WO2021218760A1 - 传送载板、真空镀膜设备及真空镀膜方法 - Google Patents

传送载板、真空镀膜设备及真空镀膜方法 Download PDF

Info

Publication number
WO2021218760A1
WO2021218760A1 PCT/CN2021/088895 CN2021088895W WO2021218760A1 WO 2021218760 A1 WO2021218760 A1 WO 2021218760A1 CN 2021088895 W CN2021088895 W CN 2021088895W WO 2021218760 A1 WO2021218760 A1 WO 2021218760A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
coated
transfer
carrier
reaction chamber
Prior art date
Application number
PCT/CN2021/088895
Other languages
English (en)
French (fr)
Inventor
周剑
曹新民
陈晨
孙健
施政辉
徐文涛
李王俊
王青松
Original Assignee
苏州迈正科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 苏州迈正科技有限公司 filed Critical 苏州迈正科技有限公司
Publication of WO2021218760A1 publication Critical patent/WO2021218760A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Definitions

  • the invention relates to the technical field of coating equipment, in particular to a conveying carrier, a vacuum coating equipment and a vacuum coating method.
  • Vacuum coating technology uses physical or chemical means to deposit a film with special properties on the surface of a substrate in a vacuum environment.
  • the substrate is a transparent glass substrate, ceramic substrate, metal sheet, semiconductor wafer, solar cell silicon wafer, etc., coating
  • the rear solid surface has many superior properties such as wear resistance, high temperature resistance, corrosion resistance, oxidation resistance, passivation, conductivity and insulation, which are superior to the solid material itself, which can improve product quality and extend product life. It has been used in aviation , Electronics, machinery, chemical, military and other fields.
  • in-line or cluster plasma coating equipment including multiple processing chambers is used for vacuum coating, which can continuously deposit different layers with different layer characteristics, and use specific gases and gas mixtures in each separate processing chamber. Plasma power process conditions.
  • the carrier that carries the substrate to be coated enters and exits multiple coating chambers together with the substrate.
  • the carrier and the substrate participate in the coating process, so there is inevitably a pair of carrier plates.
  • the traditional coating equipment can use a robot to transport the substrate into and out of the process chamber, and the robot exits the process chamber before coating.
  • the number of substrates transferred by the manipulator each time is small, which affects the output efficiency of substrate coating.
  • a conveying carrier board is used to convey a substrate to be coated, and the conveying carrier board includes:
  • a plurality of substrate carrying units are fixed on one side of the supporting frame, each of the substrate carrying units includes a substrate holder for carrying a substrate; there is a substrate holder between the substrate holder and the supporting frame Through the gap.
  • the transfer carrier When using the above-mentioned transfer carrier, first place several substrates to be coated on the substrate holders of the above-mentioned several substrate carrying units, and move the transfer carrier and the substrate into the process reaction chamber together. The plates are separated and removed from the transfer carrier, leaving the substrate in the process reaction chamber. After the coating is completed, the transfer carrier is moved into the process reaction chamber, and moved out of the process reaction chamber together with the coated substrate. Since the transfer carrier is located outside the process reaction chamber during the coating process, contamination of the transfer carrier can be avoided.
  • the transfer carrier of the present invention can transfer several substrates at the same time, which is beneficial to improve the output efficiency of substrate coating.
  • the direct contact between the substrate and the heating plate during the coating process is beneficial to increase the heating speed, and can also avoid the uneven electric field in the process reaction chamber, thereby further reducing the heating time and improving the quality and uniformity of the coating film.
  • the substrate holder includes a first surface away from the support frame, and the outer end of the substrate holder is recessed toward the first surface to form a card for accommodating the substrate. groove.
  • the substrate can be placed in the above-mentioned card slot, which is conducive to the stability of the substrate.
  • the first surface is a flat surface, and the cross-sectional shape of the groove parallel to the first surface is adapted to the outer contour of the substrate.
  • the card slot can position the substrate, which can make the substrate more stable.
  • the depth of the card slot is not less than 0.01 mm.
  • the substrate can be prevented from moving and moving out of the card slot during the transfer process.
  • the number of the substrate holders is four, and the four substrate holders are respectively used to carry the four corners of the substrate. In this way, the transfer carrier can be moved in both the horizontal and vertical directions.
  • the number of the substrate carrying units is 10-500.
  • substrate holders for supporting adjacent substrates are integrally formed. This is conducive to manufacturing.
  • a vacuum coating equipment includes the above-mentioned transfer carrier.
  • the transport carrier can transport several substrates at the same time, which is beneficial to improve the production efficiency of substrate coating.
  • the direct contact between the substrate and the heating plate during the coating process is beneficial to increase the heating speed, and can also avoid the uneven electric field in the process reaction chamber, thereby further reducing the heating time and improving the quality and uniformity of the coating film.
  • the vacuum coating equipment further includes:
  • the process reaction chamber is adjacent to the transfer chamber.
  • a heating plate for heating the substrate and a needle holder array for lifting the substrate are arranged inside the process reaction chamber.
  • the heating plate is relatively movable along the axial direction of the needle holder array;
  • the transmission mechanism is used to transmit the transmission carrier board.
  • the number of the transfer chamber is one, the number of the process reaction chamber is at least two, and at least two of the process reaction chambers are arranged around the transfer chamber; or
  • the number of the transfer chamber is at least two, the number of the process reaction chamber is at least two, and the transfer chamber and the process reaction chamber are arranged staggered along a straight line.
  • the pin holder array penetrates the heating plate in a direction perpendicular to the surface of the heating plate. In this way, the pin holder array can be set according to the size of the substrate to be transferred, and space can also be saved.
  • a vacuum coating method includes the following steps:
  • the transfer carrier plate loaded with the substrate to be coated is moved into the process reaction chamber, and then the substrate to be coated is separated from the transfer carrier plate, and then the transfer carrier plate is moved out of the process reaction chamber, and the substrate to be coated The coated substrate remains in the process reaction chamber;
  • the transfer carrier After coating the substrate to be coated, the transfer carrier is moved into the process reaction chamber, and the coated substrate is loaded on the substrate carrying unit of the transfer carrier and removed from the process reaction chamber together.
  • the above-mentioned vacuum coating method can transport several substrates at the same time, which is beneficial to improve the production efficiency of substrate coating.
  • the transfer carrier is located outside the process reaction chamber during the coating process, contamination of the transfer carrier can be avoided.
  • the operation of separating the substrate to be coated from the transfer carrier is as follows: the pin holder array is raised, and the substrate to be coated is lifted into the gap between the substrate holder and the support frame to realize the Separation of the coated substrate from the transfer carrier;
  • the method further includes the following steps: the pin holder array is lowered or the heating plate is raised until the substrate to be coated falls on the heating plate;
  • the heating plate is lowered or the pin holder array is raised to separate the heating plate from the coated substrate;
