JP5647860B2 - 薄膜トランジスタおよびその製造方法 - Google Patents

薄膜トランジスタおよびその製造方法 Download PDF

Info

Publication number
JP5647860B2
JP5647860B2 JP2010242126A JP2010242126A JP5647860B2 JP 5647860 B2 JP5647860 B2 JP 5647860B2 JP 2010242126 A JP2010242126 A JP 2010242126A JP 2010242126 A JP2010242126 A JP 2010242126A JP 5647860 B2 JP5647860 B2 JP 5647860B2
Authority
JP
Japan
Prior art keywords
film
gate insulating
insulating film
active layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010242126A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012094757A (ja
JP2012094757A5 (enExample
Inventor
文彦 望月
文彦 望月
真宏 高田
真宏 高田
雅司 小野
雅司 小野
田中　淳
淳 田中
鈴木　真之
真之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2010242126A priority Critical patent/JP5647860B2/ja
Priority to KR1020137010637A priority patent/KR20130139950A/ko
Priority to PCT/JP2011/074289 priority patent/WO2012057020A1/ja
Priority to KR1020167014266A priority patent/KR20160075763A/ko
Publication of JP2012094757A publication Critical patent/JP2012094757A/ja
Publication of JP2012094757A5 publication Critical patent/JP2012094757A5/ja
Priority to US13/871,305 priority patent/US20130234135A1/en
Application granted granted Critical
Publication of JP5647860B2 publication Critical patent/JP5647860B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2010242126A 2010-10-28 2010-10-28 薄膜トランジスタおよびその製造方法 Active JP5647860B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010242126A JP5647860B2 (ja) 2010-10-28 2010-10-28 薄膜トランジスタおよびその製造方法
KR1020137010637A KR20130139950A (ko) 2010-10-28 2011-10-21 박막 트랜지스터 및 그 제조 방법
PCT/JP2011/074289 WO2012057020A1 (ja) 2010-10-28 2011-10-21 薄膜トランジスタおよびその製造方法
KR1020167014266A KR20160075763A (ko) 2010-10-28 2011-10-21 박막 트랜지스터 및 그 제조 방법
US13/871,305 US20130234135A1 (en) 2010-10-28 2013-04-26 Thin film transistor and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010242126A JP5647860B2 (ja) 2010-10-28 2010-10-28 薄膜トランジスタおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2012094757A JP2012094757A (ja) 2012-05-17
JP2012094757A5 JP2012094757A5 (enExample) 2012-09-27
JP5647860B2 true JP5647860B2 (ja) 2015-01-07

Family

ID=45993730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010242126A Active JP5647860B2 (ja) 2010-10-28 2010-10-28 薄膜トランジスタおよびその製造方法

Country Status (4)

