JP5641185B2 - 液体噴射ヘッド及び液体噴射装置並びに圧電素子 - Google Patents
液体噴射ヘッド及び液体噴射装置並びに圧電素子 Download PDFInfo
- Publication number
- JP5641185B2 JP5641185B2 JP2010000829A JP2010000829A JP5641185B2 JP 5641185 B2 JP5641185 B2 JP 5641185B2 JP 2010000829 A JP2010000829 A JP 2010000829A JP 2010000829 A JP2010000829 A JP 2010000829A JP 5641185 B2 JP5641185 B2 JP 5641185B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- piezoelectric
- film
- electrode
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007788 liquid Substances 0.000 title claims description 38
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 116
- 229910052697 platinum Inorganic materials 0.000 claims description 58
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 43
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 41
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 27
- 229910052746 lanthanum Inorganic materials 0.000 claims description 19
- 229910052748 manganese Inorganic materials 0.000 claims description 17
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 15
- JFFICVRMZXJORZ-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[La+3].[Bi+3].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[La+3].[Bi+3].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-] JFFICVRMZXJORZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 10
- 238000000634 powder X-ray diffraction Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 description 58
- 239000012071 phase Substances 0.000 description 47
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 35
- 239000010936 titanium Substances 0.000 description 35
- 229910052719 titanium Inorganic materials 0.000 description 35
- 239000000463 material Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 30
- 239000002243 precursor Substances 0.000 description 20
- 239000011572 manganese Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 230000005684 electric field Effects 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910052797 bismuth Inorganic materials 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000012212 insulator Substances 0.000 description 13
- 230000007704 transition Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 12
- 229910052742 iron Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000010287 polarization Effects 0.000 description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 10
- 238000005238 degreasing Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 150000002902 organometallic compounds Chemical class 0.000 description 9
- 238000004151 rapid thermal annealing Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000005620 antiferroelectricity Effects 0.000 description 3
- 230000005621 ferroelectricity Effects 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- SMSVUYQRWYTTLI-UHFFFAOYSA-L 2-ethylhexanoate;iron(2+) Chemical compound [Fe+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O SMSVUYQRWYTTLI-UHFFFAOYSA-L 0.000 description 2
- PPNFILUQDVDXDA-UHFFFAOYSA-K 2-ethylhexanoate;lanthanum(3+) Chemical compound [La+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O PPNFILUQDVDXDA-UHFFFAOYSA-K 0.000 description 2
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 description 2
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- DPSMAGROIBRZCO-UHFFFAOYSA-N [La].[Bi].[Mn].[Fe] Chemical compound [La].[Bi].[Mn].[Fe] DPSMAGROIBRZCO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RVLXVXJAKUJOMY-UHFFFAOYSA-N lanthanum;oxonickel Chemical compound [La].[Ni]=O RVLXVXJAKUJOMY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- -1 organic acid salts Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/055—Devices for absorbing or preventing back-pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Coating Apparatus (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010000829A JP5641185B2 (ja) | 2010-01-05 | 2010-01-05 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
| US12/983,838 US8573755B2 (en) | 2010-01-05 | 2011-01-03 | Liquid-ejecting head, liquid-ejecting apparatus, and piezoelectric element |
| CN201110003853.7A CN102152630B (zh) | 2010-01-05 | 2011-01-04 | 液体喷射头、液体喷射装置和压电元件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010000829A JP5641185B2 (ja) | 2010-01-05 | 2010-01-05 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011142144A JP2011142144A (ja) | 2011-07-21 |
| JP2011142144A5 JP2011142144A5 (cg-RX-API-DMAC10.html) | 2013-02-07 |