  • the operation of loading the coated substrate on the substrate holder of the transport carrier is as follows: the pin holder array is lowered until the coated substrate falls on the substrate carrier unit of the transport carrier.
  • FIG. 1 is a schematic plan view of a transmission carrier board according to an embodiment of the present invention
  • FIG. 2 is a first perspective schematic view of a transmission carrier board according to an embodiment of the present invention.
  • FIG. 3 is a second perspective schematic view of a transmission carrier board according to an embodiment of the present invention.
  • FIG. 4 is a partial enlarged schematic diagram of the transmission carrier board in FIG. 3;
  • FIG. 5 is a schematic diagram of a vacuum coating equipment according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the conveying carrier plate after being sent into the process reaction chamber during the film coating process of the vacuum evaporation equipment according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram of the substrate in the card slot of the transfer carrier board after the substrate is raised during the film coating process of the vacuum evaporation equipment according to an embodiment of the present invention
  • FIG. 8 is a schematic diagram of a vacuum evaporation device according to an embodiment of the present invention after the carrier plate is transported away from the process reaction chamber during the film coating process;
  • FIG. 9 is a schematic diagram of a vacuum evaporation device according to an embodiment of the present invention after the heating plate is raised to hold up the substrate during the film coating process;
  • FIG. 10 is a schematic diagram of the substrate after the needle holder array is lifted up after the film is coated by the vacuum evaporation equipment according to an embodiment of the present invention
  • FIG. 11 is a schematic diagram of another transport carrier entering the process reaction chamber during the coating process of the vacuum evaporation equipment according to an embodiment of the present invention.
  • FIG. 12 is a schematic diagram of the pin holder array falling behind during the coating process of the vacuum evaporation equipment according to an embodiment of the present invention
  • FIG. 13 is a schematic diagram after the transfer carrier in the process reaction chamber withdraws the coated substrate during the coating process of the vacuum evaporation equipment according to an embodiment of the present invention
  • FIG. 14 is a schematic diagram of the vacuum coating equipment according to the second embodiment of the present invention.
  • FIG. 15 is a schematic diagram of the vacuum coating equipment according to the third embodiment of the present invention.
  • FIG. 16 is a schematic diagram of the vacuum coating equipment according to the fourth embodiment of the present invention.
  • FIG. 17 is a schematic diagram of a vacuum coating equipment according to a fifth embodiment of the present invention.
  • Fig. 18 is a schematic diagram of a vacuum coating equipment according to a sixth embodiment of the present invention.
  • a transfer carrier 100 is used to transfer substrates to be coated.
  • the transfer carrier 100 includes a supporting frame 110 and a plurality of substrate carrying units 120.
  • the support frame 110 of this embodiment includes a number of vertical horizontal frames 111 and vertical frames 112.
  • the horizontal frames 111 and the vertical frames 112 are perpendicular to each other, and two adjacent horizontal frames 111 and two adjacent vertical frames 112 jointly enclose
  • the space for accommodating the substrate is beneficial to ensure the firmness of the support frame 110.
  • the number of horizontal frames 111 and vertical frames 112 is not limited to this embodiment, and more or fewer horizontal frames 111 or vertical frames 112 may be provided according to actual conditions.
  • each substrate carrying unit 120 includes a substrate holder 121 for carrying a substrate; a substrate holder 121 and the supporting frame 110 are provided with a substrate holder. The gap through which the piece passes.
  • a plurality of substrate carrying units 120 are arranged in rows and columns, so that a large number of substrates can be carried at one time.
  • the substrate carrying unit 120 of this embodiment can carry eight rows and six columns of substrates, for a total of forty-eight substrates.
  • the number of substrates that the transfer carrier 100 of the present invention can carry is not limited to this.
  • the number of substrate carrying units is 10 to 500.
  • the number of substrates that the substrate carrying unit can carry is 10 to 500.
  • the size of the substrate is 150 mm to 300 mm, and the number of substrate carrying units is 20 to 200.
  • the substrate holder 121 includes a first surface 122 away from the support frame 110, and the outer end of the substrate holder 121 is recessed toward the first surface 122 to form a card slot 123 for accommodating the substrate. .
  • the substrate can be placed in the above-mentioned card slot, which is conducive to the stability of the substrate.
  • the first surface 122 is a flat surface, and the cross-sectional shape of the slot 123 parallel to the first surface 122 is adapted to the outer contour of the substrate.
  • the card slot 123 can position the substrate, which can make the substrate more stable.
  • the depth of the card slot 123 is not less than 0.1 mm. In other words, the depth of the card slot 123 is greater than or equal to 0.01 mm.
  • the substrate When the substrate is located in the above-mentioned card slot 123, it can prevent the substrate from moving and moving out of the card slot 123 during the transfer process.
  • the number of substrate holders 121 is four, and the four substrate holders 121 are respectively used to carry the four corners of the substrate.
  • the transfer carrier 100 can be moved in the horizontal direction or the longitudinal direction, which broadens the use range of the transfer carrier 100.
  • the form and number of the substrate holder 121 are not limited to this.
  • the number of substrate holders 121 may also be three, which are respectively used to carry the three corners of the substrate, so that the stability of the substrate can also be ensured.
  • substrate holders 121 for supporting adjacent substrates are integrally formed. This is conducive to manufacturing.
  • the plurality of substrate holders 121 for supporting adjacent substrates may also be non-integrally formed. In this case, the plurality of substrate holders 121 are separately formed.
  • transfer carrier of the present invention is not limited to the above-mentioned embodiment.
  • the transfer carrier When using the above-mentioned transfer carrier, first place several substrates to be coated on the substrate holders of the above-mentioned several substrate carrying units, and move the transfer carrier and the substrate into the process reaction chamber together. The plates are separated and removed from the transfer carrier, leaving the substrate in the process reaction chamber. After the coating is completed, the transfer carrier is moved into the process reaction chamber, and moved out of the process reaction chamber together with the coated substrate. Since the transfer carrier is located outside the process reaction chamber during the coating process, it is possible to prevent the transfer carrier from contaminating the substrate and the process chamber. At the same time, the transfer carrier of the present invention can transfer several substrates at the same time, which is beneficial to improve the output efficiency of substrate coating. In addition, the direct contact between the substrate and the heating plate during the coating process is beneficial to increase the heating speed, and can also avoid the uneven electric field in the process reaction chamber, thereby further reducing the coating time and improving the quality and uniformity of the coating film.
  • the vacuum coating equipment 200 of the first embodiment includes a transfer carrier 300 according to another embodiment of the present invention.
  • the vacuum coating equipment 200 further includes a transfer chamber 210, a process reaction chamber 220, and a transmission mechanism (not shown).
  • the transfer cavity 210 is used for accommodating the transfer carrier board.
  • the transfer carrier can be moved from the transfer chamber 210 to the process reaction chamber 220 or from the process reaction chamber 220 to the transfer chamber 210.
