JP5740167B2 - 半導体装置及び電子機器 - Google Patents

半導体装置及び電子機器 Download PDF

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Publication number
JP5740167B2
JP5740167B2 JP2011020322A JP2011020322A JP5740167B2 JP 5740167 B2 JP5740167 B2 JP 5740167B2 JP 2011020322 A JP2011020322 A JP 2011020322A JP 2011020322 A JP2011020322 A JP 2011020322A JP 5740167 B2 JP5740167 B2 JP 5740167B2
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transistor
conductive layer
layer
oxide semiconductor
semiconductor device
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JP2011181912A5 (enExample
JP2011181912A (ja
Inventor
山崎　舜平
舜平 山崎
宏充 郷戸
宏充 郷戸
須沢　英臣
英臣 須沢
慎也 笹川
慎也 笹川
求 倉田
求 倉田
真弓 三上
真弓 三上
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372—Particulate matter
    • Y10T428/24421—Silicon containing

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011020322A 2010-02-05 2011-02-02 半導体装置及び電子機器 Active JP5740167B2 (ja)

Priority Applications (1)

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JP2011020322A JP5740167B2 (ja) 2010-02-05 2011-02-02 半導体装置及び電子機器

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Application Number Priority Date Filing Date Title
JP2010023764 2010-02-05
JP2010023764 2010-02-05
JP2011020322A JP5740167B2 (ja) 2010-02-05 2011-02-02 半導体装置及び電子機器

Related Child Applications (1)

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JP2015090048A Division JP2015159319A (ja) 2010-02-05 2015-04-27 半導体装置

Publications (3)

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JP2011181912A JP2011181912A (ja) 2011-09-15
JP2011181912A5 JP2011181912A5 (enExample) 2014-03-13
JP5740167B2 true JP5740167B2 (ja) 2015-06-24

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JP2015090048A Withdrawn JP2015159319A (ja) 2010-02-05 2015-04-27 半導体装置
JP2017086008A Expired - Fee Related JP6433533B2 (ja) 2010-02-05 2017-04-25 半導体装置
JP2018208917A Expired - Fee Related JP6663969B2 (ja) 2010-02-05 2018-11-06 半導体装置
JP2020024135A Active JP6910489B2 (ja) 2010-02-05 2020-02-17 半導体装置

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JP2015090048A Withdrawn JP2015159319A (ja) 2010-02-05 2015-04-27 半導体装置
JP2017086008A Expired - Fee Related JP6433533B2 (ja) 2010-02-05 2017-04-25 半導体装置
JP2018208917A Expired - Fee Related JP6663969B2 (ja) 2010-02-05 2018-11-06 半導体装置
JP2020024135A Active JP6910489B2 (ja) 2010-02-05 2020-02-17 半導体装置

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US (1) US8436403B2 (enExample)
JP (5) JP5740167B2 (enExample)
TW (1) TWI512980B (enExample)
WO (1) WO2011096455A1 (enExample)

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