JP6469959B2 - 薄膜トランジスタ表示板およびその製造方法 - Google Patents
薄膜トランジスタ表示板およびその製造方法 Download PDFInfo
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- JP6469959B2 JP6469959B2 JP2014061211A JP2014061211A JP6469959B2 JP 6469959 B2 JP6469959 B2 JP 6469959B2 JP 2014061211 A JP2014061211 A JP 2014061211A JP 2014061211 A JP2014061211 A JP 2014061211A JP 6469959 B2 JP6469959 B2 JP 6469959B2
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- 239000010409 thin film Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000010408 film Substances 0.000 claims description 110
- 239000004065 semiconductor Substances 0.000 claims description 80
- 238000005530 etching Methods 0.000 claims description 57
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 53
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 31
- 229910052733 gallium Inorganic materials 0.000 claims description 31
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 29
- 229910001887 tin oxide Inorganic materials 0.000 claims description 29
- 239000011787 zinc oxide Substances 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 25
- 229910006854 SnOx Inorganic materials 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 95
- 230000000903 blocking effect Effects 0.000 description 25
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 229910052738 indium Inorganic materials 0.000 description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 229910006404 SnO 2 Inorganic materials 0.000 description 8
- 239000011572 manganese Substances 0.000 description 8
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910007717 ZnSnO Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- -1 region Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- SOQBSQLGTKQSGQ-UHFFFAOYSA-N oxo(oxostannanylidene)tin Chemical compound O=[Sn]=[Sn]=O SOQBSQLGTKQSGQ-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Description
Claims (8)
- 絶縁基板の上に配置されているゲート電極と、
前記絶縁基板の上に配設され、前記ゲート電極と重なり合う酸化物半導体と、
前記ゲート電極と前記酸化物半導体との間に配設されるゲート絶縁膜と、
前記酸化物半導体と重なり合うソース電極およびドレイン電極と、
少なくとも前記酸化物半導体と前記ソース電極およびドレイン電極との間に配設されるバッファ層と、
を備え、
前記バッファ層は、錫を含むドーピング物質を含み、
前記バッファ層内の前記ドーピング物質の質量百分率は0%よりも大きく且つ20%以下であり、
前記バッファ層の周縁部は、前記ソース電極およびドレイン電極の周縁部と比較してアンダーカットされておらず、
前記ソース電極およびドレイン電極は、銅を含み、
前記バッファ層は、錫(Sn)または酸化錫(SnOx;X=1〜2)がドーピングされたガリウム亜鉛酸化物である、薄膜トランジスタ表示板。 - 前記ソース電極およびドレイン電極は、前記酸化物半導体と隣り合う第1表面とその反対の第2表面を有し、
前記バッファ層は、
前記ソース電極およびドレイン電極の前記第1表面と前記酸化物半導体との間に配設される第1バッファ層と、
前記ソース電極およびドレイン電極の前記第2表面の上に配設される第2バッファ層と、
を備える、請求項1に記載の薄膜トランジスタ表示板。 - 前記酸化物半導体層は、GIZOを含む、請求項1または2に記載の薄膜トランジスタ表示板。
- 前記ソース電極およびドレイン電極は、下部膜と上部膜を備え、
前記下部膜は、銅を含み、前記上部膜は、銅およびマンガンを含む、請求項1〜3のいずれかに記載の薄膜トランジスタ表示板。 - 請求項1〜4のいずれかに記載の薄膜トランジスタ表示板を製造する方法であって、
ゲート絶縁膜の上に、酸化物半導体膜を形成する段階と、
この酸化物半導体の膜の上に、前記バッファ層のためのガリウム亜鉛酸化物膜を形成する段階と、
前記バッファ層のための膜の上に、前記ソース電極およびドレイン電極のための金属膜を形成する段階と、
この金属膜の上に、感光膜パターンを形成する段階と、
この感光膜パターンをマスクとして、第1エッチング液を用いて、前記酸化物半導体膜、前記ガリウム亜鉛酸化物膜、及び前記金属膜をパターニングする第1パターニング段階と、
前記感光膜パターンのうち、前記ソース電極と前記ドレイン電極との間のチャネル部分に相当する箇所を除去するエッチバック段階と、
このエッチバック段階の後に、第2エッチング液を用いて、前記チャネル部分にて前記金属膜を除去する第2パターニング段階と
を含む、薄膜トランジスタ表示板の製造方法。 - 前記第1エッチング液は、フッ酸化水素とフッ化アンモニウムを含む、請求項5に記載の薄膜トランジスタ表示板の製造方法。
- 前記第2エッチング液は、5−アミノテトラゾールを含む、請求項5または6に記載の薄膜トランジスタ表示板の製造方法。
- 前記感光膜パターンを形成する段階は、半透明領域を有する露光マスクを用いて露光することを含む、請求項5〜7のいずれかに記載の薄膜トランジスタ表示板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2013-0033871 | 2013-03-28 | ||
KR1020130033871A KR102123529B1 (ko) | 2013-03-28 | 2013-03-28 | 박막 트랜지스터 표시판 및 그 제조 방법 |
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JP2014195074A JP2014195074A (ja) | 2014-10-09 |
JP6469959B2 true JP6469959B2 (ja) | 2019-02-13 |
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Country Status (4)
Country | Link |
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US (1) | US9159839B2 (ja) |
JP (1) | JP6469959B2 (ja) |
KR (1) | KR102123529B1 (ja) |
CN (1) | CN104078468B (ja) |
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KR102172972B1 (ko) * | 2014-02-26 | 2020-11-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
US11293088B2 (en) * | 2015-12-07 | 2022-04-05 | Lg Chem, Ltd. | Conductive structure, method for manufacturing same, and electrode comprising conductive structure |
US9576984B1 (en) * | 2016-01-14 | 2017-02-21 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor array panel and conducting structure |
US10333004B2 (en) * | 2016-03-18 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module and electronic device |
KR102424445B1 (ko) * | 2016-05-03 | 2022-07-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
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JP5708910B2 (ja) | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2012094853A (ja) * | 2010-09-30 | 2012-05-17 | Kobe Steel Ltd | 配線構造 |
KR20120042029A (ko) * | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조 방법 |
KR20120138074A (ko) * | 2011-06-14 | 2012-12-24 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법 |
KR101934977B1 (ko) * | 2011-08-02 | 2019-03-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US8878176B2 (en) * | 2011-08-11 | 2014-11-04 | The Hong Kong University Of Science And Technology | Metal-oxide based thin-film transistors with fluorinated active layer |
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US20140291665A1 (en) | 2014-10-02 |
US9159839B2 (en) | 2015-10-13 |
KR102123529B1 (ko) | 2020-06-17 |
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