  • the process reaction chamber 220 is adjacent to the transfer chamber 210.
  • the inside of the process reaction chamber 220 is provided with a heating plate 221 for heating the substrate and a pin holder array 222 for lifting the substrate.
  • the pin holder array 222 and the heating plate 221 can move relative to each other along the axis of the pin holder array 222.
  • the needle holder array 222 includes a plurality of needle holders arranged side by side, and the axial direction of the needle holder array 222 is the axial direction of the needle holder. During the relative movement, one of them can stay still, or both can move.
  • the heating plate 221 and the needle holder array 222 are respectively controlled to lift through two sets of lifting systems.
  • the transmission mechanism is used to transfer the carrier board.
  • the transmission mechanism may be any mechanism capable of transmitting and conveying the carrier board, such as a combination of a roller and a guide rail.
  • the vacuum coating equipment 200 of this embodiment further includes a loading chamber 230 on the leftmost side, an unloading chamber 240 on the rightmost side, and a gate valve 250 between the two chambers.
  • the gate valve 250 can be opened or closed as appropriate.
  • the number of transfer chambers is at least two
  • the number of process reaction chambers is at least two
  • the transfer chambers and the process reaction chambers are arranged staggered along a straight line.
  • the number of the transfer chamber 210 is three
  • the number of the process reaction chamber 220 is two
  • the transfer chamber 210 and the process reaction chamber 220 are alternately arranged along a straight line, as shown in FIG. 5.
  • the pin holder array 222 penetrates the heating plate 221 in a direction perpendicular to the surface of the heating plate 221. In this way, the pin holder array 222 can be arranged according to the size of the substrate to be transferred, and space can also be saved.
  • a transmission mechanism can be used to move the transfer carrier plate loaded with the substrate to be coated into the process reaction chamber.
  • the operation of separating the substrate to be coated from the transport carrier is as follows: the pin holder array is raised, and the substrate to be coated is lifted into the gap between the substrate holder and the support frame, so as to realize the substrate to be coated and the transport carrier. Separation of plates.
  • the transmission mechanism is then used to move the conveying carrier plate out of the process reaction chamber.
  • the pin holder array is lowered or the heating plate is raised until the substrate to be coated falls on the heating plate.
  • the following step is further included: the heating plate is lowered or the pin holder array is raised to separate the heating plate from the coated substrate.
  • the operation of loading the coated substrate on the substrate holder of the transport carrier is as follows: the pin holder array is lowered until the coated substrate falls on the substrate carrier unit of the transport carrier.
  • the transmission mechanism can be used to move the transfer carrier into the process reaction chamber.
  • the gate valve at the feeding end is closed, and the transfer chamber 210 is evacuated.
  • the transfer carrier 300 leaves the process reaction chamber 220, the needle holder array 222 supports the substrate 400, and the gate valve 250 is closed, as shown in FIG. 8.
  • the heating plate 221 rises to hold up the substrate 400, as shown in FIG. 9.
  • a plasma chemical vapor deposition reaction is performed in the process reaction chamber 220, and a film is plated on the substrate 400, that is, a film structure is formed on the surface of the substrate 400.
  • the coating process is completed, the heating plate 221 is lowered, and the pin holder array 222 lifts the coated substrate 400, as shown in FIG. 10.
  • the transfer carrier 500 loaded with the coated substrate 400 continues to move to the right to the transfer chamber 210 on the right, and the gate valve 250 is closed, as shown in FIG. 13.
  • the gate valve 250 between the rightmost transfer chamber 210 and the unloading chamber 240 is opened, and the transfer carrier 500 loaded with the coated substrate 400 is moved into the unloading chamber 240 together, and the coated substrate 400 Just unload it from the transport carrier 500.
  • the above-mentioned vacuum coating method can transport several substrates at the same time, which is beneficial to improve the production efficiency of substrate coating.
  • the transfer carrier is located outside the process reaction chamber during the coating process, contamination of the transfer carrier can be avoided.
  • the arrangement of the transfer chamber and the process reaction chamber is not limited to this. According to different vacuum coating equipment, the corresponding specific vacuum coating method is not limited to this.
  • the vacuum coating equipment 500 of the second embodiment of the present invention includes a first transfer chamber 510 with a loading function, a first process reaction chamber 521, a second transfer chamber 530, and a second process that are arranged in a straight line.
  • the vacuum coating equipment 600 of the third embodiment of the present invention includes a loading chamber 610, a first transfer chamber 621, a first process reaction chamber 631, a second process reaction chamber 632, and a second transfer chamber that are sequentially arranged in a straight line.
  • the vacuum coating equipment 700 of the fourth embodiment of the present invention includes a loading chamber 710, a first transfer chamber 721, a first process reaction chamber 731, a second transfer chamber 722, and a second process reaction that are arranged in a straight line.
  • the arrangement of the transfer chamber and the process reaction chamber is not limited to the linear arrangement in the foregoing embodiment.
  • the vacuum coating equipment 800 of the fifth embodiment of the present invention includes a loading chamber 810, a transfer chamber 820, a first process reaction chamber 831, a second process reaction chamber 832, a third process reaction chamber 833, and an unloading chamber 840.
  • the first process reaction chamber 831, the second process reaction chamber 832, and the third process reaction chamber 833 are arranged around the transfer chamber 820.
  • the first process reaction chamber 831 is located directly above the transfer chamber 820 in the figure
  • the second process reaction chamber 832 is located directly to the right of the transfer chamber 820 in the figure
  • the third process reaction chamber 833 is located directly above the transfer chamber 820 in the figure.
  • the transfer carrier 100 of the above-mentioned embodiment can be used to transfer the substrate, which can be directly transferred to the first process reaction chamber 831, the second process reaction chamber 832, and the third process reaction chamber 833 through the rollers in the horizontal and vertical directions. , The transfer carrier 100 does not need to be rotated in the transfer cavity 820.
  • the arrangement of the first process reaction chamber 831, the second process reaction chamber 832, and the third process reaction chamber 833 is not limited to this.
  • the number of transfer chambers is one, and the number of process reaction chambers can also be two, four, or more than four, and these process reaction chambers are arranged around the transfer chamber.
  • the vacuum coating equipment 900 includes a loading chamber 910, a transfer chamber 920, a first process reaction chamber 931, a second process reaction chamber 932, and an unloading chamber 940.
  • the first process reaction chamber 931 is located directly above the transfer chamber 920 in the figure
  • the second process reaction chamber 932 is located directly below the transfer chamber 920 in the figure.
  • the number and arrangement of the transfer chamber and the process reaction chamber are not limited, and they can be set according to actual conditions.
  • the transport carrier can transport several substrates at the same time, which is beneficial to improve the production efficiency of substrate coating.
  • the direct contact between the substrate and the heating plate during the coating process is beneficial to increase the heating speed, and can also avoid the uneven electric field in the process reaction chamber, thereby further reducing the heating time and improving the quality and uniformity of the film.

