JP5732448B2 - 冷却配置を有するディテクタモジュール、および該ディテクタモジュールを含むリソグラフィ装置 - Google Patents
冷却配置を有するディテクタモジュール、および該ディテクタモジュールを含むリソグラフィ装置Info
- Publication number
- JP5732448B2 JP5732448B2 JP2012503932A JP2012503932A JP5732448B2 JP 5732448 B2 JP5732448 B2 JP 5732448B2 JP 2012503932 A JP2012503932 A JP 2012503932A JP 2012503932 A JP2012503932 A JP 2012503932A JP 5732448 B2 JP5732448 B2 JP 5732448B2
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- detector module
- detector
- housing
- cooling arrangement
- heat sink
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本願は、2009年4月13日に出願された米国仮出願第61/168,712号の優先権を主張し、その全体を、参照することにより本明細書に組み込むものとする。
Claims (16)
- 第1底部と、前記第1底部から第2本体に向かって延びる第1側部と、を有する第1本体と、
第2底部と、前記第2底部から前記第1本体に向かって延びる第2側部と、を有する前記第2本体であって、前記第1側部は前記第2側部に熱的に結合され、前記第1側部及び前記第2側部はハウジングの側部を画定する、前記第2本体と、
光子放射を感知するための少なくとも1つのディテクタと、
前記少なくとも1つのディテクタに結合され、前記第1底部又は前記第2底部から前記ハウジング内に延びる壁と前記ハウジングの側部との間で前記ハウジング内に配置された電子回路と、を備える、ディテクタモジュール。 - 前記第1側部は、前記第1側部の外表面と前記第2側部の内表面との間に配置された接着層によって、前記第2側部に熱的に結合される、請求項1に記載のディテクタモジュール。
- 前記第1側部は、前記第1側部が前記第2側部内に固定されることによって、前記第2側部に熱的に結合される、請求項1に記載のディテクタモジュール。
- 前記ハウジングはセラミック材料を含む、請求項1〜3のいずれか1項に記載のディテクタモジュール。
- 前記セラミック材料はSiCを含む、請求項4に記載のディテクタモジュール。
- 前記第1底部又は前記第2底部の外表面が、基板上に形成された格子を担持し、前記格子は、前記第1底部又は前記第2底部における開口部の上方に配置され、前記ディテクタは、前記格子に向き合って前記ハウジング内に配置される、請求項1〜5のいずれか1項に記載のディテクタモジュール。
- 前記第1底部又は前記第2底部の外表面が前記ディテクタを担持する、請求項1〜5のいずれか1項に記載のディテクタモジュール。
- 前記第1底部又は前記第2底部はヒートシンクに向き合って配置される、請求項1〜7のいずれか1項に記載のディテクタモジュール。
- 第1熱接触面を有するヒートシンクと、
第1底部と、前記第1底部から第2本体に向かって延びる第1側部と、を有する第1本体と、
第2底部と、前記第2底部から前記第1本体に向かって延びる第2側部と、を有する前記第2本体であって、前記第1側部は前記第2側部に熱的に結合され、前記第1側部及び前記第2側部はハウジングの側部を画定し、前記第1底部又は前記第2底部は、第2熱接触面を有しており、前記ヒートシンクに向き合って配置され、前記第1熱接触面及び前記第2熱接触面は互いに面して間隙を画定する、前記第2本体と、
光子放射を感知するための少なくとも1つのディテクタと、
前記少なくとも1つのディテクタに結合されて、前記ハウジング内に配置された電子回路と、
前記間隙を少なくとも含む空間を囲む囲いの一部である弾性壁と、を備える冷却配置であって、
前記冷却配置は、前記空間と前記冷却配置の環境との間に圧力差を維持する機構を備える、冷却配置。 - 前記空間内にガスを与える機構を備える、請求項9に記載の冷却配置。
- 前記弾性壁はベローズである、請求項10に記載の冷却配置。
- 前記弾性壁は前記ヒートシンクを囲む、請求項9〜11のいずれか1項に記載の冷却配置。
- 前記弾性壁は、前記第1底部又は前記第2底部と前記ヒートシンクとのいずれか一方に取り付けられた第1端部と、前記弾性壁の張力によって、前記第1底部又は前記第2底部と前記ヒートシンクとのいずれか他方に押し付けられる封止リングを備えた第2端部と、を有する、請求項9〜12のいずれか1項に記載の冷却配置。
- 前記封止リングには開口部が設けられている、請求項13に記載の冷却配置。
- EUV放射源と、
真空チャンバと、を含み、
前記真空チャンバ内には、
前記EUV放射源からの電磁放射をオブジェクト面に誘導して前記オブジェクト面を照明する結像システムと、
