JP5517372B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP5517372B2 JP5517372B2 JP2012533962A JP2012533962A JP5517372B2 JP 5517372 B2 JP5517372 B2 JP 5517372B2 JP 2012533962 A JP2012533962 A JP 2012533962A JP 2012533962 A JP2012533962 A JP 2012533962A JP 5517372 B2 JP5517372 B2 JP 5517372B2
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- Prior art keywords
- substrate
- chamber
- vacuum processing
- unload chamber
- vent gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 154
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000010408 film Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
11 基板ホルダー
12 ロードロック室
13 加熱室
14 真空成膜室
15 搬送室
16 アンロード室
17 ゲートバルブ
18 凹部
19 貫通孔
20 ローラー
21 シャフト
22 レール部材
23 整流板
24 導入口
25 庇部
26 送通孔
S 基板
Claims (3)
- 真空状態で基板を処理する真空処理室と、
該真空処理室で処理された基板を外部に搬出するためのアンロード室と、を備えた真空処理装置であって、
前記基板は、当該基板の外周部が基板ホルダーに支持された状態で前記真空処理室から前記アンロード室に搬送され、
前記アンロード室内には、ガス源から供給されるベントガスの流れを規制する整流板が、前記アンロード室内に搬送された基板の表面に対向して当該基板を覆うように設けられていると共に、
当該アンロード室内にベントガスを導入する導入口が、前記整流板の表面に対向して設けられ、
前記整流板が、前記基板の両面にそれぞれ対向して設けられており、前記導入口が、各整流板にそれぞれ対向して設けられていることを特徴とする真空処理装置。 - 真空状態で基板を処理する真空処理室と、
該真空処理室で処理された基板を外部に搬出するためのアンロード室と、を備えた真空処理装置であって、
前記基板は、当該基板の外周部が基板ホルダーに支持された状態で前記真空処理室から前記アンロード室に搬送され、
前記アンロード室内には、ガス源から供給されるベントガスの流れを規制する整流板が、前記アンロード室内に搬送された基板の表面に対向して当該基板を覆うように設けられていると共に、
当該アンロード室内にベントガスを導入する導入口が、前記整流板の表面に対向して設けられ、
前記整流板の外周部には、前記基板側に向かって傾斜する庇部が設けられていることを特徴とする真空処理装置。 - 前記基板ホルダーには、前記基板が複数枚保持されており、
前記整流板には、前記基板間に対向する位置に貫通孔が設けられていることを特徴とする請求項1又は2に記載の真空処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012533962A JP5517372B2 (ja) | 2010-09-17 | 2011-09-07 | 真空処理装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010210066 | 2010-09-17 | ||
JP2010210066 | 2010-09-17 | ||
JP2012533962A JP5517372B2 (ja) | 2010-09-17 | 2011-09-07 | 真空処理装置 |
PCT/JP2011/070369 WO2012036043A1 (ja) | 2010-09-17 | 2011-09-07 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012036043A1 JPWO2012036043A1 (ja) | 2014-02-03 |
JP5517372B2 true JP5517372B2 (ja) | 2014-06-11 |
Family
ID=45831510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012533962A Active JP5517372B2 (ja) | 2010-09-17 | 2011-09-07 | 真空処理装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5517372B2 (ja) |
KR (1) | KR101461350B1 (ja) |
CN (1) | CN103109363B (ja) |
TW (1) | TWI503868B (ja) |
WO (1) | WO2012036043A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6053117B2 (ja) * | 2012-09-12 | 2016-12-27 | 株式会社アルバック | 真空処理装置 |
WO2019138702A1 (ja) * | 2018-01-12 | 2019-07-18 | 株式会社アルバック | 真空装置 |
JP6515254B1 (ja) * | 2018-01-12 | 2019-05-15 | 株式会社アルバック | 真空装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158819A (ja) * | 2007-12-27 | 2009-07-16 | Mitsumi Electric Co Ltd | ロードロック室の大気開放方法、ロードロック装置及び半導体製造装置 |
JP2010118541A (ja) * | 2008-11-13 | 2010-05-27 | Sharp Corp | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08124993A (ja) * | 1994-10-27 | 1996-05-17 | Kokusai Electric Co Ltd | 半導体製造装置のロードロック室 |
JP4145905B2 (ja) * | 2005-08-01 | 2008-09-03 | セイコーエプソン株式会社 | 減圧乾燥装置 |
JP5329072B2 (ja) * | 2007-12-03 | 2013-10-30 | 東京エレクトロン株式会社 | 処理容器およびプラズマ処理装置 |
JP4956469B2 (ja) * | 2008-03-24 | 2012-06-20 | 株式会社ニューフレアテクノロジー | 半導体製造装置 |
-
2011
- 2011-09-07 KR KR1020137009672A patent/KR101461350B1/ko active IP Right Grant
- 2011-09-07 WO PCT/JP2011/070369 patent/WO2012036043A1/ja active Application Filing
- 2011-09-07 CN CN201180044372.9A patent/CN103109363B/zh active Active
- 2011-09-07 JP JP2012533962A patent/JP5517372B2/ja active Active
- 2011-09-16 TW TW100133461A patent/TWI503868B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158819A (ja) * | 2007-12-27 | 2009-07-16 | Mitsumi Electric Co Ltd | ロードロック室の大気開放方法、ロードロック装置及び半導体製造装置 |
JP2010118541A (ja) * | 2008-11-13 | 2010-05-27 | Sharp Corp | プラズマ処理装置およびプラズマ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103109363A (zh) | 2013-05-15 |
TWI503868B (zh) | 2015-10-11 |
KR101461350B1 (ko) | 2014-11-13 |
KR20130086224A (ko) | 2013-07-31 |
JPWO2012036043A1 (ja) | 2014-02-03 |
TW201246291A (en) | 2012-11-16 |
CN103109363B (zh) | 2015-11-25 |
WO2012036043A1 (ja) | 2012-03-22 |
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