JP5603346B2 - 光共振器を備える有機発光ダイオードおよびその製造方法 - Google Patents
光共振器を備える有機発光ダイオードおよびその製造方法 Download PDFInfo
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- JP5603346B2 JP5603346B2 JP2011539976A JP2011539976A JP5603346B2 JP 5603346 B2 JP5603346 B2 JP 5603346B2 JP 2011539976 A JP2011539976 A JP 2011539976A JP 2011539976 A JP2011539976 A JP 2011539976A JP 5603346 B2 JP5603346 B2 JP 5603346B2
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- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
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- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- QUTGJNADIYYHQM-UHFFFAOYSA-N n-[4-[6-[(3-ethyloxetan-3-yl)methoxy]hexoxy]phenyl]-4-[4-(n-[4-[6-[(3-ethyloxetan-3-yl)methoxy]hexoxy]phenyl]-4-methoxyanilino)phenyl]-n-(4-methoxyphenyl)aniline Chemical compound C=1C=C(N(C=2C=CC(OC)=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(OC)=CC=2)C=2C=CC(OCCCCCCOCC3(CC)COC3)=CC=2)C=CC=1OCCCCCCOCC1(CC)COC1 QUTGJNADIYYHQM-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
17:部分的透過性金属鏡、例えばAg
18:電子注入層、例えばBa
19:エミッタ層
20:架橋結合半導体
21:透過性酸化物、例えばMoO3
22:画素化された金属鏡、例えばAl
23:基板
Claims (1)
- エミッタ層と、光化学的架橋結合可能な材料から構成される導体層または半導体層とが、減衰光共振器の鏡層の上に蒸着され、前記導体層または半導体層の層厚はフォトリソグラフィ工程によって調節され、前記減衰光共振器の第二の鏡層はこれらの層の上に蒸着されることを含み、前記フォトリソグラフィ工程は、前記光化学的架橋結合可能な材料の上に光の浸透性が異なる場所で少なくとも3つの変化を有するマスクであるグレースケール・マスクを位置付け、前記光化学的架橋結合可能な材料を前記グレースケール・マスクを通して露光し、その後、架橋結合されない領域を除去することによって行われる、有機発光ダイオードの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008054435.3 | 2008-12-09 | ||
DE102008054435A DE102008054435A1 (de) | 2008-12-09 | 2008-12-09 | Organische Leuchtdiode mit optischem Resonator nebst Herstellungsverfahren |
PCT/EP2009/063422 WO2010066488A1 (de) | 2008-12-09 | 2009-10-14 | Organische leuchtdiode mit optischem resonator nebst herstellungsverfahren |
Publications (2)
Publication Number | Publication Date |
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JP2012511796A JP2012511796A (ja) | 2012-05-24 |
JP5603346B2 true JP5603346B2 (ja) | 2014-10-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011539976A Expired - Fee Related JP5603346B2 (ja) | 2008-12-09 | 2009-10-14 | 光共振器を備える有機発光ダイオードおよびその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8878164B2 (ja) |
EP (1) | EP2356711B1 (ja) |
JP (1) | JP5603346B2 (ja) |
KR (1) | KR101596875B1 (ja) |
CN (1) | CN102246329A (ja) |
DE (1) | DE102008054435A1 (ja) |
SG (1) | SG171416A1 (ja) |
WO (1) | WO2010066488A1 (ja) |
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DE102010029317A1 (de) | 2010-05-26 | 2011-12-01 | Universität Zu Köln | Strukturierte Beschichtung |
JP5016712B2 (ja) | 2010-09-21 | 2012-09-05 | 三井金属鉱業株式会社 | 電極箔および有機デバイス |
KR20120106568A (ko) * | 2011-03-18 | 2012-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치의 제작 방법 |
JP5307954B1 (ja) * | 2011-11-07 | 2013-10-02 | 昭和電工株式会社 | 有機発光素子、その製造方法およびその用途 |
