JP5597031B2 - リソグラフィ装置及び物品の製造方法 - Google Patents

リソグラフィ装置及び物品の製造方法 Download PDF

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Publication number
JP5597031B2
JP5597031B2 JP2010124614A JP2010124614A JP5597031B2 JP 5597031 B2 JP5597031 B2 JP 5597031B2 JP 2010124614 A JP2010124614 A JP 2010124614A JP 2010124614 A JP2010124614 A JP 2010124614A JP 5597031 B2 JP5597031 B2 JP 5597031B2
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substrate
mark
detection unit
shot
shot areas
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JP2010124614A
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English (en)
Japanese (ja)
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JP2011253839A5 (enExample
JP2011253839A (ja
Inventor
慎一郎 古賀
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010124614A priority Critical patent/JP5597031B2/ja
Priority to TW100117231A priority patent/TWI447536B/zh
Priority to KR1020110048447A priority patent/KR101454063B1/ko
Priority to US13/117,645 priority patent/US20110290136A1/en
Publication of JP2011253839A publication Critical patent/JP2011253839A/ja
Publication of JP2011253839A5 publication Critical patent/JP2011253839A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
JP2010124614A 2010-05-31 2010-05-31 リソグラフィ装置及び物品の製造方法 Active JP5597031B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010124614A JP5597031B2 (ja) 2010-05-31 2010-05-31 リソグラフィ装置及び物品の製造方法
TW100117231A TWI447536B (zh) 2010-05-31 2011-05-17 微影設備及商品之製造方法
KR1020110048447A KR101454063B1 (ko) 2010-05-31 2011-05-23 리소그래피 장치 및 물품의 제조 방법
US13/117,645 US20110290136A1 (en) 2010-05-31 2011-05-27 Lithographic apparatus and manufacturing method of commodities

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010124614A JP5597031B2 (ja) 2010-05-31 2010-05-31 リソグラフィ装置及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2011253839A JP2011253839A (ja) 2011-12-15
JP2011253839A5 JP2011253839A5 (enExample) 2013-07-18
JP5597031B2 true JP5597031B2 (ja) 2014-10-01

Family

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JP2010124614A Active JP5597031B2 (ja) 2010-05-31 2010-05-31 リソグラフィ装置及び物品の製造方法

Country Status (4)

Country Link
US (1) US20110290136A1 (enExample)
JP (1) JP5597031B2 (enExample)
KR (1) KR101454063B1 (enExample)
TW (1) TWI447536B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5938218B2 (ja) 2012-01-16 2016-06-22 キヤノン株式会社 インプリント装置、物品の製造方法およびインプリント方法
JP6066565B2 (ja) * 2012-01-31 2017-01-25 キヤノン株式会社 インプリント装置、および、物品の製造方法
NL2010166A (en) * 2012-02-22 2013-08-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5868215B2 (ja) * 2012-02-27 2016-02-24 キヤノン株式会社 インプリント装置およびインプリント方法、それを用いた物品の製造方法
JP6029495B2 (ja) * 2012-03-12 2016-11-24 キヤノン株式会社 インプリント方法およびインプリント装置、それを用いた物品の製造方法
JP6180131B2 (ja) * 2012-03-19 2017-08-16 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP6188382B2 (ja) 2013-04-03 2017-08-30 キヤノン株式会社 インプリント装置および物品の製造方法
JP5989610B2 (ja) 2013-08-05 2016-09-07 株式会社東芝 マスクセット設計方法およびマスクセット設計プログラム
US10005200B2 (en) 2014-03-06 2018-06-26 Cnh Industrial Canada, Ltd. Apparatus and method for removing holes in production of biocomposite materials
JP6401501B2 (ja) * 2014-06-02 2018-10-10 キヤノン株式会社 インプリント装置、および物品の製造方法
US10331027B2 (en) 2014-09-12 2019-06-25 Canon Kabushiki Kaisha Imprint apparatus, imprint system, and method of manufacturing article
JP6506521B2 (ja) * 2014-09-17 2019-04-24 キヤノン株式会社 インプリント方法、インプリント装置、および物品の製造方法
JP6555868B2 (ja) * 2014-09-30 2019-08-07 キヤノン株式会社 パターン形成方法、および物品の製造方法
JP6457773B2 (ja) * 2014-10-07 2019-01-23 キヤノン株式会社 インプリント方法、インプリント装置及び物品製造方法
JP6799397B2 (ja) * 2015-08-10 2020-12-16 キヤノン株式会社 インプリント装置、および物品の製造方法
JP6726987B2 (ja) * 2016-03-17 2020-07-22 キヤノン株式会社 インプリント装置および物品製造方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
EP3521932A4 (en) * 2016-09-30 2020-05-27 Nikon Corporation MEASURING SYSTEM, SUBSTRATE PROCESSING SYSTEM AND DEVICE MANUFACTURING METHOD
KR102477736B1 (ko) * 2016-12-08 2022-12-14 가부시키가이샤 브이 테크놀로지 근접 노광 장치 및 근접 노광 방법
JP2019102537A (ja) * 2017-11-29 2019-06-24 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
JP7116605B2 (ja) * 2018-06-28 2022-08-10 キヤノン株式会社 インプリント材のパターンを形成するための方法、インプリント装置、インプリント装置の調整方法、および、物品製造方法
US10901327B2 (en) 2018-12-20 2021-01-26 Canon Kabushiki Kaisha Automatic defect analyzer for nanoimprint lithography using image analysis
JP7324051B2 (ja) * 2019-05-28 2023-08-09 キヤノン株式会社 リソグラフィ装置、物品の製造方法及び制御方法
JP7433925B2 (ja) * 2020-01-20 2024-02-20 キヤノン株式会社 インプリント方法、インプリント装置、および物品製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04237112A (ja) * 1991-01-22 1992-08-25 Nec Corp 露光装置における位置合わせ方法
JPH08330214A (ja) * 1995-06-01 1996-12-13 Nikon Corp アライメント精度評価方法
JP4109736B2 (ja) * 1997-11-14 2008-07-02 キヤノン株式会社 位置ずれ検出方法
JP2004006527A (ja) * 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
CN101427185B (zh) * 2006-04-18 2013-03-20 佳能株式会社 对准方法、压印方法、对准设备和压印设备
JP4958614B2 (ja) * 2006-04-18 2012-06-20 キヤノン株式会社 パターン転写装置、インプリント装置、パターン転写方法および位置合わせ装置
JP5121549B2 (ja) * 2008-04-21 2013-01-16 株式会社東芝 ナノインプリント方法
JP2010080631A (ja) * 2008-09-25 2010-04-08 Canon Inc 押印装置および物品の製造方法
JP2010080630A (ja) * 2008-09-25 2010-04-08 Canon Inc 押印装置および物品の製造方法

Also Published As

Publication number Publication date
KR101454063B1 (ko) 2014-10-27
US20110290136A1 (en) 2011-12-01
JP2011253839A (ja) 2011-12-15
TW201142549A (en) 2011-12-01
KR20110132238A (ko) 2011-12-07
TWI447536B (zh) 2014-08-01

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