JP5609025B2 - エピタキシャルシリコンウェーハの製造方法 - Google Patents

エピタキシャルシリコンウェーハの製造方法 Download PDF

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Publication number
JP5609025B2
JP5609025B2 JP2009153496A JP2009153496A JP5609025B2 JP 5609025 B2 JP5609025 B2 JP 5609025B2 JP 2009153496 A JP2009153496 A JP 2009153496A JP 2009153496 A JP2009153496 A JP 2009153496A JP 5609025 B2 JP5609025 B2 JP 5609025B2
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Japan
Prior art keywords
silicon
crystal substrate
silicon crystal
epitaxial
wafer
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JP2009153496A
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English (en)
Japanese (ja)
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JP2011009614A (ja
JP2011009614A5 (enExample
Inventor
正 川島
正 川島
吉川　雅博
雅博 吉川
井上　聡
聡 井上
芳也 吉田
芳也 吉田
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Sumco Corp
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Sumco Corp
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Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009153496A priority Critical patent/JP5609025B2/ja
Priority to DE112010002747.1T priority patent/DE112010002747B4/de
Priority to PCT/JP2010/059089 priority patent/WO2011001770A1/ja
Priority to US13/378,562 priority patent/US8659020B2/en
Publication of JP2011009614A publication Critical patent/JP2011009614A/ja
Publication of JP2011009614A5 publication Critical patent/JP2011009614A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009153496A 2009-06-29 2009-06-29 エピタキシャルシリコンウェーハの製造方法 Active JP5609025B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009153496A JP5609025B2 (ja) 2009-06-29 2009-06-29 エピタキシャルシリコンウェーハの製造方法
DE112010002747.1T DE112010002747B4 (de) 2009-06-29 2010-05-28 Verfahren zur Herstellung eines Siliziumepitaxialwafers
PCT/JP2010/059089 WO2011001770A1 (ja) 2009-06-29 2010-05-28 エピタキシャルシリコンウェーハとその製造方法
US13/378,562 US8659020B2 (en) 2009-06-29 2010-05-28 Epitaxial silicon wafer and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009153496A JP5609025B2 (ja) 2009-06-29 2009-06-29 エピタキシャルシリコンウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2011009614A JP2011009614A (ja) 2011-01-13
JP2011009614A5 JP2011009614A5 (enExample) 2012-03-01
JP5609025B2 true JP5609025B2 (ja) 2014-10-22

Family

ID=43410851

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Application Number Title Priority Date Filing Date
JP2009153496A Active JP5609025B2 (ja) 2009-06-29 2009-06-29 エピタキシャルシリコンウェーハの製造方法

Country Status (4)

Country Link
US (1) US8659020B2 (enExample)
JP (1) JP5609025B2 (enExample)
DE (1) DE112010002747B4 (enExample)
WO (1) WO2011001770A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5338559B2 (ja) * 2009-08-19 2013-11-13 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP6009237B2 (ja) * 2012-06-18 2016-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルシリコンウェーハの製造方法、および、エピタキシャルシリコンウェーハ
JP5845143B2 (ja) 2012-06-29 2016-01-20 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、および、エピタキシャルシリコンウェーハ
US10233562B2 (en) * 2013-04-24 2019-03-19 Sumco Techxiv Corporation Method for producing single crystal, and method for producing silicon wafer
JP6372709B2 (ja) * 2016-04-20 2018-08-15 信越半導体株式会社 エピタキシャルウェーハの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5553566A (en) * 1995-06-22 1996-09-10 Motorola Inc. Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates
JPH10223641A (ja) 1996-12-03 1998-08-21 Sumitomo Sitix Corp 半導体シリコンエピタキシャルウェーハ及び半導体デバイスの製造方法
JP3482982B2 (ja) * 1996-12-12 2004-01-06 三菱住友シリコン株式会社 Ｅｇ層付きエピタキシャルウェーハの製造方法
JP2000031153A (ja) 1998-07-13 2000-01-28 Shin Etsu Handotai Co Ltd Ｓｉウエーハ及びその製造方法
JP4442955B2 (ja) * 1999-07-28 2010-03-31 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP4070949B2 (ja) * 1999-09-29 2008-04-02 三益半導体工業株式会社 ウェーハ、エピタキシャルウェーハ及びそれらの製造方法
KR100774066B1 (ko) 1999-09-29 2007-11-06 신에쯔 한도타이 가부시키가이샤 웨이퍼, 에피택셜웨이퍼 및 이들의 제조방법
JP2003188107A (ja) * 2001-12-19 2003-07-04 Shin Etsu Handotai Co Ltd 半導体エピタキシャルウエーハの製造方法および半導体エピタキシャルウエーハ
JP2006073580A (ja) * 2004-08-31 2006-03-16 Sumco Corp シリコンエピタキシャルウェーハ及びその製造方法
JP4516096B2 (ja) 2007-05-31 2010-08-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
JP5509581B2 (ja) * 2008-11-27 2014-06-04 信越半導体株式会社 半導体ウェーハの評価方法
JP5246065B2 (ja) * 2009-06-29 2013-07-24 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハとその製造方法

Also Published As

Publication number Publication date
JP2011009614A (ja) 2011-01-13
WO2011001770A1 (ja) 2011-01-06
DE112010002747T5 (de) 2013-09-26
US8659020B2 (en) 2014-02-25
US20120112190A1 (en) 2012-05-10
DE112010002747B4 (de) 2020-12-24

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