TWI501439B (zh) * | 2012-04-19 | 2015-09-21 | Innocom Tech Shenzhen Co Ltd | 影像顯示系統 |
CN103915571A (zh) * | 2014-01-27 | 2014-07-09 | 上海天马有机发光显示技术有限公司 | 一种amoled显示面板及膜层制作方法、显示装置 |
DE102014102191B4 (de) * | 2014-02-20 | 2017-12-28 | Osram Oled Gmbh | Organisches lichtemittierendes Bauelement mit verbessertem Farbwiedergabeindex |
KR20160130466A (ko) * | 2014-03-07 | 2016-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
DE102014103675B4 (de) * | 2014-03-18 | 2023-10-26 | Pictiva Displays International Limited | Organisches lichtemittierendes Bauelement |
CN103996692B (zh) | 2014-04-15 | 2016-01-06 | 京东方科技集团股份有限公司 | 有机发光二极管阵列基板及其制作方法和显示装置 |
CN104319352B (zh) * | 2014-11-13 | 2018-02-13 | 京东方科技集团股份有限公司 | 一种顶发射白光oled器件及其制备方法、显示装置 |
CN104577691A (zh) * | 2015-01-22 | 2015-04-29 | 北京工业大学 | 荧光蛋白溶液激光器 |
CN104597550B (zh) * | 2015-02-02 | 2017-05-31 | 上海理工大学 | 一种线性渐变滤光片中间楔形谐振腔层的制备方法 |
KR102452176B1 (ko) * | 2015-05-29 | 2022-10-07 | 엘지디스플레이 주식회사 | 유기발광다이오드 및 그 제조 방법 |
US10170521B2 (en) * | 2015-12-30 | 2019-01-01 | Lg Display Co., Ltd. | Organic light-emitting diode display device |
KR102385225B1 (ko) | 2017-07-12 | 2022-04-11 | 삼성디스플레이 주식회사 | 유기막 형성용 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법 |
CN108987603B (zh) * | 2018-02-11 | 2021-07-20 | 宁波卢米蓝新材料有限公司 | 一种绿光有机电致发光器件 |
CN109004101B (zh) * | 2018-02-11 | 2021-07-20 | 宁波卢米蓝新材料有限公司 | 一种有机电致发光器件 |
CN108987604B (zh) * | 2018-02-11 | 2021-08-24 | 宁波卢米蓝新材料有限公司 | 一种红光有机电致发光器件 |
KR20200069400A (ko) | 2018-12-05 | 2020-06-17 | 삼성디스플레이 주식회사 | 축합환 화합물, 이를 포함한 조성물 및 이로부터 형성된 박막을 포함하는 유기 발광 소자 |
CN110797385B (zh) * | 2019-12-03 | 2022-04-12 | 上海天马微电子有限公司 | 一种显示面板、显示装置以及制备方法 |
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2008
- 2008-12-09 DE DE102008054435A patent/DE102008054435A1/de not_active Withdrawn
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2009
- 2009-10-14 US US13/133,298 patent/US8878164B2/en not_active Expired - Fee Related
- 2009-10-14 SG SG2011038023A patent/SG171416A1/en unknown
- 2009-10-14 JP JP2011539976A patent/JP5603346B2/ja not_active Expired - Fee Related
- 2009-10-14 WO PCT/EP2009/063422 patent/WO2010066488A1/de active Application Filing
- 2009-10-14 EP EP09784011.0A patent/EP2356711B1/de active Active
- 2009-10-14 CN CN2009801493751A patent/CN102246329A/zh active Pending
- 2009-10-14 KR KR1020117015758A patent/KR101596875B1/ko active IP Right Grant
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DE102008054435A1 (de) | 2010-06-10 |
EP2356711B1 (de) | 2020-06-10 |
KR101596875B1 (ko) | 2016-02-23 |
EP2356711A1 (de) | 2011-08-17 |
CN102246329A (zh) | 2011-11-16 |
WO2010066488A1 (de) | 2010-06-17 |
JP2012511796A (ja) | 2012-05-24 |
US20110303905A1 (en) | 2011-12-15 |
SG171416A1 (en) | 2011-07-28 |
US8878164B2 (en) | 2014-11-04 |
KR20110110151A (ko) | 2011-10-06 |
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