Abstract

本发明涉及一种传送载板、真空镀膜设备及真空镀膜方法。传送载板用于传送待镀膜的基片，传送载板包括：支撑框架；以及若干个基片承载单元，固定于支撑框架的一侧，每个基片承载单元包括用于承载基片的基片托；基片托与支撑框架之间具有供基片穿过的空隙。使用上述传送载板进行真空镀膜时，由于镀膜过程中传送载板位于工艺反应腔外，因此能够避免污染传送载板。同时，本发明的传送载板能够同时传送若干个基片，有利于提高基片镀膜产出效率。此外，还涉及一种包括上述传送载板的真空镀膜设备，以及一种真空镀膜方法。

Description

传送载板、真空镀膜设备及真空镀膜方法 技术领域
本发明涉及镀膜设备技术领域，特别是涉及一种传送载板、真空镀膜设备及真空镀膜方法。
背景技术
真空镀膜技术是利用物理或化学手段，于真空环境中，在基片表面沉积一层特殊性能的薄膜，基片为透明玻璃基板，陶瓷基板，金属片，半导体晶片，太阳能电池硅片等，镀膜后固体表面具有耐磨损、耐高温、耐腐蚀、抗氧化、钝化、导电和绝缘等许多优于固体材料本身的优越性能，达到提高产品质量、延长产品寿命等作用，并已应用于航空、电子、机械、化工、军事等领域。
通常使用包括多个加工室的直列式或团簇式等离子体镀膜设备进行真空镀膜，可以连续地沉积具有不同层特性的不同膜层，在各个单独的加工室中使用特定的气体和气体混合物以及等离子功率工艺条件。传统的直列式或团簇式镀膜设备在沉积过程中承载待镀膜基片的载板与基片一起进出多个镀膜腔，载板与基片共同参与镀膜过程，因而不可避免的存在载板对基片和工艺腔污染的问题。为避免载板污染，传统的镀膜设备可采用机械手传送基片进出工艺腔，镀膜前机械手退出工艺腔。然而，机械手每次传送基片的数目不多，影响基片镀膜产出效率。
发明内容
基于此，有必要针对如何避免污染载板、同时提高基片镀膜产出效率的问 题，提供一种传送载板、真空镀膜设备及真空镀膜方法。
一种传送载板，用于传送待镀膜的基片，所述传送载板包括：
支撑框架；以及
若干个基片承载单元，固定于所述支撑框架的一侧，每个所述基片承载单元包括用于承载基片的基片托；所述基片托与支撑框架之间具有供基片穿过的空隙。
使用上述传送载板时，先将若干个待镀膜的基片置于上述若干个基片承载单元的基片托上，传送载板与基片共同移入工艺反应腔，之后将基片与传送载板分离，并移出传送载板，将基片留在工艺反应腔内，完成镀膜之后传送载板移入工艺反应腔，并与镀膜后的基片共同移出工艺反应腔。由于镀膜过程中传送载板位于工艺反应腔外，因此能够避免污染传送载板。同时，本发明的传送载板能够同时传送若干个基片，有利于提高基片镀膜产出效率。此外，镀膜过程中基片与加热板直接接触，有利于提高加热速度，还能够避免工艺反应腔内电场不均匀，从而进一步减少加热时间，并提升镀膜膜层品质及均匀性。
在其中一个实施例中，所述基片托包括远离所述支撑框架的第一表面，所述基片托的外端部向所述第一表面的方向凹陷形成用于容置基片的卡槽。传送基片的过程中，可将基片置于上述卡槽，有利于传送基片的稳固性。
在其中一个实施例中，所述第一表面为平面，所述卡槽沿平行于所述第一表面的截面形状与基片的外轮廓相适配。此时，卡槽能够对基片进行定位，能够使基片更稳固。
在其中一个实施例中，所述卡槽的深度不小于0.01mm。当基片位于上述卡槽内时，能够避免传送过程中基片发生移动而移出卡槽。
在其中一个实施例中，每个所述基片承载单元中，所述基片托的个数为四 个，四个所述基片托分别用于承载基片的四个角部。这样能够使传送载板沿横向或者纵向均可移动。
在其中一个实施例中，所述基片承载单元的个数为10～500。
在其中一个实施例中，用于承载相邻基片的若干个基片托为一体成型。这样有利于制造。
一种真空镀膜设备，包括上述的传送载板。
采用本发明的真空镀膜设备，传送载板能够同时传送若干个基片，有利于提高基片镀膜产出效率。此外，镀膜过程中基片与加热板直接接触，有利于提高加热速度，还能够避免工艺反应腔内电场不均匀，从而进一步减少加热时间，并提升镀膜膜层品质及均匀性。
在其中一个实施例中，所述真空镀膜设备还包括：
转运腔，用于容纳所述传送载板；
工艺反应腔，与所述转运腔相邻，所述工艺反应腔的内部设置有用于对基片加热的加热板与用于顶起所述基片的针托阵列，所述针托阵列与所述加热板可沿所述针托阵列的轴向相对移动；以及
传动机构，用于传送所述传送载板。
在其中一个实施例中，所述转运腔的个数为一个，所述工艺反应腔的个数为至少两个，至少两个所述工艺反应腔围绕所述转运腔设置；或者
所述转运腔的个数为至少两个，所述工艺反应腔的个数为至少两个，所述转运腔与所述工艺反应腔沿直线错开排布。
在其中一个实施例中，所述针托阵列沿垂直于所述加热板表面的方向贯穿所述加热板。这样能够根据待传送基片的尺寸设置针托阵列，也能够节省空间。
一种真空镀膜方法，包括如下步骤：
将10个～500个待镀膜的基片同时装载于传送载板的基片承载单元上，每个所述基片承载单元承载一个待镀膜的基片；
将装载有待镀膜的基片的传送载板移入工艺反应腔，之后将所述待镀膜的基片与所述传送载板分离，之后将所述传送载板移出工艺反应腔，并将所述待镀膜的基片留在工艺反应腔；以及
在所述待镀膜的基片上镀膜，之后将所述传送载板移入工艺反应腔，将镀膜后的基片装载于所述传送载板的基片承载单元上，共同移出工艺反应腔。
上述真空镀膜方法，能够同时传送若干个基片，有利于提高基片镀膜产出效率。同时，由于镀膜过程中传送载板位于工艺反应腔外，因此能够避免污染传送载板。
在其中一个实施例中，将待镀膜的基片与传送载板分离的操作为：针托阵列升起，顶起待镀膜的基片至基片托与支撑框架之间的空隙内，实现待镀膜的基片与传送载板的分离；
在所述待镀膜的基片上镀膜之前，还包括以下步骤：针托阵列下降或者加热板升起，直至待镀膜的基片落在加热板上；
将所述传送载板移入工艺反应腔之前，还包括以下步骤：加热板下降或者针托阵列升起，以将加热板与镀膜后的基片分离；
将镀膜后的基片装载于所述传送载板的基片托上的操作为：针托阵列下降，直至镀膜后的基片落在传送载板的基片承载单元上。
附图说明
图1为本发明一实施方式的传送载板的平面示意图；
图2为本发明一实施方式的传送载板的第一立体示意图；
图3为本发明一实施方式的传送载板的第二立体示意图；
图4为图3中传送载板的局部放大示意图；
