CN102625053B - 固态图像传感器和照相机 - Google Patents

固态图像传感器和照相机 Download PDF

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Publication number
CN102625053B
CN102625053B CN201210019881.2A CN201210019881A CN102625053B CN 102625053 B CN102625053 B CN 102625053B CN 201210019881 A CN201210019881 A CN 201210019881A CN 102625053 B CN102625053 B CN 102625053B
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CN
China
Prior art keywords
insulator
semiconductor region
microlens
lens surface
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201210019881.2A
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English (en)
Chinese (zh)
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CN102625053A (zh
Inventor
大下内和树
山下雄一郎
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Canon Inc
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Canon Inc
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Publication of CN102625053A publication Critical patent/CN102625053A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
CN201210019881.2A 2011-01-31 2012-01-21 固态图像传感器和照相机 Expired - Fee Related CN102625053B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011019145A JP5744545B2 (ja) 2011-01-31 2011-01-31 固体撮像装置およびカメラ
JP2011-019145 2011-01-31

Publications (2)

Publication Number Publication Date
CN102625053A CN102625053A (zh) 2012-08-01
CN102625053B true CN102625053B (zh) 2015-11-18

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CN201210019881.2A Expired - Fee Related CN102625053B (zh) 2011-01-31 2012-01-21 固态图像传感器和照相机

Country Status (3)

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US (1) US9117718B2 (enExample)
JP (1) JP5744545B2 (enExample)
CN (1) CN102625053B (enExample)

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JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
JP6294648B2 (ja) 2013-12-06 2018-03-14 キヤノン株式会社 固体撮像装置及びカメラ
WO2015128908A1 (ja) 2014-02-26 2015-09-03 パナソニックＩｐマネジメント株式会社 深さ位置検出装置、撮像素子、及び深さ位置検出方法
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JP2016001682A (ja) * 2014-06-12 2016-01-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6609113B2 (ja) 2014-06-18 2019-11-20 キヤノン株式会社 撮像装置及びその制御方法
KR102306670B1 (ko) 2014-08-29 2021-09-29 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP6415187B2 (ja) 2014-08-29 2018-10-31 キヤノン株式会社 固体撮像装置および撮像システム
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KR102363433B1 (ko) 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
KR20160100569A (ko) * 2015-02-16 2016-08-24 삼성전자주식회사 이미지 센서 및 이미지 센서를 포함하는 촬상 장치
EP3098638B1 (en) * 2015-05-29 2022-05-11 Phase One A/S Adaptive autofocusing system
JP7023109B2 (ja) 2015-06-05 2022-02-21 ソニーグループ株式会社 固体撮像装置
US10044959B2 (en) * 2015-09-24 2018-08-07 Qualcomm Incorporated Mask-less phase detection autofocus
KR102390836B1 (ko) 2015-10-05 2022-04-26 삼성전자주식회사 이미지 데이터를 생성하는 전자 장치 및 방법
JP2017142356A (ja) * 2016-02-10 2017-08-17 ソニー株式会社 撮像装置、および、撮像装置の制御方法
CN107040724B (zh) 2017-04-28 2020-05-15 Oppo广东移动通信有限公司 双核对焦图像传感器及其对焦控制方法和成像装置
KR102614851B1 (ko) * 2018-07-23 2023-12-19 삼성전자주식회사 이미지 센서
KR20220043556A (ko) * 2020-09-29 2022-04-05 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2023084272A (ja) 2021-12-07 2023-06-19 キヤノン株式会社 光電変換装置
EP4195683A1 (en) 2021-12-07 2023-06-14 Canon Kabushiki Kaisha Photoelectric conversion device
US12284836B2 (en) * 2022-05-20 2025-04-22 Visera Technologies Company Ltd. Image sensor wherein focus of lens of an optical component misaligned a center of a photodiode

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CN101826542A (zh) * 2009-03-04 2010-09-08 索尼公司 固态摄像器件及其制造方法和电子设备

Also Published As

Publication number Publication date
US20120194696A1 (en) 2012-08-02
US9117718B2 (en) 2015-08-25
JP2012160906A (ja) 2012-08-23
CN102625053A (zh) 2012-08-01
JP5744545B2 (ja) 2015-07-08

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