JP5731899B2 - 半導体膜の作製方法、及び半導体装置の作製方法 - Google Patents

半導体膜の作製方法、及び半導体装置の作製方法 Download PDF

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JP5731899B2
JP5731899B2 JP2011109717A JP2011109717A JP5731899B2 JP 5731899 B2 JP5731899 B2 JP 5731899B2 JP 2011109717 A JP2011109717 A JP 2011109717A JP 2011109717 A JP2011109717 A JP 2011109717A JP 5731899 B2 JP5731899 B2 JP 5731899B2
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layer
oxide semiconductor
light
semiconductor layer
light transmission
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Japanese (ja)
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JP2012004550A (ja
JP2012004550A5 (enExample
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太一 遠藤
太一 遠藤
豊 米満
豊 米満
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2011109717A 2010-05-20 2011-05-16 半導体膜の作製方法、及び半導体装置の作製方法 Expired - Fee Related JP5731899B2 (ja)

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JP2011109717A JP5731899B2 (ja) 2010-05-20 2011-05-16 半導体膜の作製方法、及び半導体装置の作製方法

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JP2010116128 2010-05-20
JP2010116128 2010-05-20
JP2011109717A JP5731899B2 (ja) 2010-05-20 2011-05-16 半導体膜の作製方法、及び半導体装置の作製方法

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JP2012004550A JP2012004550A (ja) 2012-01-05
JP2012004550A5 JP2012004550A5 (enExample) 2014-06-26
JP5731899B2 true JP5731899B2 (ja) 2015-06-10

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US (1) US20110287593A1 (enExample)
JP (1) JP5731899B2 (enExample)

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CN113345919B (zh) * 2021-05-25 2023-07-04 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
US12408380B2 (en) 2021-05-25 2025-09-02 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel including light-absorbing layer

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US20110287593A1 (en) 2011-11-24

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