| JP5641185B2 true JP5641185B2 (ja) | 2014-12-17 |
Family
ID=44224490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010000829A Expired - Fee Related JP5641185B2 (ja) | 2010-01-05 | 2010-01-05 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8573755B2 (cg-RX-API-DMAC10.html) |
| JP (1) | JP5641185B2 (cg-RX-API-DMAC10.html) |
| CN (1) | CN102152630B (cg-RX-API-DMAC10.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008057721A1 (de) * | 2008-11-17 | 2010-05-20 | Epcos Ag | Keramischer Werkstoff, Verfahren zur Herstellung des keramischen Werkstoffs und Bauelement mit dem keramischen Werkstoff |
| JP5660288B2 (ja) | 2010-01-05 | 2015-01-28 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置及び圧電素子並びに液体噴射ヘッドの製造方法 |
| JP5556182B2 (ja) | 2010-01-05 | 2014-07-23 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
| JP5660274B2 (ja) * | 2010-01-05 | 2015-01-28 | セイコーエプソン株式会社 | 液体噴射ヘッドの製造方法、圧電素子の製造方法、液体噴射ヘッド、液体噴射装置及び圧電素子 |
| JP2011211143A (ja) * | 2010-03-12 | 2011-10-20 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
| JP5375688B2 (ja) * | 2010-03-16 | 2013-12-25 | セイコーエプソン株式会社 | 液体噴射ヘッド、圧電素子および圧電アクチュエーター |
| JP6326991B2 (ja) * | 2013-06-12 | 2018-05-23 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド及び液体噴射装置 |
| JP6263950B2 (ja) * | 2013-10-22 | 2018-01-24 | 株式会社リコー | 電気−機械変換素子とその製造方法及び電気−機械変換素子を備えた液滴吐出ヘッド、インクカートリッジ並びに画像形成装置 |
| US10355196B2 (en) * | 2016-02-10 | 2019-07-16 | Seiko Epson Corporation | Piezoelectric element, piezoelectric element application device, and method of manufacturing piezoelectric element |
| JP2019161098A (ja) * | 2018-03-15 | 2019-09-19 | セイコーエプソン株式会社 | 圧電素子及び液体吐出ヘッド |
| KR102050753B1 (ko) * | 2018-06-04 | 2019-12-02 | 충남대학교산학협력단 | 유연 압전소자 제조방법 및 이로부터 제조된 유연 압전소자 |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453262A (en) | 1988-12-09 | 1995-09-26 | Battelle Memorial Institute | Continuous process for production of ceramic powders with controlled morphology |
| US5264403A (en) | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| JP4051654B2 (ja) | 2000-02-08 | 2008-02-27 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッド及びこれらの製造方法並びにインクジェットプリンタ |
| JP4015820B2 (ja) | 2001-04-11 | 2007-11-28 | 日本碍子株式会社 | 配線基板及びその製造方法 |
| US6969157B2 (en) | 2002-05-31 | 2005-11-29 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus |
| DE602005027556D1 (de) | 2004-03-05 | 2011-06-01 | Panasonic Corp | Piezoelektrisches element, inkjet-kopf, winkelgeschwindigkeitssensor, herstellungsverfahren dafür und inkjet-aufzeichnungseinrichtung |
| JP3806127B2 (ja) | 2004-04-06 | 2006-08-09 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP4984018B2 (ja) * | 2005-03-30 | 2012-07-25 | セイコーエプソン株式会社 | 圧電素子及び液体噴射ヘッド並びに液体噴射装置 |
| JP4793568B2 (ja) | 2005-07-08 | 2011-10-12 | セイコーエプソン株式会社 | アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 |
| JP4333686B2 (ja) * | 2006-04-03 | 2009-09-16 | セイコーエプソン株式会社 | アクチュエータ装置及び液体噴射ヘッド並びに液体噴射装置 |
| JP5041121B2 (ja) | 2006-04-12 | 2012-10-03 | セイコーエプソン株式会社 | インクジェット式記録ヘッドおよびインクジェットプリンタ |
| US8505925B2 (en) * | 2006-09-28 | 2013-08-13 | GM Global Technology Operations LLC | Temperature adaptive dynamic shaft seal assembly |
| US7498725B2 (en) | 2006-11-30 | 2009-03-03 | Tdk Corporation | Piezoelectric ceramic composition and laminated piezoelectric element |
| EP1986245B1 (en) | 2007-04-26 | 2015-08-26 | FUJIFILM Corporation | Piezoelectric body, piezoelectrc device, and liquid discharge apparatus |
| JP5307986B2 (ja) | 2007-05-07 | 2013-10-02 | 富士フイルム株式会社 | 圧電素子とその製造方法、及び液体吐出装置 |
| JP5253895B2 (ja) | 2007-06-08 | 2013-07-31 | 富士フイルム株式会社 | 強誘電体膜、圧電素子、及び液体吐出装置 |
| JP5253894B2 (ja) | 2007-06-08 | 2013-07-31 | 富士フイルム株式会社 | 強誘電体膜、圧電素子、及び液体吐出装置 |
| US20080302658A1 (en) | 2007-06-08 | 2008-12-11 | Tsutomu Sasaki | Oxide body, piezoelectric device, and liquid discharge device |
| JP2009070926A (ja) | 2007-09-11 | 2009-04-02 | Tokyo Institute Of Technology | ペロブスカイト型酸化物薄膜の成膜方法および積層体 |
| JP2009071144A (ja) | 2007-09-14 | 2009-04-02 | Seiko Epson Corp | 強誘電体メモリの製造方法 |
| JP5391395B2 (ja) * | 2007-10-15 | 2014-01-15 | 日立金属株式会社 | 圧電薄膜付き基板及び圧電素子 |
| JP2009113419A (ja) | 2007-11-08 | 2009-05-28 | Seiko Epson Corp | 液体噴射ヘッドの製造方法及び圧電素子の製造方法 |
| JP5507097B2 (ja) | 2008-03-12 | 2014-05-28 | 富士フイルム株式会社 | ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置 |
| JP5267971B2 (ja) | 2008-03-21 | 2013-08-21 | 国立大学法人金沢大学 | 強誘電体材料及び圧電体 |
