KR101379748B1 - 기판 처리 장치 및 반송 장치 - Google Patents

기판 처리 장치 및 반송 장치 Download PDF

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KR101379748B1
KR101379748B1 KR1020120026070A KR20120026070A KR101379748B1 KR 101379748 B1 KR101379748 B1 KR 101379748B1 KR 1020120026070 A KR1020120026070 A KR 1020120026070A KR 20120026070 A KR20120026070 A KR 20120026070A KR 101379748 B1 KR101379748 B1 KR 101379748B1
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substrates
substrate
reaction tube
fan
containing gas
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KR20120115096A (ko
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에이스케 니시타니
야스오 쿠니이
카즈유키 토요다
히데나리 요시다
미츠노리 이시사카
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3311—Horizontal transfer of a batch of workpieces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020120026070A 2011-04-08 2012-03-14 기판 처리 장치 및 반송 장치 Active KR101379748B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-086641 2011-04-08
JP2011086641A JP5698059B2 (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Publications (2)

Publication Number Publication Date
KR20120115096A KR20120115096A (ko) 2012-10-17
KR101379748B1 true KR101379748B1 (ko) 2014-04-02

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KR1020120026070A Active KR101379748B1 (ko) 2011-04-08 2012-03-14 기판 처리 장치 및 반송 장치

Country Status (5)

Country Link
US (1) US20120258018A1 (enExample)
JP (1) JP5698059B2 (enExample)
KR (1) KR101379748B1 (enExample)
CN (1) CN102738262A (enExample)
TW (1) TW201246439A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120097792A (ko) * 2011-02-25 2012-09-05 삼성전자주식회사 퍼니스와 이를 이용한 박막 형성 방법
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
KR20140085584A (ko) * 2011-12-28 2014-07-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 그것을 이용한 기판 처리 방법
WO2015037748A1 (ko) * 2013-09-10 2015-03-19 주식회사 테라세미콘 열처리 장치 및 이를 구비한 열처리 시스템
JP6316920B1 (ja) * 2016-12-07 2018-04-25 國家中山科學研究院 ガラス基板のセレン化及び硫化工程に用いる設備
CN107146828B (zh) * 2017-05-12 2019-12-03 北京金晟阳光科技有限公司 均匀高效退火的太阳电池辐照退火炉
CN110366774B (zh) * 2018-01-12 2023-06-02 株式会社爱发科 真空装置
CN108615794B (zh) * 2018-06-28 2024-04-16 东方日升(安徽)新能源有限公司 一种用于太阳能硅片的电注入机的操作方法
WO2022070310A1 (ja) * 2020-09-30 2022-04-07 株式会社Kokusai Electric 基板処理装置、温度制御プログラム、半導体装置の製造方法及び温度制御方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648678B2 (ja) * 1986-07-30 1994-06-22 日本電気株式会社 ウエ−ハ熱処理装置
JPH09320973A (ja) * 1996-05-30 1997-12-12 Nec Yamagata Ltd ウェハ搬出入装置
WO2009153059A1 (de) 2008-06-20 2009-12-23 Volker Probst Prozessvorrichtung zum prozessieren von insbesondere gestapelten prozessgütern

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1769520A1 (de) * 1968-06-05 1972-03-02 Siemens Ag Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke
JPS59154017A (ja) * 1983-02-22 1984-09-03 Mitsubishi Electric Corp 半導体ウエハの加熱炉用パドル
JPS63105327U (enExample) * 1986-12-25 1988-07-08
JPH11311484A (ja) * 1998-04-30 1999-11-09 Chugai Ro Co Ltd 炉内雰囲気循環型ローラハース式連続焼成炉
JPWO2004027849A1 (ja) * 2002-09-20 2006-01-19 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
WO2004097913A1 (ja) * 2003-05-02 2004-11-11 Ishikawajima-Harima Heavy Industries Co., Ltd. 真空成膜装置及び真空成膜方法並びに太陽電池材料
JP4131965B2 (ja) * 2004-12-28 2008-08-13 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
JP2006300435A (ja) * 2005-04-22 2006-11-02 Chugai Ro Co Ltd 循環式焼成炉
AU2009319350B2 (en) * 2008-11-28 2015-10-29 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648678B2 (ja) * 1986-07-30 1994-06-22 日本電気株式会社 ウエ−ハ熱処理装置
JPH09320973A (ja) * 1996-05-30 1997-12-12 Nec Yamagata Ltd ウェハ搬出入装置
WO2009153059A1 (de) 2008-06-20 2009-12-23 Volker Probst Prozessvorrichtung zum prozessieren von insbesondere gestapelten prozessgütern
KR20110039535A (ko) * 2008-06-20 2011-04-19 볼커 프로브스트 특정 적층 처리 제품을 처리하기 위한 처리 장치

Also Published As

Publication number Publication date
CN102738262A (zh) 2012-10-17
KR20120115096A (ko) 2012-10-17
US20120258018A1 (en) 2012-10-11
JP2012222156A (ja) 2012-11-12
JP5698059B2 (ja) 2015-04-08
TW201246439A (en) 2012-11-16

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