TW201246439A - Substrate processing apparatus, and transport device - Google Patents
Substrate processing apparatus, and transport device Download PDFInfo
- Publication number
- TW201246439A TW201246439A TW101110715A TW101110715A TW201246439A TW 201246439 A TW201246439 A TW 201246439A TW 101110715 A TW101110715 A TW 101110715A TW 101110715 A TW101110715 A TW 101110715A TW 201246439 A TW201246439 A TW 201246439A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrates
- substrate
- processing chamber
- gas
- processing apparatus
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 161
- 239000011521 glass Substances 0.000 claims abstract description 93
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 9
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 7
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims abstract description 4
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000007769 metal material Substances 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- 239000011593 sulfur Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 238000004073 vulcanization Methods 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 210000000078 claw Anatomy 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 72
- 230000032258 transport Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 12
- 229910001220 stainless steel Inorganic materials 0.000 description 12
- 239000010935 stainless steel Substances 0.000 description 12
- 239000010949 copper Substances 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- 238000011282 treatment Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 150000003346 selenoethers Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 229910020781 SixOy Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010667 large scale reaction Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011086641A JP5698059B2 (ja) | 2011-04-08 | 2011-04-08 | 基板処理装置、及び、太陽電池の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201246439A true TW201246439A (en) | 2012-11-16 |
Family
ID=46966268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101110715A TW201246439A (en) | 2011-04-08 | 2012-03-28 | Substrate processing apparatus, and transport device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120258018A1 (enExample) |
| JP (1) | JP5698059B2 (enExample) |
| KR (1) | KR101379748B1 (enExample) |
| CN (1) | CN102738262A (enExample) |
| TW (1) | TW201246439A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI777677B (zh) * | 2020-09-30 | 2022-09-11 | 日商國際電氣股份有限公司 | 基板處理裝置、溫度控制程式、半導體裝置之製造方法及溫度控制方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120097792A (ko) * | 2011-02-25 | 2012-09-05 | 삼성전자주식회사 | 퍼니스와 이를 이용한 박막 형성 방법 |
| JP5741921B2 (ja) * | 2011-04-08 | 2015-07-01 | 株式会社日立国際電気 | 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法 |
| JPWO2013099894A1 (ja) * | 2011-12-28 | 2015-05-07 | 株式会社日立国際電気 | 基板処理装置及びそれを用いた基板処理方法 |
| CN105556651B (zh) * | 2013-09-10 | 2018-09-25 | 泰拉半导体株式会社 | 热处理装置以及具备该热处理装置的热处理系统 |
| JP6316920B1 (ja) * | 2016-12-07 | 2018-04-25 | 國家中山科學研究院 | ガラス基板のセレン化及び硫化工程に用いる設備 |
| CN107146828B (zh) * | 2017-05-12 | 2019-12-03 | 北京金晟阳光科技有限公司 | 均匀高效退火的太阳电池辐照退火炉 |
| WO2019138702A1 (ja) * | 2018-01-12 | 2019-07-18 | 株式会社アルバック | 真空装置 |
| CN108615794B (zh) * | 2018-06-28 | 2024-04-16 | 东方日升(安徽)新能源有限公司 | 一种用于太阳能硅片的电注入机的操作方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1769520A1 (de) * | 1968-06-05 | 1972-03-02 | Siemens Ag | Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke |
| JPS59154017A (ja) * | 1983-02-22 | 1984-09-03 | Mitsubishi Electric Corp | 半導体ウエハの加熱炉用パドル |
| JPH0648678B2 (ja) * | 1986-07-30 | 1994-06-22 | 日本電気株式会社 | ウエ−ハ熱処理装置 |
| JPS63105327U (enExample) * | 1986-12-25 | 1988-07-08 | ||
| JP3012521B2 (ja) * | 1996-05-30 | 2000-02-21 | 山形日本電気株式会社 | ウェハ搬出入装置 |
| JPH11311484A (ja) * | 1998-04-30 | 1999-11-09 | Chugai Ro Co Ltd | 炉内雰囲気循環型ローラハース式連続焼成炉 |
| WO2004027849A1 (ja) * | 2002-09-20 | 2004-04-01 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
| JP4645448B2 (ja) * | 2003-05-02 | 2011-03-09 | 株式会社Ihi | 真空成膜装置及び真空成膜方法並びに太陽電池材料 |
| JP4131965B2 (ja) * | 2004-12-28 | 2008-08-13 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の光吸収層の作製方法 |
| JP2006300435A (ja) * | 2005-04-22 | 2006-11-02 | Chugai Ro Co Ltd | 循環式焼成炉 |
| ES2581378T3 (es) * | 2008-06-20 | 2016-09-05 | Volker Probst | Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados |
| AU2009319350B2 (en) * | 2008-11-28 | 2015-10-29 | Volker Probst | Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates |
-
2011
- 2011-04-08 JP JP2011086641A patent/JP5698059B2/ja active Active
-
2012
- 2012-03-14 KR KR1020120026070A patent/KR101379748B1/ko active Active
- 2012-03-22 US US13/427,304 patent/US20120258018A1/en not_active Abandoned
- 2012-03-28 TW TW101110715A patent/TW201246439A/zh unknown
- 2012-04-06 CN CN2012101048140A patent/CN102738262A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI777677B (zh) * | 2020-09-30 | 2022-09-11 | 日商國際電氣股份有限公司 | 基板處理裝置、溫度控制程式、半導體裝置之製造方法及溫度控制方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101379748B1 (ko) | 2014-04-02 |
| CN102738262A (zh) | 2012-10-17 |
| JP2012222156A (ja) | 2012-11-12 |
| JP5698059B2 (ja) | 2015-04-08 |
| KR20120115096A (ko) | 2012-10-17 |
| US20120258018A1 (en) | 2012-10-11 |
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