JP5698059B2 - 基板処理装置、及び、太陽電池の製造方法 - Google Patents

基板処理装置、及び、太陽電池の製造方法 Download PDF

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Publication number
JP5698059B2
JP5698059B2 JP2011086641A JP2011086641A JP5698059B2 JP 5698059 B2 JP5698059 B2 JP 5698059B2 JP 2011086641 A JP2011086641 A JP 2011086641A JP 2011086641 A JP2011086641 A JP 2011086641A JP 5698059 B2 JP5698059 B2 JP 5698059B2
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JP
Japan
Prior art keywords
substrate
processing chamber
gas
side direction
substrates
Prior art date
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Active
Application number
JP2011086641A
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English (en)
Japanese (ja)
Other versions
JP2012222156A (ja
JP2012222156A5 (enExample
Inventor
西谷　英輔
英輔 西谷
国井　泰夫
泰夫 国井
豊田　一行
一行 豊田
吉田　秀成
秀成 吉田
石坂　光範
光範 石坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2011086641A priority Critical patent/JP5698059B2/ja
Priority to KR1020120026070A priority patent/KR101379748B1/ko
Priority to US13/427,304 priority patent/US20120258018A1/en
Priority to TW101110715A priority patent/TW201246439A/zh
Priority to CN2012101048140A priority patent/CN102738262A/zh
Publication of JP2012222156A publication Critical patent/JP2012222156A/ja
Publication of JP2012222156A5 publication Critical patent/JP2012222156A5/ja
Application granted granted Critical
Publication of JP5698059B2 publication Critical patent/JP5698059B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011086641A 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法 Active JP5698059B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011086641A JP5698059B2 (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法
KR1020120026070A KR101379748B1 (ko) 2011-04-08 2012-03-14 기판 처리 장치 및 반송 장치
US13/427,304 US20120258018A1 (en) 2011-04-08 2012-03-22 Substrate processing apparatus, and transport device
TW101110715A TW201246439A (en) 2011-04-08 2012-03-28 Substrate processing apparatus, and transport device
CN2012101048140A CN102738262A (zh) 2011-04-08 2012-04-06 衬底处理装置及搬运装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011086641A JP5698059B2 (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Publications (3)

Publication Number Publication Date
JP2012222156A JP2012222156A (ja) 2012-11-12
JP2012222156A5 JP2012222156A5 (enExample) 2014-05-15
JP5698059B2 true JP5698059B2 (ja) 2015-04-08

Family

ID=46966268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011086641A Active JP5698059B2 (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Country Status (5)

Country Link
US (1) US20120258018A1 (enExample)
JP (1) JP5698059B2 (enExample)
KR (1) KR101379748B1 (enExample)
CN (1) CN102738262A (enExample)
TW (1) TW201246439A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120097792A (ko) * 2011-02-25 2012-09-05 삼성전자주식회사 퍼니스와 이를 이용한 박막 형성 방법
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
JPWO2013099894A1 (ja) * 2011-12-28 2015-05-07 株式会社日立国際電気 基板処理装置及びそれを用いた基板処理方法
CN105556651B (zh) * 2013-09-10 2018-09-25 泰拉半导体株式会社 热处理装置以及具备该热处理装置的热处理系统
JP6316920B1 (ja) * 2016-12-07 2018-04-25 國家中山科學研究院 ガラス基板のセレン化及び硫化工程に用いる設備
CN107146828B (zh) * 2017-05-12 2019-12-03 北京金晟阳光科技有限公司 均匀高效退火的太阳电池辐照退火炉
WO2019138702A1 (ja) * 2018-01-12 2019-07-18 株式会社アルバック 真空装置
CN108615794B (zh) * 2018-06-28 2024-04-16 东方日升(安徽)新能源有限公司 一种用于太阳能硅片的电注入机的操作方法
JP7362940B2 (ja) * 2020-09-30 2023-10-17 株式会社Kokusai Electric 基板処理装置、温度制御プログラム、半導体装置の製造方法及び温度制御方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1769520A1 (de) * 1968-06-05 1972-03-02 Siemens Ag Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke
JPS59154017A (ja) * 1983-02-22 1984-09-03 Mitsubishi Electric Corp 半導体ウエハの加熱炉用パドル
JPH0648678B2 (ja) * 1986-07-30 1994-06-22 日本電気株式会社 ウエ−ハ熱処理装置
JPS63105327U (enExample) * 1986-12-25 1988-07-08
JP3012521B2 (ja) * 1996-05-30 2000-02-21 山形日本電気株式会社 ウェハ搬出入装置
JPH11311484A (ja) * 1998-04-30 1999-11-09 Chugai Ro Co Ltd 炉内雰囲気循環型ローラハース式連続焼成炉
WO2004027849A1 (ja) * 2002-09-20 2004-04-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
JP4645448B2 (ja) * 2003-05-02 2011-03-09 株式会社Ｉｈｉ 真空成膜装置及び真空成膜方法並びに太陽電池材料
JP4131965B2 (ja) * 2004-12-28 2008-08-13 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
JP2006300435A (ja) * 2005-04-22 2006-11-02 Chugai Ro Co Ltd 循環式焼成炉
ES2581378T3 (es) * 2008-06-20 2016-09-05 Volker Probst Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados
AU2009319350B2 (en) * 2008-11-28 2015-10-29 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates

Also Published As

Publication number Publication date
KR101379748B1 (ko) 2014-04-02
CN102738262A (zh) 2012-10-17
TW201246439A (en) 2012-11-16
JP2012222156A (ja) 2012-11-12
KR20120115096A (ko) 2012-10-17
US20120258018A1 (en) 2012-10-11

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