JP5607686B2 - 放射線像変換パネル及び放射線イメージセンサ - Google Patents
放射線像変換パネル及び放射線イメージセンサ Download PDFInfo
- Publication number
- JP5607686B2 JP5607686B2 JP2012164929A JP2012164929A JP5607686B2 JP 5607686 B2 JP5607686 B2 JP 5607686B2 JP 2012164929 A JP2012164929 A JP 2012164929A JP 2012164929 A JP2012164929 A JP 2012164929A JP 5607686 B2 JP5607686 B2 JP 5607686B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- radiation image
- scintillator
- dielectric
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005855 radiation Effects 0.000 title claims description 99
- 238000006243 chemical reaction Methods 0.000 title claims description 37
- 239000010408 film Substances 0.000 claims description 185
- 239000000758 substrate Substances 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 229910052782 aluminium Inorganic materials 0.000 claims description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 43
- 230000001681 protective effect Effects 0.000 claims description 39
- 230000003287 optical effect Effects 0.000 claims description 26
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 238000002310 reflectometry Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 125000006839 xylylene group Chemical group 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000001579 optical reflectometry Methods 0.000 description 6
- -1 polyparaxylylene Polymers 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000011976 chest X-ray Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measurement Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Description
※
Claims (7)
- 支持体上に放射線像を光像に変換する変換部を備える放射線像変換パネルにおいて、
前記変換部は、蒸着により形成されるTlがドープされたCsIの複数の針状シンチレータからなり、耐湿保護膜によって密封されており、
前記支持体は、
金属反射体と、
前記金属反射体に接してその上に形成された第1の誘電体層と、前記第1の誘電体層上に形成された前記変換部から出力される光像の光に対して前記第1の誘電体層より屈折率の高い第2の誘電体層との2層からなり、全体の厚さが1μm以下で前記シンチレータが発する光の中心発光波長である波長560nmの光に対する反射率が90%以上の誘電体膜ミラーと、
前記誘電体膜ミラー上に形成される透明有機膜と
を備えており、前記透明有機膜側に前記変換部が形成され、前記耐湿保護膜と前記透明有機膜はいずれも前記第1の誘電体層より屈折率が高く、前記第2の誘電体層より屈折率の低いキシリレン系材料からなることを特徴とする放射線像変換パネル。 - 前記第1の誘電体層がSiO2であり、前記第2の誘電体層は、TiO2、Nb2O5、Ta2O5、HfO2、ZrO2のいずれかであることを特徴とする請求項1記載の放射線像変換パネル。
- 前記金属反射体は、金属薄膜であることを特徴とする請求項1または2のいずれかに記載の放射線像変換パネル。
- 前記金属反射体を支持する支持基板をさらに備えていることを特徴とする請求項3記載の放射線像変換パネル。
- 前記金属反射体は,金属基板であることを特徴とする請求項1または2のいずれかに記載の放射線像変換パネル。
- 前記金属反射体は、アルミニウム、銀または金からなることを特徴とする請求項3ないし5のいずれかに記載の放射線像変換パネル。
- 請求項1ないし6のいずれかに記載の放射線像変換パネルと、
前記変換部から出力される光像を電気信号に変換する撮像素子と、
を備える放射線イメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/976,323 | 2007-10-23 | ||
US11/976,323 US7732788B2 (en) | 2007-10-23 | 2007-10-23 | Radiation image converting panel, scintillator panel and radiation image sensor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007327886A Division JP5198842B2 (ja) | 2007-10-23 | 2007-12-19 | 放射線像変換パネル及び放射線イメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012211925A JP2012211925A (ja) | 2012-11-01 |
JP5607686B2 true JP5607686B2 (ja) | 2014-10-15 |
Family
ID=40562528
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007327886A Active JP5198842B2 (ja) | 2007-10-23 | 2007-12-19 | 放射線像変換パネル及び放射線イメージセンサ |
JP2012164929A Active JP5607686B2 (ja) | 2007-10-23 | 2012-07-25 | 放射線像変換パネル及び放射線イメージセンサ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007327886A Active JP5198842B2 (ja) | 2007-10-23 | 2007-12-19 | 放射線像変換パネル及び放射線イメージセンサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US7732788B2 (ja) |
