JP2011520763A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011520763A5 JP2011520763A5 JP2011510825A JP2011510825A JP2011520763A5 JP 2011520763 A5 JP2011520763 A5 JP 2011520763A5 JP 2011510825 A JP2011510825 A JP 2011510825A JP 2011510825 A JP2011510825 A JP 2011510825A JP 2011520763 A5 JP2011520763 A5 JP 2011520763A5
- Authority
- JP
- Japan
- Prior art keywords
- halogen
- containing silicon
- silicon according
- producing
- thermal decomposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 40
- 229910052710 silicon Inorganic materials 0.000 claims 40
- 239000010703 silicon Substances 0.000 claims 40
- 229910052736 halogen Inorganic materials 0.000 claims 39
- 150000002367 halogens Chemical class 0.000 claims 39
- 238000000034 method Methods 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 7
- 229920000548 poly(silane) polymer Polymers 0.000 claims 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims 4
- 239000000843 powder Substances 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- 125000004429 atom Chemical group 0.000 claims 2
- 150000002366 halogen compounds Chemical class 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 239000012298 atmosphere Substances 0.000 claims 1
- 238000005266 casting Methods 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000011856 silicon-based particle Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008025264.6 | 2008-05-27 | ||
| DE102008025264A DE102008025264A1 (de) | 2008-05-27 | 2008-05-27 | Granulares Silicium |
| DE102008025263.8 | 2008-05-27 | ||
| DE102008025263.8A DE102008025263B4 (de) | 2008-05-27 | 2008-05-27 | Verfahren zum Aufreinigen von metallurgischem Silicium |
| PCT/DE2009/000728 WO2009143825A2 (de) | 2008-05-27 | 2009-05-27 | Halogenidhaltiges silicium, verfahren zur herstellung desselben und verwendung desselben |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011520763A JP2011520763A (ja) | 2011-07-21 |
| JP2011520763A5 true JP2011520763A5 (enExample) | 2012-05-10 |
| JP5878013B2 JP5878013B2 (ja) | 2016-03-08 |
Family
ID=41119354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011510825A Expired - Fee Related JP5878013B2 (ja) | 2008-05-27 | 2009-05-27 | ハロゲン含有シリコン、その製造及び使用方法 |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US20110305619A1 (enExample) |
| EP (1) | EP2300368B1 (enExample) |
| JP (1) | JP5878013B2 (enExample) |
| KR (1) | KR101687420B1 (enExample) |
| CN (1) | CN102099290A (enExample) |
| AU (1) | AU2009253524B2 (enExample) |
| BR (1) | BRPI0912174A2 (enExample) |
| CA (1) | CA2726003C (enExample) |
| IL (1) | IL209580A (enExample) |
| MX (1) | MX2010013003A (enExample) |
| MY (1) | MY157133A (enExample) |
| RU (1) | RU2500618C2 (enExample) |
| TW (1) | TW201010941A (enExample) |
| WO (1) | WO2009143825A2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008036143A1 (de) * | 2008-08-01 | 2010-02-04 | Berlinsolar Gmbh | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
| DE102009056438B4 (de) | 2009-12-02 | 2013-05-16 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von Hexachlordisilan |
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
| DE102014109275A1 (de) | 2014-07-02 | 2016-01-07 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von Nanopartikeln, Nanopartikel und deren Verwendung |
| JP7068034B2 (ja) | 2018-05-18 | 2022-05-16 | 株式会社トクヤマ | シリコン微粒子及びその製造方法 |
| WO2020129499A1 (ja) * | 2018-12-21 | 2020-06-25 | 株式会社トクヤマ | シリコン微粒子及びその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE536407A (enExample) * | 1954-03-12 | |||
| US4374182A (en) * | 1980-07-07 | 1983-02-15 | Dow Corning Corporation | Preparation of silicon metal through polymer degradation |
