CN102547168A - 固体摄像元件、固体摄像元件的驱动方法和电子装置 - Google Patents

固体摄像元件、固体摄像元件的驱动方法和电子装置 Download PDF

Info

Publication number
CN102547168A
CN102547168A CN2011104172060A CN201110417206A CN102547168A CN 102547168 A CN102547168 A CN 102547168A CN 2011104172060 A CN2011104172060 A CN 2011104172060A CN 201110417206 A CN201110417206 A CN 201110417206A CN 102547168 A CN102547168 A CN 102547168A
Authority
CN
China
Prior art keywords
voltage
solid
photomask
state imager
electric charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011104172060A
Other languages
English (en)
Chinese (zh)
Inventor
大池祐辅
町田贵志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102547168A publication Critical patent/CN102547168A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2011104172060A 2010-12-15 2011-12-14 固体摄像元件、固体摄像元件的驱动方法和电子装置 Pending CN102547168A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010279508A JP5637384B2 (ja) 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器
JP2010-279508 2010-12-15

Publications (1)

Publication Number Publication Date
CN102547168A true CN102547168A (zh) 2012-07-04

Family

ID=46233130

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011104172060A Pending CN102547168A (zh) 2010-12-15 2011-12-14 固体摄像元件、固体摄像元件的驱动方法和电子装置
CN2011205220211U Expired - Fee Related CN202395874U (zh) 2010-12-15 2011-12-14 固体摄像元件和电子装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2011205220211U Expired - Fee Related CN202395874U (zh) 2010-12-15 2011-12-14 固体摄像元件和电子装置

Country Status (3)

Country Link
US (2) US8884206B2 (enExample)
JP (1) JP5637384B2 (enExample)
CN (2) CN102547168A (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103491324A (zh) * 2013-09-29 2014-01-01 长春长光辰芯光电技术有限公司 高速全局快门图像传感器像素及其像素信号的采样方法
CN104009051A (zh) * 2013-02-22 2014-08-27 索尼公司 图像传感器和电子装置
CN104756254A (zh) * 2012-12-17 2015-07-01 株式会社电装 光传感器
CN104917942A (zh) * 2014-03-14 2015-09-16 佳能株式会社 图像捕获装置和图像捕获系统
CN105934826A (zh) * 2014-12-18 2016-09-07 索尼公司 固态图像传感器、成像装置和电子设备
CN106169490A (zh) * 2015-05-19 2016-11-30 佳能株式会社 固态图像拾取装置及其制造方法和包括它的图像拾取系统
CN106169489A (zh) * 2015-05-19 2016-11-30 佳能株式会社 固态成像设备、固态成像设备的制造方法以及成像系统
CN107833896A (zh) * 2016-09-15 2018-03-23 精工爱普生株式会社 固体摄像装置和电子设备
CN108701705A (zh) * 2016-03-15 2018-10-23 索尼公司 固态成像元件及其制造方法和电子设备
CN109148497A (zh) * 2018-07-19 2019-01-04 上海集成电路研发中心有限公司 一种防止寄生光响应的全局像元结构及形成方法
CN110036631A (zh) * 2016-09-29 2019-07-19 株式会社尼康 摄像元件和相机
CN110050345A (zh) * 2016-12-09 2019-07-23 索尼半导体解决方案公司 固态图像拾取元件和电子装置
CN113099140A (zh) * 2015-09-30 2021-07-09 株式会社尼康 摄像元件及电子相机
CN114731376A (zh) * 2019-12-02 2022-07-08 索尼半导体解决方案公司 固体摄像装置和电子设备
CN114830338A (zh) * 2019-12-20 2022-07-29 松下知识产权经营株式会社 固体摄像元件
CN115472639A (zh) * 2015-10-26 2022-12-13 索尼半导体解决方案公司 光检测器件和电子装置

