WO2016197526A1 - 薄膜晶体管及其制作方法以及阵列基板、显示装置 - Google Patents

薄膜晶体管及其制作方法以及阵列基板、显示装置 Download PDF

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WO2016197526A1
WO2016197526A1 PCT/CN2015/093394 CN2015093394W WO2016197526A1 WO 2016197526 A1 WO2016197526 A1 WO 2016197526A1 CN 2015093394 W CN2015093394 W CN 2015093394W WO 2016197526 A1 WO2016197526 A1 WO 2016197526A1
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active layer
layer
thin film
film transistor
photoprotective
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PCT/CN2015/093394
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English (en)
French (fr)
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王美丽
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京东方科技集团股份有限公司
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Priority to US15/127,991 priority Critical patent/US10249571B2/en
Publication of WO2016197526A1 publication Critical patent/WO2016197526A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2229/00—Indexing scheme for semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, for details of semiconductor bodies or of electrodes thereof, or for multistep manufacturing processes therefor

Definitions

  • Embodiments of the present disclosure relate to a thin film transistor, a method of fabricating a thin film transistor, an array substrate, and a display device.
  • oxide semiconductor materials include IGZO (indium gallium zinc oxide), ITZO (indium tin zinc oxide), etc., in which there are a large number of oxygen vacancy defect states, and oxygen vacancy defects include two Electrons, when the oxides in the transistor (TFT) are exposed to light, the electrons in the oxygen vacancies are excited to transition to the vicinity of the conduction band of the oxide material; when the light is removed, the photogenerated electrons caused by the oxygen vacancies return to the ground state The speed is slower, resulting in a larger leakage current of the TFT and a poorer light stability of the TFT.
  • TFT indium gallium zinc oxide
  • ITZO indium tin zinc oxide
  • the industry mostly uses light-shielding organic materials, such as resin, BM (Black Matrix), CF (Color Filter) and other materials to shield the oxide TFT (mainly the active layer portion) to reduce the intensity of light irradiated onto the TFT. Thereby reducing the influence of illumination on the characteristics of the TFT.
  • the light-shielding layer is used to block the TFT by using the resin material, and the light intensity irradiated onto the TFT is reduced, thereby effectively improving the influence of illumination on the characteristics of the oxide TFT.
  • the above method for blocking the TFT by the organic material is only applicable to the case where the light source is irradiated from the top of the TFT.
  • the TFT is a bottom gate or a top gate structure
  • light is incident from the bottom of the TFT, that is, the light source is incident on the TFT through the substrate, as shown in FIG. 2 .
  • the above organic material cannot block the light-irradiating TFT, and the light still irradiates the active layer of the channel region to cause a large leakage current of the TFT.
  • One of the objects of embodiments of the present disclosure is to effectively reduce the intensity of light that is incident on the active layer, thereby ensuring that the transistor has greater light stability.
  • a photoprotective layer disposed over the active layer and/or disposed under the active layer
  • the photoprotective layer is used to absorb light of a predetermined wavelength.
  • the thin film transistor further includes:
  • a gate insulating layer disposed over the gate
  • a source and a drain disposed on the gate insulating layer and in contact with the active layer
  • the active layer is disposed on the gate insulating layer.
  • the thin film transistor further includes:
  • a source and a drain disposed on the substrate and in contact with the active layer
  • a gate insulating layer disposed over the source and the drain;
  • the active layer is disposed on the substrate.
  • the active layer and the photoprotective layer are equal in width.
  • the width of the photoprotective layer is greater than the width of the active layer.
  • the photoprotective layer is for absorbing light waves having a wavelength of less than 539 nm.
  • the photoprotective layer has a forbidden band width greater than 1.1 eV and less than 2.3 eV, and a transmittance of less than 70%.
  • the material of the photoprotective layer is a metal oxide, the metal oxide comprising at least one anion of fluorine, chlorine, bromine, sulfur, carbon, iodine, selenium, and boron, At least one cation of aluminum, gallium, indium, tin, titanium, antimony, or silicon.