图5为本发明一实施方式的真空镀膜设备的示意图；
图6为本发明一实施方式的真空蒸镀设备镀膜过程中传送载板送入工艺反应腔后的示意图；
图7为本发明一实施方式的真空蒸镀设备镀膜过程中传送载板的卡槽内的基片升起后的示意图；
图8为本发明一实施方式的真空蒸镀设备镀膜过程中传送载板离开工艺反应腔后的示意图；
图9为本发明一实施方式的真空蒸镀设备镀膜过程中加热板上升托起基片后的示意图；
图10为本发明一实施方式的真空蒸镀设备镀膜后针托阵列顶起镀膜后的基片的示意图；
图11为本发明一实施方式的真空蒸镀设备镀膜过程中另一传送载板进入工艺反应腔的示意图；
图12为本发明一实施方式的真空蒸镀设备镀膜过程中针托阵列下落后的示意图；
图13为本发明一实施方式的真空蒸镀设备镀膜过程中工艺反应腔内传送载板将镀膜后的基片撤回后的示意图；
图14为本发明第二实施方式的真空镀膜设备的示意图；
图15为本发明第三实施方式的真空镀膜设备的示意图；
图16为本发明第四实施方式的真空镀膜设备的示意图；
图17为本发明第五实施方式的真空镀膜设备的示意图；
图18为本发明第六实施方式的真空镀膜设备的示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
需要说明的是，当元件被称为“固定于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
请参见图1～图4，本发明一实施方式的传送载板100用于传送待镀膜的基片，传送载板100包括支撑框架110与若干个基片承载单元120。
其中，本实施方式的支撑框架110包括若干个垂直的横框111和纵框112，横框111和纵框112相互垂直，相邻两条横框111与相邻两条纵框112共同围成用于容纳基片的空间，这样有利于保证支撑框架110的牢固性。当然，横框111和纵框112的条数不限于本实施方式，还可以根据实际情况设置更多或者更少 的横框111或者纵框112。
其中，若干个基片承载单元120固定于支撑框架110的一侧，每个基片承载单元120包括用于承载基片的基片托121；基片托121与支撑框架110之间具有供基片穿过的空隙。
本实施方式中，若干个基片承载单元120按照成行成列的方式排布，这样能够一次性承载较多的基片。具体的，本实施方式的基片承载单元120可以承载八行六列基片，合计为四十八个基片。
当然，本发明的传送载板100能够承载基片的个数不限于此。在前述实施方式的基础上，基片承载单元的个数为10～500。也就是说，基片承载单元能够承载基片的个数为10～500。更优的，基片的尺寸为150mm～300mm，基片承载单元的个数为20～200。
在前述实施方式的基础上，基片托121包括远离支撑框架110的第一表面122，基片托121的外端部向第一表面122的方向凹陷形成用于容置基片的卡槽123。传送基片的过程中，可将基片置于上述卡槽，有利于传送基片的稳固性。
在前述实施方式的基础上，第一表面122为平面，卡槽123沿平行于第一表面122的截面形状与基片的外轮廓相适配。此时，卡槽123能够对基片进行定位，能够使基片更稳固。
在前述实施方式的基础上，卡槽123的深度不小于用于0.1mm。也就是说，卡槽123的深度大于或者等于0.01mm。当基片位于上述卡槽123内时，能够避免传送过程中基片发生移动而移出卡槽123。
在前述实施方式的基础上，每个基片承载单元120中，基片托121的个数为四个，四个基片托121分别用于承载基片的四个角部。这样能够使传送载板100沿横向或者纵向均可移动，拓宽了传送载板100的使用范围。
当然，基片托121的形式和个数不限于此。在其他实施方式中，基片托121还可以为三个，分别用于承载基片的三个角部，这样也能够保证承载基片的稳固性。
在前述实施方式的基础上，用于承载相邻基片的若干个基片托121为一体成型。这样有利于制造。当然，用于承载相邻基片的若干个基片托121亦可以为非一体成型，此时，若干个基片托121单独成型。
此外需要说明的是，本发明的传送载板不限于上述实施方式。
使用上述传送载板时，先将若干个待镀膜的基片置于上述若干个基片承载单元的基片托上，传送载板与基片共同移入工艺反应腔，之后将基片与传送载板分离，并移出传送载板，将基片留在工艺反应腔内，完成镀膜之后传送载板移入工艺反应腔，并与镀膜后的基片共同移出工艺反应腔。由于镀膜过程中传送载板位于工艺反应腔外，因此能够避免传送载板污染基片和工艺腔体。同时，本发明的传送载板能够同时传送若干个基片，有利于提高基片镀膜产出效率。此外，镀膜过程中基片与加热板直接接触，有利于提高加热速度，还能够避免工艺反应腔内电场不均匀，从而进一步减少镀膜时间，提升了镀膜膜层品质及均匀性。
请参见图5，第一实施方式的真空镀膜设备200包括本发明另一实施方式的传送载板300。
在前述实施方式的基础上，真空镀膜设备200还包括转运腔210、工艺反应腔220与传动机构(未图示)。
其中，转运腔210用于容纳传送载板。传送载板可从转运腔210移动至工艺反应腔220，或者从工艺反应腔220移动至转运腔210。
其中，工艺反应腔220与转运腔210相邻。工艺反应腔220的内部设置有 用于对基片加热的加热板221与用于顶起基片的针托阵列222，针托阵列222与加热板221可沿针托阵列222的轴向相对移动。其中，针托阵列222包括若干个并列设置的针托，针托阵列222的轴向即针托的轴向。在相对移动的过程中，其中一个可以保持不动，亦或者二者都运动。加热板221和针托阵列222分别通过两套升降系统控制升降。
其中，传动机构用于传送传送载板。传动机构可以为任意能够起到传送传送载板作用的机构，例如滚轮与导轨的组合。
本实施方式的真空镀膜设备200还包括位于最左侧的装载腔230、位于最右侧的卸载腔240以及位于两两腔之间的门阀250。门阀250可视情况进行打开或者关闭。
在前述实施方式的基础上，转运腔的个数为至少两个，工艺反应腔的个数为至少两个，转运腔与工艺反应腔沿直线错开排布。
在上述实施方式中，转运腔210的个数为三个，工艺反应腔220的个数为两个，且转运腔210与工艺反应腔220沿直线交替设置，如图5所示。
在前述实施方式的基础上，针托阵列222沿垂直于加热板221表面的方向贯穿加热板221。这样能够根据待传送基片的尺寸设置针托阵列222，也能够节省空间。