JP (2) | JP5198842B2 (ja) |
KR (1) | KR101022150B1 (ja) |
CN (1) | CN101419289B (ja) |
CA (1) | CA2633665C (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4377596B2 (ja) * | 2003-03-10 | 2009-12-02 | 浜松ホトニクス株式会社 | シンチレータ部材およびその製造方法、並びにシンチレータユニット |
US8106363B2 (en) * | 2008-04-17 | 2012-01-31 | Carestream Health, Inc. | Digital radiography panel with pressure-sensitive adhesive for optical coupling between scintillator screen and detector and method of manufacture |
US7977646B2 (en) * | 2008-04-17 | 2011-07-12 | Saint-Gobain Ceramics & Plastics, Inc. | Scintillation detector reflector |
JPWO2011010482A1 (ja) * | 2009-07-24 | 2012-12-27 | コニカミノルタエムジー株式会社 | 放射線画像検出器 |
US8399841B2 (en) * | 2009-12-07 | 2013-03-19 | Carestream Health, Inc. | Digital radiographic detector with bonded phosphor layer |
US8399842B2 (en) * | 2009-12-07 | 2013-03-19 | Carestream Health, Inc. | Digital radiographic detector with bonded phosphor layer |
JP2011137665A (ja) * | 2009-12-26 | 2011-07-14 | Canon Inc | シンチレータパネル及び放射線撮像装置とその製造方法、ならびに放射線撮像システム |
JP5569775B2 (ja) * | 2010-01-15 | 2014-08-13 | 日立金属株式会社 | 放射線検出器 |
JP2011179855A (ja) * | 2010-02-26 | 2011-09-15 | Mitsubishi Electric Corp | 放射線検出器 |
JP5649872B2 (ja) | 2010-08-24 | 2015-01-07 | 浜松ホトニクス株式会社 | 放射線検出器の製造方法 |
JP5473835B2 (ja) * | 2010-08-31 | 2014-04-16 | 富士フイルム株式会社 | 放射線検出器、放射線画像撮影装置及び放射線検出器の製造方法 |
KR101202777B1 (ko) * | 2011-05-26 | 2012-11-19 | 신동준 | 회절격자를 이용한 디지털 이미지 검출기 및 검출방법 |
JP5767512B2 (ja) * | 2011-06-07 | 2015-08-19 | キヤノン株式会社 | 放射線検出素子及び放射線検出器 |
US9513377B2 (en) * | 2011-10-24 | 2016-12-06 | Helmholtz Zentrum Muenchen Deutsches Forschungszentrum Fuer Gesundheit Und Umwelt (Gmbh) | Method for measuring radiation by means of an electronic terminal having a digital camera |
US8895932B2 (en) | 2012-08-28 | 2014-11-25 | Konica Minolta, Inc. | Scintillator plate and radiation detection panel |
WO2014109691A1 (en) * | 2013-01-08 | 2014-07-17 | Scint-X Ab | X-ray scintillator containing a multi-layered coating |
US9405083B2 (en) * | 2013-05-20 | 2016-08-02 | Lawrence Livermore National Security, Llc | Omnidirectional optical waveguide |
DE102014224449A1 (de) * | 2014-11-28 | 2016-06-02 | Forschungszentrum Jülich GmbH | Szintillationsdetektor mit hoher Zählrate |
US10809393B2 (en) * | 2015-04-23 | 2020-10-20 | Fermi Research Alliance, Llc | Monocrystal-based microchannel plate image intensifier |
JP6504997B2 (ja) | 2015-11-05 | 2019-04-24 | 浜松ホトニクス株式会社 | 放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 |
JP6717126B2 (ja) * | 2016-09-01 | 2020-07-01 | コニカミノルタ株式会社 | 放射線画像検出器 |
CN106725574A (zh) * | 2017-01-17 | 2017-05-31 | 孙红岩 | 一种正电子发射断层扫描成像系统双层晶体探测器 |
CN108877980A (zh) * | 2018-06-22 | 2018-11-23 | 中国工程物理研究院核物理与化学研究所 | 一种辐伏类同位素电池用的光导组件 |
CN110687578B (zh) * | 2019-11-29 | 2023-05-30 | 四川省工程装备设计研究院有限责任公司 | 一种具有高出光率的掺铊碘化铯闪烁晶体辐射探测器 |
CN110687579B (zh) * | 2019-11-29 | 2022-12-30 | 陕西秦洲核与辐射安全技术有限公司 | 一种具有高出光率的硅酸钇镥闪烁晶体辐射探测器 |
CN110687575B (zh) * | 2019-11-29 | 2022-12-27 | 陕西秦洲核与辐射安全技术有限公司 | 一种具有高出光率的掺铈硅酸钆闪烁晶体辐射探测器 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5689702A (en) | 1979-12-21 | 1981-07-21 | Sumitomo Electric Ind Ltd | Laser beam reflecting mirror |
