酸化スペーサの間の、ゲート酸化層をエッチングする工程と、
酸化スペーサの間に、第2層および第3層とコンタクトしたソース電極を形成する工程と、
第1層の第2表面の上に、ドレイン電極を形成する工程と、を含むMOSFETの製造方法。 - 更に、第2層のエピタキシャル成長前に、トレンチの底面に不純物領域を注入する工程であって、不純物領域は、第2導電型で、第2層のドーパント濃度より大きいドーパント濃度を有する工程を含むことを特徴とする請求項13に記載のMOSFETの製造方法。
- 第2層は、第2層の表面近傍でドーパント濃度が最も低くなる不均一なドーパントプロファイルを有するようにエピタキシャル成長される請求項13に記載のMOSFETの製造方法。
- 第1層は、第1表面から第2表面への垂直方向に傾斜したドーパントプロファイルを有し、ドーパント濃度は、トレンチの底面近傍で最も低くなり、第1表面と第2表面の近傍でより大きくなるようにエピタキシャル成長されることを特徴とする請求項13に記載のMOSFETの製造方法。
- 第1層、第2層、および第3層は、炭化シリコンである請求項13に記載のMOSFETの製造方法。
- 第1導電型はn型であり、第2導電型はp型である請求項13に記載のMOSFETの製造方法。
- ゲート酸化層のエッチング工程は、反応性イオンエッチングプロセスと化学ウエットエッチングプロセスを用いて、ゲート酸化層と酸化スペーサの一部をエッチングする工程を含む請求項13に記載のMOSFETの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/711,703 | 2007-02-28 | ||
US11/711,703 US7629616B2 (en) | 2007-02-28 | 2007-02-28 | Silicon carbide self-aligned epitaxial MOSFET for high powered device applications |
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JP2008227486A true JP2008227486A (ja) | 2008-09-25 |
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JP2012089612A (ja) * | 2010-10-18 | 2012-05-10 | Sumitomo Electric Ind Ltd | 炭化珪素基板を有する複合基板 |
US8765609B2 (en) * | 2012-07-25 | 2014-07-01 | Power Integrations, Inc. | Deposit/etch for tapered oxide |
JP6179409B2 (ja) | 2014-01-24 | 2017-08-16 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
DE102014206357A1 (de) * | 2014-04-03 | 2015-10-08 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Substrats, Substrat, Metall-Oxid-Halbleiter-Feldeffekttransistor mit einem Substrat, mikroelektromechanisches System mit einem Substrat, und Kraftfahrzeug |
US9496149B2 (en) | 2014-04-14 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods for manufacturing the same |
JP6406274B2 (ja) * | 2016-02-05 | 2018-10-17 | 株式会社デンソー | 半導体装置 |
JP6616280B2 (ja) | 2016-12-27 | 2019-12-04 | トヨタ自動車株式会社 | スイッチング素子 |
JP6549552B2 (ja) | 2016-12-27 | 2019-07-24 | トヨタ自動車株式会社 | スイッチング素子の製造方法 |
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US20080203398A1 (en) | 2008-08-28 |
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EP1965436B1 (en) | 2016-02-17 |
US7629616B2 (en) | 2009-12-08 |
US20100041195A1 (en) | 2010-02-18 |
US7994017B2 (en) | 2011-08-09 |
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