一实施方式的真空镀膜方法，包括如下步骤：
S10、将10个～500个待镀膜的基片同时装载于传送载板的基片承载单元上，每个基片承载单元承载一个待镀膜的基片。
S20、将装载有待镀膜的基片的传送载板移入工艺反应腔，之后将待镀膜的基片与传送载板分离，之后将传送载板移出工艺反应腔，并将待镀膜的基片留在工艺反应腔。
可以利用传动机构将装载有待镀膜的基片的传送载板移入工艺反应腔。
将待镀膜的基片与传送载板分离的操作为：针托阵列升起，顶起待镀膜的基片至基片托与支撑框架之间的空隙内，实现待镀膜的基片与传送载板的分离。
之后利用传动机构将传送载板移出工艺反应腔。
S30、在待镀膜的基片上镀膜，之后将传送载板移入工艺反应腔，将镀膜后的基片装载于传送载板的基片承载单元上，共同移出工艺反应腔。
优选地，在待镀膜的基片上镀膜之前，还包括以下步骤：针托阵列下降或者加热板升起，直至待镀膜的基片落在加热板上。
优选地，将传送载板移入工艺反应腔之前，还包括以下步骤：加热板下降或者针托阵列升起，以将加热板与镀膜后的基片分离。
优选地，将镀膜后的基片装载于传送载板的基片托上的操作为：针托阵列下降，直至镀膜后的基片落在传送载板的基片承载单元上。
可以利用传动机构将传送载板移入工艺反应腔。
以上述实施方式的真空蒸镀设备200为例，对本发明的真空镀膜方法进行进一步的说明。采用上述实施方式的真空蒸镀设备200进行镀膜的过程如下：
1、将若干个待镀膜的基片400装载于传送载板300的基片托上，上料端门阀打开，装有待镀膜的基片400的传送载板300从装载腔230移入转运腔210。
2、上料端门阀关闭，转运腔210抽真空。
3、转运腔210与相邻的工艺反应腔220之间的门阀250打开，将装载有待镀膜的基片400的传送载板300移入相邻的工艺反应腔220，如图6所示。
4、工艺反应腔220内嵌入在加热板221中的针托阵列222升起，传送载板300的卡槽内的基片400升起，如图7所示。
5、传送载板300离开工艺反应腔220，针托阵列222支撑基片400，门阀 250关闭，如图8所示。
6、加热板221上升托起基片400，如图9所示。
7、根据设定工艺参数，在工艺反应腔220内进行等离子体化学气相沉积反应，在基片400上镀膜，即在基片400的表面形成膜层结构。
8、镀膜工艺完成，加热板221下降，针托阵列222顶起镀膜后的基片400，如图10所示。
9、工艺反应腔220与位于其右侧的转运腔210之间的门阀250打开，另一传送载板500从该转运腔210中传送至位于其左侧的工艺反应腔220，如图11所示。之后针托阵列222下落，镀膜后的基片400完全落在传送载板500的卡槽内，如图12所示。
10、装载有镀膜后的基片400的传送载板500继续向右移动至右侧的转运腔210，门阀250关闭，如图13所示。
11、转运腔210与位于其右侧的工艺反应腔220之间的门阀250打开，装载有镀膜后的基片400的传送载板500共同移入该工艺反应腔220，之后重复步骤3-10直至镀膜完成。
12、镀膜完成后，最右侧的转运腔210与卸载腔240之间的门阀250打开，装载有镀膜后的基片400的传送载板500共同移入卸载腔240，将镀膜后的基片400从传送载板500上卸载即可。
上述真空镀膜方法，能够同时传送若干个基片，有利于提高基片镀膜产出效率。同时，由于镀膜过程中传送载板位于工艺反应腔外，因此能够避免污染传送载板。
需要说明的是，本发明的真空镀膜设备中，转运腔与工艺反应腔的设置不限于此。根据不同的真空镀膜设备，其对应的具体的真空镀膜方法也不限于此。
请参见图14，本发明第二实施方式的真空镀膜设备500包括呈直线依次排布的带有装载功能的第一转运腔510、第一工艺反应腔521、第二转运腔530、第二工艺反应腔522与卸载腔540。
请参见图15，本发明第三实施方式的真空镀膜设备600包括呈直线依次排布的装载腔610、第一转运腔621、第一工艺反应腔631、第二工艺反应腔632、第二转运腔622、第三工艺反应腔633与卸载腔640。
请参见图16，本发明第四实施方式的真空镀膜设备700包括呈直线依次排布的装载腔710、第一转运腔721、第一工艺反应腔731、第二转运腔722、第二工艺反应腔732、第三转运腔723、第三工艺反应腔733与卸载腔740。
需要说明的是，本发明的真空镀膜设备中，转运腔与工艺反应腔的排布方式不限于上述实施方式中的沿直线依次排布。
请参见图17，本发明第五实施方式的真空镀膜设备800包括装载腔810、转运腔820、第一工艺反应腔831、第二工艺反应腔832、第三工艺反应腔833与卸载腔840。其中，第一工艺反应腔831、第二工艺反应腔832与第三工艺反应腔833围绕转运腔820设置。具体的，第一工艺反应腔831位于图中转运腔820的正上方，第二工艺反应腔832位于图中转运腔820的正右方，第三工艺反应腔833位于图中转运腔820的正下方。因此，可以采用上述实施方式的传送载板100进行传送基片，可直接通过横方向和纵方向的滚轮传送至第一工艺反应腔831、第二工艺反应腔832与第三工艺反应腔833内，传送载板100在转运腔820内可以不用旋转。
当然，第一工艺反应腔831、第二工艺反应腔832与第三工艺反应腔833的排布方式不限于此。此外，在其他实施方式中，转运腔的个数为一个，工艺反应腔的个数还可以为两个、四个或者四个以上，这些工艺反应腔围绕转运腔设 置。
请参见图18，本发明第六实施方式的真空镀膜设备900包括装载腔910、转运腔920、第一工艺反应腔931、第二工艺反应腔932与卸载腔940。其中，第一工艺反应腔931位于图中转运腔920的正上方，第二工艺反应腔932位于图中转运腔920的正下方。
此外需要说的是，本发明的真空镀膜设备中，转运腔与工艺反应腔的个数与排布方式不限，还可以根据实际情况进行设置。
采用本发明的真空镀膜设备，传送载板能够同时传送若干个基片，有利于提高基片镀膜产出效率。此外，镀膜过程中基片与加热板直接接触，有利于提高加热速度，还能够避免工艺反应腔内电场不均匀，从而进一步减少加热时间，以及提高膜层品质及均匀性。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (13)

