KR20130139950A - 박막 트랜지스터 및 그 제조 방법 - Google Patents

박막 트랜지스터 및 그 제조 방법 Download PDF

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Publication number
KR20130139950A
KR20130139950A KR1020137010637A KR20137010637A KR20130139950A KR 20130139950 A KR20130139950 A KR 20130139950A KR 1020137010637 A KR1020137010637 A KR 1020137010637A KR 20137010637 A KR20137010637 A KR 20137010637A KR 20130139950 A KR20130139950 A KR 20130139950A
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South Korea
Prior art keywords
film
gate insulating
insulating film
active layer
substrate
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KR1020137010637A
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English (en)
Korean (ko)
Inventor
후미히코 모치즈키
마사히로 다카타
마사시 오노
아츠시 다나카
마사유키 스즈키
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후지필름 가부시키가이샤
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Publication of KR20130139950A publication Critical patent/KR20130139950A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020137010637A 2010-10-28 2011-10-21 박막 트랜지스터 및 그 제조 방법 Ceased KR20130139950A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-242126 2010-10-28
JP2010242126A JP5647860B2 (ja) 2010-10-28 2010-10-28 薄膜トランジスタおよびその製造方法
PCT/JP2011/074289 WO2012057020A1 (ja) 2010-10-28 2011-10-21 薄膜トランジスタおよびその製造方法

Related Child Applications (1)

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KR1020167014266A Division KR20160075763A (ko) 2010-10-28 2011-10-21 박막 트랜지스터 및 그 제조 방법

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KR20130139950A true KR20130139950A (ko) 2013-12-23

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KR1020137010637A Ceased KR20130139950A (ko) 2010-10-28 2011-10-21 박막 트랜지스터 및 그 제조 방법
KR1020167014266A Ceased KR20160075763A (ko) 2010-10-28 2011-10-21 박막 트랜지스터 및 그 제조 방법

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KR1020167014266A Ceased KR20160075763A (ko) 2010-10-28 2011-10-21 박막 트랜지스터 및 그 제조 방법

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Country Link
US (1) US20130234135A1 (enExample)
JP (1) JP5647860B2 (enExample)
KR (2) KR20130139950A (enExample)
WO (1) WO2012057020A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431435B2 (en) 2013-10-22 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same

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CN102683424B (zh) 2012-04-28 2013-08-07 京东方科技集团股份有限公司 显示装置、阵列基板、薄膜晶体管及其制作方法
WO2014002920A1 (en) 2012-06-29 2014-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5936568B2 (ja) * 2013-03-08 2016-06-22 富士フイルム株式会社 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
EP2853383A1 (en) * 2013-09-27 2015-04-01 Bayer MaterialScience AG System and Method for Continuous Manufacturing of Composite Films
JP6322380B2 (ja) * 2013-10-17 2018-05-09 株式会社ジャパンディスプレイ 表示装置
JP6178733B2 (ja) * 2014-01-29 2017-08-09 出光興産株式会社 積層構造、その製造方法及び薄膜トランジスタ
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
WO2019081996A1 (en) * 2017-10-26 2019-05-02 Sabic Global Technologies B.V. LOW TEMPERATURE TRANSISTOR PROCESSING
JP7640838B2 (ja) * 2021-03-23 2025-03-06 日新電機株式会社 シリコン酸窒化膜の成膜方法及び薄膜トランジスタの製造方法

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JP2002132185A (ja) * 2000-10-26 2002-05-09 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法、それを用いたｔｆｔアレイ、液晶表示装置、ｅｌ表示装置
JP5105842B2 (ja) * 2006-12-05 2012-12-26 キヤノン株式会社 酸化物半導体を用いた表示装置及びその製造方法
JP5215589B2 (ja) 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
JP5467728B2 (ja) * 2008-03-14 2014-04-09 富士フイルム株式会社 薄膜電界効果型トランジスタおよびその製造方法
US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20110084523A (ko) 2008-11-07 2011-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8114720B2 (en) * 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5371467B2 (ja) 2009-02-12 2013-12-18 富士フイルム株式会社 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
WO2010098101A1 (ja) * 2009-02-27 2010-09-02 株式会社アルバック トランジスタ、トランジスタの製造方法及びその製造装置
CN102473728B (zh) * 2009-06-30 2014-11-26 株式会社半导体能源研究所 半导体装置的制造方法
KR102162746B1 (ko) * 2009-10-21 2020-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
KR102047354B1 (ko) * 2010-02-26 2019-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5727832B2 (ja) * 2010-03-31 2015-06-03 株式会社半導体エネルギー研究所 トランジスタ
JP5656049B2 (ja) * 2010-05-26 2015-01-21 ソニー株式会社 薄膜トランジスタの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431435B2 (en) 2013-10-22 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9780201B2 (en) 2013-10-22 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US10186604B2 (en) 2013-10-22 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same

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Publication number Publication date
JP5647860B2 (ja) 2015-01-07
JP2012094757A (ja) 2012-05-17
US20130234135A1 (en) 2013-09-12
KR20160075763A (ko) 2016-06-29
WO2012057020A1 (ja) 2012-05-03

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