JP5695612B2 - 熱電モジュール,および熱電モジュールの製造方法 - Google Patents
熱電モジュール,および熱電モジュールの製造方法 Download PDFInfo
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- JP5695612B2 JP5695612B2 JP2012177758A JP2012177758A JP5695612B2 JP 5695612 B2 JP5695612 B2 JP 5695612B2 JP 2012177758 A JP2012177758 A JP 2012177758A JP 2012177758 A JP2012177758 A JP 2012177758A JP 5695612 B2 JP5695612 B2 JP 5695612B2
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- 238000000034 method Methods 0.000 title description 11
- 238000004519 manufacturing process Methods 0.000 title description 10
- 230000000694 effects Effects 0.000 claims description 45
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 40
- 229910001374 Invar Inorganic materials 0.000 claims description 37
- 239000000463 material Substances 0.000 description 85
- 229910045601 alloy Inorganic materials 0.000 description 39
- 239000000956 alloy Substances 0.000 description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- 239000007772 electrode material Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 11
- 230000009286 beneficial effect Effects 0.000 description 9
- 229910010293 ceramic material Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000000930 thermomechanical effect Effects 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 229910003271 Ni-Fe Inorganic materials 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000001747 exhibiting effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910020598 Co Fe Inorganic materials 0.000 description 3
- 229910002519 Co-Fe Inorganic materials 0.000 description 3
- -1 FeNiPt Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 229910002665 PbTe Inorganic materials 0.000 description 3
- 230000005678 Seebeck effect Effects 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910002521 CoMn Inorganic materials 0.000 description 2
- 229910002467 CrFe Inorganic materials 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 2
- 229910005335 FePt Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910018989 CoSb Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- PMGQWSIVQFOFOQ-YKVZVUFRSA-N clemastine fumarate Chemical compound OC(=O)\C=C\C(O)=O.CN1CCC[C@@H]1CCO[C@@](C)(C=1C=CC(Cl)=CC=1)C1=CC=CC=C1 PMGQWSIVQFOFOQ-YKVZVUFRSA-N 0.000 description 1
- 229910052963 cobaltite Inorganic materials 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910001291 heusler alloy Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
ここで,
0.1重量% ≦ b ≦ 0.5重量%
0.05重量% ≦ c ≦ 0.3重量%
0重量% ≦ d ≦ 8.0重量%
0重量% ≦ e ≦ 0.03重量%
43.0重量% ≦ f ≦ 67.0重量%
付随的な不純物 ≦ 1.0重量%; 残余Ni
0.2重量% ≦ b ≦ 0.4重量%
0.1重量% ≦ c ≦ 0.2重量%
0.9重量% ≦ d ≦ 6.0重量%
0重量% ≦ e ≦ 0.02重量%
44.5重量% ≦ f ≦ 65.0重量%
43.0重量% ≦ f ≦ 50.0重量%
ここで,
26.0重量% ≦ a ≦ 32.0重量%
15.0重量% ≦ b ≦ 25.0重量%
0重量% ≦ c ≦ 0重量%
0重量% ≦ d ≦ 2.0重量%
0重量% ≦ f ≦ 2.0重量%
付随的な不純物 ≦ 1.0重量%; 残余Fe
次に示す範囲の場合,より望ましい。
28.0重量% ≦ a ≦ 30.0重量%
17.0重量% ≦ b ≦ 23.0重量%
0重量% ≦ c ≦ 1.0重量%
0重量% ≦ d ≦ 1.0重量%
0重量% ≦ f ≦ 1.0重量%
各応用例にとって適切な複数の電流/電圧特性を,並列接続及び直列接続の様々な組み合わせによって提供されてもよく,直列接続が図1において例示されている。図1において,電気消費9が,電気抵抗の形で,概略的に例示されている。
2 熱電素子
3 電極
3’ 層
3” 層
3n 層
4 電極
5 熱源
6 ヒートシンク
7 絶縁層
8 絶縁層
9 コンシューマ
10 熱電モジュール
11 側
12 側
13 表面
14 表面
15 境界面
16 境界面
17 領域
18 領域
Claims (2)
- 熱エネルギーと電気エネルギーとの間のエネルギーを交換するための少なくとも1個の熱電素子(1,2)であって,上記少なくとも1個の熱電素子(1,2)は,第1の面(13)と,当該第1の面と反対側の第2の面を備えるものと;
上記第1の面(13)の上に直接配置される少なくとも第1の領域(17)を有する第1の電極(3)と;
上記第2の面(14)に直接配置される少なくとも第2の領域(18)を含む第2の電極(4)とを備え,
上記第1の領域(17)および上記第2の領域(18)の少なくとも一方はインバー効果を発揮する金属合金を備え,
上記第1の電極(3)および上記第2の電極(4)の上記少なくとも1個は,上記金属合金を含む第1の層と,第2の層とを備え,
上記第1の層及び上記第2の層は互いに溶接もしくはハンダ付けされる,
熱電モジュール。 - 熱エネルギーと電気エネルギーとの間のエネルギーを交換するための少なくとも1個の熱電素子(1,2)であって,上記少なくとも1個の熱電素子(1,2)は,第1の面(13)と,当該第1の面と反対側の第2の面を備えるものと;
上記第1の面(13)の上に直接配置される少なくとも第1の領域(17)を有する第1の電極(3)と;
上記第2の面(14)に直接配置される少なくとも第2の領域(18)を含む第2の電極(4)とを備え,
上記第1の領域(17)および上記第2の領域(18)の少なくとも一方はインバー効果を発揮する金属合金を備え,
上記金属合金はある破壊靭性K1cを有し,ここでK1c ≧50MPa m1/2である,
熱電モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011052565.3 | 2011-08-10 | ||