| CN101544113A (zh) * | 2008-03-27 | 2009-09-30 | 精工爱普生株式会社 | 液体喷射头、液体喷射装置、以及执行器 |
| JP2009255529A (ja) * | 2008-03-27 | 2009-11-05 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びにアクチュエータ |
| JP4775772B2 (ja) | 2008-04-01 | 2011-09-21 | セイコーエプソン株式会社 | 圧電材料および圧電素子 |
| JP5248168B2 (ja) | 2008-04-01 | 2013-07-31 | セイコーエプソン株式会社 | 圧電材料および圧電素子 |
| JP2009286120A (ja) | 2008-04-30 | 2009-12-10 | Seiko Epson Corp | 液体噴射ヘッド及び圧電素子 |
| JP5313792B2 (ja) | 2008-07-17 | 2013-10-09 | 富士フイルム株式会社 | ペロブスカイト型酸化物、酸化物組成物、酸化物体、圧電素子、及び液体吐出装置 |
| JP2010067756A (ja) | 2008-09-10 | 2010-03-25 | Fujifilm Corp | 圧電体膜、圧電素子、及び液体吐出装置 |
| JP5010565B2 (ja) | 2008-09-26 | 2012-08-29 | 株式会社東芝 | 磁気抵抗素子及び磁気メモリ |
| JP5435206B2 (ja) | 2009-02-25 | 2014-03-05 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
| JP5577844B2 (ja) | 2009-11-02 | 2014-08-27 | セイコーエプソン株式会社 | 液体噴射装置 |
| JP5621964B2 (ja) * | 2009-11-02 | 2014-11-12 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置及び圧電素子並びに超音波デバイス |
| JP2011207202A (ja) | 2009-11-02 | 2011-10-20 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置及び圧電素子並びに圧電材料 |
| JP5445755B2 (ja) * | 2009-11-11 | 2014-03-19 | セイコーエプソン株式会社 | 液滴噴射ヘッドおよびその製造方法、並びに液滴噴射装置 |
| JP5556182B2 (ja) | 2010-01-05 | 2014-07-23 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
| JP5660288B2 (ja) | 2010-01-05 | 2015-01-28 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置及び圧電素子並びに液体噴射ヘッドの製造方法 |
| JP5660274B2 (ja) * | 2010-01-05 | 2015-01-28 | セイコーエプソン株式会社 | 液体噴射ヘッドの製造方法、圧電素子の製造方法、液体噴射ヘッド、液体噴射装置及び圧電素子 |
| JP5725272B2 (ja) | 2010-03-08 | 2015-05-27 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
| JP2011211143A (ja) | 2010-03-12 | 2011-10-20 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
-
2010
- 2010-01-05 JP JP2010000829A patent/JP5641185B2/ja not_active Expired - Fee Related
-
2011
- 2011-01-03 US US12/983,838 patent/US8573755B2/en not_active Expired - Fee Related
- 2011-01-04 CN CN201110003853.7A patent/CN102152630B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20110164096A1 (en) | 2011-07-07 |
| CN102152630A (zh) | 2011-08-17 |
| US8573755B2 (en) | 2013-11-05 |
| CN102152630B (zh) | 2014-06-25 |
| JP2011142144A (ja) | 2011-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5660288B2 (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子並びに液体噴射ヘッドの製造方法 | |
| JP5527527B2 (ja) | 液体噴射ヘッド及び液体噴射装置 | |
| JP5660274B2 (ja) | 液体噴射ヘッドの製造方法、圧電素子の製造方法、液体噴射ヘッド、液体噴射装置及び圧電素子 | |
| JP2011142144A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
| JP5556182B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
| US9147829B2 (en) | Liquid ejection head | |
| JP2011211143A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
| JP2013128075A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
| JP2012018995A (ja) | 液体噴射ヘッドの製造方法、液体噴射装置及び圧電素子の製造方法並びに圧電体膜形成用組成物の製造方法 | |
| JP5585197B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
| JP2011238708A (ja) | 液体噴射ヘッドの製造方法、液体噴射装置、及び圧電素子の製造方法 | |
| JP5884959B2 (ja) | 圧電体膜の製造方法、圧電素子及び液体噴射ヘッド並びに液体噴射装置 | |
| JP5729507B2 (ja) | 圧電素子及び超音波デバイス | |
| JP2013098442A (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
| JP2015061048A (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子 | |
| JP2012018994A (ja) | 液体噴射ヘッドの製造方法、液体噴射装置及び圧電素子の製造方法並びに圧電体膜形成用組成物の製造方法 | |
| JP5773127B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びｉｒセンサー | |
| JP5915848B2 (ja) | 圧電素子の製造方法、液体噴射ヘッドの製造方法、液体噴射装置の製造方法、超音波デバイスの製造方法及びセンサーの製造方法 | |
| JP2014116625A (ja) | 圧電素子、およびその製造方法 | |
| JP5765525B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びｉｒセンサー | |
| JP5991457B2 (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子並びに圧電材料 | |
| JP2011142287A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
| JP2013165195A (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子 | |
| JP2013080882A (ja) | 液体噴射ヘッドの製造方法、液体噴射装置の製造方法及び圧電素子の製造方法 | |
| JP2012164893A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121214 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121214 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140402 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140526 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140618 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140818 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141001 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141014 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5641185 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |