CN106887438B - 阵列基板、其制作方法及显示装置 - Google Patents

阵列基板、其制作方法及显示装置 Download PDF

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CN106887438B
CN106887438B CN201710103356.1A CN201710103356A CN106887438B CN 106887438 B CN106887438 B CN 106887438B CN 201710103356 A CN201710103356 A CN 201710103356A CN 106887438 B CN106887438 B CN 106887438B
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insulating layer
substrate
layer
thin film
film transistor
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CN106887438A (zh
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谢蒂旎
张晓晋
李伟
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种阵列基板、其制作方法及显示装置，所述阵列基板包括衬底基板、依次位于所述衬底基板上的第一绝缘层和薄膜晶体管，所述第一绝缘层包括具有吸光作用的有色区域，所述有色区域在衬底基板上的正投影至少覆盖所述薄膜晶体管的有源层在衬底基板上的正投影区域。通过设置第一绝缘层的有色区域将外界光源中的短波段波长的光吸收掉，从而实现对有源层沟道的保护，保持器件性能稳定，延长使用寿命。

Description

阵列基板、其制作方法及显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板、其制作方法及显示装置。
背景技术
氧化物半导体材料因其载流子迁移率高、制备温度低、电学均匀性好、对可见光透明和成本低等优势，被认为是最适合驱动有机发光二极管(OLED)的薄膜晶体管(TFT)的半导体有源材料之一，目前氧化物TFT已广泛地应用在平板显示的阵列基板上，由于氧化物半导体对光照比较敏感，所以需要进行遮挡，避免环境光对TFT性能造成影响。尤其对于顶栅结构的TFT来说，因为其有源层位于比较靠下的层面，因此很容易受到来自于面板下方的外界光源的照射，从而导致器件性能劣化。
现有技术如图1所示，在顶栅结构的有源层104下方设置金属屏蔽层103，对有源层进行遮挡，从而避免外界光源的照射，使器件的性能保持稳定。但是这种方法有一定的局限性，由于金属屏蔽层和有源层并不是直接相邻的，二者中间存在着一定厚度的绝缘层，从而使得外界光源可以从侧面进入绝缘层从而照射到有源层。同时过大尺寸的金属屏蔽层会对TFT性能造成影响，例如可能导致阈值初始值漂移、均匀性下降等现象，因此金属屏蔽层的面积不能太大，只能略大于有源层的尺寸。同时，上述结构的氧化物半导体薄膜晶体管阵列基板，虽然可以利用金属屏蔽层从而导致上述低温多晶硅薄膜晶体管阵列基板在制备时产生制造流程比较繁多，成本比较高，耗时比较长等问题。
发明内容
本发明实施例提供的一种阵列基板、其制作方法及显示装置。
第一方面，本发明提供了一种阵列基板，包括衬底基板、依次位于所述衬底基板上的第一绝缘层和薄膜晶体管，所述第一绝缘层包括具有吸光作用的有色区域，所述有色区域在衬底基板上的正投影至少覆盖所述薄膜晶体管的有源层在衬底基板上的正投影区域。
所述第一绝缘层的有色区域可以吸收波长范围在200-500nm的可见光。
优选地，所述第一绝缘层的有色区域的材料包括氧化物、氮化物、氮氧化物或其中至少两种的混合与金属离子的掺杂物；
其中，所述氧化物、氮化物或者氮氧化物包括SiOx、SiOxNy、SiNx、Al2O3、AlOxNy、AlNx；
所述掺杂的金属离子包括Cu+、Au2+、Mn2+、Cd2+、Fe2+、Co3+、Cr3+、Fe3+或其中至少两种的混合。
所述金属离子掺杂比例为1-100％，优选20-60％。
优选地，所述薄膜晶体管为顶栅型薄膜晶体管，包括依次设置的有源层、栅绝缘层、栅极、第二绝缘层以及源漏电极层，所述源漏电极通过贯穿所述层间绝缘层的过孔与所述有源层电性连接。
