JP5697449B2 - 透明電極付き基板および透明電極付き基板の製造方法 - Google Patents
透明電極付き基板および透明電極付き基板の製造方法 Download PDFInfo
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- JP5697449B2 JP5697449B2 JP2010527758A JP2010527758A JP5697449B2 JP 5697449 B2 JP5697449 B2 JP 5697449B2 JP 2010527758 A JP2010527758 A JP 2010527758A JP 2010527758 A JP2010527758 A JP 2010527758A JP 5697449 B2 JP5697449 B2 JP 5697449B2
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- 239000000758 substrate Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 101
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 239000011787 zinc oxide Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 32
- 235000012239 silicon dioxide Nutrition 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 22
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims description 17
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
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- 238000005477 sputtering target Methods 0.000 claims description 5
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- 239000001257 hydrogen Substances 0.000 description 9
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- 229910001195 gallium oxide Inorganic materials 0.000 description 8
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- 238000012360 testing method Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052810 boron oxide Inorganic materials 0.000 description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 4
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- 239000007789 gas Substances 0.000 description 4
- 239000007779 soft material Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
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- 229910052733 gallium Inorganic materials 0.000 description 3
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
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- 239000011970 polystyrene sulfonate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
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- -1 unsaturated alicyclic hydrocarbons Chemical class 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
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- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 238000003841 Raman measurement Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- 230000000740 bleeding effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
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- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Computer Hardware Design (AREA)
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- Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Non-Insulated Conductors (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Laminated Bodies (AREA)
Description
すなわち、推奨される透明電極付き基板の製造方法は、透明電極付き基板の製造方法であって、透明導電性酸化物層をマグネトロンスパッタリング法により製膜し、スパッタターゲットとして二酸化珪素を酸化亜鉛に対して0.8〜2.1重量%含む混合物を用い、スパッタリング製膜時に上記ターゲットに印加されるパワー密度を3.5W/cm2 以上とすることを特徴とする、透明電極付き基板の製造方法である。
Sa≦0.01×D+4.0
Sds≧−0.55×D+420
本発明の一態様における酸化亜鉛透明導電性酸化物層2は、二酸化珪素の含有量は酸化亜鉛に対して0.8〜2.1重量%含有していることが好ましい。二酸化珪素が果たす役割については明確でないが、二酸化珪素が、酸化亜鉛の結晶粒界付近に導電性を低下させない程度に偏在し、結晶粒界近傍に酸素や水が付着することで発生する電解によるキャリアの散乱を抑制していると推定される。本態様の酸化亜鉛透明導電性酸化物層は、実質的にアルミニウム、ガリウム、ホウ素、インジウム等の珪素以外のドーパントを含まないことが好ましい。
(ドーピング量)=(ドーピング剤の原子数)÷((ドーピング剤の原子数)+(亜鉛の原子数))×100。