  • the material of the photoprotective layer is a zinc-based oxynitride.
  • the photoprotective layer has a thickness of 5 to 100 nm.
  • At least one embodiment of the present disclosure also provides a display device comprising the thin film transistor of any of the above.
  • At least one embodiment of the present disclosure also provides a method of fabricating a thin film transistor, including:
  • a photoprotective layer is formed, the photoprotective layer being above and/or below the active layer, the photoprotective layer for absorbing light of a predetermined wavelength.
  • the method before the forming the active layer, the method includes:
  • the method further includes forming the active layer on the gate insulating layer, and forming a source and a drain in contact with the active layer over the gate insulating layer.
  • forming the active layer includes: forming the active layer on the substrate; the method further comprising:
  • forming the active layer comprises forming the active layer on the substrate.
  • the photoprotective layer By providing a photoprotective layer over the active layer, it is possible to absorb light incident into the channel region from above the thin film transistor, and by providing a photoprotective layer under the active layer, it is possible to absorb light incident from the lower portion of the thin film transistor into the channel region. Therefore, the light having a shorter wavelength is effectively prevented from affecting the active layer of the channel region, and the driving transistor in the thin film transistor has a strong light stability.
  • Figure 1 is a schematic view showing the structure of a light shielding layer in a conventional technique
  • FIG. 2 is a schematic view showing the structure of a bottom gate in a conventional technique
  • Figure 3 is a schematic view showing the structure of a top gate in a conventional technique
  • FIG. 4 is a schematic structural view of a thin film transistor according to an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural view of a thin film transistor according to still another embodiment of the present disclosure.
  • FIG. 6 is a schematic structural view of a thin film transistor according to still another embodiment of the present disclosure.
  • FIG. 7 is a schematic structural view of a thin film transistor according to still another embodiment of the present disclosure.
  • FIG. 8 is a schematic structural view of a thin film transistor according to still another embodiment of the present disclosure.
  • FIG. 9 is a schematic structural view of a thin film transistor according to still another embodiment of the present disclosure.
  • FIG. 10 illustrates zinc-based oxynitride and gallium indium zinc oxide according to still another embodiment of the present disclosure. a schematic diagram of the comparison of oxygen vacancies
  • FIG. 11 is a schematic view showing a comparison of stability of zinc-based nitrogen oxides with gallium indium zinc oxide and indium zinc oxide according to still another embodiment of the present disclosure
  • FIG. 12 shows a schematic flow chart of a method of fabricating a thin film transistor according to an embodiment of the present disclosure.
  • FIG. 4 illustrates a thin film transistor according to an embodiment of the present disclosure, including:
  • the energy level of the main defect state oxygen vacancy affecting the light stability of the active layer 1 is 2.3 eV, and the corresponding wavelength of light is: That is, light having a wavelength of less than 539 nm excites oxygen vacancies to affect the stability of the active layer 1 or even the entire driving transistor.
  • the photoprotective layer 2 By providing the photoprotective layer 2 under the active layer 1, light of a predetermined wavelength (for example, less than 539 nm) directed to the active layer 1 can be absorbed, thereby preventing light of a shorter wavelength from entering the active layer 1, avoiding The generation of oxygen vacancies in the active layer 1 ensures the stability of the active layer 1 and the entire driving transistor.
  • a predetermined wavelength for example, less than 539 nm
  • the thin film transistor further includes:
  • a gate insulating layer 5 disposed on the gate 4;
  • a source 6 and a drain 7 disposed on the gate insulating layer 5 and in contact with the active layer 1;
  • the active layer 1 is disposed on the gate insulating layer 5.
  • Fig. 4 shows the structure of the driving transistor of the bottom gate structure, that is, the gate electrode 4 is provided on the substrate.
