WO2016165224A1 - 金属氧化物薄膜晶体管及制备方法、显示基板和显示装置 - Google Patents
金属氧化物薄膜晶体管及制备方法、显示基板和显示装置 Download PDFInfo
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- WO2016165224A1 WO2016165224A1 PCT/CN2015/084343 CN2015084343W WO2016165224A1 WO 2016165224 A1 WO2016165224 A1 WO 2016165224A1 CN 2015084343 W CN2015084343 W CN 2015084343W WO 2016165224 A1 WO2016165224 A1 WO 2016165224A1
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- Prior art keywords
- metal oxide
- oxygen
- layer
- thin film
- film transistor
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 54
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 76
- 239000001301 oxygen Substances 0.000 claims abstract description 76
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000005247 gettering Methods 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 29
- 230000002950 deficient Effects 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 16
- 230000007547 defect Effects 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 109
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Definitions
- the present disclosure relates to the field of display technology, and in particular, to a metal oxide thin film transistor and a corresponding fabrication method, display substrate, and display device.
- TFT-LCDs thin film transistor liquid crystal displays
- CRT cathode ray tube
- the performance of thin film transistors (TFTs) directly affects the quality of the display.
- PPI pixels per inch
- the development of high mobility materials has become a hot spot.
- the conventional polysilicon thin film transistor has a high mobility, the preparation process is complicated, the preparation cost is high, and the requirements for large-area production cannot be satisfied.
- the oxide thin film transistor is suitable for large-area production, but the mobility is low, and currently only 10-30 cm 2 /Vs, which needs to be further improved.
- m* is the effective mass of the electron and ⁇ is the carrier release time.
- a particular material has the ability to absorb strong oxygen defects by removing an excess of oxygen dangling bonds from the active layer by forming an oxygen-depleted gettering layer between the active layer and the source and drain electrodes.
- the oxygen-deficient state increases the carrier release time, thereby increasing the mobility of the metal oxide thin film transistor.
- the oxide as the material of the oxygen-depleted gettering layer should be more stable than the metal oxide in the active layer.
- the Gibbs free energy is generated by an oxide unit volume standard to judge the stability of various oxides.
- the standard Gibbs free energy of a compound is a measure of whether the compound is easily decomposed into the corresponding elemental substance, that is, the larger the standard Gibbs free energy, the more stable the compound, and the more easily the compound is easily decomposed into the corresponding elemental substance.
- Figure 1 is a graph showing the change in Gibbs free energy per unit volume standard of a common oxide, in which, at a certain temperature, when ⁇ r G m ⁇ 0, the reaction of generating oxides from the corresponding elemental substance in the standard state can Spontaneously, and the smaller the value of ⁇ r G m (i.e., the larger the absolute value), the stronger the stability of the oxide, and the more difficult it is to decompose into a simple substance.
- materials such as Hf, Ti, Be, Al, and Ca have strong oxide stability.
- a material that is more stable to oxides can absorb weaker oxygen dangling bonds and oxygen-deficient states from less stable oxides.
- a metal oxide thin film transistor is provided in a first aspect of the present disclosure, wherein an oxygen deficiency may be present between the active layer and the source, and/or between the active layer and the drain
- the oxygen-depleted gettering layer of the gettering material the unit volume standard of the oxide of the oxygen-depleted gettering material generates Gibbs free energy greater than the metal oxide in the active layer.
- the metal oxide thin film transistor In the metal oxide thin film transistor, it has strong oxygen absorption ability (ie, corresponding oxide)
- the oxygen-depleted gettering layer of the unit volume standard generates a large Gibbs free energy can absorb the weak oxygen dangling bonds and the oxygen-deficient state in the active layer of the metal oxide, thereby effectively improving the metal oxide thin film transistor Mobility.
- the oxygen-depleted gettering layer may be disposed between the source and the active layer, or between the drain and the active layer, or in particular, disposed on the active layer and the source and drain electrodes To further improve the mobility of the metal oxide thin film transistor.
- the thickness of the oxygen-depleted gettering layer may be 100 to In the scope of.
- the thickness of the oxygen-depleted gettering layer is related to the thickness of the active layer, the material and the oxygen dangling bonds and the concentration of the oxygen-deficient state.
- the thickness of the active layer is thick, the metal oxide in the active layer is relatively stable, or the concentration of the oxygen dangling bond and the oxygen-deficient state is large, the thickness of the oxygen-depleted gettering layer may be correspondingly increased. It is pointed out that those skilled in the art can design and implement an oxygen-deficient gettering layer having different thicknesses according to actual needs.
- the oxygen-deficient gettering material may be selected from the group consisting of Hf, Ti, Be, Al, Si, and Ca.
- the oxides of the above materials are excellent in stability and are very suitable for use as an oxygen-deficient gettering layer in metal oxide thin film transistors.
- the oxygen-depleted gettering material may be the same as the source and drain materials.
- the oxygen-depleted gettering layer and the source and the drain can be simultaneously formed, so that no additional process steps are added, the preparation is simple, and the cost is lowered.
- the metal oxide in the active layer may be selected from oxides of Zn, In, Sn, and Ga.
- the stability of the above oxide is low, and accordingly there are several materials suitable for use as an oxygen-deficient gettering layer in a metal oxide thin film transistor.
- the metal oxide in the active layer may include metal oxynitride.
- a method of fabricating a metal oxide thin film transistor may include sequentially forming a gate layer, a gate insulating layer, and an active layer on a substrate, and patterning each layer Processing; forming an oxygen-deficient gettering layer containing an oxygen-deficient gettering material on the active layer; making a source-drain electrode layer; performing a patterning process on the source-drain electrode layer and the oxygen-depleting gettering layer, wherein the oxygen defect is removed a layer between the active layer and the source, and/or between the active layer and the drain, the unit volume standard of the oxide of the oxygen-deficient gettering material generates Gibbs free energy greater than that in the active layer Metal oxide.
- the oxygen gettering ability having a strong oxygen gettering ability (that is, the Gibbs free energy per unit volume standard corresponding to the oxide is generated) is large.
- the removing layer can absorb the weak oxygen dangling bonds and the oxygen-deficient state in the active layer of the metal oxide, thereby effectively increasing the mobility of the metal oxide thin film transistor.
- oxygen defect absorption may be made between the source and the active layer, or between the drain and the active layer, or in particular between the active layer and the source and drain. Layer to further increase the mobility of the metal oxide thin film transistor.
- the above method may further include an annealing step after the source and drain electrode layers are formed.
- the annealing step can accelerate the absorption speed of the oxygen defect state and the oxygen dangling bond in the active layer by the oxygen defect gettering layer, thereby facilitating carrier transport, thereby increasing the mobility of the metal oxide thin film transistor.
- the annealing step may have an annealing temperature of 100 ° C to 350 ° C and an annealing time of 30 to 90 minutes.
- a suitable annealing process can improve device mobility, improve threshold voltage, current switching ratio and other important parameters to improve device performance.
- the annealing temperature should not be too high. When the annealing temperature is too high, the mobility of the metal oxide thin film transistor will decrease as the temperature increases.
- the above method may further include the step of forming a passivation layer over the resultant metal oxide thin film transistor.
- the present disclosure also provides a display substrate including the metal oxide thin film transistor according to the first aspect of the present disclosure and a display device including the display substrate, which has similarities to those described above with respect to the metal oxide thin film transistor Features and advantages are not described here.
- Figure 1 is a graph showing the generation of Gibbs free energy change for a common oxide unit volume standard
- FIG. 2 illustrates a cross-sectional view of a metal oxide thin film transistor employing a bottom gate BCE structure in accordance with an embodiment of the present disclosure
- FIG. 3 illustrates a cross-sectional view of a metal oxide thin film transistor employing a bottom gate ESL structure in accordance with an embodiment of the present disclosure
- FIG. 4 illustrates a cross-sectional view of a metal oxide thin film transistor employing a top gate structure in accordance with an embodiment of the present disclosure
- FIG. 5 illustrates a flow chart of a method of fabricating a metal oxide thin film transistor of a bottom gate BCE structure in accordance with an embodiment of the present disclosure
- FIGS 6(a)-(c) illustrate schematic diagrams of some of the steps in the method illustrated in Figure 5, respectively.
- the thin film transistor includes a gate electrode 1, a gate insulating layer 2, an active layer 3, a source 4 and a drain 5 on a substrate, and a passivation layer 7 over the device.
- the gate insulating layer 2 is disposed between the gate electrode 1 and the active layer 3
- the source electrode 4 and the drain electrode 5 are disposed above the active layer 3
- the active layer 3 may be composed of a metal oxide or, in particular, a metal Nitrogen oxides form.
