CN102738262A - 衬底处理装置及搬运装置 - Google Patents

衬底处理装置及搬运装置 Download PDF

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Publication number
CN102738262A
CN102738262A CN2012101048140A CN201210104814A CN102738262A CN 102738262 A CN102738262 A CN 102738262A CN 2012101048140 A CN2012101048140 A CN 2012101048140A CN 201210104814 A CN201210104814 A CN 201210104814A CN 102738262 A CN102738262 A CN 102738262A
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CN
China
Prior art keywords
gas
substrates
reaction tube
lining processor
processing chamber
Prior art date
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Pending
Application number
CN2012101048140A
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English (en)
Chinese (zh)
Inventor
西谷英辅
国井泰夫
丰田一行
吉田秀成
石坂光范
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Publication of CN102738262A publication Critical patent/CN102738262A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN2012101048140A 2011-04-08 2012-04-06 衬底处理装置及搬运装置 Pending CN102738262A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-086641 2011-04-08
JP2011086641A JP5698059B2 (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Publications (1)

Publication Number Publication Date
CN102738262A true CN102738262A (zh) 2012-10-17

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ID=46966268

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012101048140A Pending CN102738262A (zh) 2011-04-08 2012-04-06 衬底处理装置及搬运装置

Country Status (5)

Country Link
US (1) US20120258018A1 (enExample)
JP (1) JP5698059B2 (enExample)
KR (1) KR101379748B1 (enExample)
CN (1) CN102738262A (enExample)
TW (1) TW201246439A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104160480A (zh) * 2011-12-28 2014-11-19 株式会社日立国际电气 衬底处理装置及使用该装置的衬底处理方法
CN107146828A (zh) * 2017-05-12 2017-09-08 北京金晟阳光科技有限公司 均匀高效退火的太阳电池辐照退火炉
CN110366774A (zh) * 2018-01-12 2019-10-22 株式会社爱发科 真空装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120097792A (ko) * 2011-02-25 2012-09-05 삼성전자주식회사 퍼니스와 이를 이용한 박막 형성 방법
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
CN105556651B (zh) * 2013-09-10 2018-09-25 泰拉半导体株式会社 热处理装置以及具备该热处理装置的热处理系统
JP6316920B1 (ja) * 2016-12-07 2018-04-25 國家中山科學研究院 ガラス基板のセレン化及び硫化工程に用いる設備
CN108615794B (zh) * 2018-06-28 2024-04-16 东方日升(安徽)新能源有限公司 一种用于太阳能硅片的电注入机的操作方法
CN116157902A (zh) * 2020-09-30 2023-05-23 株式会社国际电气 基板处理装置、温度控制程序、半导体器件的制造方法以及温度控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648678B2 (ja) * 1986-07-30 1994-06-22 日本電気株式会社 ウエ−ハ熱処理装置
JPH09320973A (ja) * 1996-05-30 1997-12-12 Nec Yamagata Ltd ウェハ搬出入装置
JPH11311484A (ja) * 1998-04-30 1999-11-09 Chugai Ro Co Ltd 炉内雰囲気循環型ローラハース式連続焼成炉
CN101095240A (zh) * 2004-12-28 2007-12-26 昭和砚壳石油株式会社 用于形成cis型薄膜太阳能电池的光吸收层的方法
WO2009153059A1 (de) * 2008-06-20 2009-12-23 Volker Probst Prozessvorrichtung zum prozessieren von insbesondere gestapelten prozessgütern

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1769520A1 (de) * 1968-06-05 1972-03-02 Siemens Ag Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke
JPS59154017A (ja) * 1983-02-22 1984-09-03 Mitsubishi Electric Corp 半導体ウエハの加熱炉用パドル
JPS63105327U (enExample) * 1986-12-25 1988-07-08
JPWO2004027849A1 (ja) * 2002-09-20 2006-01-19 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP4645448B2 (ja) * 2003-05-02 2011-03-09 株式会社Ｉｈｉ 真空成膜装置及び真空成膜方法並びに太陽電池材料
JP2006300435A (ja) * 2005-04-22 2006-11-02 Chugai Ro Co Ltd 循環式焼成炉
KR20110097908A (ko) * 2008-11-28 2011-08-31 볼커 프로브스트 반도체 층 또는 원소 셀레늄 및/또는 황으로 처리된 코팅 기판, 특히 평면 기판의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648678B2 (ja) * 1986-07-30 1994-06-22 日本電気株式会社 ウエ−ハ熱処理装置
JPH09320973A (ja) * 1996-05-30 1997-12-12 Nec Yamagata Ltd ウェハ搬出入装置
JPH11311484A (ja) * 1998-04-30 1999-11-09 Chugai Ro Co Ltd 炉内雰囲気循環型ローラハース式連続焼成炉
CN101095240A (zh) * 2004-12-28 2007-12-26 昭和砚壳石油株式会社 用于形成cis型薄膜太阳能电池的光吸收层的方法
WO2009153059A1 (de) * 2008-06-20 2009-12-23 Volker Probst Prozessvorrichtung zum prozessieren von insbesondere gestapelten prozessgütern

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104160480A (zh) * 2011-12-28 2014-11-19 株式会社日立国际电气 衬底处理装置及使用该装置的衬底处理方法
CN107146828A (zh) * 2017-05-12 2017-09-08 北京金晟阳光科技有限公司 均匀高效退火的太阳电池辐照退火炉
CN110366774A (zh) * 2018-01-12 2019-10-22 株式会社爱发科 真空装置
CN110366774B (zh) * 2018-01-12 2023-06-02 株式会社爱发科 真空装置

Also Published As

Publication number Publication date
JP2012222156A (ja) 2012-11-12
KR101379748B1 (ko) 2014-04-02
KR20120115096A (ko) 2012-10-17
JP5698059B2 (ja) 2015-04-08
TW201246439A (en) 2012-11-16
US20120258018A1 (en) 2012-10-11

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