  • FIG. 5 illustrates a thin film transistor differing from the transistor illustrated in FIG. 4 in that a photoprotective layer 2 is disposed over the active layer 1 when present at the top of the thin film transistor, in accordance with another embodiment of the present disclosure.
  • the light source can effectively absorb the incident light when the light is incident from the top of the thin film transistor, thereby ensuring the stability of the active layer 1.
  • a light protection layer may be disposed above and below the active layer 1, and when a light source is present at the top and bottom of the thin film transistor, it can be effectively The light incident from both directions is absorbed to ensure the stability of the active layer 1.
  • a top gate thin film transistor according to an embodiment of the present disclosure further includes:
  • a source 6 and a drain 7 disposed on the substrate 3 and in contact with the active layer 1;
  • a gate insulating layer 5 disposed over the source 6 and the drain 7;
  • the active layer 1 is disposed above the substrate 3.
  • the gate electrode 4 is disposed over the gate insulating layer 5, and the gate insulating layer 5 is disposed over the channel region.
  • FIG. 8 illustrates a top gate type thin film transistor in which a photoprotective layer 2 may be disposed over the active layer 1 in accordance with an embodiment of the present disclosure.
  • a light source located at the top of the thin film transistor so that light is incident from the top of the thin film transistor, the incident light can be efficiently absorbed, thereby ensuring the stability of the active layer 1.
  • FIG. 9 illustrates a top gate thin film transistor according to another embodiment of the present disclosure, wherein, further, a photoprotective layer may be disposed above and below the active layer 1 when on top of the thin film transistor and When the light source is present at the bottom, the light incident from both directions can be effectively absorbed, thereby ensuring the stability of the active layer 1.
  • the active layer 1 and the photoprotective layer 2 are equal in width.
  • the active layer 1 and the photoprotective layer 2 may be formed first, and then the two layers are etched by a photolithography process to simplify the fabrication process.
  • the width of the photoprotective layer 2 is greater than the width of the active layer 1. Since the light that is incident on the active layer 1 is generally not perpendicularly incident, the ratio of the width of the photoprotective layer 2 is set.
  • the source layer 1 is wide, and when the light is directed non-perpendicularly to the active layer 1, the photoprotective layer 2 can still absorb light having a shorter wavelength therein to ensure the stability of the active layer 1.
  • the photoprotective layer 2 is used to absorb light waves having a wavelength of less than 539 nm.
  • the photoprotective layer 2 has a forbidden band width greater than 1.1 eV and less than 2.3 eV, and a transmittance of less than 70%.
  • the use of a material having a low light transmittance ensures that the incident light is absorbed while ensuring less light transmitted to the other side of the photoprotective layer 2, and the influence of light on the active layer 1 can also be reduced.
  • the material of the photoprotective layer 2 is a metal oxide containing at least one anion of fluorine, chlorine, bromine, sulfur, carbon, iodine, selenium, and boron, aluminum, gallium, indium, tin, titanium. At least one cation in bismuth, silicon.
  • the metal oxide containing at least one of these anions and at least one of these cations has a small band gap (that is, light having a short absorption wavelength), is excellent in light stability, and has a low light transmittance.
  • the active layer 1 may be the same as or different from the material of the photoprotective layer 2, including but not limited to indium (In), gallium (Ga), zinc (Zn), hafnium (Hf), tin (Sn), aluminum (Al), etc.
  • a metal oxide semiconductor formed by at least one of metal elements such as ZnO, InZnO (IZO), ZnSnO (ZTO), InSnZnO (ITZO), GaZnO (GZO), InGaZnO (IGZO), HfInZnO (HIZO), SnInO ( ITO), AlInZnO (AIZO), and the like.
  • the material of the photoprotective layer 2 is a zinc-based oxynitride.
  • Zinc-based oxynitride has a band gap of 1.3 eV and an absorbable wavelength less than The light, so ZnON absorbs visible light and ultraviolet light with a wavelength of less than 953 nm, and has a low transmittance of light in the ultraviolet/visible range, thereby absorbing long waves and reducing light intensity.
