JP5744545B2 - 固体撮像装置およびカメラ - Google Patents

固体撮像装置およびカメラ Download PDF

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Publication number
JP5744545B2
JP5744545B2 JP2011019145A JP2011019145A JP5744545B2 JP 5744545 B2 JP5744545 B2 JP 5744545B2 JP 2011019145 A JP2011019145 A JP 2011019145A JP 2011019145 A JP2011019145 A JP 2011019145A JP 5744545 B2 JP5744545 B2 JP 5744545B2
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JP
Japan
Prior art keywords
insulator
imaging device
solid
state imaging
semiconductor region
Prior art date
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Expired - Fee Related
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JP2011019145A
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English (en)
Japanese (ja)
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JP2012160906A (ja
JP2012160906A5 (enExample
Inventor
和樹 大下内
和樹 大下内
雄一郎 山下
雄一郎 山下
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011019145A priority Critical patent/JP5744545B2/ja
Priority to US13/353,620 priority patent/US9117718B2/en
Priority to CN201210019881.2A priority patent/CN102625053B/zh
Publication of JP2012160906A publication Critical patent/JP2012160906A/ja
Publication of JP2012160906A5 publication Critical patent/JP2012160906A5/ja
Application granted granted Critical
Publication of JP5744545B2 publication Critical patent/JP5744545B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
JP2011019145A 2011-01-31 2011-01-31 固体撮像装置およびカメラ Expired - Fee Related JP5744545B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011019145A JP5744545B2 (ja) 2011-01-31 2011-01-31 固体撮像装置およびカメラ
US13/353,620 US9117718B2 (en) 2011-01-31 2012-01-19 Solid-state image sensor with a plurality of pixels for focus detection
CN201210019881.2A CN102625053B (zh) 2011-01-31 2012-01-21 固态图像传感器和照相机

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011019145A JP5744545B2 (ja) 2011-01-31 2011-01-31 固体撮像装置およびカメラ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015094437A Division JP5974136B2 (ja) 2015-05-01 2015-05-01 固体撮像装置およびカメラ

Publications (3)

Publication Number Publication Date
JP2012160906A JP2012160906A (ja) 2012-08-23
JP2012160906A5 JP2012160906A5 (enExample) 2014-03-20
JP5744545B2 true JP5744545B2 (ja) 2015-07-08

Family

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Family Applications (1)

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JP2011019145A Expired - Fee Related JP5744545B2 (ja) 2011-01-31 2011-01-31 固体撮像装置およびカメラ

Country Status (3)

Country Link
US (1) US9117718B2 (enExample)
JP (1) JP5744545B2 (enExample)
CN (1) CN102625053B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5864990B2 (ja) 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ
JP6023437B2 (ja) 2012-02-29 2016-11-09 キヤノン株式会社 固体撮像装置及びカメラ
JP6264616B2 (ja) * 2013-01-30 2018-01-24 パナソニックＩｐマネジメント株式会社 撮像装置及び固体撮像装置
JP6222949B2 (ja) * 2013-03-15 2017-11-01 キヤノン株式会社 撮像素子および撮像装置
JP6216147B2 (ja) 2013-04-24 2017-10-18 キヤノン株式会社 固体撮像装置およびカメラ
US20140375852A1 (en) * 2013-06-20 2014-12-25 Canon Kabushiki Kaisha Solid-state imaging apparatus, method of manufacturing the same, camera, imaging device, and imaging apparatus
JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
JP6294648B2 (ja) 2013-12-06 2018-03-14 キヤノン株式会社 固体撮像装置及びカメラ
WO2015128908A1 (ja) 2014-02-26 2015-09-03 パナソニックＩｐマネジメント株式会社 深さ位置検出装置、撮像素子、及び深さ位置検出方法
JP6385126B2 (ja) 2014-05-02 2018-09-05 キヤノン株式会社 固体撮像装置
JP2016001682A (ja) 2014-06-12 2016-01-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6609113B2 (ja) * 2014-06-18 2019-11-20 キヤノン株式会社 撮像装置及びその制御方法
KR102306670B1 (ko) 2014-08-29 2021-09-29 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP6415187B2 (ja) 2014-08-29 2018-10-31 キヤノン株式会社 固体撮像装置および撮像システム
CN115190256A (zh) * 2014-12-18 2022-10-14 索尼公司 固体摄像器件和电子装置
KR102363433B1 (ko) 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
KR20160100569A (ko) * 2015-02-16 2016-08-24 삼성전자주식회사 이미지 센서 및 이미지 센서를 포함하는 촬상 장치
EP3098638B1 (en) * 2015-05-29 2022-05-11 Phase One A/S Adaptive autofocusing system
US10263025B2 (en) * 2015-06-05 2019-04-16 Sony Corporation Solid-state imaging sensor
US10044959B2 (en) * 2015-09-24 2018-08-07 Qualcomm Incorporated Mask-less phase detection autofocus
KR102390836B1 (ko) 2015-10-05 2022-04-26 삼성전자주식회사 이미지 데이터를 생성하는 전자 장치 및 방법
JP2017142356A (ja) * 2016-02-10 2017-08-17 ソニー株式会社 撮像装置、および、撮像装置の制御方法
CN107040724B (zh) * 2017-04-28 2020-05-15 Oppo广东移动通信有限公司 双核对焦图像传感器及其对焦控制方法和成像装置
KR102614851B1 (ko) * 2018-07-23 2023-12-19 삼성전자주식회사 이미지 센서
KR20220043556A (ko) 2020-09-29 2022-04-05 에스케이하이닉스 주식회사 이미지 센싱 장치
EP4195683A1 (en) 2021-12-07 2023-06-14 Canon Kabushiki Kaisha Photoelectric conversion device
JP2023084272A (ja) 2021-12-07 2023-06-19 キヤノン株式会社 光電変換装置
US12284836B2 (en) * 2022-05-20 2025-04-22 Visera Technologies Company Ltd. Image sensor wherein focus of lens of an optical component misaligned a center of a photodiode