酸化亜鉛透明導電性酸化物層には、導電性の付与や耐久性の向上を目的としてドーピングを施す。これらのドーピング剤にはガリウム・アルミニウム・ホウ素から1種類以上選択されるものを用いる。これらは、酸化ガリウム・酸化アルミニウム・酸化ホウ素のような酸化物の状態で酸化亜鉛中にドーピングされる。ドーピング量は、各々の元素が亜鉛に対して1.0〜4.0重量%となるように施されることが好ましい。ドーピング量は多すぎても少なすぎても導電性が低下する傾向がある。この理由は、多すぎるとドーパントの酸化物が結晶粒界近傍に偏析するようになり導電キャリアの粒界散乱の原因となる。一方、少なすぎると導電性に寄与するキャリアが減少し、導電性が得られない。
Sa≦0.01×D+4.0
Sds≧−0.55×D+420
後記の各実施例又は各実験例において、ドーピング量測定にはEDX測定機能を搭載した走査電子顕微鏡JSM−6390−LA(日本電子社製)を用いた。ドーピング量は、珪素と亜鉛の元素の検出量の比を原子数として、それぞれ物質量比(モル比)に変換し、二酸化珪素(分子量60g/mol)と酸化亜鉛(分子量81g/mol)の比として計算した。透明導電性酸化物層の膜厚は分光エリプソメーターVASE(J.A・ウーラム社製)を使用した。フィッティングはChaucyモデルにより行った。レーザーラマン分光測定にはレーザーラマン分光測定装置NR−1000(日本分光工業社製)を使用した。
いずれの透明電極付き基板についても、該基板形成直後の該基板表面のシート抵抗(R0)を基準とする、該基板を85℃/85%RH環境下で10日間放置した後の該基板表面のシート抵抗(R1)の比(R1/R0)を信頼性試験結果とした。シート抵抗測定には、抵抗率計ロレスタGP MCT−610(三菱化学社製)を用いた。
(信頼性試験結果)=(10日後のシート抵抗)÷(製膜直後のシート抵抗)
無アルカリガラス基材(商品名OA−10、日本電気硝子社製、膜厚0.7mm)に、透明導電性酸化物層をマグネトロンスパッタリング製膜した。スパッタターゲットとしては、1.0重量%の二酸化珪素が添加された酸化亜鉛(実施例1)、2.0重量%の二酸化珪素が添加された酸化亜鉛(実施例2)、二酸化珪素が添加されていない酸化亜鉛(比較例1)を使用し、アルゴンガスを標準状態換算で毎分20立方cm流しながら、圧力を0.2Paに調整し、8W/cm2 のパワー密度をかけて50nmの膜厚を製膜した。電源は高周波電源(周波数:13.56MHz)を使用した。
ターゲットサイズは直径4インチ(101.6mm)、ターゲット−基板間距離は80mm、基板温度は80℃とした。
作製された透明電極付き基板について、膜厚・透過率・シート抵抗を測定後に信頼性試験を実施した。
EDX測定による組成分析を行った結果、今回作製された透明電極に含まれる二酸化珪素は1.0重量%(実施例1)、2.0重量%(実施例2)であった。
スパッタパワー密度を4W/cm2 とした以外は実施例1と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を12W/cm2 とした以外は実施例2と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を4W/cm2 とした以外は実施例2と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を2W/cm2 とした以外は実施例1と同様にして透明電極付き基板を作製し、評価を実施した。
無アルカリガラス基材(商品名OA−10、日本電気硝子社製、膜厚0.7mm)上に、2.0重量%酸化ガリウムを添加した酸化亜鉛(GZO)をマグネトロンスパッタリング製膜した。膜厚は、実験例10のみ30nmとし、実験例6〜9及び比較例はすべて45nmとした。
製膜条件は、実施例1〜5と同様、下記のとおりである。
ターゲットサイズ:直径4インチ(101.6mm)
キャリアガス・圧力:アルゴンガス・0.2Pa
電源:高周波(13.56MHz)電源
ターゲット−基板間距離:80mm
基板温度:80℃
AFM(原子間力顕微鏡)測定はPacific Nanotechnology社製Nano−Rを使用した。他の測定装置については実施例1〜5と同様で、ラマンスペクトル分光測定は日本分光製NR−1000、シート抵抗測定は三菱化学社製ロレスタGP MCT−610を使用した。膜厚はJ・A・ウーラム社製分光エリプソメーターVASEを使用し、cauchyモデルによりフィッティングした。
スパッタパワー密度を9.87W/cm2 として透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を8.64W/cm2 とした以外は実験例6と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を6.79W/cm2 とした以外は実験例6と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を6.20W/cm2 とした以外は実験例6と同様にして透明電極付き基板を作製し、評価を実施した。
膜厚を30nmとした以外は実験例9と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を4.94W/cm2 とした以外は実験例6と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を3.09W/cm2 とした以外は実験例6と同様にして透明電極付き基板を作製し、評価を実施した。
スパッタパワー密度を1.23W/cm2 とした以外は実験例6と同様にして透明電極付き基板を作製し、評価を実施した。
Claims (5)
- 基材上に少なくとも1層からなる酸化亜鉛を主成分とする透明導電性酸化物層を有する透明電極付き基板であって、該透明導電性酸化物層を構成する酸化亜鉛透明導電性酸化物が二酸化珪素を酸化亜鉛に対して0.8〜2.1重量%含んでおり、且つレーザーラマン分光測定により検出されるA1対称の光学振動モードである縦波振動モードと横波振動モードのピーク強度をそれぞれILO、ITOとしたとき、ピーク強度比ILO/ITOが0.40以上であることを特徴とする透明電極付き基板。
- 上記ピーク強度比ILO/ITOが1.80以下であることを特徴とする請求項1記載の透明電極付き基板。
- 透明電極付き基板形成直後の該基板表面のシート抵抗を基準とする、該基板を85℃/85%相対湿度環境下で10日間放置した後の該基板表面のシート抵抗の比が、0.75〜1.5であることを特徴とする、請求項1又は2記載の透明電極付き基板。
- 請求項1〜3のいずれかに記載の透明電極付き基板の製造方法であって、透明導電性酸化物層をマグネトロンスパッタリング法により製膜し、スパッタターゲットとして二酸化珪素を酸化亜鉛に対して0.8〜2.1重量%含む混合物を用い、スパッタリング製膜時に上記ターゲットに印加されるパワー密度を3.5W/cm2 以上とすることを特徴とする、透明電極付き基板の製造方法。
- 上記パワー密度を18W/cm2 以下とすることを特徴とする、請求項4に記載の透明電極付き基板の製造方法。
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LAPS | Cancellation because of no payment of annual fees |