CN104900711B - 薄膜晶体管及其制作方法以及阵列基板、显示装置 - Google Patents
薄膜晶体管及其制作方法以及阵列基板、显示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000009413 insulation Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 18
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 230000003116 impacting effect Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- -1 InZnO (IZO) Inorganic materials 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910005555 GaZnO Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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Abstract
本发明涉及一种薄膜晶体管及其制作方法以及阵列基板、显示装置所述薄膜晶体管包括:有源层;设置在所述有源层之上和/或设置在所述有源层之下的光保护层,所述光保护层用于吸收波长小于预设波长的光波。根据本发明的技术方案,通过在有源层上方设置光保护层,能够吸收从薄膜晶体管上方射入沟道区的光线,通过在有源层下方设置光保护层,能够吸收从薄膜晶体管下方射入沟道区的光线,从而有效避免光线对沟道区的有源层造成影响,保证薄膜晶体管中的驱动晶体管具有较强的光稳定性。
Description
技术领域
本发明涉及显示技术领域,具体涉及一种薄膜晶体管、一种薄膜晶体管制作方法、一种阵列基板和一种显示装置。
背景技术
目前研究较多的氧化物半导体材料包括IGZO(铟镓锌氧化物)、ITZO(铟锡锌氧化物)等,在这些氧化物材料中存在大量的氧空位缺陷态,氧空位缺陷态中包含两个电子,当晶体管(TFT)中的这些氧化物受到光照射时,氧空位中在电子受到激发跃迁到氧化物材料的导带附近;当去掉光照后,由氧空位引起的光生电子恢复到基态的速度较慢,从而导致TFT的漏电流较大,TFT光稳定性较差。
目前,业界多采用遮光有机材料,如resin,BM,CF等材料对氧化物TFT(主要是有源层部分)进行遮光处理,降低照射到TFT上的光强度,从而减少光照对TFT特性的影响。如图1所述,利用resin材料制作遮光层遮挡TFT,降低照射到TFT上的光强,可有效改善光照对氧化物TFT特性的影响。
但是,上述有机材料遮挡TFT的方法仅适用于光源从TFT顶部照射的情况,当TFT为底栅或顶栅结构,而光从TFT底部入射,即光源透过基板入射到TFT上,如图2和图3所示,上述有机材料遮挡TFT的方法不再适用,光线仍会照射到沟道区的有源层导致TFT产生较大的漏电流。
发明内容
本发明所要解决的技术问题是,如何有效降低照射到有源层上的光强,从而保证晶体管具有较强的光稳定性。
为此目的,本发明提出了一种薄膜晶体管,包括:
有源层;
设置在所述有源层之上和/或设置在所述有源层之下的光保护层,
其中,所述光保护层用于吸收波长小于预设波长的光波。
优选地,还包括:
基底;
设置在所述基底之上的栅极;
设置在所述栅极之上的栅绝缘层;
设置在所述栅绝缘层之上,且与所述有源层相接触的源极和漏极,
其中,所述有源层设置在所述栅绝缘层之上。
优选地,还包括:
基底;
设置在所述基底之上,且与所述有源层相接触的源极和漏极;
设置在所述源极和漏极之上的栅绝缘层;
设置在所述栅绝缘层之上的栅极;
其中,所述有源层设置在所述基底之上。
优选地,所述有源层和所述光保护层宽度相等。
优选地,所述光保护层的宽度大于所述有源层的宽度。
优选地,所述光保护层用于吸收波长小于539nm的光波。
优选地,所述光保护层的禁带宽度大于1.1eV且小于2.3eV,且透过率低于70%。
