JP2011142144A - 液体噴射ヘッド及び液体噴射装置並びに圧電素子 - Google Patents
液体噴射ヘッド及び液体噴射装置並びに圧電素子 Download PDFInfo
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- 238000000634 powder X-ray diffraction Methods 0.000 claims abstract description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 116
- 229910052697 platinum Inorganic materials 0.000 claims description 58
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 43
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 41
- 239000007788 liquid Substances 0.000 claims description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 25
- 229910052746 lanthanum Inorganic materials 0.000 claims description 19
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 15
- 229910052748 manganese Inorganic materials 0.000 claims description 15
- JFFICVRMZXJORZ-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[La+3].[Bi+3].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[La+3].[Bi+3].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-] JFFICVRMZXJORZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 238000004891 communication Methods 0.000 abstract description 13
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 58
- 239000012071 phase Substances 0.000 description 47
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 35
- 239000010936 titanium Substances 0.000 description 35
- 229910052719 titanium Inorganic materials 0.000 description 35
- 239000000463 material Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 30
- 239000002243 precursor Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 16
- 230000005684 electric field Effects 0.000 description 16
- 239000011572 manganese Substances 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 229910052797 bismuth Inorganic materials 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000007704 transition Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 12
- 239000012212 insulator Substances 0.000 description 12
- 229910052742 iron Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000010287 polarization Effects 0.000 description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 10
- 238000005238 degreasing Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 150000002902 organometallic compounds Chemical class 0.000 description 9
- 238000004151 rapid thermal annealing Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000005620 antiferroelectricity Effects 0.000 description 3
- 230000005621 ferroelectricity Effects 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- SMSVUYQRWYTTLI-UHFFFAOYSA-L 2-ethylhexanoate;iron(2+) Chemical compound [Fe+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O SMSVUYQRWYTTLI-UHFFFAOYSA-L 0.000 description 2
- PPNFILUQDVDXDA-UHFFFAOYSA-K 2-ethylhexanoate;lanthanum(3+) Chemical compound [La+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O PPNFILUQDVDXDA-UHFFFAOYSA-K 0.000 description 2
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RVLXVXJAKUJOMY-UHFFFAOYSA-N lanthanum;oxonickel Chemical compound [La].[Ni]=O RVLXVXJAKUJOMY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- -1 organic acid salts Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/055—Devices for absorbing or preventing back-pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