第二方面，本发明提供一种显示装置，包括前面所述的阵列基板。
第三方面，本发明提供一种阵列基板的制作方法，包括在衬底基板上依次形成第一绝缘层和薄膜晶体管，还包括：
形成具有吸光作用的第一绝缘层有色区域，且所述有色区域在衬底基板上的正投影至少覆盖所述薄膜晶体管的有源层在衬底基板上的正投影。
所述第一绝缘层的有色区域的由氧化物、氮化物、氮氧化物或其中至少两种的混合掺杂金属离子形成。
附图说明
图1为现有的氧化物半导体TFT阵列基板的结构示意图；
图2为本发明实施例的氧化物半导体TFT阵列基板的结构示意图。
附图编号：
101-衬底基板 102-第一绝缘层 103-金属屏蔽层 104-有源层
105-栅绝缘层 106-栅极层 107-第二绝缘层 108-源漏电极层
109-钝化层 110-有色区域
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
附图中各部件的大小和形状不反映阵列基板的真实比例，目的只是示意说明本发明内容。
实施例一
本发明实施例提供的一种阵列基板，如图2所示，包括衬底基板101、依次位于所述衬底基板上的第一绝缘层102和薄膜晶体管，其中薄膜晶体管为顶栅型薄膜晶体管，包括依次设置的有源层104、栅绝缘层105、栅极106、第二绝缘层107以及源漏电极层108，所述源漏电极层108通过贯穿所述第二绝缘层107的过孔与所述有源层104电性连接。其中第一绝缘层102包括具有吸光作用的有色区域110，为了有效遮挡外界环境光对有源层的照射，所述有色区域在衬底基板上的正投影至少覆盖所述薄膜晶体管的有源层在衬底基板上的正投影区域，且优选设置在靠近有源层的位置，但沿第一绝缘层平面的覆盖范围不宜过大导致遮挡有效显示发光区域降低开口率。例如，如果该结构应用于顶发射有机电致发光显示器件结构，可以整个绝缘层均为有色；如果应用于底发射有机电致发光显示器件结构，则需遮挡除了显示发光区域以外的所有区域。
由于对氧化物半导体TFT电学性能造成影响的主要是短波长波段的光，有色区域优选吸收波长范围在200-500nm的可见光，即利用呈现红色或者黄色的绝缘层有色区域，吸收掉入射光源中短波长波段的光，剩下长波长的光由于能量较低，无法对有源层的性能造成影响。另外，考虑到绝缘层有色区域的透光度太低会影响阵列基板制作过程中的工艺情况观察，因此有色区域为半透明状态时为最佳。所述绝缘层的有色区域由氧化物、氮化物、氮氧化物或其中至少两种的混合与金属离子的掺杂物制成。
其中，所述氧化物、氮化物或者氮氧化物包括SiOx、SiOxNy、SiNx、Al2O3、AlOxNy、AlNx；掺杂的金属离子包括Cu+、Au2+、Mn2+、Cd2+、Fe2+、Co3+、Cr3+、Fe3+或其中至少两种的混合。所述金属离子掺杂比例为1-100％，优选20-60％，金属离子掺杂浓度越高，透明度越低。
可选地，衬底基板和所述薄膜晶体管的有源层之间仍可设置有金属屏蔽层104，金属屏蔽层和有色氧化物绝缘层两者同时采用，增强遮光效果。
实施例二
在本发明的另一个实施例中，提供了一种显示装置，该显示装置包括上述的阵列基板。如本领域技术人员所熟知的，上述阵列基板可以用于OLED显示，因此其可与不同的器件相结合形成OLED显示装置，当然，为了实现功能，阵列基板还可包括本发明中未提及的其他结构。
上述显示装置可以为：电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。本发明实施例所提供的显示装置与上述任意一种阵列基板具有相同的技术特征，因而可以解决相同的技术问题，达到相同的技术效果。
实施例三
本发明再一实施例提供一种阵列基板的制作方法，包括以下几个步骤：
(1)提供一衬底基板101，在衬底基板上沉积第一绝缘层102，并形成具有吸光作用的第一绝缘层有色区域110，所述第一绝缘层的有色区域110的由氧化物、氮化物、氮氧化物或其中至少两种的混合掺杂金属离子形成。
在具体实施时，可以采用等离子体增强化学气相沉积方法沉积第一绝缘层102，具体可以采用二氧化硅、氮化硅等材料。然后以离子注入方式对第一绝缘层102的目标区域进行掺杂，形成有色区域110。在离子注入时，可以通过设置掩膜板实现在指定区域进行离子注入，也可以通过在构图工艺中使用的光刻胶进行遮挡进行离子注入，使得有色区域110在衬底基板上的正投影至少覆盖所述薄膜晶体管的有源层在衬底基板上的正投影。