  1. 一种传送载板，用于传送待镀膜的基片，其特征在于，所述传送载板包括：
    支撑框架；以及
    若干个基片承载单元，固定于所述支撑框架的一侧，每个所述基片承载单元包括用于承载基片的基片托；所述基片托与支撑框架之间具有供基片穿过的空隙。
  2. 根据权利要求1所述的传送载板，其特征在于，所述基片托包括远离所述支撑框架的第一表面，所述基片托的外端部向所述第一表面的方向凹陷形成用于容置基片的卡槽。
  3. 根据权利要求2所述的传送载板，其特征在于，所述第一表面为平面，所述卡槽沿平行于所述第一表面的截面形状与基片的外轮廓相适配。
  4. 根据权利要求2所述的传送载板，其特征在于，所述卡槽的深度不小于0.01mm。
  5. 根据权利要求1所述的传送载板，其特征在于，每个所述基片承载单元中，所述基片托的个数为四个，四个所述基片托分别用于承载基片的四个角部。
  6. 根据权利要求1所述的传送载板，其特征在于，所述基片承载单元的个数为10～500。
  7. 根据权利要求1～6中任一项所述的传送载板，其特征在于，用于承载相邻基片的若干个基片托为一体成型。
  8. 一种真空镀膜设备，其特征在于，包括权利要求1～7中任一项所述的传送载板。
  9. 根据权利要求8所述的真空镀膜设备，其特征在于，所述真空镀膜设备还包括：
    转运腔，用于容纳所述传送载板；
    工艺反应腔，与所述转运腔相邻，所述工艺反应腔的内部设置有用于对基片加热的加热板与用于顶起所述基片的针托阵列，所述针托阵列与所述加热板可沿所述针托阵列的轴向相对移动；以及
    传动机构，用于传送所述传送载板。
  10. 根据权利要求9所述的真空镀膜设备，其特征在于，所述转运腔的个数为一个，所述工艺反应腔的个数为至少两个，至少两个所述工艺反应腔围绕所述转运腔设置；或者
    所述转运腔的个数为至少两个，所述工艺反应腔的个数为至少两个，所述转运腔与所述工艺反应腔沿直线错开排布。
  11. 根据权利要求9所述的真空镀膜设备，其特征在于，所述针托阵列沿垂直于所述加热板表面的方向贯穿所述加热板。
  12. 一种真空镀膜方法，其特征在于，包括如下步骤：
    将10个～500个待镀膜的基片同时装载于传送载板的基片承载单元上，每个所述基片承载单元承载一个待镀膜的基片；
    将装载有待镀膜的基片的传送载板移入工艺反应腔，之后将所述待镀膜的基片与所述传送载板分离，之后将所述传送载板移出工艺反应腔，并将所述待镀膜的基片留在工艺反应腔；以及
    在所述待镀膜的基片上镀膜，之后将所述传送载板移入工艺反应腔，将镀膜后的基片装载于所述传送载板的基片承载单元上，共同移出工艺反应腔。
  13. 根据权利要求12所述的真空镀膜方法，其特征在于，将待镀膜的基片与传送载板分离的操作为：针托阵列升起，顶起待镀膜的基片至基片托与支撑框架之间的空隙内，实现待镀膜的基片与传送载板的分离；
    在所述待镀膜的基片上镀膜之前，还包括以下步骤：针托阵列下降或者加 热板升起，直至待镀膜的基片落在加热板上；
    将所述传送载板移入工艺反应腔之前，还包括以下步骤：加热板下降或者针托阵列升起，以将加热板与镀膜后的基片分离；
    将镀膜后的基片装载于所述传送载板的基片托上的操作为：针托阵列下降，直至镀膜后的基片落在传送载板的基片承载单元上。
PCT/CN2021/088895 2020-04-30 2021-04-22 传送载板、真空镀膜设备及真空镀膜方法 WO2021218760A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010368432.3A CN111471965A (zh) 2020-04-30 2020-04-30 传送载板、真空镀膜设备及真空镀膜方法
CN202010368432.3 2020-04-30