DE102011052565.3A DE102011052565B4 (de) | 2011-08-10 | 2011-08-10 | Thermoelektrisches Modul und Verfahren zur Herstellung eines thermoelektrischen Moduls |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013048234A JP2013048234A (ja) | 2013-03-07 |
JP5695612B2 true JP5695612B2 (ja) | 2015-04-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012177758A Active JP5695612B2 (ja) | 2011-08-10 | 2012-08-10 | 熱電モジュール,および熱電モジュールの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20130037071A1 (ja) |
JP (1) | JP5695612B2 (ja) |
DE (1) | DE102011052565B4 (ja) |
GB (1) | GB2493632B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014149368A1 (en) * | 2013-03-15 | 2014-09-25 | Research Triangle Institute | Biomass combustion device with a thermoelectric-powered control |
JP6434023B2 (ja) * | 2013-12-05 | 2018-12-05 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh | 熱電発電装置モジュールおよび熱電発電ユニット |
JP6317123B2 (ja) | 2014-02-10 | 2018-04-25 | 昭和電工株式会社 | 熱電素子、熱電モジュールおよび熱電素子の製造方法 |
JP6382093B2 (ja) * | 2014-12-17 | 2018-08-29 | 古河電気工業株式会社 | 熱電変換素子および熱電変換モジュール |
CN110431676A (zh) * | 2017-03-16 | 2019-11-08 | 琳得科株式会社 | 热电转换模块用电极材料及使用其的热电转换模块 |
US20190371995A1 (en) * | 2018-05-29 | 2019-12-05 | Faurecia Automotive Seating, Llc | Thermoelectric device with parallel elements |
CN111430531B (zh) * | 2020-04-29 | 2022-02-15 | 武汉大学 | 一种廉价高效能石墨涂层半导体合金光热热电转换装置 |
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US3129117A (en) * | 1960-08-12 | 1964-04-14 | Westinghouse Electric Corp | Thermoelectric materials and their production by powdered metallurgy techniques |
US3432365A (en) * | 1963-02-07 | 1969-03-11 | North American Rockwell | Composite thermoelectric assembly having preformed intermediate layers of graded composition |
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JPH11330568A (ja) * | 1998-05-12 | 1999-11-30 | Nissan Motor Co Ltd | 熱電発電装置およびその製造方法 |
US6207886B1 (en) * | 1998-06-30 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Skutterudite thermoelectric material thermoelectric couple and method of producing the same |
US6700053B2 (en) * | 2000-07-03 | 2004-03-02 | Komatsu Ltd. | Thermoelectric module |
JP2002060908A (ja) * | 2000-08-11 | 2002-02-28 | Nisshin Steel Co Ltd | エッチング性及び耐変形性に優れたシャドウマスク用低熱膨張Fe−Ni系合金板及びその製造方法 |
JP2002094131A (ja) * | 2000-09-13 | 2002-03-29 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
US6759586B2 (en) * | 2001-03-26 | 2004-07-06 | Kabushiki Kaisha Toshiba | Thermoelectric module and heat exchanger |
JP2002359328A (ja) * | 2001-03-29 | 2002-12-13 | Hitachi Ltd | 半導体装置 |
JP2002327248A (ja) * | 2001-05-07 | 2002-11-15 | Nkk Corp | 電子部品用低熱膨張性合金薄板および電子部品 |
JP4309623B2 (ja) * | 2002-07-25 | 2009-08-05 | 株式会社東芝 | 熱電素子用電極材およびそれを用いた熱電素子 |
JP2004238732A (ja) * | 2002-12-09 | 2004-08-26 | Hitachi Metals Ltd | 画像表示装置部材用帯鋼及びそれを用いた画像表示装置部材 |
JP2006032620A (ja) * | 2004-07-15 | 2006-02-02 | Eco 21 Inc | 熱電変換モジュール |
JP2007109942A (ja) * | 2005-10-14 | 2007-04-26 | Toyota Industries Corp | 熱電モジュール及び熱電モジュールの製造方法 |
US20070261730A1 (en) * | 2006-05-12 | 2007-11-15 | General Electric Company | Low dimensional thermoelectrics fabricated by semiconductor wafer etching |
DE102008009429A1 (de) * | 2007-03-15 | 2008-09-18 | Robert Bosch Gmbh | Abdichtung für eine Glühkerze |
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-
2011
- 2011-08-10 DE DE102011052565.3A patent/DE102011052565B4/de active Active
-
2012
- 2012-08-10 GB GB1214295.6A patent/GB2493632B/en active Active
- 2012-08-10 US US13/571,912 patent/US20130037071A1/en not_active Abandoned
- 2012-08-10 JP JP2012177758A patent/JP5695612B2/ja active Active
-
2015
- 2015-02-06 US US14/615,909 patent/US20150155463A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE102011052565A1 (de) | 2013-02-14 |
GB2493632A (en) | 2013-02-13 |
JP2013048234A (ja) | 2013-03-07 |
DE102011052565B4 (de) | 2019-04-18 |
US20130037071A1 (en) | 2013-02-14 |
GB201214295D0 (en) | 2012-09-26 |
GB2493632B (en) | 2015-10-14 |
US20150155463A1 (en) | 2015-06-04 |
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