- the thin film transistor further includes an oxygen defect gettering layer 6 including an oxygen defect gettering material disposed between the active layer 3 and the source 4 and the drain 5, wherein the unit volume standard of the oxide of the oxygen defective gettering material is generated
- the Booth free energy is greater than the metal oxide in the active layer 3. Therefore, the oxygen-depleted gettering layer 6 having a strong oxygen gettering ability can absorb the weak oxygen dangling bonds and the oxygen-deficient state in the metal oxide active layer 3, thereby effectively increasing the mobility of the thin film transistor.
- oxygen-depleted gettering layer 6 is shown in FIG. 2 between the active layer 3 and the source 4 and the drain 5, as will be appreciated and appreciated by those skilled in the art, The oxygen-depletion gettering layer 6 may also be disposed only between the source 4 and the active layer 3 or only between the drain 5 and the active layer 3.
- the thickness of the oxygen-depleted gettering layer 6 can be from 100 to And the oxygen-depleted gettering material may be selected from the group consisting of Hf, Ti, Be, Al, Si, and Ca. In practice, those skilled in the art can design and implement oxygen defects having different thicknesses and materials according to the thickness of the oxygen-depleted gettering layer 6 and the thickness of the active layer 3, the concentration of materials and oxygen dangling bonds and oxygen-deficient states, and the like. Aspirate layer 6.
- the metal oxide in the active layer 3 may be selected from oxides or oxynitrides including Zn, In, Sn, and Ga.
- the source 4 and the drain 5 may be made of metal Mo.
- FIG. 3 illustrates a cross-sectional view of a metal oxide thin film transistor employing a bottom gate ESL structure in accordance with an embodiment of the present disclosure.
- the structure in FIG. 3 is substantially similar to the structure in FIG. 2 except that the thin film transistor further includes an etch stop layer (ESL) 8, and the etch stop layer 8 is disposed between the source 4 and the drain 5.
- ESL etch stop layer
- Both Fig. 2 and Fig. 3 employ a bottom gate type structure. Since the metal gate and the gate insulating layer of the thin film transistor of the bottom gate type structure can serve as an optical protective layer as a semiconductor layer, the light emitted from the backlight is prevented from being irradiated to the photogenerated carriers generated by the semiconductor layer to destroy the semiconductor layer. Electrical special Therefore, the performance of the thin film transistor of the bottom gate type structure is relatively stable.
- FIG. 4 illustrates a cross-sectional view of a metal oxide thin film transistor employing a top gate structure in accordance with an embodiment of the present disclosure.
- the structure in FIG. 4 is different from the structure in FIG. 2 in that in FIG. 4, the active layer 3 is disposed on a substrate on which a source 4 and a drain 5 are disposed, and a gate insulating layer 2 is located at the source 4 Above the drain 5, and the gate 1 is disposed on a side of the gate insulating layer 2 facing away from the source 4 and the drain 5.
- an oxygen-depleted gettering layer 6 is disposed between the active layer 3 and the source 4 and the drain 5, and the oxygen-depleted gettering layer 6 may be disposed only between the active layer 3 and the source 4 as needed. Or it is only arranged between the active layer 3 and the drain 5.
- the thin film transistor of the top gate type structure used in FIG. 4 has the advantages of simple manufacturing process, small number of required lithography plates, and low cost.
- FIG. 5 illustrates a flow chart of a method of fabricating a metal oxide thin film transistor of a bottom gate BCE structure
- FIGS. 6(a)-(c) illustrate the method illustrated in FIG. 5, respectively, according to an embodiment of the present disclosure.
- step 502 Various film forming processes known in the art, such as sputtering, chemical vapor deposition, and the like, may be employed in step 502, and patterning processes known in the art, including photolithography processes, etching processes, and the like, may be employed.
- an oxygen-depleted gettering layer 6 is formed on the active layer 3.
- a source/drain electrode layer is formed on the oxygen-depleted gettering layer 6.
- the oxygen-depleted gettering layer 6 and the source-drain electrode layer are formed of the same material. In this case, step 504 and step 506 can be performed simultaneously. Further, the oxygen-depleted gettering layer 6 may exist only between the active layer 3 and the source or between the active layer 3 and the drain.
- an annealing process is performed, as shown in Figure 6(b), where the arrows indicate the annealing direction.
- the annealing temperature is from 100 ° C to 350 ° C and the annealing time is from 30 to 90 minutes. In some cases, step 508 can be omitted.
- the source drain electrode layer and the oxygen defect gettering layer 6 are subjected to a patterning process, as shown in FIG. 6(c), wherein a patterning process known in the art, including photolithography, may be employed. Process, etching process, etc.
