JP2008138097A5 - - Google Patents

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Publication number
JP2008138097A5
JP2008138097A5 JP2006326334A JP2006326334A JP2008138097A5 JP 2008138097 A5 JP2008138097 A5 JP 2008138097A5 JP 2006326334 A JP2006326334 A JP 2006326334A JP 2006326334 A JP2006326334 A JP 2006326334A JP 2008138097 A5 JP2008138097 A5 JP 2008138097A5
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JP
Japan
Prior art keywords
gan substrate
polishing
polishing step
rough
rough polishing
Prior art date
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Granted
Application number
JP2006326334A
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English (en)
Japanese (ja)
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JP2008138097A (ja
JP5599547B2 (ja
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Publication date
Priority claimed from JP2006326334A external-priority patent/JP5599547B2/ja
Priority to JP2006326334A priority Critical patent/JP5599547B2/ja
Application filed filed Critical
Priority to TW096145141A priority patent/TWI409323B/zh
Priority to US11/946,531 priority patent/US7828628B2/en
Priority to KR20070123289A priority patent/KR101488987B1/ko
Publication of JP2008138097A publication Critical patent/JP2008138097A/ja
Priority to US12/886,810 priority patent/US20110005143A1/en
Publication of JP2008138097A5 publication Critical patent/JP2008138097A5/ja
Publication of JP5599547B2 publication Critical patent/JP5599547B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006326334A 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー Active JP5599547B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006326334A JP5599547B2 (ja) 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー
TW096145141A TWI409323B (zh) 2006-12-01 2007-11-28 Hard crystalline substrate grinding methods and oily grinding slurry
US11/946,531 US7828628B2 (en) 2006-12-01 2007-11-28 Method of polishing hard crystal substrate
KR20070123289A KR101488987B1 (ko) 2006-12-01 2007-11-30 경질 결정 기판 연마 방법 및 유성 연마 슬러리
US12/886,810 US20110005143A1 (en) 2006-12-01 2010-09-21 Polishing oil slurry for polishing hard crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006326334A JP5599547B2 (ja) 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー

Publications (3)

Publication Number Publication Date
JP2008138097A JP2008138097A (ja) 2008-06-19
JP2008138097A5 true JP2008138097A5 (enExample) 2011-02-03
JP5599547B2 JP5599547B2 (ja) 2014-10-01

Family

ID=39498652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006326334A Active JP5599547B2 (ja) 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー

Country Status (4)

Country Link
US (2) US7828628B2 (enExample)
JP (1) JP5599547B2 (enExample)
KR (1) KR101488987B1 (enExample)
TW (1) TWI409323B (enExample)

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KR101346009B1 (ko) 2009-03-13 2013-12-31 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 나노다이아몬드를 사용하는 화학기계적 평탄화 공정
JP5452175B2 (ja) * 2009-11-04 2014-03-26 昭和電工株式会社 ラップ加工方法
JP2011108321A (ja) * 2009-11-18 2011-06-02 Hitachi Ltd 磁気ヘッドスライダの製造方法
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JP5734435B2 (ja) * 2011-08-10 2015-06-17 三菱電機株式会社 半導体装置の製造方法
WO2013049775A2 (en) 2011-09-30 2013-04-04 Saint-Gobain Ceramics & Plastics, Inc. Scintillation detection device with pressure sensitive adhesive
KR101978536B1 (ko) 2011-09-30 2019-05-14 쌩-고벵 크리스톡스 에 드테끄퇴르 특정한 결정학적 특징을 갖는 ⅲ-ⅴ족 기판 물질 및 제조 방법
US9522454B2 (en) * 2012-12-17 2016-12-20 Seagate Technology Llc Method of patterning a lapping plate, and patterned lapping plates
CN103013345B (zh) * 2012-12-21 2015-02-18 清华大学 油性金刚石研磨液及其制备方法
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
JP6694745B2 (ja) * 2016-03-31 2020-05-20 株式会社フジミインコーポレーテッド 研磨用組成物
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
JP7135531B2 (ja) * 2018-07-20 2022-09-13 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2022523515A (ja) 2019-01-31 2022-04-25 プレオン インコーポレイテッド 硬質基板を研磨するためのマルチモーダルダイヤモンド研磨剤パッケージ又はスラリー
KR20220051342A (ko) * 2019-08-29 2022-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 특성 예측 시스템
CN112480825A (zh) * 2020-12-10 2021-03-12 河南联合精密材料股份有限公司 碳化硅晶片粗抛用金刚石抛光液及制备方法
CN112980391A (zh) * 2021-03-02 2021-06-18 河北思瑞恩新材料科技有限公司 一种用于碳化硅晶片加工的粗磨液及其制备方法
TWI813999B (zh) * 2021-05-14 2023-09-01 日揚科技股份有限公司 硬質材料加工裝置及其系統
US11365854B1 (en) 2021-09-24 2022-06-21 E. Mishan & Sons, Inc. Solar light with positionable panels
EP4424870A4 (en) * 2021-10-28 2025-10-08 Tokai Carbon Kk POLYCRYSTALLINE SIC MOLDED BODY AND ITS MANUFACTURING METHOD
CN114231251A (zh) * 2021-12-27 2022-03-25 河南联合精密材料股份有限公司 一种碳化硅晶片粗磨用金刚石研磨液及其制备方法
CN117261002A (zh) * 2023-08-28 2023-12-22 深圳先进技术研究院 一种金属卤化物钙钛矿单晶的机械加工处理方法
JP7499934B1 (ja) * 2023-11-13 2024-06-14 Ｊｘ金属株式会社 リン化インジウム基板及び半導体エピタキシャルウエハ
JP7499933B1 (ja) * 2023-11-13 2024-06-14 Ｊｘ金属株式会社 リン化インジウム基板及び半導体エピタキシャルウエハ
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