Country Link
US (1) US20130234135A1 (enExample)
JP (1) JP5647860B2 (enExample)
KR (2) KR20130139950A (enExample)
WO (1) WO2012057020A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102683424B (zh) 2012-04-28 2013-08-07 京东方科技集团股份有限公司 显示装置、阵列基板、薄膜晶体管及其制作方法
WO2014002920A1 (en) 2012-06-29 2014-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5936568B2 (ja) * 2013-03-08 2016-06-22 富士フイルム株式会社 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
EP2853383A1 (en) * 2013-09-27 2015-04-01 Bayer MaterialScience AG System and Method for Continuous Manufacturing of Composite Films
JP6322380B2 (ja) * 2013-10-17 2018-05-09 株式会社ジャパンディスプレイ 表示装置
KR102270823B1 (ko) 2013-10-22 2021-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP6178733B2 (ja) * 2014-01-29 2017-08-09 出光興産株式会社 積層構造、その製造方法及び薄膜トランジスタ
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
WO2019081996A1 (en) * 2017-10-26 2019-05-02 Sabic Global Technologies B.V. LOW TEMPERATURE TRANSISTOR PROCESSING
JP7640838B2 (ja) * 2021-03-23 2025-03-06 日新電機株式会社 シリコン酸窒化膜の成膜方法及び薄膜トランジスタの製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002132185A (ja) * 2000-10-26 2002-05-09 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法、それを用いたｔｆｔアレイ、液晶表示装置、ｅｌ表示装置
JP5105842B2 (ja) * 2006-12-05 2012-12-26 キヤノン株式会社 酸化物半導体を用いた表示装置及びその製造方法
JP5215589B2 (ja) 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
JP5467728B2 (ja) * 2008-03-14 2014-04-09 富士フイルム株式会社 薄膜電界効果型トランジスタおよびその製造方法
US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20110084523A (ko) 2008-11-07 2011-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8114720B2 (en) * 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5371467B2 (ja) 2009-02-12 2013-12-18 富士フイルム株式会社 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
WO2010098101A1 (ja) * 2009-02-27 2010-09-02 株式会社アルバック トランジスタ、トランジスタの製造方法及びその製造装置
CN102473728B (zh) * 2009-06-30 2014-11-26 株式会社半导体能源研究所 半导体装置的制造方法
KR102162746B1 (ko) * 2009-10-21 2020-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
KR102047354B1 (ko) * 2010-02-26 2019-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5727832B2 (ja) * 2010-03-31 2015-06-03 株式会社半導体エネルギー研究所 トランジスタ
JP5656049B2 (ja) * 2010-05-26 2015-01-21 ソニー株式会社 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JP2012094757A (ja) 2012-05-17
US20130234135A1 (en) 2013-09-12
KR20160075763A (ko) 2016-06-29
KR20130139950A (ko) 2013-12-23
WO2012057020A1 (ja) 2012-05-03

Similar Documents

Publication Publication Date Title
JP5647860B2 (ja) 薄膜トランジスタおよびその製造方法
JP4982620B1 (ja) 電界効果型トランジスタの製造方法、並びに、電界効果型トランジスタ、表示装置、イメージセンサ及びｘ線センサ
JP4982619B1 (ja) 半導体素子の製造方法及び電界効果型トランジスタの製造方法
JP5497417B2 (ja) 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
JP5496745B2 (ja) 薄膜電界効果型トランジスタおよびその製造方法
KR101792258B1 (ko) 박막 트랜지스터 및 그 제조 방법
JP5525380B2 (ja) 酸化物半導体薄膜の製造方法および薄膜トランジスタの製造方法
JP2010040645A (ja) 薄膜電界効果型トランジスタの製造方法及び該製造方法によって製造された薄膜電界効果型トランジスタ
JP2012191072A (ja) 薄膜トランジスタの製造方法、薄膜トランジスタ、表示装置、センサ及びｘ線デジタル撮影装置
WO2012124434A1 (ja) 電界効果型トランジスタ、表示装置、センサ及び電界効果型トランジスタの製造方法
JP2013041944A (ja) 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置
US20230387242A1 (en) Thin film transistor and method of manufactruting thin film transistor
KR101687468B1 (ko) 박막 트랜지스터 및 그 제조 방법, 표시 장치, 이미지 센서, x 선 센서 그리고 x 선 디지털 촬영 장치
JP6121149B2 (ja) 酸化物半導体素子、酸化物半導体素子の製造方法、表示装置及びイメージセンサ
JP5523896B2 (ja) 薄膜トランジスタおよびその製造方法
JP5844030B2 (ja) 電界効果型トランジスタの製造方法、表示装置の製造方法、ｘ線撮像装置の製造方法及び光センサの製造方法
JP5679417B2 (ja) 酸化物半導体薄膜の製造方法および該製造方法により作製された酸化物半導体薄膜、薄膜トランジスタ、並びに薄膜トランジスタを備えた装置
JP2015153902A (ja) 薄膜トランジスタ装置及びその製造方法
JP5548500B2 (ja) 薄膜電界効果型トランジスタの製造方法
JP5523897B2 (ja) 薄膜トランジスタおよびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120814

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130611

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140415

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140605

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141110

R150 Certificate of patent or registration of utility model

Ref document number: 5647860

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250