优选地,所述光保护层的材料为包含氟、氯、溴、硫、碳、碘、硒中的一种或多种阴离子,以及包含硼、铝、镓、铟、锡、钛、铪、硅中的一种或多种阳离子的金属氧化物。
优选地,所述光保护层的材料为锌基氮氧化物。
优选地,所述光保护层的厚度为5-100nm。
本发明还提出了一种显示装置,包括上述任一项所述的薄膜晶体管。
本发明还提出了一种薄膜晶体管制作方法,包括:
形成有源层;
在所述有源层之上和/或在所述有源层之下形成光保护层,所述光保护层用于吸收波长小于预设波长的光波。
优选地,在形成所述有源层之前还包括:
在基底之上形成栅极;
在所述栅极之上形成栅绝缘层;
在所述栅绝缘层之上形成与所述有源层相接触的源极和漏极,
则所述形成有源层包括:
在所述栅绝缘层之上形成所述有源层。
优选地,在形成所述有源层之前还包括:
在基底上形成与所述有源层相接触的源极和漏极;
在所述源极和漏极之上形成栅绝缘层;
在所述栅绝缘层之上形成栅极;
其中,所述形成有源层包括:
在所述基底上形成所述有源层。
根据上述技术方案,通过在有源层上方设置光保护层,能够吸收从薄膜晶体管上方射入沟道区的光线,通过在有源层下方设置光保护层,能够吸收从薄膜晶体管下方射入沟道区的光线,从而有效避免波长较短的光线对沟道区的有源层造成影响,保证薄膜晶体管中的驱动晶体管具有较强的光稳定性。
附图说明
通过参考附图会更加清楚的理解本发明的特征和优点,附图是示意性的而不应理解为对本发明进行任何限制,在附图中:
图1示出了现有技术中遮光层的结构示意图;
图2示出了现有技术中底栅结构示意图;
图3示出了现有技术中顶栅结构示意图;
图4示出了根据本发明一个实施例的薄膜晶体管的结构示意图;
图5示出了根据本发明又一个实施例的薄膜晶体管的结构示意图;
图6示出了根据本发明又一个实施例的薄膜晶体管的结构示意图;
图7示出了根据本发明又一个实施例的薄膜晶体管的结构示意图;
图8示出了根据本发明又一个实施例的薄膜晶体管的结构示意图;
图9示出了根据本发明又一个实施例的薄膜晶体管的结构示意图;
图10示出了根据本发明又一个实施例的锌基氮氧化物与镓铟锌氧化物的氧空位比较示意图;
图11示出了根据本发明又一个实施例的锌基氮氧化物与镓铟锌氧化物和氧化铟锌的稳定性比较示意图;
图12示出了根据本发明一个实施例的薄膜晶体管制作方法示意流程图。
附图标号说明:
1-有源层;2-光保护层;3-基底;4-栅极;5-栅绝缘层;6-源极;7-漏极。
具体实施方式
了能够更清楚地理解本发明的上述目的、特征和优点,下面结合附图和具体实施方式对本发明进行进一步的详细描述。需要说明的是,在不冲突的情况下,本申请的实施例及实施例中的特征可以相互组合。
在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是,本发明还可以采用其他不同于在此描述的其他方式来实施,因此,本发明的保护范围并不受下面公开的具体实施例的限制。
如图4所示,根据本发明一个实施例薄膜晶体管,包括:
有源层1;
设置在有源层1之上和/或设置在有源层1之下的光保护层2,
光保护层2用于吸收波长小于预设波长的光波。
影响有源层1光稳定性的主要缺陷态氧空位的能级为2.3eV,对应的光线波长为:即波长小于539nm的光都会激发氧空位从而影响有源层1乃至整个驱动晶体管的稳定性。
通过在有源层1之下和/或之上设置光保护层2,可以吸收射向有源层1的波长小于预设波长(例如539nm)的光,从而避免波长较短的光射入有源层1,避免了激发有源层1中的氧空位,保证了有源层1和整个驱动晶体管的稳定性。
优选地,还包括:
基底3;
设置在基底3之上的栅极4;
设置在栅极4之上的栅绝缘层5;
设置在栅绝缘层5之上,且与有源层1相接触的源极6和漏极7;
其中,有源层1设置在栅绝缘层5之上。
图4示出了底栅结构的驱动晶体管结构,即栅极4设置在基底上。通过在有源层1下方设置光保护层2,当存在位于基底3底部的光源,使得光从薄膜晶体管底部射入时,能够有效地吸收射入光线,从而保证有源层1的稳定。