  • Figures 10 and 11 show the results of the comparison of the stability of ZnON with other materials. Since the oxygen vacancies in the material generally depend on the amount of oxygen ions in the material, as shown in Figure 10, the anions in ZnON contain oxygen ions and nitrogen ions, while the anions in IGZO contain only oxygen ions, so oxygen vacancies in IGZO The number is more than the number of oxygen vacancies in ZnON. Moreover, the valence band top of ZnON is higher than the valence band top of IGZO, so the electrons in the oxygen vacancies of ZnON need to absorb more energy to transition from the valence band to the conduction band than the electrons in the oxygen vacancies of IGZO. For the above two reasons, ZnON has less oxygen vacancies than IGZO, and there are fewer oxygen vacancies (ie, oxygen vacancies that lose electrons).
  • the photoprotective layer 2 has a thickness of 5 to 100 nm.
  • the thickness of the photoprotective layer has a lower light transmittance.
  • At least one embodiment of the present disclosure also proposes a display device including any of the above thin film transistors.
  • the display device in the embodiment of the present disclosure may be any product or component having a display function, such as an electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, and the like.
  • At least one embodiment of the present disclosure also provides a method of fabricating a thin film transistor, as shown in FIG. 12, the method comprising:
  • a light protection layer 2 is formed on the active layer 1 and/or under the active layer 1, and the light protection layer 2 is for absorbing light waves of a predetermined wavelength.
  • the method before forming the active layer 1, the method includes:
  • a source 6 and a drain 7 which are in contact with the active layer 1 are formed over the gate insulating layer 5,