另外，也可以采用掺杂好的靶材直接溅射形成该绝缘层有色区域110，与现有技术类似，此处不再赘述。
其中，所述氧化物、氮化物或者氮氧化物包括SiOx、SiOxNy、SiNx、Al2O3、AlOxNy、AlNx；掺杂的金属离子包括Cu+、Au2+、Mn2+、Cd2+、Fe2+、Co3+、Cr3+、Fe3+或其中至少两种的混合。所述金属离子掺杂比例为1-100％，优选20-60％
(2)在第一绝缘层102上制作顶栅型薄膜晶体管，包括依次通过构图工艺形成的有源层104、栅绝缘层105、栅极106、第二绝缘层107以及源漏电极层108，其中源漏电极层108通过贯穿第二绝缘层107的过孔与有源层104电性连接。
(3)沉积钝化层109以及通过构图工艺形成贯穿该第二绝缘层107过孔，并在钝化层109上形成像素电极(图中未示出)的图形，像素电极通过过孔与薄膜晶体管的源极或漏极电性连接，并继续进行阵列基板后续膜层的制作，与现有技术类似，这里不做赘述。
需要说明的是，在本发明实施例提供的上述阵列基板的制作方法中，构图工艺可只包括光刻工艺，或，可以包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图形的工艺；光刻工艺是指包括成膜、曝光、显影等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。在具体实施时，可根据本发明中所形成的结构选择相应的构图工艺。
本发明实施例提供的一种阵列基板、其制作方法及显示装置，通过在氧化物半导体薄膜晶体管的有源层与衬底基板之间设置有色绝缘层，吸收外界光源中的短波段波长的光，从而更有效、全面地实现对氧化物半导体有源层沟道的保护，保持显示器件性能稳定，延长使用寿命，其制作工艺简单，易于实现。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种阵列基板，其特征在于，包括衬底基板、依次位于所述衬底基板上的金属屏蔽层、第一绝缘层和薄膜晶体管，所述薄膜晶体管的有源层靠近所述第一绝缘层设置，所述第一绝缘层包括具有吸光作用的有色区域，所述有色区域在衬底基板上的正投影，以及所述金属屏蔽层在所述衬底基板上的正投影均至少覆盖所述有源层在衬底基板上的正投影区域，所述有色区域为所述第一绝缘层中的部分区域。
2.如权利要求1所述的阵列基板，其特征在于，所述第一绝缘层的有色区域可以吸收波长范围在200-500nm的可见光。
3.如权利要求1所述的阵列基板，其特征在于，所述第一绝缘层的有色区域的材料包括氧化物、氮化物、氮氧化物或其中至少两种的混合与金属离子的掺杂物。
4.如权利要求3所述的阵列基板，其特征在于，其中，所述氧化物、氮化物或者氮氧化物包括SiOx、SiOxNy、SiNx、Al2O3、AlOxNy、AlNx；
所述掺杂的金属离子包括Cu+、Au2+、Mn2+、Cd2+、Fe2+、Co3+、Cr3+、Fe3+或其中至少两种的混合。
5.如权利要求3所述的阵列基板，其特征在于，所述金属离子掺杂比例为1-100％。
6.如权利要求5所述的阵列基板，其特征在于，所述金属离子掺杂比例为20-60％。
7.如权利要求1-6任一项所述的阵列基板，其特征在于，所述薄膜晶体管为顶栅型薄膜晶体管，包括依次设置的有源层、栅绝缘层、栅极、第二绝缘层以及源漏电极层，所述源漏电极层通过贯穿所述第二绝缘层的过孔与所述有源层电性连接。
8.一种显示装置，其特征在于，包括如权利要求1-7任一项所述的阵列基板。
9.一种阵列基板的制作方法，包括在衬底基板上依次形成金属屏蔽层、第一绝缘层和薄膜晶体管，其特征在于，所述金属屏蔽层在所述衬底基板上的正投影至少覆盖所述薄膜晶体管的有源层在衬底基板上的正投影，所述薄膜晶体管的有源层靠近所述第一绝缘层设置，所述第一绝缘层包括具有吸光作用的有色区域，且所述金属屏蔽层在衬底基板上的正投影，以及所述有色区域在衬底基板上的正投影均至少覆盖所述有源层在衬底基板上的正投影，所述有色区域为所述第一绝缘层中的部分区域。
10.如权利要求9所述的制作方法，其特征在于，所述第一绝缘层的有色区域的由氧化物、氮化物、氮氧化物或其中至少两种的混合掺杂金属离子形成。
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