JP2014143346A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2014143346A JP2014143346A JP2013011918A JP2013011918A JP2014143346A JP 2014143346 A JP2014143346 A JP 2014143346A JP 2013011918 A JP2013011918 A JP 2013011918A JP 2013011918 A JP2013011918 A JP 2013011918A JP 2014143346 A JP2014143346 A JP 2014143346A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 197
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
【解決手段】半導体装置の製造方法は、第1範囲1Aと第2範囲2Aを含む表面を有するドリフト層11の第1範囲1Aに第1トレンチ21を形成する工程と、第1トレンチ21を形成した後に、ドリフト層11の表面にp型のベース層12を結晶成長させる工程と、ベース層12の表面にn型のソース層13を結晶成長させる工程と、を備えている。ドリフト層11、ベース層12、及びソース層13の材料がワイドギャップ半導体である。
【選択図】図3
Description
(特徴2)本明細書で開示される半導体装置の製造方法は、第1範囲と第2範囲を含む表面を有する半導体層の第1範囲に第1トレンチを形成する工程、半導体層の表面に第1導電型のベース層を結晶成長させる工程、及びベース層の表面に第2導電型のソース層を結晶成長させる工程を備える。なお、ベース層を結晶成長させる前に他の層を形成してもよく、ベース層とソース層の間に他の層を形成してもよい。ここで、半導体層の表面は、第1範囲と第2範囲の他に、他の範囲を有していてもよい。例えば、半導体層の表面は、半導体装置の素子領域に対応した位置に第1範囲と第2範囲を有し、半導体装置の終端領域に対応した位置に他の範囲を有していてもよい。ベース層は、ボディ層と称されることもある。ソース層は、エミッタ層と称されることもある。
(特徴3)本明細書で開示される半導体装置の製造方法の一例は、半導体層の第2範囲上に存在するソース層及びベース層の少なくとも一部を貫通して半導体層に接する第2トレンチを形成する工程、及び第2トレンチ内に絶縁トレンチゲートを形成する工程をさらに備えていてもよい。この製造方法によれば、絶縁トレンチゲートの周囲に深いベース層が配置された形態となるので、高耐圧な半導体装置が得られる。
(特徴4)特徴3の製造方法はさらに、第2トレンチを形成するのに先立って、ソース層の表面にマスク層を形成する工程、及びマスク層の表面から所定厚みをエッチングし、半導体層の第1範囲上にマスク層を選択的に残存させる工程をさらに備えていてもよい。この場合、第2トレンチを形成する工程では、マスク層をマスクとして第2トレンチを形成する。この製造方法では、第1トレンチの形態が反映した溝を利用してマスク層を選択的にパターニングすることができる。このため、この製造方法では、マスク層をパターニングするためのフォトマスクを必要としないので、低コストで半導体装置を製造することができる。
(特徴5)特徴3又は4の製造方法はさらに、半導体層の第1範囲上に存在するソース層の少なくとも一部をエッチングしてベース層を露出させる工程、及び露出したベース層に接するソース電極を形成する工程をさらに備えていてもよい。
(特徴6)本明細書で開示される半導体装置の製造方法の一例は、半導体層の第1範囲上に存在するソース層及びベース層の少なくとも一部を貫通して半導体層に接する第3トレンチを形成する工程、及び第3トレンチ内に絶縁トレンチゲートを形成する工程をさらに備えていてもよい。
(特徴7)特徴6の製造方法において、第3トレンチを形成する工程では、深さ方向に伸びるソース層が第3トレンチの側面に残存するように、第3トレンチを形成してもよい。この製造方法によれば、絶縁トレンチゲートの側面に沿って深い位置までソース層が形成されるので、絶縁トレンチゲートを形成するときのトレンチゲート電極のエッチング量のばらつきの影響が抑制される。
(特徴8)特徴6の製造方法において、第3トレンチを形成する工程では、深さ方向に伸びるソース層が第3トレンチの側面に残存しないように、第3トレンチを形成してもよい。この製造方法によれば、絶縁トレンチゲートの側面に沿って深い位置までベース層が形成されるので、ラッチアップが抑制される。
(特徴9)特徴6〜8のいずれかの製造方法はさらに、半導体層の第2範囲上に存在するソース層の少なくとも一部をエッチングしてベース層を露出させる工程、及び露出したベース層に接するソース電極を形成する工程を備えていてもよい。
