JP2009103676A - 放射線像変換パネル及び放射線イメージセンサ - Google Patents
放射線像変換パネル及び放射線イメージセンサ Download PDFInfo
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- JP2009103676A JP2009103676A JP2007327886A JP2007327886A JP2009103676A JP 2009103676 A JP2009103676 A JP 2009103676A JP 2007327886 A JP2007327886 A JP 2007327886A JP 2007327886 A JP2007327886 A JP 2007327886A JP 2009103676 A JP2009103676 A JP 2009103676A
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- 229910052782 aluminium Inorganic materials 0.000 claims description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 43
- 230000003287 optical effect Effects 0.000 claims description 26
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 25
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- 239000010409 thin film Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Measurement Of Radiation (AREA)
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- Apparatus For Radiation Diagnosis (AREA)
Abstract
【解決手段】 本発明に係る放射線像変換パネルは、金属反射体上に誘電体多層膜を設けた支持体上に放射線画像を光画像へ変換する変換部を形成したものであり、この誘電体多層膜は、少なくとも金属反射体に接する第1の誘電体層と、この第1の誘電体層上に形成され、変換部が発する光に対して第1の誘電体層より屈折率の高い第2の誘電体層とを備えている。
【選択図】 図1
Description
Claims (12)
- 支持体上に放射線像を光像に変換する変換部を備える放射線像変換パネルにおいて、
前記支持体は、
金属反射体と、
前記金属反射体に接してその上に形成された第1の誘電体層と、前記第1の誘電体層上に形成された前記変換部から出力される光像の光に対して前記第1の誘電体層より屈折率の高い第2の誘電体層とを少なくとも備える誘電体膜ミラーと、
を備えており、前記誘電体膜ミラー側に前記変換部が形成されていることを特徴とする放射線像変換パネル。 - 前記変換部は、複数の針状シンチレータからなることを特徴とする請求項1記載の放射線像変換パネル。
- 前記第1の誘電体層がSiO2を含み、前記第2の誘電体層は、TiO2、Nb2O5、Ta2O5、HfO2、ZrO2のうち少なくとも1種類の材料を含むことを特徴とする請求項1または2に記載の放射線像変換パネル。
- 前記誘電体膜ミラーは、前記第1の誘電体層と、前記第2の誘電体層を交互に3層以上積層してなることを特徴とする請求項1ないし3のいずれかに記載の放射線像変換パネル。
- 前記誘電体膜ミラーの積層数は、10層以下であることを特徴とする請求項4記載の放射線像変換パネル。
- 前記誘電体膜ミラーの全体の厚さは、1μm以下であることを特徴とする請求項4記載の放射線像変換パネル。
- 前記誘電体膜ミラー上の少なくとも前記シンチレータとの間に形成され、前記シンチレータが発する光に対して前記第2の誘電体層より屈折率の低い透明有機膜をさらに備えていることを特徴とする請求項1ないし6のいずれかに記載の放射線像変換パネル。
- 前記金属反射体は、金属薄膜であることを特徴とする請求項1ないし7のいずれかに記載の放射線像変換パネル。
- 前記金属反射体を支持する支持基板をさらに備えていることを特徴とする請求項8記載の放射線像変換パネル。
- 前記金属反射体は,金属基板であることを特徴とする請求項1ないし7のいずれかに記載の放射線像変換パネル。
- 前記金属反射体は、アルミニウム、銀または金からなることを特徴とする請求項8ないし10のいずれかに記載の放射線像変換パネル。
- 請求項1ないし11のいずれかに記載の放射線像変換パネルと、
前記変換部から出力される光像を電気信号に変換する撮像素子と、
を備える放射線イメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/976,323 | 2007-10-23 | ||
US11/976,323 US7732788B2 (en) | 2007-10-23 | 2007-10-23 | Radiation image converting panel, scintillator panel and radiation image sensor |
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JP2012164929A Division JP5607686B2 (ja) | 2007-10-23 | 2012-07-25 | 放射線像変換パネル及び放射線イメージセンサ |
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JP2009103676A true JP2009103676A (ja) | 2009-05-14 |
JP5198842B2 JP5198842B2 (ja) | 2013-05-15 |
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JP2007327886A Active JP5198842B2 (ja) | 2007-10-23 | 2007-12-19 | 放射線像変換パネル及び放射線イメージセンサ |
JP2012164929A Active JP5607686B2 (ja) | 2007-10-23 | 2012-07-25 | 放射線像変換パネル及び放射線イメージセンサ |
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US (1) | US7732788B2 (ja) |
JP (2) | JP5198842B2 (ja) |
KR (1) | KR101022150B1 (ja) |
CN (1) | CN101419289B (ja) |
CA (1) | CA2633665C (ja) |
Cited By (8)
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WO2011010482A1 (ja) * | 2009-07-24 | 2011-01-27 | コニカミノルタエムジー株式会社 | 放射線画像検出器 |
JP2011137665A (ja) * | 2009-12-26 | 2011-07-14 | Canon Inc | シンチレータパネル及び放射線撮像装置とその製造方法、ならびに放射線撮像システム |
JP2011145212A (ja) * | 2010-01-15 | 2011-07-28 | Hitachi Metals Ltd | 放射線検出器およびその製造方法 |
JP2011179855A (ja) * | 2010-02-26 | 2011-09-15 | Mitsubishi Electric Corp | 放射線検出器 |
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JP5198842B2 (ja) | 2013-05-15 |
US7732788B2 (en) | 2010-06-08 |
KR101022150B1 (ko) | 2011-03-17 |
CA2633665A1 (en) | 2009-04-23 |
CN101419289B (zh) | 2012-01-18 |
JP5607686B2 (ja) | 2014-10-15 |
JP2012211925A (ja) | 2012-11-01 |
CA2633665C (en) | 2012-02-21 |
CN101419289A (zh) | 2009-04-29 |
KR20090041306A (ko) | 2009-04-28 |
US20090101844A1 (en) | 2009-04-23 |
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