如图5所示,还可以在有源层1上方设置光保护层2,当存在位于薄膜晶体管顶部的光源,使得光从薄膜晶体管顶部射入时,能够有效地吸收射入光线,从而保证有源层1的稳定。
如图6所示,进一步地,还可以在有源层1的上方及下方都设置光保护层,当在薄膜晶体管的顶部和底部都存在光源时,能够有效地吸收从两个方向射入的光线,从而保证有源层1的稳定。
如图7所示,优选地,还包括:
基底3;
设置在基底3之上,且与有源层1相接触的源极6和漏极7;
设置在源极6和漏极7之上的栅绝缘层5;
设置在栅绝缘层5之上的栅极4,
其中,有源层1设置在基底3之上。
图7示出了顶栅结构的驱动晶体管结构,即栅极4设置在栅绝缘层5之上,而栅绝缘层5设置在沟道区之上。通过在有源层1下方设置光保护层2,当存在位于基底3底部的光源,使得光从薄膜晶体管底部射入时,能够有效地吸收射入光线,从而保证有源层1的稳定。
如图8所示,还可以在有源层1上方设置光保护层2,当存在位于薄膜晶体管顶部的光源,使得光从薄膜晶体管顶部射入时,能够有效地吸收射入光线,从而保证有源层1的稳定。
如图9所示,进一步地,还可以在有源层1的上方及下方都设置光保护层,当在薄膜晶体管的顶部和底部都存在光源时,能够有效地吸收从两个方向射入的光线,从而保证有源层1的稳定。
优选地,有源层1和光保护层2宽度相等。可以先形成有源层1和光保护层2,,然后通过一道光刻工艺对两个层进行蚀刻,简化制作流程。
优选地,光保护层2的宽度大于有源层1的宽度。由于射向有源层1的光线一般都不是垂直射入,将光保护层2的宽度设置的比有源层1宽,可以保证当存在非垂直射向有源层1的光线时,光保护层2仍能够吸收其中波长较长的光,以保证有源层1的稳定性。
优选地,光保护层2用于吸收波长小于539nm的光波。
优选地,光保护层2的禁带宽度大于1.1eV且小于2.3eV,且透过率低于70%。采用光透过率较低的材料,在保证吸收入射光线的同时,还能保证透射到光保护层2另一侧的光较少,亦可减少光对有源层1的影响。
优选地,光保护层2的材料为包含氟、氯、溴、硫、碳、碘、硒中的一种或多种阴离子,以及包含硼、铝、镓、铟、锡、钛、铪、硅中的一种或多种阳离子的金属氧化物。包含这些阴离子和阳离子的金属氧化物具有禁带宽度小(即可吸收波长较长的光),光稳定性强,光透过率低的特点。
有源层1可与光保护层2的材料相同或不同,包括但不限于铟(In),镓(Ga),锌(Zn),铪(Hf),锡(Sn),铝(Al)等金属元素中一种或多种形成的金属氧化物半导体,如ZnO,InZnO(IZO),ZnSnO(ZTO),InSnZnO(ITZO),GaZnO(GZO),InGaZnO(IGZO),HfInZnO(HIZO),SnInO(ITO),AlInZnO(AIZO)等。
优选地,光保护层2的材料为锌基氮氧化物。
锌基氮氧化物(ZnON)的禁带宽度为1.3eV,可吸收波长小于的光波,所以ZnON吸收紫外/可见光范围的光波,并在紫外/可见光透过率很低,起到吸收长波并降低光强的目的。
如图10和图11所示,比较ZnON与其他材料的稳定性。由于材料中的氧空位一般取决于材料中氧离子的数量,如图10所示,ZnON中的阴离子除了包含氧离子,还包含氮离子,而IGZO中的阴离子则只包含氧离子,所以IGZO中的氧空位数量多于ZnON中的氧空位数量。而且,ZnON的价带顶高于IGZO的价带顶,所以相对于IGZO的氧空位中的电子,ZnON的氧空位中的电子需要吸收更多的能量才能从价带跃迁到导带。综合上述两种原因,ZnON的氧空位比IGZO少,而且氧空位缺态(即失去电子的氧空位)也更少。
另外,如图11所述,ZnON在暗处和光照两种情况下,迁移率和稳定性的变化都相对较小,而GIZO和IZO在暗处和光照两种情况下,迁移率和稳定性的变化都相对较大,可见ZnON相对于GIZO和IZO的光稳定性更强,作为光保护层2能够更好地吸收波长较短的光线,而不易发生变化。
优选地,光保护层2的厚度为5-100nm。该厚度的光保护层具有较低的光透过率。
本发明还提出了一种显示装置,包括上述任一项的薄膜晶体管。
需要说明的是,本实施例中的显示装置可以为:电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