  • Forming the active layer 1 includes forming the active layer 1 over the gate insulating layer 5.
  • forming the active layer 1 includes: forming an active layer 1 on the substrate 3;
  • the method further includes:
  • a gate electrode 4 is formed over the gate insulating layer 5.
  • the present disclosure by providing a photoprotective layer over the active layer, light incident into the channel region from above the thin film transistor can be absorbed, and by providing a photoprotective layer under the active layer, it can be absorbed from under the thin film transistor The light incident into the channel region effectively prevents the light from affecting the active layer of the channel region, and ensures that the driving transistor in the thin film transistor has strong light stability.

Abstract

一种薄膜晶体管，包括有源层(1)；设置在所述有源层(1)之上和/或设置在所述有源层之下的光保护层(2)，所述光保护层(2)用于吸收波长预定波长的光。通过在有源层(1)上方设置光保护层(2)，能够吸收从薄膜晶体管上方射入沟道区的光，通过在有源层(1)下方设置光保护层(2)，能够吸收从薄膜晶体管下方射入沟道区的光，从而有效避免光对沟道区的有源层造成影响，保证薄膜晶体管中的驱动晶体管具有较强的光稳定性。还提供了一种薄膜晶体管的制作方法以及包含该薄膜晶体管的阵列基板和显示装置。

Description

薄膜晶体管及其制作方法以及阵列基板、显示装置 技术领域
本公开的实施例涉及一种薄膜晶体管、一种薄膜晶体管制作方法、一种阵列基板和一种显示装置。
背景技术
目前研究较多的氧化物半导体材料包括IGZO(铟镓锌氧化物)、ITZO(铟锡锌氧化物)等，在这些氧化物材料中存在大量的氧空位缺陷态，氧空位缺陷态中包含两个电子，当晶体管(TFT)中的这些氧化物受到光照射时，氧空位中在电子受到激发跃迁到氧化物材料的导带附近；当去掉光照后，由氧空位引起的光生电子恢复到基态的速度较慢，从而导致TFT的漏电流较大，TFT光稳定性较差。
目前，业界多采用遮光有机材料，如resin，BM(Black Matrix)，CF(Color Filter)等材料对氧化物TFT(主要是有源层部分)进行遮光处理，降低照射到TFT上的光强度，从而减少光照对TFT特性的影响。如图1所述，利用resin材料制作遮光层遮挡TFT，降低照射到TFT上的光强，可有效改善光照对氧化物TFT特性的影响。
但是，上述有机材料遮挡TFT的方法仅适用于光源从TFT顶部照射的情况，当TFT为底栅或顶栅结构，而光从TFT底部入射，即光源透过基板入射到TFT上，如图2和图3所示，上述有机材料无法遮挡光照射TFT，光仍会照射到沟道区的有源层导致TFT产生较大的漏电流。
发明内容
本公开的实施例的目的之一是有效降低照射到有源层上的光强，从而保证晶体管具有较强的光稳定性。
本公开的至少一个实施例提供了一种薄膜晶体管，包括：
有源层；
设置在所述有源层之上和/或设置在所述有源层之下的光保护层，
其中，所述光保护层用于吸收预定波长的光。
在本公开的一个实施例中，所述薄膜晶体管还包括：
基底；
设置在所述基底之上的栅极；
设置在所述栅极之上的栅绝缘层；
设置在所述栅绝缘层之上，且与所述有源层相接触的源极和漏极，
其中，所述有源层设置在所述栅绝缘层之上。
在本公开的一个实施例中，所述薄膜晶体管还包括：
基底；
设置在所述基底之上，且与所述有源层相接触的源极和漏极；
