JPWO2021125155A1 - - Google Patents
Info
- Publication number
- JPWO2021125155A1 JPWO2021125155A1 JP2021565584A JP2021565584A JPWO2021125155A1 JP WO2021125155 A1 JPWO2021125155 A1 JP WO2021125155A1 JP 2021565584 A JP2021565584 A JP 2021565584A JP 2021565584 A JP2021565584 A JP 2021565584A JP WO2021125155 A1 JPWO2021125155 A1 JP WO2021125155A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019230417 | 2019-12-20 | ||
| PCT/JP2020/046701 WO2021125155A1 (ja) | 2019-12-20 | 2020-12-15 | 固体撮像素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021125155A1 true JPWO2021125155A1 (enExample) | 2021-06-24 |
Family
ID=76477549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021565584A Withdrawn JPWO2021125155A1 (enExample) | 2019-12-20 | 2020-12-15 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20220310684A1 (enExample) |
| JP (1) | JPWO2021125155A1 (enExample) |
| CN (1) | CN114830338A (enExample) |
| WO (1) | WO2021125155A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12417615B2 (en) | 2023-05-16 | 2025-09-16 | Bank Of America Corporation | System and method for consolidation of alerts and events using image matching of heatmap descriptions of infrastructure status |
| US12505003B2 (en) | 2023-05-17 | 2025-12-23 | Bank Of America Corporation | System and method for multi image matching for outage prediction, prevention, and mitigation for technology infrastructure using hybrid deep learning |
| US12373271B2 (en) | 2023-05-25 | 2025-07-29 | Bank Of America Corporation | System and method for matching multiple featureless images across a time series for outage prediction and prevention |
| CN120239349A (zh) * | 2023-12-20 | 2025-07-01 | 格科微电子（上海）有限公司 | 一种图像传感器及其制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040113151A1 (en) * | 2002-10-11 | 2004-06-17 | Kabushiki Kaisha Toshiba | CMOS image sensor |
| CN100442530C (zh) * | 2005-02-21 | 2008-12-10 | 索尼株式会社 | 固态成像器件及其驱动方法和照相装置 |
| US7800146B2 (en) * | 2005-08-26 | 2010-09-21 | Aptina Imaging Corporation | Implanted isolation region for imager pixels |
| JP2008186894A (ja) * | 2007-01-29 | 2008-08-14 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
| JP2012019169A (ja) * | 2010-07-09 | 2012-01-26 | Panasonic Corp | 固体撮像装置 |
| JP5637384B2 (ja) * | 2010-12-15 | 2014-12-10 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
| DE112018002674B4 (de) * | 2017-05-25 | 2024-11-28 | Panasonic Intellectual Property Management Co., Ltd. | Festkörper-Bildsensor und Abbildungsvorrichtung |
| CN108987420B (zh) * | 2017-06-05 | 2023-12-12 | 松下知识产权经营株式会社 | 摄像装置 |
-
2020
- 2020-12-15 JP JP2021565584A patent/JPWO2021125155A1/ja not_active Withdrawn
- 2020-12-15 CN CN202080087479.0A patent/CN114830338A/zh active Pending
- 2020-12-15 WO PCT/JP2020/046701 patent/WO2021125155A1/ja not_active Ceased
-
2022
- 2022-06-14 US US17/840,139 patent/US20220310684A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20220310684A1 (en) | 2022-09-29 |
| CN114830338A (zh) | 2022-07-29 |
| WO2021125155A1 (ja) | 2021-06-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220304 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20230313 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230322 |