JP5739767B2 - 誘電体分離基板および半導体装置 - Google Patents
誘電体分離基板および半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 171
- 239000000758 substrate Substances 0.000 title claims description 83
- 238000000926 separation method Methods 0.000 title description 21
- 239000012535 impurity Substances 0.000 claims description 183
- 238000009792 diffusion process Methods 0.000 claims description 133
- 238000002955 isolation Methods 0.000 description 59
- 238000010586 diagram Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- Y10S257/91—Diode arrays, e.g. diode read-only memory array
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- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Description
(付記1) 前記半導体層の上面側から前記第2不純物拡散層を貫通して前記第3不純物拡散層に到る素子分離層を有する請求項5に記載の半導体装置。
前記半導体層と前記第4不純物拡散層の間の前記第2不純物拡散層を跨ぐようにゲート絶縁膜を介して設けられたゲート電極と、
を具備する請求項5に記載の半導体装置。
11 支持基板
12 絶縁膜
13 半導体層
14、31、32、33、52、61 不純物拡散層
15 開口
16 ユニット
17 オリエンテーションフラット
18、19 ダイシングライン
21 半導体基板
22、40、42、75 マスク材
23、41、43 不純物注入層
24、25 熱酸化膜
30、45、50、60、90、94、97 半導体装置
34 保護膜
35 アノードメタル
36 カソードメタル
51 ベース層
53 バッファ層
54 ゲート電極
65 モータドライブ回路
66 ブラシレスモータ
67 電流制御手段
68 インバータ回路
71、81、91 素子分離層
76 トレンチ
77 シリコン酸化膜
82 結晶欠陥
Claims (6)
- 半導体基板に第1の厚さを有する絶縁膜を介して設けられ、第2の厚さおよび第1不純物濃度を有する第1導電型の半導体層と、
前記半導体層の上部に設けられ、前記第1不純物濃度より高い第2不純物濃度を有する第1導電型の第1不純物拡散層と、
前記第1不純物拡散層に接続された第1電極と、
前記第1不純物拡散層を囲むように前記第1半導体層の上部に設けられ、第3不純物濃度を有する第2導電型の第2不純物拡散層と、
前記第2不純物拡散層の上部に接続された第2電極と、
前記絶縁膜に接するとともに前記第2不純物拡散層の下部に重なるように前記第1半導体層の下部に設けられ、前記第3不純物濃度以上の濃度である第4不純物濃度を有する第2導電型の第3不純物拡散層と、
を具備することを特徴とする半導体装置。 - 前記第4不純物濃度が、前記第3不純物濃度より大きいことを特徴とする請求項1に記載の半導体装置。
- 前記第2の厚さが、前記第1の厚さより大きいことを特徴とする請求項1に記載の半導体装置。
- 前記第2不純物拡散層中の不純物は前記第3不純物拡散層の方向に拡散して分布し、前記第3不純物拡散層中の不純物は前記第2不純物拡散層の方向に拡散して分布していることを特徴とする請求項1に記載の半導体装置。
- 前記第2不純物拡散層の上部に設けられ、前記第2電極に接続された第1導電型の第4不純物拡散層と、
前記半導体層と前記第4不純物拡散層の間の前記第2不純物拡散層上にゲート絶縁膜を介して設けられたゲート電極と、
を具備することを特徴とする請求項1に記載の半導体装置。 - 半導体基板に第1の厚さを有する絶縁膜を介して設けられ、第2の厚さおよび第1不純物濃度を有する第1導電型の半導体層と、
前記半導体層の上部に設けられた第2導電型の第1不純物拡散層と、
前記第1不純物拡散層に接続された第1電極と、
前記第1不純物拡散層を囲むように前記第1半導体層の上部に設けられ、第3不純物濃度を有する第2導電型の第2不純物拡散層と、
前記第2不純物拡散層の上部に接続された第2電極と、
前記絶縁膜に接するとともに前記第2不純物拡散層の下部に重なるように前記第1半導体層の下部に設けられ、前記第3不純物濃度以上の濃度である第4不純物濃度を有する第2導電型の第3不純物拡散層と、
前記第2不純物拡散層の上部に設けられ、前記第2電極に接続された第1導電型の第4不純物拡散層と、
前記半導体層と前記第4不純物拡散層の間の前記第2不純物拡散層上にゲート絶縁膜を介して設けられたゲート電極と、
を具備することを特徴とする半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2011181489A JP5739767B2 (ja) | 2011-08-23 | 2011-08-23 | 誘電体分離基板および半導体装置 |
US13/410,739 US8981473B2 (en) | 2011-08-23 | 2012-03-02 | Dielectric isolation substrate and semiconductor device |
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JP2011181489A JP5739767B2 (ja) | 2011-08-23 | 2011-08-23 | 誘電体分離基板および半導体装置 |
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Publication Number | Publication Date |
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JP2013045833A JP2013045833A (ja) | 2013-03-04 |
JP5739767B2 true JP5739767B2 (ja) | 2015-06-24 |
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JP2011181489A Expired - Fee Related JP5739767B2 (ja) | 2011-08-23 | 2011-08-23 | 誘電体分離基板および半導体装置 |
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US (1) | US8981473B2 (ja) |
JP (1) | JP5739767B2 (ja) |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2878689B2 (ja) * | 1988-07-04 | 1999-04-05 | 株式会社東芝 | 高耐圧半導体素子 |
JPH04103146A (ja) * | 1990-08-23 | 1992-04-06 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JPH04144113A (ja) | 1990-10-05 | 1992-05-18 | Fujitsu Ltd | シリコンオンインシュレータ基板の製造方法 |
JP3293871B2 (ja) * | 1991-01-31 | 2002-06-17 | 株式会社東芝 | 高耐圧半導体素子 |
JPH0574667A (ja) * | 1991-09-18 | 1993-03-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH05152516A (ja) * | 1991-11-29 | 1993-06-18 | Toshiba Corp | 半導体装置とその製造方法 |
JP3190144B2 (ja) * | 1992-11-19 | 2001-07-23 | 株式会社東芝 | 半導体集積回路の製造方法 |
JPH06338604A (ja) | 1993-05-31 | 1994-12-06 | Toshiba Corp | 半導体基板の製造方法 |
JP3217552B2 (ja) | 1993-08-16 | 2001-10-09 | 株式会社東芝 | 横型高耐圧半導体素子 |
EP1179853A1 (en) | 1994-09-16 | 2002-02-13 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
JP4157184B2 (ja) * | 1998-02-18 | 2008-09-24 | 株式会社東芝 | 高耐圧半導体素子 |
EP1187220A3 (en) | 2000-09-11 | 2007-10-10 | Kabushiki Kaisha Toshiba | MOS field effect transistor with reduced on-resistance |
JP4204895B2 (ja) * | 2003-05-12 | 2009-01-07 | 三菱電機株式会社 | 半導体装置 |
JP4974474B2 (ja) * | 2004-06-22 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4857590B2 (ja) * | 2005-04-19 | 2012-01-18 | サンケン電気株式会社 | 半導体素子 |
JP5434961B2 (ja) * | 2010-08-04 | 2014-03-05 | 株式会社デンソー | 横型ダイオードを有する半導体装置 |
-
2011
- 2011-08-23 JP JP2011181489A patent/JP5739767B2/ja not_active Expired - Fee Related
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2012
- 2012-03-02 US US13/410,739 patent/US8981473B2/en not_active Expired - Fee Related
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Publication number | Publication date |
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US20130049111A1 (en) | 2013-02-28 |
JP2013045833A (ja) | 2013-03-04 |
US8981473B2 (en) | 2015-03-17 |
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