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5637384B2 (ja) * 2010-12-15 2014-12-10 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
JP6004665B2 (ja) * 2012-02-17 2016-10-12 キヤノン株式会社 撮像装置、および撮像システム。
JP6012197B2 (ja) * 2012-02-17 2016-10-25 キヤノン株式会社 撮像装置及び撮像装置の駆動方法
WO2014002365A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
KR101352436B1 (ko) * 2012-10-31 2014-01-20 주식회사 동부하이텍 이미지 센서
TWI623232B (zh) * 2013-07-05 2018-05-01 Sony Corp 固體攝像裝置及其驅動方法以及包含固體攝像裝置之電子機器
KR102234041B1 (ko) * 2014-06-18 2021-04-01 삼성전자주식회사 이미지 센서와 이를 포함하는 이미지 처리 시스템
JP6711597B2 (ja) * 2015-12-01 2020-06-17 キヤノン株式会社 固体撮像装置の製造方法、固体撮像装置、及びそれを有する撮像システム
US10341592B2 (en) 2015-06-09 2019-07-02 Sony Semiconductor Solutions Corporation Imaging element, driving method, and electronic device
TWI701819B (zh) * 2015-06-09 2020-08-11 日商索尼半導體解決方案公司 攝像元件、驅動方法及電子機器
CN113923387A (zh) * 2016-02-29 2022-01-11 索尼公司 固态摄像装置
JP6743181B2 (ja) * 2016-12-15 2020-08-19 タワー パートナーズ セミコンダクター株式会社 固体撮像素子
JP2018160486A (ja) * 2017-03-22 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
CN109068075A (zh) * 2018-08-21 2018-12-21 德淮半导体有限公司 Cmos图像传感器、像素单元及其驱动方法
TWI685959B (zh) * 2019-01-07 2020-02-21 力晶積成電子製造股份有限公司 影像感測器及其製造方法
CN109841183B (zh) * 2019-03-27 2022-06-10 京东方科技集团股份有限公司 一种像素电路及其驱动方法、阵列基板、显示装置
CN110493546B (zh) * 2019-09-05 2021-08-17 锐芯微电子股份有限公司 Cmos图像传感器、像素单元及其控制方法
WO2021153295A1 (ja) 2020-01-31 2021-08-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2022104203A (ja) * 2020-12-28 2022-07-08 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
US20230253436A1 (en) * 2022-02-07 2023-08-10 Samsung Electronics Co., Ltd. Image sensor and operation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102202189A (zh) * 2010-03-25 2011-09-28 索尼公司 固体摄像装置和电子装置
US20110241089A1 (en) * 2010-03-31 2011-10-06 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
JP2011222708A (ja) * 2010-04-08 2011-11-04 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
CN202395874U (zh) * 2010-12-15 2012-08-22 索尼公司 固体摄像元件和电子装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3412390B2 (ja) * 1996-03-18 2003-06-03 株式会社ニコン 光電変換装置
JPH10313426A (ja) * 1997-03-10 1998-11-24 Nikon Corp 動き検出用固体撮像装置
JP3219036B2 (ja) * 1997-11-11 2001-10-15 日本電気株式会社 固体撮像装置
JP4192305B2 (ja) * 1998-08-27 2008-12-10 株式会社ニコン 固体撮像素子
JP2003258234A (ja) * 2002-02-28 2003-09-12 Sony Corp 固体撮像素子および固体撮像素子の駆動方法
JP4453306B2 (ja) 2003-09-04 2010-04-21 ソニー株式会社 固体撮像素子および固体撮像素子の駆動方法
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP4194544B2 (ja) 2003-12-05 2008-12-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP4935046B2 (ja) * 2005-10-19 2012-05-23 セイコーエプソン株式会社 固体撮像素子
JP4774311B2 (ja) * 2006-02-17 2011-09-14 富士フイルム株式会社 固体撮像素子及びその駆動方法並びに撮像装置
US20070205354A1 (en) * 2006-03-06 2007-09-06 Micron Technology, Inc. Image sensor light shield
JP2009026892A (ja) 2007-07-18 2009-02-05 Nikon Corp 固体撮像素子
JP2009130679A (ja) 2007-11-26 2009-06-11 Sony Corp 固体撮像素子、固体撮像素子の駆動方法および撮像装置
JP2010034512A (ja) * 2008-07-01 2010-02-12 Fujifilm Corp 固体撮像素子及び撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102202189A (zh) * 2010-03-25 2011-09-28 索尼公司 固体摄像装置和电子装置
US20110241089A1 (en) * 2010-03-31 2011-10-06 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
JP2011222708A (ja) * 2010-04-08 2011-11-04 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
CN202395874U (zh) * 2010-12-15 2012-08-22 索尼公司 固体摄像元件和电子装置

