JP5637384B2 - 固体撮像素子および駆動方法、並びに電子機器 - Google Patents

固体撮像素子および駆動方法、並びに電子機器 Download PDF

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Publication number
JP5637384B2
JP5637384B2 JP2010279508A JP2010279508A JP5637384B2 JP 5637384 B2 JP5637384 B2 JP 5637384B2 JP 2010279508 A JP2010279508 A JP 2010279508A JP 2010279508 A JP2010279508 A JP 2010279508A JP 5637384 B2 JP5637384 B2 JP 5637384B2
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unit
voltage
charge
shielding film
light
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JP2012129798A5 (enExample
JP2012129798A (ja
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祐輔 大池
祐輔 大池
貴志 町田
貴志 町田
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Sony Corp
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Sony Corp
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Priority to JP2010279508A priority Critical patent/JP5637384B2/ja
Priority to US13/312,478 priority patent/US8884206B2/en
Priority to CN2011205220211U priority patent/CN202395874U/zh
Priority to CN2011104172060A priority patent/CN102547168A/zh
Publication of JP2012129798A publication Critical patent/JP2012129798A/ja
Publication of JP2012129798A5 publication Critical patent/JP2012129798A5/ja
Priority to US14/300,989 priority patent/US10229941B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010279508A 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器 Expired - Fee Related JP5637384B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010279508A JP5637384B2 (ja) 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器
US13/312,478 US8884206B2 (en) 2010-12-15 2011-12-06 Solid-state imaging element, driving method, and electronic apparatus
CN2011205220211U CN202395874U (zh) 2010-12-15 2011-12-14 固体摄像元件和电子装置
CN2011104172060A CN102547168A (zh) 2010-12-15 2011-12-14 固体摄像元件、固体摄像元件的驱动方法和电子装置
US14/300,989 US10229941B2 (en) 2010-12-15 2014-06-10 Solid-state imaging element, driving method, and electronic apparatus

Applications Claiming Priority (1)

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JP2010279508A JP5637384B2 (ja) 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器

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JP2012129798A JP2012129798A (ja) 2012-07-05
JP2012129798A5 JP2012129798A5 (enExample) 2014-01-09
JP5637384B2 true JP5637384B2 (ja) 2014-12-10