设置在所述源极和漏极之上的栅绝缘层；
设置在所述栅绝缘层之上的栅极；
其中，所述有源层设置在所述基底之上。
在本公开的一个实施例中，所述有源层和所述光保护层宽度相等。
在本公开的一个实施例中，所述光保护层的宽度大于所述有源层的宽度。
在本公开的一个实施例中，所述光保护层用于吸收波长小于539nm的光波。
在本公开的一个实施例中，所述光保护层的禁带宽度大于1.1eV且小于2.3eV，且透过率低于70％。
在本公开的一个实施例中，所述光保护层的材料为金属氧化物，所述金属氧化物包含氟、氯、溴、硫、碳、碘、硒中的至少一种阴离子以及包含硼、铝、镓、铟、锡、钛、铪、硅中的至少一种阳离子。
在本公开的一个实施例中，所述光保护层的材料为锌基氮氧化物。
在本公开的一个实施例中，所述光保护层的厚度为5-100nm。
本公开的至少一个实施例还提供了一种显示装置，包括上述任一项所述的薄膜晶体管。
本公开的至少一个实施例还提供了一种薄膜晶体管制作方法，包括：
形成有源层；
形成光保护层，所述光保护层位于所述有源层之上和/或在所述有源层之下，所述光保护层用于吸收预定波长的光。
在本公开的一个实施例中，在形成所述有源层之前，所述方法包括：
在基底之上形成栅极；
在所述栅极之上形成栅绝缘层；
所述方法还包括，在所述栅绝缘层上形成所述有源层，以及在所述栅绝缘层之上形成与所述有源层相接触的源极和漏极。
在本公开的一个实施例中，形成所述有源层包括：在所述基底上形成所述有源层；所述方法还包括：
在基底上形成与所述有源层相接触的源极和漏极；
在所述源极和漏极之上形成栅绝缘层；
在所述栅绝缘层之上形成栅极；
其中，所述形成有源层包括在所述基底上形成所述有源层。
通过在有源层上方设置光保护层，能够吸收从薄膜晶体管上方射入沟道区的光，通过在有源层下方设置光保护层，能够吸收从薄膜晶体管下方射入沟道区的光，从而有效避免波长较短的光对沟道区的有源层造成影响，保证薄膜晶体管中的驱动晶体管具有较强的光稳定性。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1示出了惯常技术中遮光层的结构示意图；
图2示出了惯常技术中底栅结构示意图；
图3示出了惯常技术中顶栅结构示意图；
图4示出了根据本公开一个实施例的薄膜晶体管的结构示意图；
图5示出了根据本公开又一个实施例的薄膜晶体管的结构示意图；
图6示出了根据本公开又一个实施例的薄膜晶体管的结构示意图；
图7示出了根据本公开又一个实施例的薄膜晶体管的结构示意图；
图8示出了根据本公开又一个实施例的薄膜晶体管的结构示意图；
图9示出了根据本公开又一个实施例的薄膜晶体管的结构示意图；
图10示出了根据本公开又一个实施例的锌基氮氧化物与镓铟锌氧化物 的氧空位比较示意图；
图11示出了根据本公开又一个实施例的锌基氮氧化物与镓铟锌氧化物和氧化铟锌的稳定性比较示意图；以及
图12示出了根据本公开一个实施例的薄膜晶体管制作方法示意流程图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
图4示出了根据本公开一个实施例的薄膜晶体管，包括：
有源层1；
设置在有源层1之下的光保护层2，光保护层2用于吸收预定波长的光。
影响有源层1光稳定性的主要缺陷态氧空位的能级为2.3eV，对应的光波长为：
Figure PCTCN2015093394-appb-000001
即波长小于539nm的光都会激发氧空位从而影响有源层1乃至整个驱动晶体管的稳定性。
通过在有源层1之下设置光保护层2，可以吸收射向有源层1的预定波长(例如小于539nm)的光，从而避免波长较短的光射入有源层1，避免了在有源层1中产生氧空位，保证了有源层1和整个驱动晶体管的稳定性。
在图4所示的实施例中，所述薄膜晶体管还包括：
基底3；
设置在基底3之上的栅极4；
设置在栅极4之上的栅绝缘层5；
设置在栅绝缘层5之上，且与有源层1相接触的源极6和漏极7；
其中，有源层1设置在栅绝缘层5之上。
图4示出了底栅结构的驱动晶体管结构，即栅极4设置在基底上。通过在有源层1下方设置光保护层2，当存在位于基底3底部的光源，使得光从薄膜晶体管底部射入时，能够有效地吸收射入光，保证有源层1的稳定。
图5示出了根据本公开的另一个实施例的薄膜晶体管，该薄膜晶体管与图4中所示的晶体管的差异在于，光保护层2设置在有源层1上方，当存在位于薄膜晶体管顶部的光源，使得光从薄膜晶体管顶部射入时，能够有效地吸收射入光，从而保证有源层1的稳定。