前記オブジェクト面内に位置決めされた第1格子と、
前記第1格子の像を焦点面上に投影する投影光学システムと、
投影された前記像を受ける、請求項1に記載の前記ディテクタモジュールと、が配置される、リソグラフィシステム。 - 前記ディテクタモジュールの前記第1本体の前記第1底部は前記投影光学システムに面する、請求項15に記載のリソグラフィシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16871209P | 2009-04-13 | 2009-04-13 | |
US61/168,712 | 2009-04-13 | ||
PCT/EP2010/051901 WO2010118902A1 (en) | 2009-04-13 | 2010-02-16 | Detector module with a cooling arrangement, and lithographic apparatus comprising said detector module |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012523683A JP2012523683A (ja) | 2012-10-04 |
JP2012523683A5 JP2012523683A5 (ja) | 2013-04-04 |
JP5732448B2 true JP5732448B2 (ja) | 2015-06-10 |
Family
ID=42102124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012503932A Active JP5732448B2 (ja) | 2009-04-13 | 2010-02-16 | 冷却配置を有するディテクタモジュール、および該ディテクタモジュールを含むリソグラフィ装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9081309B2 (ja) |
JP (1) | JP5732448B2 (ja) |
KR (1) | KR101689209B1 (ja) |
CN (1) | CN102388344B (ja) |
NL (1) | NL2004242A (ja) |
TW (1) | TWI421483B (ja) |
WO (1) | WO2010118902A1 (ja) |
Families Citing this family (13)
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CN111699438B (zh) * | 2018-01-04 | 2023-08-01 | Asml荷兰有限公司 | 光学测量方法和传感器设备 |
CN110058371B (zh) * | 2019-04-08 | 2021-05-11 | 武汉光迅科技股份有限公司 | 一种光模块 |
CN112394620B (zh) * | 2019-08-16 | 2022-04-01 | 上海微电子装备(集团)股份有限公司 | 测量装置和光刻机 |
EP3829281A1 (en) * | 2019-11-27 | 2021-06-02 | Nabtesco Corporation | Electronic device for aircraft |
CN110967944A (zh) * | 2019-11-29 | 2020-04-07 | 中国科学院微电子研究所 | 用于euv真空环境中的光电转换电子学装置及光刻机 |
CN112161751A (zh) * | 2020-09-15 | 2021-01-01 | 合肥芯碁微电子装备股份有限公司 | 直写式光刻机及漏水检测方法 |
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- 2010-02-16 JP JP2012503932A patent/JP5732448B2/ja active Active
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US20120075607A1 (en) | 2012-03-29 |
KR20120022945A (ko) | 2012-03-12 |
JP2012523683A (ja) | 2012-10-04 |
KR101689209B1 (ko) | 2017-01-02 |
WO2010118902A1 (en) | 2010-10-21 |
TWI421483B (zh) | 2014-01-01 |
US9081309B2 (en) | 2015-07-14 |
CN102388344B (zh) | 2014-05-14 |
TW201104233A (en) | 2011-02-01 |
NL2004242A (en) | 2010-10-14 |
CN102388344A (zh) | 2012-03-21 |
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