JPS6173901A (ja) | 1984-09-19 | 1986-04-16 | Fujitsu Ltd | 赤外線検知装置用金属鏡の製造方法 |
DE3578359D1 (de) * | 1984-12-17 | 1990-07-26 | Konishiroku Photo Ind | Schirm zum speichern eines strahlungsbildes. |
US4873708A (en) * | 1987-05-11 | 1989-10-10 | General Electric Company | Digital radiographic imaging system and method therefor |
JP2677818B2 (ja) | 1987-08-17 | 1997-11-17 | コニカ株式会社 | 放射線画像変換パネル |
US5179284A (en) * | 1991-08-21 | 1993-01-12 | General Electric Company | Solid state radiation imager having a reflective and protective coating |
US5949848A (en) | 1996-07-19 | 1999-09-07 | Varian Assocaites, Inc. | X-ray imaging apparatus and method using a flat amorphous silicon imaging panel |
KR100688680B1 (ko) | 1998-06-18 | 2007-03-02 | 하마마츠 포토닉스 가부시키가이샤 | 신틸레이터 패널 및 방사선 이미지 센서 |
KR100697493B1 (ko) * | 1998-06-18 | 2007-03-20 | 하마마츠 포토닉스 가부시키가이샤 | 신틸레이터 패널 |
US7034306B2 (en) * | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
AU4168199A (en) * | 1998-06-18 | 2000-01-05 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor, and method for producing the same |
CN1140815C (zh) * | 1998-06-18 | 2004-03-03 | 浜松光子学株式会社 | 闪烁器仪表盘、放射线图象传感器及其制造方法 |
JP4057316B2 (ja) * | 2002-03-07 | 2008-03-05 | 浜松ホトニクス株式会社 | シンチレータパネルおよびその製造方法 |
DE69937125T2 (de) * | 1999-04-09 | 2008-06-19 | Hamamatsu Photonics K.K., Hamamatsu | Szintillatorplatte und strahlungsbildsensor |
CN101290353B (zh) * | 1999-04-16 | 2011-05-18 | 浜松光子学株式会社 | 闪烁器面板和放射线图象传感器 |
JP3126715B2 (ja) | 1999-04-16 | 2001-01-22 | 浜松ホトニクス株式会社 | シンチレータパネル及び放射線イメージセンサ |
EP2267485B1 (en) | 2000-09-11 | 2013-05-15 | Hamamatsu Photonics K.K. | Method for making a scintillator panel and a radiation image sensor |
USRE42281E1 (en) | 2000-09-11 | 2011-04-12 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
DE20021657U1 (de) * | 2000-12-20 | 2002-05-02 | Alanod Al Veredlung Gmbh | Abdeckteil für eine Lichtquelle |
DE20021660U1 (de) * | 2000-12-20 | 2002-05-02 | Alanod Al Veredlung Gmbh | Verbundmaterial |
US6835936B2 (en) * | 2001-02-07 | 2004-12-28 | Canon Kabushiki Kaisha | Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system |
US6652996B2 (en) * | 2002-01-31 | 2003-11-25 | Eastman Kodak Company | Radiographic phosphor panel having improved speed and sharpness |
JP3828023B2 (ja) * | 2002-03-05 | 2006-09-27 | 富士写真フイルム株式会社 | 蓄積性蛍光体パネル |
JP2003262700A (ja) | 2002-03-08 | 2003-09-19 | Konica Corp | 放射線画像変換パネル及び放射線画像変換パネルの作製方法 |
JP2003279695A (ja) * | 2002-03-26 | 2003-10-02 | Fuji Photo Film Co Ltd | 放射線像変換パネル |
US7618511B2 (en) * | 2003-03-07 | 2009-11-17 | Hamamatsu Photonics K.K. | Scintillator panel and method of manufacturing radiation image sensor |
JP2004294137A (ja) | 2003-03-26 | 2004-10-21 | Konica Minolta Holdings Inc | 放射線像変換パネル及びその製造方法 |
JP2004325126A (ja) | 2003-04-22 | 2004-11-18 | Canon Inc | 放射線検出装置 |
JP2005091221A (ja) | 2003-09-18 | 2005-04-07 | Fuji Photo Film Co Ltd | 放射線像変換器 |
JP2005172511A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 放射線検出装置、その製造方法、および放射線撮像システム |
JP2005181220A (ja) * | 2003-12-22 | 2005-07-07 | Fuji Photo Film Co Ltd | 放射線像変換パネル |
JP4594188B2 (ja) | 2004-08-10 | 2010-12-08 | キヤノン株式会社 | 放射線検出装置及び放射線検出システム |
US20060060792A1 (en) * | 2004-09-22 | 2006-03-23 | Fuji Photo Film Co., Ltd. | Radiographic image conversion panel and method of manufacturing the same |