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104756254A (zh) * 2012-12-17 2015-07-01 株式会社电装 光传感器
CN104756254B (zh) * 2012-12-17 2017-05-17 株式会社电装 光传感器
CN104009051A (zh) * 2013-02-22 2014-08-27 索尼公司 图像传感器和电子装置
CN104009051B (zh) * 2013-02-22 2020-09-11 索尼半导体解决方案公司 图像传感器和电子装置
CN103491324B (zh) * 2013-09-29 2016-04-20 长春长光辰芯光电技术有限公司 高速全局快门图像传感器像素及其像素信号的采样方法
CN103491324A (zh) * 2013-09-29 2014-01-01 长春长光辰芯光电技术有限公司 高速全局快门图像传感器像素及其像素信号的采样方法
CN104917942B (zh) * 2014-03-14 2018-04-06 佳能株式会社 图像捕获装置和图像捕获系统
CN104917942A (zh) * 2014-03-14 2015-09-16 佳能株式会社 图像捕获装置和图像捕获系统
US9986191B2 (en) 2014-03-14 2018-05-29 Canon Kabushiki Kaisha Image capturing apparatus and image capturing system
US12445750B2 (en) 2014-12-18 2025-10-14 Sony Group Corporation Solid-state image sensor, imaging device, and electronic device
CN105934826B (zh) * 2014-12-18 2021-07-20 索尼公司 固态图像传感器、成像装置和电子设备
US11678088B2 (en) 2014-12-18 2023-06-13 Sony Corporation Solid-state image sensor, imaging device, and electronic device
US10999545B2 (en) 2014-12-18 2021-05-04 Sony Corporation Solid-state image sensor, imaging device, and electronic device
CN105934826A (zh) * 2014-12-18 2016-09-07 索尼公司 固态图像传感器、成像装置和电子设备
US10304895B2 (en) 2015-05-19 2019-05-28 Canon Kabushiki Kaisha Method for manufacturing solid-state image pickup apparatus, solid-state image pickup apparatus, and image pickup system including the same
CN106169490A (zh) * 2015-05-19 2016-11-30 佳能株式会社 固态图像拾取装置及其制造方法和包括它的图像拾取系统
CN106169489A (zh) * 2015-05-19 2016-11-30 佳能株式会社 固态成像设备、固态成像设备的制造方法以及成像系统
US10381389B2 (en) 2015-05-19 2019-08-13 Canon Kabushiki Kaisha Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
CN106169489B (zh) * 2015-05-19 2019-11-05 佳能株式会社 固态成像设备、固态成像设备的制造方法以及成像系统
CN113099140A (zh) * 2015-09-30 2021-07-09 株式会社尼康 摄像元件及电子相机
CN115472639A (zh) * 2015-10-26 2022-12-13 索尼半导体解决方案公司 光检测器件和电子装置
CN108701705A (zh) * 2016-03-15 2018-10-23 索尼公司 固态成像元件及其制造方法和电子设备
CN108701705B (zh) * 2016-03-15 2022-11-18 索尼公司 固态成像元件及其制造方法和电子设备
CN107833896A (zh) * 2016-09-15 2018-03-23 精工爱普生株式会社 固体摄像装置和电子设备
CN110036631A (zh) * 2016-09-29 2019-07-19 株式会社尼康 摄像元件和相机
US11812170B2 (en) 2016-12-09 2023-11-07 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic device
CN110050345B (zh) * 2016-12-09 2023-11-14 索尼半导体解决方案公司 固态图像拾取元件和电子装置
CN110050345A (zh) * 2016-12-09 2019-07-23 索尼半导体解决方案公司 固态图像拾取元件和电子装置
CN109148497A (zh) * 2018-07-19 2019-01-04 上海集成电路研发中心有限公司 一种防止寄生光响应的全局像元结构及形成方法
CN114731376A (zh) * 2019-12-02 2022-07-08 索尼半导体解决方案公司 固体摄像装置和电子设备
CN114830338A (zh) * 2019-12-20 2022-07-29 松下知识产权经营株式会社 固体摄像元件

Also Published As

Publication number Publication date
US10229941B2 (en) 2019-03-12
JP5637384B2 (ja) 2014-12-10
US8884206B2 (en) 2014-11-11
US20140319323A1 (en) 2014-10-30
JP2012129798A (ja) 2012-07-05
US20120153126A1 (en) 2012-06-21
CN202395874U (zh) 2012-08-22

Similar Documents

Publication Publication Date Title
CN202395874U (zh) 固体摄像元件和电子装置
US12177584B2 (en) Solid-state imaging device, method of driving the same, and electronic apparatus
CN102208423B (zh) 固体摄像装置、制造固体摄像装置的方法和电子设备
US8890982B2 (en) Solid-state imaging device and driving method as well as electronic apparatus
US8785834B2 (en) Solid-state image sensor, control method for the same, and electronic device
JP5641287B2 (ja) 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
US10593721B2 (en) Solid-state imaging element, method of manufacturing the same, and imaging device
US9571772B2 (en) Solid-state imaging device, driving method and electronic apparatus with electric charge transfer using an intermediate potential
CN103475829A (zh) 固态图像传感器、其控制方法以及电子设备
US20140014816A1 (en) Imaging element and imaging method
JP2011216961A (ja) 固体撮像装置、固体撮像装置の駆動方法、および、電子機器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120704