| JPS62289224A (ja) * | 1986-06-06 | 1987-12-16 | Rikagaku Kenkyusho | レ−ザ−を用いたシリコンを主成分とする固体生成物の製造法 |
| EP0264722A3 (en) * | 1986-10-09 | 1989-07-12 | Mitsubishi Materials Corporation | Process for preparing amorphous silicon |
| JPS63225511A (ja) * | 1986-10-09 | 1988-09-20 | Mitsubishi Metal Corp | 非晶質シリコン粉末の製造方法 |
| DE3635064A1 (de) * | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
| NO180532C (no) * | 1994-09-01 | 1997-05-07 | Elkem Materials | Fremgangsmåte for fjerning av forurensninger fra smeltet silisium |
| DE102005024041A1 (de) * | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
| ES2834950T3 (es) * | 2017-02-28 | 2021-06-21 | Prec Group Limited | Bifidobacterium longum capaz de modular beneficiosamente la respuesta inmunitaria a la infección por virus respiratorio |
-
2009
- 2009-05-27 RU RU2010152679/05A patent/RU2500618C2/ru not_active IP Right Cessation
- 2009-05-27 BR BRPI0912174A patent/BRPI0912174A2/pt not_active IP Right Cessation
- 2009-05-27 CN CN2009801193418A patent/CN102099290A/zh active Pending
- 2009-05-27 WO PCT/DE2009/000728 patent/WO2009143825A2/de not_active Ceased
- 2009-05-27 KR KR1020107029324A patent/KR101687420B1/ko not_active Expired - Fee Related
- 2009-05-27 US US12/995,136 patent/US20110305619A1/en not_active Abandoned
- 2009-05-27 CA CA2726003A patent/CA2726003C/en not_active Expired - Fee Related
- 2009-05-27 EP EP09753541.3A patent/EP2300368B1/de not_active Not-in-force
- 2009-05-27 TW TW098117635A patent/TW201010941A/zh unknown
- 2009-05-27 MY MYPI2010005614A patent/MY157133A/en unknown
- 2009-05-27 JP JP2011510825A patent/JP5878013B2/ja not_active Expired - Fee Related
- 2009-05-27 AU AU2009253524A patent/AU2009253524B2/en not_active Ceased
- 2009-05-27 MX MX2010013003A patent/MX2010013003A/es active IP Right Grant
-
2010
- 2010-11-25 IL IL209580A patent/IL209580A/en not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101460398B (zh) | 通过闭合环路方法生产硅 | |
| JP5923106B2 (ja) | 窒化ホウ素粉末の連続的製造方法 | |
| JP5311930B2 (ja) | シリコンの製造方法 | |
| JP2011520763A5 (enExample) | ||
| US8236266B2 (en) | Method and apparatus for purifying metallurgical silicon for solar cells | |
| Radwan et al. | A modified direct nitridation method for formation of nano-AlN whiskers | |
| JP5878013B2 (ja) | ハロゲン含有シリコン、その製造及び使用方法 | |
| JP2014015339A (ja) | 炭化珪素粉末の製造方法 | |
| JP6017688B2 (ja) | シリコンを精製するための方向性凝固において有用なフラックス組成物 | |
| CN102874809A (zh) | 一种碳化硅复合粉体及其制备工艺 | |
| Lee et al. | Improvement of porous silicon carbide filters by growth of silicon carbide nanowires using a modified carbothermal reduction process | |
| Radwan et al. | Formation of aluminium nitride whiskers by direct nitridation | |
| US9327987B2 (en) | Process for removing nonmetallic impurities from metallurgical silicon | |
| JP2011529841A5 (enExample) | ||
| Paul et al. | Formation of AlN nanowires using Al powder | |
| JP4888777B2 (ja) | 水素貯蔵材料の製造方法 | |
| JP2016003157A (ja) | 多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化ケイ素粉末及びその製造方法、多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化ケイ素粉末含有スラリー、ならびに多結晶シリコンインゴット鋳造用鋳型及びその製造方法 | |
| JP6565232B2 (ja) | 銀の回収方法 | |
| Morito et al. | Synthesis of SiC via low-temperature heating of graphite and Si with Na flux | |
| JP2015113252A (ja) | 亜鉛還元法による多結晶シリコンの製造に用いられる反応容器 | |
| TW201139271A (en) | Process for coarse decarburization of a silicon melt | |
| JP2021147283A (ja) | 複合粒子およびその製造方法 | |
| TW201141785A (en) | Process for decarburization of a silicon melt | |
| Li et al. | Research of short-flow-route processes for magnesium alloys prepared by crystalline magnesium | |
| JPS62202815A (ja) | 高純度硼素微粉末の製造方法 |