JP5599547B2 - 硬質結晶基板研磨方法及び油性研磨スラリー - Google Patents

硬質結晶基板研磨方法及び油性研磨スラリー Download PDF

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Publication number
JP5599547B2
JP5599547B2 JP2006326334A JP2006326334A JP5599547B2 JP 5599547 B2 JP5599547 B2 JP 5599547B2 JP 2006326334 A JP2006326334 A JP 2006326334A JP 2006326334 A JP2006326334 A JP 2006326334A JP 5599547 B2 JP5599547 B2 JP 5599547B2
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JP
Japan
Prior art keywords
polishing
crystal substrate
hard crystal
polishing step
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006326334A
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English (en)
Japanese (ja)
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JP2008138097A5 (enExample
JP2008138097A (ja
Inventor
賢二 青木
亨 山▲ざき▼
武洋 渡邉
直之 濱田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MIPOX CORPORATION
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MIPOX CORPORATION
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MIPOX CORPORATION filed Critical MIPOX CORPORATION
Priority to JP2006326334A priority Critical patent/JP5599547B2/ja
Priority to TW096145141A priority patent/TWI409323B/zh
Priority to US11/946,531 priority patent/US7828628B2/en
Priority to KR20070123289A priority patent/KR101488987B1/ko
Publication of JP2008138097A publication Critical patent/JP2008138097A/ja
Priority to US12/886,810 priority patent/US20110005143A1/en
Publication of JP2008138097A5 publication Critical patent/JP2008138097A5/ja
Application granted granted Critical
Publication of JP5599547B2 publication Critical patent/JP5599547B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2006326334A 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー Active JP5599547B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006326334A JP5599547B2 (ja) 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー
TW096145141A TWI409323B (zh) 2006-12-01 2007-11-28 Hard crystalline substrate grinding methods and oily grinding slurry
US11/946,531 US7828628B2 (en) 2006-12-01 2007-11-28 Method of polishing hard crystal substrate
KR20070123289A KR101488987B1 (ko) 2006-12-01 2007-11-30 경질 결정 기판 연마 방법 및 유성 연마 슬러리
US12/886,810 US20110005143A1 (en) 2006-12-01 2010-09-21 Polishing oil slurry for polishing hard crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006326334A JP5599547B2 (ja) 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー

Publications (3)

Publication Number Publication Date
JP2008138097A JP2008138097A (ja) 2008-06-19
JP2008138097A5 JP2008138097A5 (enExample) 2011-02-03
JP5599547B2 true JP5599547B2 (ja) 2014-10-01

Family

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Family Applications (1)

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JP2006326334A Active JP5599547B2 (ja) 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー

Country Status (4)

Country Link
US (2) US7828628B2 (enExample)
JP (1) JP5599547B2 (enExample)
KR (1) KR101488987B1 (enExample)
TW (1) TWI409323B (enExample)

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KR101508917B1 (ko) 2009-03-13 2015-04-07 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 나노다이아몬드를 사용하는 화학기계적 평탄화 공정
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JP5620300B2 (ja) * 2011-02-16 2014-11-05 Ｍｉｐｏｘ株式会社 結晶材料からなる被研磨物を研磨するための研磨盤とその製造方法、及び研磨方法
JP5734435B2 (ja) * 2011-08-10 2015-06-17 三菱電機株式会社 半導体装置の製造方法
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US9057790B2 (en) 2011-09-30 2015-06-16 Saint-Gobain Ceramics & Plastics, Inc. Scintillation detection device with pressure sensitive adhesive interfaces
US9522454B2 (en) * 2012-12-17 2016-12-20 Seagate Technology Llc Method of patterning a lapping plate, and patterned lapping plates
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TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
JP6694745B2 (ja) * 2016-03-31 2020-05-20 株式会社フジミインコーポレーテッド 研磨用組成物
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JP2022523515A (ja) 2019-01-31 2022-04-25 プレオン インコーポレイテッド 硬質基板を研磨するためのマルチモーダルダイヤモンド研磨剤パッケージ又はスラリー
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CN112980391A (zh) * 2021-03-02 2021-06-18 河北思瑞恩新材料科技有限公司 一种用于碳化硅晶片加工的粗磨液及其制备方法
TWM618520U (zh) * 2021-05-14 2021-10-21 日揚科技股份有限公司 硬質材料加工裝置及其系統
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CN114231251A (zh) * 2021-12-27 2022-03-25 河南联合精密材料股份有限公司 一种碳化硅晶片粗磨用金刚石研磨液及其制备方法
CN117261002A (zh) * 2023-08-28 2023-12-22 深圳先进技术研究院 一种金属卤化物钙钛矿单晶的机械加工处理方法
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Also Published As

Publication number Publication date
US20110005143A1 (en) 2011-01-13
TW200835781A (en) 2008-09-01
KR101488987B1 (ko) 2015-02-02
US7828628B2 (en) 2010-11-09
TWI409323B (zh) 2013-09-21
US20080139089A1 (en) 2008-06-12
JP2008138097A (ja) 2008-06-19
KR20080050338A (ko) 2008-06-05

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