TW201246439A - Substrate processing apparatus, and transport device - Google Patents

Substrate processing apparatus, and transport device Download PDF

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Publication number
TW201246439A
TW201246439A TW101110715A TW101110715A TW201246439A TW 201246439 A TW201246439 A TW 201246439A TW 101110715 A TW101110715 A TW 101110715A TW 101110715 A TW101110715 A TW 101110715A TW 201246439 A TW201246439 A TW 201246439A
Authority
TW
Taiwan
Prior art keywords
substrates
substrate
processing chamber
gas
processing apparatus
Prior art date
Application number
TW101110715A
Other languages
English (en)
Chinese (zh)
Inventor
Eisuke Nishitani
Yasuo Kunii
Kazuyuki Toyoda
Hidenari Yoshida
Mitsunori Ishisaka
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201246439A publication Critical patent/TW201246439A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW101110715A 2011-04-08 2012-03-28 Substrate processing apparatus, and transport device TW201246439A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011086641A JP5698059B2 (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Publications (1)

Publication Number Publication Date
TW201246439A true TW201246439A (en) 2012-11-16

Family

ID=46966268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110715A TW201246439A (en) 2011-04-08 2012-03-28 Substrate processing apparatus, and transport device

Country Status (5)

Country Link
US (1) US20120258018A1 (enExample)
JP (1) JP5698059B2 (enExample)
KR (1) KR101379748B1 (enExample)
CN (1) CN102738262A (enExample)
TW (1) TW201246439A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777677B (zh) * 2020-09-30 2022-09-11 日商國際電氣股份有限公司 基板處理裝置、溫度控制程式、半導體裝置之製造方法及溫度控制方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120097792A (ko) * 2011-02-25 2012-09-05 삼성전자주식회사 퍼니스와 이를 이용한 박막 형성 방법
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
JPWO2013099894A1 (ja) * 2011-12-28 2015-05-07 株式会社日立国際電気 基板処理装置及びそれを用いた基板処理方法
CN105556651B (zh) * 2013-09-10 2018-09-25 泰拉半导体株式会社 热处理装置以及具备该热处理装置的热处理系统
JP6316920B1 (ja) * 2016-12-07 2018-04-25 國家中山科學研究院 ガラス基板のセレン化及び硫化工程に用いる設備
CN107146828B (zh) * 2017-05-12 2019-12-03 北京金晟阳光科技有限公司 均匀高效退火的太阳电池辐照退火炉
WO2019138702A1 (ja) * 2018-01-12 2019-07-18 株式会社アルバック 真空装置
CN108615794B (zh) * 2018-06-28 2024-04-16 东方日升(安徽)新能源有限公司 一种用于太阳能硅片的电注入机的操作方法

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DE1769520A1 (de) * 1968-06-05 1972-03-02 Siemens Ag Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke
JPS59154017A (ja) * 1983-02-22 1984-09-03 Mitsubishi Electric Corp 半導体ウエハの加熱炉用パドル
JPH0648678B2 (ja) * 1986-07-30 1994-06-22 日本電気株式会社 ウエ−ハ熱処理装置
JPS63105327U (enExample) * 1986-12-25 1988-07-08
JP3012521B2 (ja) * 1996-05-30 2000-02-21 山形日本電気株式会社 ウェハ搬出入装置
JPH11311484A (ja) * 1998-04-30 1999-11-09 Chugai Ro Co Ltd 炉内雰囲気循環型ローラハース式連続焼成炉
WO2004027849A1 (ja) * 2002-09-20 2004-04-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
JP4645448B2 (ja) * 2003-05-02 2011-03-09 株式会社Ihi 真空成膜装置及び真空成膜方法並びに太陽電池材料
JP4131965B2 (ja) * 2004-12-28 2008-08-13 昭和シェル石油株式会社 Cis系薄膜太陽電池の光吸収層の作製方法
JP2006300435A (ja) * 2005-04-22 2006-11-02 Chugai Ro Co Ltd 循環式焼成炉
ES2581378T3 (es) * 2008-06-20 2016-09-05 Volker Probst Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados
AU2009319350B2 (en) * 2008-11-28 2015-10-29 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777677B (zh) * 2020-09-30 2022-09-11 日商國際電氣股份有限公司 基板處理裝置、溫度控制程式、半導體裝置之製造方法及溫度控制方法

Also Published As

Publication number Publication date
KR101379748B1 (ko) 2014-04-02
CN102738262A (zh) 2012-10-17
JP2012222156A (ja) 2012-11-12
JP5698059B2 (ja) 2015-04-08
KR20120115096A (ko) 2012-10-17
US20120258018A1 (en) 2012-10-11

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