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US (2) US8884206B2 (enExample)
JP (1) JP5637384B2 (enExample)
CN (2) CN202395874U (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5637384B2 (ja) * 2010-12-15 2014-12-10 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
JP6012197B2 (ja) * 2012-02-17 2016-10-25 キヤノン株式会社 撮像装置及び撮像装置の駆動方法
JP6004665B2 (ja) * 2012-02-17 2016-10-12 キヤノン株式会社 撮像装置、および撮像システム。
WO2014002365A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
KR101352436B1 (ko) * 2012-10-31 2014-01-20 주식회사 동부하이텍 이미지 센서
JP5971106B2 (ja) * 2012-12-17 2016-08-17 株式会社デンソー 光センサ
JP2014165270A (ja) * 2013-02-22 2014-09-08 Sony Corp イメージセンサおよび電子機器
TWI623232B (zh) 2013-07-05 2018-05-01 Sony Corp 固體攝像裝置及其驅動方法以及包含固體攝像裝置之電子機器
CN103491324B (zh) * 2013-09-29 2016-04-20 长春长光辰芯光电技术有限公司 高速全局快门图像传感器像素及其像素信号的采样方法
JP6376785B2 (ja) * 2014-03-14 2018-08-22 キヤノン株式会社 撮像装置、および、撮像システム
KR102234041B1 (ko) * 2014-06-18 2021-04-01 삼성전자주식회사 이미지 센서와 이를 포함하는 이미지 처리 시스템
CN105934826B (zh) * 2014-12-18 2021-07-20 索尼公司 固态图像传感器、成像装置和电子设备
US9899445B2 (en) * 2015-05-19 2018-02-20 Canon Kabushiki Kaisha Method for manufacturing solid-state image pickup apparatus, solid-state image pickup apparatus, and image pickup system including the same
JP6711597B2 (ja) * 2015-12-01 2020-06-17 キヤノン株式会社 固体撮像装置の製造方法、固体撮像装置、及びそれを有する撮像システム
US9935140B2 (en) 2015-05-19 2018-04-03 Canon Kabushiki Kaisha Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
US10341592B2 (en) 2015-06-09 2019-07-02 Sony Semiconductor Solutions Corporation Imaging element, driving method, and electronic device
TWI701819B (zh) * 2015-06-09 2020-08-11 日商索尼半導體解決方案公司 攝像元件、驅動方法及電子機器
CN113099141B (zh) 2015-09-30 2024-06-11 株式会社尼康 摄像元件
JP6947160B2 (ja) * 2016-02-29 2021-10-13 ソニーグループ株式会社 固体撮像素子
CN108701705B (zh) * 2016-03-15 2022-11-18 索尼公司 固态成像元件及其制造方法和电子设备
CN107833896A (zh) * 2016-09-15 2018-03-23 精工爱普生株式会社 固体摄像装置和电子设备
JPWO2018062561A1 (ja) * 2016-09-29 2019-07-11 株式会社ニコン 撮像素子およびカメラ
CN110050345B (zh) * 2016-12-09 2023-11-14 索尼半导体解决方案公司 固态图像拾取元件和电子装置
CN110073494A (zh) * 2016-12-15 2019-07-30 Towerjazz松下半导体有限公司 固体摄像元件
JP2018160486A (ja) * 2017-03-22 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
CN109148497B (zh) * 2018-07-19 2020-12-25 上海集成电路研发中心有限公司 一种防止寄生光响应的全局像元结构及形成方法
CN109068075A (zh) * 2018-08-21 2018-12-21 德淮半导体有限公司 Cmos图像传感器、像素单元及其驱动方法
TWI685959B (zh) * 2019-01-07 2020-02-21 力晶積成電子製造股份有限公司 影像感測器及其製造方法
CN109841183B (zh) * 2019-03-27 2022-06-10 京东方科技集团股份有限公司 一种像素电路及其驱动方法、阵列基板、显示装置
CN110493546B (zh) * 2019-09-05 2021-08-17 锐芯微电子股份有限公司 Cmos图像传感器、像素单元及其控制方法
JP7638898B2 (ja) * 2019-12-02 2025-03-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2021125155A1 (ja) * 2019-12-20 2021-06-24 パナソニックＩｐマネジメント株式会社 固体撮像素子
JPWO2021153295A1 (enExample) * 2020-01-31 2021-08-05
JP2022104203A (ja) 2020-12-28 2022-07-08 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
US20230253436A1 (en) * 2022-02-07 2023-08-10 Samsung Electronics Co., Ltd. Image sensor and operation method thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3412390B2 (ja) * 1996-03-18 2003-06-03 株式会社ニコン 光電変換装置
JPH10313426A (ja) * 1997-03-10 1998-11-24 Nikon Corp 動き検出用固体撮像装置
JP3219036B2 (ja) * 1997-11-11 2001-10-15 日本電気株式会社 固体撮像装置
JP4192305B2 (ja) * 1998-08-27 2008-12-10 株式会社ニコン 固体撮像素子
JP2003258234A (ja) * 2002-02-28 2003-09-12 Sony Corp 固体撮像素子および固体撮像素子の駆動方法
JP4453306B2 (ja) 2003-09-04 2010-04-21 ソニー株式会社 固体撮像素子および固体撮像素子の駆動方法
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP4194544B2 (ja) 2003-12-05 2008-12-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP4935046B2 (ja) * 2005-10-19 2012-05-23 セイコーエプソン株式会社 固体撮像素子
JP4774311B2 (ja) * 2006-02-17 2011-09-14 富士フイルム株式会社 固体撮像素子及びその駆動方法並びに撮像装置
US20070205354A1 (en) * 2006-03-06 2007-09-06 Micron Technology, Inc. Image sensor light shield
JP2009026892A (ja) 2007-07-18 2009-02-05 Nikon Corp 固体撮像素子
JP2009130679A (ja) 2007-11-26 2009-06-11 Sony Corp 固体撮像素子、固体撮像素子の駆動方法および撮像装置
JP2010034512A (ja) * 2008-07-01 2010-02-12 Fujifilm Corp 固体撮像素子及び撮像装置
JP2011204878A (ja) * 2010-03-25 2011-10-13 Sony Corp 固体撮像デバイスおよび電子機器
JP2011216673A (ja) * 2010-03-31 2011-10-27 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP2011222708A (ja) * 2010-04-08 2011-11-04 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP5637384B2 (ja) * 2010-12-15 2014-12-10 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

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Publication number Publication date
US8884206B2 (en) 2014-11-11
US20120153126A1 (en) 2012-06-21
CN102547168A (zh) 2012-07-04
JP2012129798A (ja) 2012-07-05
US20140319323A1 (en) 2014-10-30
US10229941B2 (en) 2019-03-12
CN202395874U (zh) 2012-08-22

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