如图11所示,根据本发明一个实施例的薄膜晶体管制作方法,包括:
S1,形成有源层1;
S2,在有源层1之上和/或在有源层1之下形成光保护层2,光保护层2用于吸收波长小于预设波长的光波。
优选地,在形成有源层1之前还包括:
在基底3之上形成栅极4;
在栅极4之上形成栅绝缘层5;
在栅绝缘层5之上形成与有源层1相接触的源极6和漏极7,
则形成有源层1包括:
在栅绝缘层5之上形成有源层1。
优选地,在形成有源层1之前还包括:
在基底3上形成与有源层1相接触的源极6和漏极7;
在源极6和漏极7之上形成栅绝缘层5;
在栅绝缘层5之上形成栅极4;
其中,形成有源层1包括:
在基底3上形成有源层1。
需要说明的是,上述形成层的操作,包括但不仅限于(化学相、物理相)沉积成膜、(磁控)溅射成膜,并且本领域技术人员可以理解,在形成每个层之后,可以根据需要在其上进一步形成相应的图案,本发明对此不再赘述。
根据上述技术方案,通过在有源层上方设置光保护层,能够吸收从薄膜晶体管上方射入沟道区的光线,通过在有源层下方设置光保护层,能够吸收从薄膜晶体管下方射入沟道区的光线,从而有效避免光线对沟道区的有源层造成影响,保证薄膜晶体管中的驱动晶体管具有较强的光稳定性。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (11)
1.一种薄膜晶体管,其特征在于,包括:
有源层,所述有源层的材料为氧化物半导体;
设置在所述有源层之上和/或设置在所述有源层之下的光保护层,
其中,所述光保护层用于吸收波长小于953nm的光波;所述光保护层的材料为锌基氮氧化物,禁带宽度为1.3eV,且透过率低于70%。
2.权利要求1所述的薄膜晶体管,其特征在于,还包括:
基底;
设置在所述基底之上的栅极;
设置在所述栅极之上的栅绝缘层;
设置在所述栅绝缘层之上,且与所述有源层相接触的源极和漏极,
其中,所述有源层设置在所述栅绝缘层之上。
3.权利要求1所述的薄膜晶体管,其特征在于,还包括:
基底;
设置在所述基底之上,且与所述有源层相接触的源极和漏极;
设置在所述源极和漏极之上的栅绝缘层;
设置在所述栅绝缘层之上的栅极;
其中,所述有源层设置在所述基底之上。
4.权利要求1所述的薄膜晶体管,其特征在于,所述有源层和所述光保护层宽度相等。
5.权利要求1所述的薄膜晶体管,其特征在于,所述光保护层的宽度大于所述有源层的宽度。
6.权利要求1所述的薄膜晶体管,其特征在于,所述光保护层的厚度为5-100nm。
7.一种阵列基板,其特征在于,包括权利要求1至6中任一项所述的薄膜晶体管。
8.一种显示装置,其特征在于,包括权利要求7所述的阵列基板。
9.一种薄膜晶体管制作方法,其特征在于,包括:
形成有源层,所述有源层的材料为氧化物半导体;
在所述有源层之上和/或在所述有源层之下形成光保护层,所述光保护层用于吸收波长小于953nm的光波;所述光保护层的材料为锌基氮氧化物,禁带宽度为1.3eV,且透过率低于70%。
10.根据权利要求9所述的薄膜晶体管制作方法,其特征在于,在形成所述有源层之前还包括:
在基底之上形成栅极;
在所述栅极之上形成栅绝缘层;
在所述栅绝缘层之上形成与所述有源层相接触的源极和漏极,
则所述形成有源层包括:
在所述栅绝缘层之上形成所述有源层。
11.根据权利要求9薄膜晶体管制作方法,其特征在于,在形成所述有源层之前还包括:
在基底上形成与所述有源层相接触的源极和漏极;
在所述源极和漏极之上形成栅绝缘层;
在所述栅绝缘层之上形成栅极;
其中,所述形成有源层包括:
在所述基底上形成所述有源层。
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CN104681623A (zh) * | 2013-11-26 | 2015-06-03 | 乐金显示有限公司 | 氧化物薄膜晶体管及包括氧化物薄膜晶体管的阵列基板 |
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