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833941B2 (ja) * 1992-10-09 1998-12-09 三菱電機株式会社 固体撮像装置とその製造方法
JPH1187673A (ja) * 1997-09-11 1999-03-30 Sony Corp 固体撮像素子
JP3571909B2 (ja) * 1998-03-19 2004-09-29 キヤノン株式会社 固体撮像装置及びその製造方法
US6819360B1 (en) * 1999-04-01 2004-11-16 Olympus Corporation Image pickup element and apparatus for focusing
JP2001250931A (ja) 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP4500434B2 (ja) * 2000-11-28 2010-07-14 キヤノン株式会社 撮像装置及び撮像システム、並びに撮像方法
JP2002270811A (ja) * 2001-03-09 2002-09-20 Sony Corp 固体撮像素子と、その駆動方法と、その製造方法
JP2003241075A (ja) * 2002-02-22 2003-08-27 Canon Inc カメラシステム、カメラおよび撮影レンズ装置
JP2004191893A (ja) * 2002-12-13 2004-07-08 Canon Inc 撮像装置
JP2004253573A (ja) * 2003-02-19 2004-09-09 Sharp Corp 半導体装置およびその製造方法
US20060169870A1 (en) * 2005-02-01 2006-08-03 Silsby Christopher D Image sensor with embedded optical element
JP4720508B2 (ja) * 2006-01-05 2011-07-13 株式会社ニコン 撮像素子および撮像装置
US7638804B2 (en) * 2006-03-20 2009-12-29 Sony Corporation Solid-state imaging device and imaging apparatus
JP4915126B2 (ja) * 2006-04-10 2012-04-11 株式会社ニコン 固体撮像装置、および電子カメラ
JP4961993B2 (ja) * 2006-12-18 2012-06-27 株式会社ニコン 撮像素子、焦点検出装置および撮像装置
JP2009069255A (ja) * 2007-09-11 2009-04-02 Sony Corp 撮像装置および合焦制御方法
JP5164509B2 (ja) 2007-10-03 2013-03-21 キヤノン株式会社 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
JP2009224361A (ja) * 2008-03-13 2009-10-01 Panasonic Corp 固体撮像装置及びその製造方法
US7729055B2 (en) * 2008-03-20 2010-06-01 Aptina Imaging Corporation Method and apparatus providing concave microlenses for semiconductor imaging devices
JP5213501B2 (ja) 2008-04-09 2013-06-19 キヤノン株式会社 固体撮像装置
JP5086877B2 (ja) * 2008-04-11 2012-11-28 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
JP5328224B2 (ja) 2008-05-01 2013-10-30 キヤノン株式会社 固体撮像装置
JP5371330B2 (ja) 2008-08-29 2013-12-18 キヤノン株式会社 固体撮像装置
JP5428400B2 (ja) 2009-03-04 2014-02-26 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2010252277A (ja) * 2009-04-20 2010-11-04 Panasonic Corp 固体撮像装置及び電子カメラ
JP5232118B2 (ja) * 2009-09-30 2013-07-10 富士フイルム株式会社 撮像デバイスおよび電子カメラ
JP4881987B2 (ja) 2009-10-06 2012-02-22 キヤノン株式会社 固体撮像装置および撮像装置
JP5290923B2 (ja) 2009-10-06 2013-09-18 キヤノン株式会社 固体撮像装置および撮像装置
JP5780711B2 (ja) 2010-04-06 2015-09-16 キヤノン株式会社 固体撮像装置
JP2012034350A (ja) 2010-07-07 2012-02-16 Canon Inc 固体撮像装置及び撮像システム
JP5645513B2 (ja) 2010-07-07 2014-12-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
JP5956782B2 (ja) * 2011-05-26 2016-07-27 キヤノン株式会社 撮像素子及び撮像装置

Also Published As

Publication number Publication date
CN102625053B (zh) 2015-11-18
US20120194696A1 (en) 2012-08-02
JP2012160906A (ja) 2012-08-23
CN102625053A (zh) 2012-08-01
US9117718B2 (en) 2015-08-25

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