Publications (1)

Publication Number Publication Date
WO2021218760A1 true WO2021218760A1 (zh) 2021-11-04

Family

ID=71757440

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/088895 WO2021218760A1 (zh) 2020-04-30 2021-04-22 传送载板、真空镀膜设备及真空镀膜方法

Country Status (2)

Country Link
CN (1) CN111471965A (zh)
WO (1) WO2021218760A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114807910A (zh) * 2022-06-09 2022-07-29 广东思泉新材料股份有限公司 在线真空镀膜生产线

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111471965A (zh) * 2020-04-30 2020-07-31 苏州迈正科技有限公司 传送载板、真空镀膜设备及真空镀膜方法
CN116623143B (zh) * 2023-07-24 2023-11-10 等离子体装备科技(广州)有限公司 挂架收发系统及连续镀膜生产线

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03141634A (ja) * 1989-10-26 1991-06-17 Fujitsu Ltd 分子線結晶成長装置
JP2009206131A (ja) * 2008-02-26 2009-09-10 Panasonic Corp 半導体装置の製造方法および装置
CN101538703A (zh) * 2008-03-21 2009-09-23 东捷科技股份有限公司 玻璃基板移载装置
CN206742216U (zh) * 2017-03-28 2017-12-12 雷仲礼 基板传送装置及包含该基板传送装置的基板处理系统
CN111471965A (zh) * 2020-04-30 2020-07-31 苏州迈正科技有限公司 传送载板、真空镀膜设备及真空镀膜方法
CN212270220U (zh) * 2020-04-30 2021-01-01 苏州迈正科技有限公司 传送载板及真空镀膜设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983113B2 (ja) * 2002-06-20 2007-09-26 Ｔｄｋ株式会社 円板状基板用成膜装置に対する基板の受け渡し方法、基板受け渡しシステム、および当該方法を用いたディスク状記録媒体の製造方法
KR100898975B1 (ko) * 2005-08-01 2009-05-25 주식회사 에이디피엔지니어링 플라즈마 처리방법
CN101640181A (zh) * 2008-07-31 2010-02-03 佳能安内华股份有限公司 基底对准设备和基底处理设备
TWI417984B (zh) * 2009-12-10 2013-12-01 Orbotech Lt Solar Llc 自動排序之多方向性直線型處理裝置
KR101728392B1 (ko) * 2010-03-18 2017-04-19 주성엔지니어링(주) 공정 챔버, 이를 포함하는 반도체 제조 장치 및 기판 처리 방법
CN201924076U (zh) * 2010-12-29 2011-08-10 四川虹欧显示器件有限公司 一种玻璃基板支撑系统
DE102011050324A1 (de) * 2011-05-12 2012-11-29 Roth & Rau Ag Substrattransportmodul, Belade- und Entladesystem und Transportverfahren für Substrate in einer Substratbearbeitungsanlage
CN103924191A (zh) * 2013-01-15 2014-07-16 上海北玻玻璃技术工业有限公司 在基片上镀制ito薄膜的方法
KR102146740B1 (ko) * 2013-05-22 2020-08-21 세메스 주식회사 기판이송장치 및 기판이송장치 제어방법
CN104630713B (zh) * 2013-11-12 2017-05-10 江苏豪迈照明科技有限公司 连线装置及应用其的oled生产线
CN106811738A (zh) * 2015-12-02 2017-06-09 钧石(中国)能源有限公司 一种太阳能电池的镀膜方法及载板
CN205845988U (zh) * 2016-07-26 2016-12-28 苏州阿特斯阳光电力科技有限公司 一种用于pecvd上下料单晶硅片的定位装置
CN108642478A (zh) * 2018-07-13 2018-10-12 君泰创新（北京）科技有限公司 一种镀膜系统及镀膜工艺
CN108774731A (zh) * 2018-07-31 2018-11-09 湖南玉丰真空科学技术有限公司 一种真空镀膜机真空室基片架升降机构
CN110952079A (zh) * 2018-09-26 2020-04-03 东泰高科装备科技有限公司 搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03141634A (ja) * 1989-10-26 1991-06-17 Fujitsu Ltd 分子線結晶成長装置
JP2009206131A (ja) * 2008-02-26 2009-09-10 Panasonic Corp 半導体装置の製造方法および装置
CN101538703A (zh) * 2008-03-21 2009-09-23 东捷科技股份有限公司 玻璃基板移载装置
CN206742216U (zh) * 2017-03-28 2017-12-12 雷仲礼 基板传送装置及包含该基板传送装置的基板处理系统
CN111471965A (zh) * 2020-04-30 2020-07-31 苏州迈正科技有限公司 传送载板、真空镀膜设备及真空镀膜方法
CN212270220U (zh) * 2020-04-30 2021-01-01 苏州迈正科技有限公司 传送载板及真空镀膜设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114807910A (zh) * 2022-06-09 2022-07-29 广东思泉新材料股份有限公司 在线真空镀膜生产线
CN114807910B (zh) * 2022-06-09 2023-09-01 广东思泉新材料股份有限公司 在线真空镀膜生产线

Also Published As

Publication number Publication date
CN111471965A (zh) 2020-07-31

Similar Documents

Publication Publication Date Title
WO2021218760A1 (zh) 传送载板、真空镀膜设备及真空镀膜方法
TWI518832B (zh) 真空處理系統架構
KR101369282B1 (ko) 고생산성 박막 증착 방법 및 시스템
US10854497B2 (en) Apparatus and method of selective turning over a row of substrates in an array of substrates in a processing system
US20140060434A1 (en) Gas injector for high volume, low cost system for epitaxial silicon depositon
US20170244006A1 (en) Parallel plate inline substrate processing tool
US20150270150A1 (en) Boat
KR101760667B1 (ko) 고생산성 박막증착이 가능한 원자층 증착 시스템
CN110735125A (zh) 用于制造异质结太阳能电池的pecvd设备及镀膜方法
KR102033694B1 (ko) 기판 처리 시스템
KR20140069715A (ko) 대면적 원자층 증착 장치
KR101157192B1 (ko) 배치식 기판 처리 장치
KR200486487Y1 (ko) 기판 프로세싱 시스템을 위한 인덱싱되는 가스 제트 주입기
CN212270220U (zh) 传送载板及真空镀膜设备
KR101321331B1 (ko) 태양전지용 박막 증착 시스템
TWI673815B (zh) 基板處理系統、基板傳送裝置和傳送方法
JP3649898B2 (ja) プラズマｃｖｄ装置を用いた多層薄膜形成装置
CN214115717U (zh) 镀膜设备
KR20110059227A (ko) 트레이 및 이를 사용하는 기판처리장치
KR101167989B1 (ko) 기판 처리 장치
JP2015137415A (ja) 大面積原子層蒸着装置
CN211339683U (zh) 用于制造异质结太阳能电池的pecvd设备及成套pecvd设备
WO2022152020A1 (zh) 承托装置、等离子体增强化学气相沉积设备及其使用方法
JP2018040029A (ja) 成膜装置及び成膜方法並びに太陽電池の製造方法
JPH08260149A (ja) 減圧表面処理装置及び太陽電池製作装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21795782

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21795782

Country of ref document: EP

Kind code of ref document: A1