JP2006119124A (ja) | 2004-09-22 | 2006-05-11 | Fuji Photo Film Co Ltd | 放射線像変換パネルおよびその製造方法 |
JP2006113007A (ja) | 2004-10-18 | 2006-04-27 | Konica Minolta Medical & Graphic Inc | 放射線画像変換パネル |
JPWO2006049183A1 (ja) | 2004-11-01 | 2008-05-29 | マークテクノロジー株式会社 | 放射線画像撮像装置 |
JP2006189377A (ja) | 2005-01-07 | 2006-07-20 | Canon Inc | シンチレータパネル、放射線検出装置、及び放射線検出システム |
JP2006220439A (ja) | 2005-02-08 | 2006-08-24 | Canon Inc | シンチレータパネル、放射線検出装置及びその製造方法 |
JP2006267013A (ja) | 2005-03-25 | 2006-10-05 | Fuji Photo Film Co Ltd | 輝尽性蛍光体パネル及び輝尽性蛍光体パネルの製造方法 |
JP2007040836A (ja) | 2005-08-03 | 2007-02-15 | Fujifilm Corp | 放射線像変換パネル |
RU2298813C1 (ru) | 2005-12-26 | 2007-05-10 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт импульсной техники" (ФГУП НИИИТ) | Волоконно-оптическое устройство для визуализации распределения плотности потока импульсного ионизирующего излучения |
KR100745991B1 (ko) | 2006-08-11 | 2007-08-06 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
-
2007
- 2007-10-23 US US11/976,323 patent/US7732788B2/en active Active
- 2007-12-19 JP JP2007327886A patent/JP5198842B2/ja active Active
-
2008
- 2008-06-05 CA CA2633665A patent/CA2633665C/en active Active
- 2008-06-12 KR KR1020080055235A patent/KR101022150B1/ko active IP Right Grant
- 2008-06-16 CN CN2008101099998A patent/CN101419289B/zh active Active
-
2012
- 2012-07-25 JP JP2012164929A patent/JP5607686B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN101419289B (zh) | 2012-01-18 |
JP5198842B2 (ja) | 2013-05-15 |
JP2009103676A (ja) | 2009-05-14 |
CN101419289A (zh) | 2009-04-29 |
KR101022150B1 (ko) | 2011-03-17 |
KR20090041306A (ko) | 2009-04-28 |
JP2012211925A (ja) | 2012-11-01 |
US7732788B2 (en) | 2010-06-08 |
CA2633665A1 (en) | 2009-04-23 |
CA2633665C (en) | 2012-02-21 |
US20090101844A1 (en) | 2009-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5607686B2 (ja) | 放射線像変換パネル及び放射線イメージセンサ | |
US7812315B2 (en) | Radiation image conversion panel, scintillator panel, and radiation image sensor | |
JP4800434B2 (ja) | シンチレータパネル、放射線イメージセンサの製造方法 | |
WO2002023220A1 (fr) | Panneau de scintillateur, capteur d'images radiographiques et procedes de production | |
US8598532B2 (en) | Radiation conversion elements with reflectors for radiological imaging apparatus | |
US7465932B1 (en) | Radiation image conversion panel, scintillator panel, and radiation image sensor | |
JP2007271504A (ja) | シンチレータパネル、平面検出器および撮影装置 | |
US7741619B2 (en) | Scintillator panel for radiation, and flat panel detector | |
TWI699547B (zh) | 放射線影像變換面板、放射線影像變換面板之製造方法、放射線影像感測器及放射線影像感測器之製造方法 | |
JP2002333480A (ja) | シンチレータパネルおよびそれを用いた放射線検出器 | |
EP3062127B1 (en) | Radiation image converting panel and radiation image sensor | |
US11774607B2 (en) | Scintillator panel and radiation imaging apparatus | |
KR101405536B1 (ko) | 직접 방식의 신틸레이터 패널 및 그 제조 방법 | |
JP6643098B2 (ja) | 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120822 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120822 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140826 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140828 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5607686 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |