JP5635985B2 - 金属ケイ素から非金属不純物を除去する方法 - Google Patents

金属ケイ素から非金属不純物を除去する方法 Download PDF

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Publication number
JP5635985B2
JP5635985B2 JP2011520323A JP2011520323A JP5635985B2 JP 5635985 B2 JP5635985 B2 JP 5635985B2 JP 2011520323 A JP2011520323 A JP 2011520323A JP 2011520323 A JP2011520323 A JP 2011520323A JP 5635985 B2 JP5635985 B2 JP 5635985B2
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JP
Japan
Prior art keywords
silicon
halogen element
metallic
solid
metal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2011520323A
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English (en)
Japanese (ja)
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JP2011529841A5 (enExample
JP2011529841A (ja
Inventor
セイエト−ヤファト モッセニ−アラー，
セイエト−ヤファト モッセニ−アラー，
クリスチャン バオホ，
クリスチャン バオホ，
トラルフ ゲーベル，
トラルフ ゲーベル，
ルーメン デルチェフ，
ルーメン デルチェフ，
ゲルト リッポルト，
ゲルト リッポルト，
マティアス ホイアー，
マティアス ホイアー，
フリッツ キルシュト，
フリッツ キルシュト，
カメル ウナディエラ，
カメル ウナディエラ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CaliSolar GmbH
Spawnt Private SARL
Original Assignee
Spawnt Private SARL
BerlinSolar GmbH
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Publication of JP2011529841A publication Critical patent/JP2011529841A/ja
Publication of JP2011529841A5 publication Critical patent/JP2011529841A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
JP2011520323A 2008-08-01 2009-07-29 金属ケイ素から非金属不純物を除去する方法 Expired - Fee Related JP5635985B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008036143A DE102008036143A1 (de) 2008-08-01 2008-08-01 Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
DE102008036143.7 2008-08-01
PCT/DE2009/001059 WO2010012273A2 (de) 2008-08-01 2009-07-29 Verfahren zum entfernen von nichtmetallischen verunreinigungen aus metallurgischem silicium

Publications (3)

Publication Number Publication Date
JP2011529841A JP2011529841A (ja) 2011-12-15
JP2011529841A5 JP2011529841A5 (enExample) 2012-09-06
JP5635985B2 true JP5635985B2 (ja) 2014-12-03

Family

ID=41461624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011520323A Expired - Fee Related JP5635985B2 (ja) 2008-08-01 2009-07-29 金属ケイ素から非金属不純物を除去する方法

Country Status (5)

Country Link
US (1) US9327987B2 (enExample)
EP (1) EP2321220B1 (enExample)
JP (1) JP5635985B2 (enExample)
DE (1) DE102008036143A1 (enExample)
WO (1) WO2010012273A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
US12338127B2 (en) 2019-04-30 2025-06-24 Wacker Chemie Ag Method for refining crude silicon melts using a particulate mediator
ES2941508T3 (es) * 2019-04-30 2023-05-23 Wacker Chemie Ag Procedimiento para el refinado de masas fundidas de silicio en bruto por medio de un mediador particulado
CN111675222B (zh) * 2020-07-13 2022-08-09 昆明理工大学 一种利用低品位硅石生产工业硅的方法
CN114720627A (zh) * 2022-04-06 2022-07-08 江苏南大光电材料股份有限公司 一种滴定检测硅前驱体中卤素相对含量方法

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BE536407A (enExample) 1954-03-12
AT200106B (de) 1956-12-24 1958-10-25 Degussa Verfahren zur Herstellung von reinstem Silizium
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FR2430917A1 (fr) 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
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DE3635064A1 (de) 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
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DE3727647A1 (de) 1987-08-19 1989-03-02 Bayer Ag Verfahren zur abtrennung von verunreinigungen aus silicium
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Also Published As

Publication number Publication date
WO2010012273A3 (de) 2010-11-18
US20130171052A1 (en) 2013-07-04
EP2321220B1 (de) 2016-04-20
JP2011529841A (ja) 2011-12-15
WO2010012273A2 (de) 2010-02-04
US9327987B2 (en) 2016-05-03
DE102008036143A1 (de) 2010-02-04
EP2321220A2 (de) 2011-05-18

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