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- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
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- B41J2/01—Ink jet
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- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
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- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
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- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
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Abstract
【解決手段】ノズル開口に連通する圧力発生室12と、第1電極60と、前記第1電極上に形成され鉄マンガン酸ビスマスランタンを含む圧電体層と、前記圧電体層上に形成された第2電極と、を備えた圧電素子300と、を具備し、前記圧電体層は、粉末X線回折パターンにおいて、φ=ψ=0°で測定したときの20°<2θ<25°に観測される回折ピークの面積強度が、20°<2θ<50°に観測される回折ピークの面積強度の総和の90%以上である。
【選択図】図1
Description
(Bi1−x,Lax)(Fe1−y,Mny)O3 (1)
(0.10≦x≦0.20,0.01≦y≦0.09)
図1は、本発明の実施形態1に係る製造方法によって製造される液体噴射ヘッドの一例であるインクジェット式記録ヘッドの概略構成を示す分解斜視図であり、図2は、図1の平面図であり、図3は図2のA−A′断面図(図3(a))及び要部拡大図(図3(b))である。
(Bi1-x,Lax)(Fe1-y,Mny)O3 (1)
(0.10≦x≦0.20,0.01≦y≦0.09)
φ=ψ=0°で測定したときに20°<2θ<25°に観測されるABO3由来の回折ピークの面積強度が、20°<2θ<50°に観測されるABO3由来の回折ピークの面積強度の総和の90%以上、すなわち、結晶が(100)面に優先配向した圧電体層は、上述した製造方法により製造されたものに限定されるものではない。
まず、シリコン基板の表面に熱酸化により二酸化シリコン膜を形成した。次に、二酸化シリコン膜上にRFスパッタ法により膜厚400nmの酸化ジルコニウム膜を形成した。次いで、酸化ジルコニウム膜上に、DCスパッタ法により膜厚20nmのチタン膜を形成した。次に、チタン膜上にDCスパッタ法により膜厚130nmの白金膜を形成した。
白金膜上に、RFスパッタ法により、厚さ50nmのニッケル酸ランタンからなるLNO層を形成した以外は、実施例1と同様にして実施例2の圧電素子を形成した。また、同様に、ニッケル酸ランタンからなるLNO層の厚さを10nmとしたものを比較として形成した。
加熱装置内を500cc/分の流量の窒素でフローしたRTAのかわりに、加熱装置内を500cc/分の流量の酸素でフローしたRTAを行った以外は、実施例1と同様の操作を行った。
酸化ジルコニウム膜上に、チタン膜のかわりに酸化チタン膜を形成し、この酸化チタン膜の上に圧電体層を形成した以外は、実施例1と同様の操作を行った。
実施例1及び比較例1、2の各圧電素子について、東陽テクニカ社製「FCE−1A」で、φ=400μmの電極パターンを使用し、周波数1kHzの三角波を印加して、分極量と電圧の関係(P−V曲線)を求めた。結果を図25、図26に示す。なお、実施例1については比較のため、結果を図25、図26の全てに記載した。
実施例1及び比較例1の各圧電素子について、アグザクト社製の変位測定装置(DBLI)を用い室温で、φ=500μmの電極パターンを使用し、周波数1kHzの電圧を印加して、電界誘起歪―電界強度の関係(S−V曲線)を求めた。結果を図27に示す。
実施例1及び比較例1、2の圧電素子について、Bruker AXS社製の「D8 Discover」を用い、X線源にCuKα線を使用し、室温で、圧電体層の粉末X線回折パターンをφ=ψ=0°で求めた。実施例1、比較例1、2の結果を図28に示す。
以上、本発明の一実施形態を説明したが、本発明の基本的構成は上述したものに限定されるものではない。例えば、上述した実施形態では、圧電体層の基本組成が、金属元素として、Bi、La、Fe及びMnのみを含有するABO3型の複合酸化物について記載したが、Bi、La、Fe及びMnを含むABO3型の複合酸化物であればよく、他の金属を添加し特性の調整を行ってもよい。
Claims (9)
- ノズル開口に連通する圧力発生室と、第1電極と、前記第1電極上に形成され鉄マンガン酸ビスマスランタンを含む圧電体層と、前記圧電体層上に形成された第2電極と、を備えた圧電素子と、を具備し、
前記圧電体層は、粉末X線回折パターンにおいて、φ=ψ=0°で測定したときの20°<2θ<25°に観測される回折ピークの面積強度が、20°<2θ<50°に観測される回折ピークの面積強度の総和の90%以上であることを特徴とする液体噴射ヘッド。 - 前記第1電極は、酸化チタンを含む第1酸化チタン層と、第1酸化チタン層上に形成され白金を含む白金層と、前記白金層上に形成され酸化チタンを含む第2酸化チタン層とを含み、前記第2酸化チタン層上に前記圧電体層が形成されていることを特徴とする請求項1に記載の液体噴射ヘッド。
- 前記第1電極は、白金を含む白金層と、前記白金層上に形成されニッケル酸ランタンを含む厚さ50nm以上のLNO層とを含み、前記LNO層上に前記圧電体層が形成されていることを特徴とする請求項1に記載の液体噴射ヘッド。
- 前記鉄マンガン酸ビスマスランタンは、下記一般式で表される複合酸化物であることを特徴とする請求項1〜4のいずれか一項に記載の液体噴射ヘッド。
(Bi1−x,Lax)(Fe1−y,Mny)O3 (1)
(0.10≦x≦0.20,0.01≦y≦0.09) - 0.17≦x≦0.20であることを特徴とする請求項4に記載の液体噴射ヘッド。
- 0.19≦x≦0.20であることを特徴とする請求項5に記載の液体噴射ヘッド。
- 0.01≦y≦0.05であることを特徴とする請求項4〜6のいずれか一項に記載の液体噴射ヘッド。
- 請求項1〜7のいずれか一項に記載する液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 鉄マンガン酸ビスマスランタンを含む圧電体層と、
前記圧電体層に形成された電極と、を備え、
前記圧電体層は、粉末X線回折パターンにおいて、φ=ψ=0°で測定したときの20°<2θ<25°に観測される回折ピークの面積強度が、20°<2θ<50°に観測される回折ピークの面積強度の総和の90%以上であることを特徴とする圧電素子。
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