如图6所示，在根据本公开的又一个实施例中，还可以在有源层1的上方及下方都设置光保护层，当在薄膜晶体管的顶部和底部都存在光源时，能够有效地吸收从两个方向射入的光，从而保证有源层1的稳定。
如图7所示，根据本公开的一个实施例的顶栅型薄膜晶体管还包括：
基底3；
设置在基底3之上，且与有源层1相接触的源极6和漏极7；
设置在源极6和漏极7之上的栅绝缘层5；
设置在栅绝缘层5之上的栅极4，
其中，有源层1设置在基底3之上。
在图7所示的顶栅型薄膜晶体管结构中，栅极4设置在栅绝缘层5之上，而栅绝缘层5设置在沟道区之上。通过在有源层1下方设置光保护层2，当存在位于基底3底部的光源，使得光从薄膜晶体管底部射入时，能够有效地吸收射入光，从而保证有源层1的稳定。
图8示出了根据本公开的一个实施例的顶栅型薄膜晶体管，其中，可以在有源层1上方设置光保护层2。当存在位于薄膜晶体管顶部的光源，使得光从薄膜晶体管顶部射入时，能够有效地吸收射入光，从而保证有源层1的稳定。
如图9示出了根据本公开的另一个实施例的顶栅型薄膜晶体管，其中，进一步地，还可以在有源层1的上方及下方都设置光保护层，当在薄膜晶体管的顶部和底部都存在光源时，能够有效地吸收从两个方向射入的光，从而保证有源层1的稳定。
在本公开的一个实施例中，有源层1和光保护层2宽度相等。可以先形成有源层1和光保护层2,，然后通过一道光刻工艺对两个层进行蚀刻，简化制作流程。
在本公开的一个实施例中，光保护层2的宽度大于有源层1的宽度。由于射向有源层1的光一般都不是垂直射入，将光保护层2的宽度设置的比有 源层1宽，在光非垂直地射向有源层1时，光保护层2仍能够吸收其中波长较短的光，以保证有源层1的稳定性。
例如，光保护层2用于吸收波长小于539nm的光波。
例如，光保护层2的禁带宽度大于1.1eV且小于2.3eV，且透过率低于70％。采用光透过率较低的材料，在保证吸收入射光的同时，还能保证透射到光保护层2另一侧的光较少，亦可减少光对有源层1的影响。
例如，光保护层2的材料为金属氧化物，该金属氧化物包含氟、氯、溴、硫、碳、碘、硒中的至少一种阴离子，以及硼、铝、镓、铟、锡、钛、铪、硅中的至少一种阳离子。包含这些阴离子中的至少一种和这些阳离子的至少一种的金属氧化物具有禁带宽度小(即可吸收波长较短的光)，光稳定性强，光透过率低的特点。
有源层1可与光保护层2的材料相同或不同，包括但不限于铟(In)，镓(Ga)，锌(Zn)，铪(Hf)，锡(Sn)，铝(Al)等金属元素中的至少一种所形成的金属氧化物半导体，如ZnO，InZnO(IZO)，ZnSnO(ZTO)，InSnZnO(ITZO)，GaZnO(GZO)，InGaZnO(IGZO)，HfInZnO(HIZO)，SnInO(ITO)，AlInZnO(AIZO)等。
例如，光保护层2的材料为锌基氮氧化物。
锌基氮氧化物(ZnON)的禁带宽度为1.3eV，可吸收波长小于
Figure PCTCN2015093394-appb-000002
的光，所以ZnON吸收波长小于953nm的可见光以及紫外光，并对紫外/可见光范围内的光的透过率很低，起到吸收长波并降低光强的目的。
图10和图11示出了ZnON与其他材料的稳定性的比较结果。由于材料中的氧空位一般取决于材料中氧离子的数量，如图10所示，ZnON中的阴离子包含氧离子和氮离子，而IGZO中的阴离子则只包含氧离子，所以IGZO中的氧空位数量多于ZnON中的氧空位数量。而且，ZnON的价带顶高于IGZO的价带顶，所以相对于IGZO的氧空位中的电子，ZnON的氧空位中的电子需要吸收更多的能量才能从价带跃迁到导带。综合上述两种原因，ZnON的氧空位比IGZO少，而且氧空位缺态(即失去电子的氧空位)也更少。
另外，如图11所示，ZnON在暗处和光照两种情况下，迁移率和稳定性 的变化都相对较小，而GIZO和IZO在暗处和光照两种情况下，迁移率和稳定性的变化都相对较大。可见，ZnON相对于GIZO和IZO的光稳定性更强，作为光保护层2能够更好地吸收波长较短的光，而不易发生变化。
例如，光保护层2的厚度为5-100nm。该厚度的光保护层具有较低的光透过率。
本公开的至少一个实施例还提出了一种显示装置，包括上述任一种薄膜晶体管。
需要说明的是，本公开的实施例中的显示装置可以为：电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本公开的至少一个实施例还提供了一种制作薄膜晶体管的方法，如图12所示，所述方法包括：
S1，形成有源层1；
S2，在有源层1之上和/或在有源层1之下形成光保护层2，光保护层2用于吸收预定波长的光波。
在本公开的一个实施例中，在形成有源层1之前，所述方法包括：
在基底3之上形成栅极4；
在栅极4之上形成栅绝缘层5；
在栅绝缘层5之上形成与有源层1相接触的源极6和漏极7，
形成有源层1包括：在栅绝缘层5之上形成有源层1。
在本公开的一个实施例中，形成有源层1包括：在基底3上形成有源层1；
所述方法还包括：
在基底3上形成与有源层1相接触的源极6和漏极7；
在源极6和漏极7之上形成栅绝缘层5；
在栅绝缘层5之上形成栅极4。
需要说明的是，上述形成层的操作，包括但不仅限于(化学相、物理相)沉积成膜、(磁控)溅射成膜，并且本领域技术人员可以理解，在形成每个层之后，可以根据需要进一步对该层形成相应的图案，本公开的实施例对此不再赘述。
在本公开的实施例中，通过在有源层上方设置光保护层，能够吸收从薄膜晶体管上方射入沟道区的光，通过在有源层下方设置光保护层，能够吸收从薄膜晶体管下方射入沟道区的光，从而有效避免光对沟道区的有源层造成影响，保证薄膜晶体管中的驱动晶体管具有较强的光稳定性。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。
本申请要求于2015年6月8日递交的中国专利申请第201510309195.2号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (15)

  1. 一种薄膜晶体管，其包括：
    有源层和设置在所述有源层之上和/或设置在所述有源层之下的光保护层；
    其中，所述光保护层配置为吸收预定波长的光。
  2. 权利要求1所述的薄膜晶体管，其还包括：
    基底；
    设置在所述基底之上的栅极；
    设置在所述栅极之上的栅绝缘层；
    设置在所述栅绝缘层之上，且与所述有源层相接触的源极和漏极，
    其中，所述有源层设置在所述栅绝缘层之上。
  3. 权利要求1所述的薄膜晶体管，其还包括：
    基底；
    设置在所述基底之上，且与所述有源层相接触的源极和漏极；
    设置在所述源极和漏极之上的栅绝缘层；
    设置在所述栅绝缘层之上的栅极；
    其中，所述有源层设置在所述基底之上。
  4. 权利要求1至3中任何一项所述的薄膜晶体管，其中，所述有源层和所述光保护层宽度相等。
  5. 权利要求1至4中任何一项所述的薄膜晶体管，其中，所述光保护层的宽度大于所述有源层的宽度。
  6. 权利要求1至5中任何一项所述的薄膜晶体管，其中，所述光保护层用于吸收波长小于539nm的光。
  7. 权利要求1至6中任何一项所述的薄膜晶体管，其中，所述光保护层的禁带宽度大于1.1eV且小于2.3eV，且透过率低于70％。
  8. 权利要求1至7中任何一项所述的薄膜晶体管，其中，所述光保护层由金属氧化物制成，所述金属氧化物包含氟、氯、溴、硫、碳、碘、硒中的至少一种阴离子，以及硼、铝、镓、铟、锡、钛、铪、硅中的至少一种阳离子。
  9. 权利要求1至8中任何一项所述的薄膜晶体管，其中，所述光保护层由锌基氮氧化物制成。
  10. 权利要求1至9中任何一项所述的薄膜晶体管，其中，所述光保护层的厚度为5-100nm。
  11. 一种阵列基板，其包括权利要求1至10中任何一项所述的薄膜晶体管。
  12. 一种显示装置，其包括权利要求11所述的阵列基板。
  13. 一种制作薄膜晶体管的方法，其包括：
    形成有源层；
    在所述有源层之上和/或在所述有源层之下形成光保护层，所述光保护层配置为吸收预定波长的光。
  14. 根据权利要求13所述的方法，其中，在形成所述有源层之前，所述方法还包括：
    在基底之上形成栅极；
    在所述栅极之上形成栅绝缘层；
    在所述栅绝缘层之上形成与所述有源层相接触的源极和漏极；
    其中，所述形成有源层包括：在所述栅绝缘层之上形成所述有源层。
  15. 根据权利要求13所述的方法，其中，所述形成有源层包括在所述基底上形成所述有源层；
    所述方法还包括：
    在基底上形成与所述有源层相接触的源极和漏极；
    在所述源极和漏极之上形成栅绝缘层；
    在所述栅绝缘层之上形成栅极。
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