(特徴10)本明細書で開示される半導体装置の製造方法の一例は、ソース層の表面から所定厚みをエッチングし、半導体層の第1範囲上にソース層及びベース層を選択的に残存させる工程、及び半導体層の第1範囲上に残存するベース層に対向する絶縁プレーナーゲートを形成する工程をさらに備えていてもよい。この製造方法によれば、プレーナー型の半導体装置を製造することができる。
次に、第1実施例のMOSFETの製造方法の変形例を説明する。図8に示されるように、n+型の基板10とn型のドリフト層11が積層した半導体層を用意した後に、ドリフト層11の第1範囲1Aに第1トレンチ121を形成する。第1トレンチ121は、ドリフト層11の表面から所定深さを有する。
次に、第2実施例のMOSFETの製造方法の変形例を説明する。図21に示されるように、エッチング技術を利用して、ドリフト層11の第1範囲1A上に存在するベース層12及びソース層13の一部を貫通してドリフト層11に達する第3トレンチ123を形成する。第3トレンチ123は、その側面に深さ方向に伸びるソース層13が残存しないように形成される。換言すれば、第3トレンチ123は、第1トレンチ21内に形成されているソース層13の底面が残存しないように形成される。
2A:第2範囲
10:基板
11:ドリフト層
12,112:ベース層
13,113:ソース層
21,121:第1トレンチ
22,122:第2トレンチ
23,123:第3トレンチ
30,130,230,330:絶縁トレンチゲート
31,131,231,331:トレンチゲート電極
32,132,232,332:ゲート絶縁膜
33,133,233,333:ソース電極
40:マスク層
Claims (10)
- 半導体装置の製造方法であって、
第1範囲と第2範囲を含む表面を有する半導体層の前記第1範囲に第1トレンチを形成する工程と、
前記第1トレンチを形成した後に、前記半導体層の前記表面に第1導電型のベース層を結晶成長させる工程と、
前記ベース層の表面に第2導電型のソース層を結晶成長させる工程と、を備えており、
前記半導体層、前記ベース層、及び前記ソース層の材料がワイドギャップ半導体である半導体装置の製造方法。 - 前記半導体層の前記第2範囲上に存在する前記ソース層及び前記ベース層の少なくとも一部を貫通して前記半導体層に接する第2トレンチを形成する工程と、
前記第2トレンチ内に絶縁トレンチゲートを形成する工程と、をさらに備える請求項1に記載の半導体装置の製造方法。 - 前記第2トレンチを形成するのに先立って、前記ソース層の表面にマスク層を形成する工程と、
前記マスク層の表面から所定厚みをエッチングし、前記半導体層の前記第1範囲上に前記マスク層を選択的に残存させる工程と、をさらに備えており、
前記第2トレンチを形成する工程では、前記マスク層をマスクとして前記第2トレンチを形成する請求項2に記載の半導体装置の製造方法。 - 前記半導体層の前記第1範囲上に存在する前記ソース層の少なくとも一部をエッチングして前記ベース層を露出させる工程と、
露出した前記ベース層に接するソース電極を形成する工程と、をさらに備える請求項2又は3に記載の半導体装置の製造方法。 - 前記半導体層の前記第1範囲上に存在する前記ソース層及び前記ベース層の少なくとも一部を貫通して前記半導体層に接する第3トレンチを形成する工程と、
前記第3トレンチ内に絶縁トレンチゲートを形成する工程と、をさらに備える請求項1に記載の半導体装置の製造方法。 - 前記第3トレンチを形成する工程では、深さ方向に伸びる前記ソース層が前記第3トレンチの側面に残存するように、前記第3トレンチを形成する請求項5に記載の半導体装置の製造方法。
- 前記第3トレンチを形成する工程では、深さ方向に伸びる前記ソース層が前記第3トレンチの側面に残存しないように、前記第3トレンチを形成する請求項5に記載の半導体装置の製造方法。
- 前記半導体層の前記第2範囲上に存在する前記ソース層の少なくとも一部をエッチングして前記ベース層を露出させる工程と、
露出した前記ベース層に接するソース電極を形成する工程と、をさらに備える請求項5〜7のいずれか一項に記載の半導体装置の製造方法。 - 前記ソース層の表面から所定厚みをエッチングし、前記半導体層の前記第1範囲上に前記ソース層及び前記ベース層を選択的に残存させる工程と、
前記半導体層の前記第1範囲上に残存する前記ベース層に対向する絶縁プレーナーゲートを形成する工程と、をさらに備える請求項1に記載の半導体装置の製造方法。 - 前記ワイドギャップ半導体は、炭化珪素である請求項1〜9のいずれか一項に記載の半導体装置の製造方法。
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