- step 512 a passivation layer 7 is formed over the device, resulting in a structure as shown in FIG. In some cases, step 512 can be omitted.
Abstract
Description
Claims (12)
- 一种金属氧化物薄膜晶体管,其中在有源层与源极之间、和/或在有源层与漏极之间存在包含氧缺陷吸除材料的氧缺陷吸除层,所述氧缺陷吸除材料的氧化物的单位体积标准生成吉布斯自由能大于有源层中的金属氧化物。
- 根据权利要求1的金属氧化物薄膜晶体管,其中所述氧缺陷吸除材料选自Hf、Ti、Be、Al、Si和Ca。
- 根据权利要求1的金属氧化物薄膜晶体管,其中所述氧缺陷吸除材料与源极、漏极材料相同。
- 根据权利要求1的金属氧化物薄膜晶体管,其中所述有源层中的金属氧化物选自Zn、In、Sn和Ga的氧化物。
- 根据权利要求1的金属氧化物薄膜晶体管,其中所述有源层中的金属氧化物包括金属氮氧化物。
- 一种显示基板,包括如权利要求1-6中任一项所述的金属氧化物薄膜晶体管。
- 一种显示装置,包括如权利要求7中所述的显示基板。
- 一种制备金属氧化物薄膜晶体管的方法,包括以下步骤:在基板上依次制作栅极层、栅极绝缘层和有源层,并且对每一层进行图案化工艺处理;在有源层上制作包含氧缺陷吸除材料的氧缺陷吸除层;制作源漏电极层;对源漏电极层和氧缺陷吸除层进行图案化工艺处理,其中,氧缺陷吸除层在有源层与源极之间、和/或在有源层与漏极之间,所述氧缺陷吸除材料的氧化物的单位体积标准生成吉布斯自由能大于有源层中的金属氧化物。
- 根据权利要求9的方法,还包括在制作源漏电极层之后的退火步骤。
- 根据权利要求10的方法,其中所述退火步骤的退火温度为100℃-350℃,退火时间为30-90分钟。
- 根据权利要求9的方法,还包括在结果得到的金属氧化物薄膜晶体管上方制作钝化层的步骤。
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CN107315033B (zh) * | 2016-04-26 | 2021-08-06 | 新唐科技日本株式会社 | 气体检测装置以及氢检测方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101257048A (zh) * | 2007-02-28 | 2008-09-03 | 三星电子株式会社 | 薄膜晶体管及其制造方法 |
CN101673770A (zh) * | 2008-09-09 | 2010-03-17 | 富士胶片株式会社 | 薄膜场效应晶体管和使用该薄膜场效应晶体管的显示器 |
CN102194692A (zh) * | 2010-03-04 | 2011-09-21 | 中国科学院微电子研究所 | 一种半导体器件的制造方法 |
US20130134412A1 (en) * | 2011-11-25 | 2013-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN103904125A (zh) * | 2012-12-26 | 2014-07-02 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管 |
CN104167446A (zh) * | 2014-07-14 | 2014-11-26 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板和显示装置 |
CN104779299A (zh) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | 金属氧化物薄膜晶体管及制备方法、显示基板和显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105428424A (zh) * | 2009-09-16 | 2016-03-23 | 株式会社半导体能源研究所 | 晶体管及显示设备 |
US9660092B2 (en) * | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
CN102709326B (zh) * | 2012-04-28 | 2018-04-17 | 北京京东方光电科技有限公司 | 薄膜晶体管及其制造方法、阵列基板和显示装置 |
CN104685635B (zh) * | 2012-10-01 | 2017-05-17 | 夏普株式会社 | 半导体装置 |
US9887291B2 (en) * | 2014-03-19 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module |
-
2015
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101257048A (zh) * | 2007-02-28 | 2008-09-03 | 三星电子株式会社 | 薄膜晶体管及其制造方法 |
CN101673770A (zh) * | 2008-09-09 | 2010-03-17 | 富士胶片株式会社 | 薄膜场效应晶体管和使用该薄膜场效应晶体管的显示器 |
CN102194692A (zh) * | 2010-03-04 | 2011-09-21 | 中国科学院微电子研究所 | 一种半导体器件的制造方法 |
US20130134412A1 (en) * | 2011-11-25 | 2013-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN103904125A (zh) * | 2012-12-26 | 2014-07-02 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管 |
CN104167446A (zh) * | 2014-07-14 | 2014-11-26 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板和显示装置 |
CN104779299A (zh) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | 金属氧化物薄膜晶体管及制备方法、显示基板和显示装置 |
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