TWI447536B - 微影設備及商品之製造方法 - Google Patents
微影設備及商品之製造方法 Download PDFInfo
- Publication number
- TWI447536B TWI447536B TW100117231A TW100117231A TWI447536B TW I447536 B TWI447536 B TW I447536B TW 100117231 A TW100117231 A TW 100117231A TW 100117231 A TW100117231 A TW 100117231A TW I447536 B TWI447536 B TW I447536B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- mark
- detecting
- regions
- shot regions
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 179
- 238000000034 method Methods 0.000 claims description 55
- 238000001514 detection method Methods 0.000 claims description 52
- 239000011347 resin Substances 0.000 claims description 45
- 229920005989 resin Polymers 0.000 claims description 45
- 238000003384 imaging method Methods 0.000 claims description 35
- 238000012545 processing Methods 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 17
- 238000006073 displacement reaction Methods 0.000 claims description 15
- 238000001459 lithography Methods 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 48
- 238000012937 correction Methods 0.000 description 43
- 238000013461 design Methods 0.000 description 18
- 238000005070 sampling Methods 0.000 description 16
- 238000012109 statistical procedure Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001494 step-and-flash imprint lithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010124614A JP5597031B2 (ja) | 2010-05-31 | 2010-05-31 | リソグラフィ装置及び物品の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201142549A TW201142549A (en) | 2011-12-01 |
| TWI447536B true TWI447536B (zh) | 2014-08-01 |
Family
ID=45021002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100117231A TWI447536B (zh) | 2010-05-31 | 2011-05-17 | 微影設備及商品之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20110290136A1 (enExample) |
| JP (1) | JP5597031B2 (enExample) |
| KR (1) | KR101454063B1 (enExample) |
| TW (1) | TWI447536B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5938218B2 (ja) | 2012-01-16 | 2016-06-22 | キヤノン株式会社 | インプリント装置、物品の製造方法およびインプリント方法 |
| JP6066565B2 (ja) * | 2012-01-31 | 2017-01-25 | キヤノン株式会社 | インプリント装置、および、物品の製造方法 |
| NL2010166A (en) * | 2012-02-22 | 2013-08-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| JP5868215B2 (ja) * | 2012-02-27 | 2016-02-24 | キヤノン株式会社 | インプリント装置およびインプリント方法、それを用いた物品の製造方法 |
| JP6029495B2 (ja) * | 2012-03-12 | 2016-11-24 | キヤノン株式会社 | インプリント方法およびインプリント装置、それを用いた物品の製造方法 |
| JP6180131B2 (ja) * | 2012-03-19 | 2017-08-16 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP6188382B2 (ja) | 2013-04-03 | 2017-08-30 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
| JP5989610B2 (ja) | 2013-08-05 | 2016-09-07 | 株式会社東芝 | マスクセット設計方法およびマスクセット設計プログラム |
| US10005200B2 (en) | 2014-03-06 | 2018-06-26 | Cnh Industrial Canada, Ltd. | Apparatus and method for removing holes in production of biocomposite materials |
| JP6401501B2 (ja) * | 2014-06-02 | 2018-10-10 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
| US10331027B2 (en) | 2014-09-12 | 2019-06-25 | Canon Kabushiki Kaisha | Imprint apparatus, imprint system, and method of manufacturing article |
| JP6506521B2 (ja) * | 2014-09-17 | 2019-04-24 | キヤノン株式会社 | インプリント方法、インプリント装置、および物品の製造方法 |
| JP6555868B2 (ja) * | 2014-09-30 | 2019-08-07 | キヤノン株式会社 | パターン形成方法、および物品の製造方法 |
| JP6457773B2 (ja) * | 2014-10-07 | 2019-01-23 | キヤノン株式会社 | インプリント方法、インプリント装置及び物品製造方法 |
| JP6799397B2 (ja) * | 2015-08-10 | 2020-12-16 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
| JP6726987B2 (ja) * | 2016-03-17 | 2020-07-22 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| JP6207671B1 (ja) * | 2016-06-01 | 2017-10-04 | キヤノン株式会社 | パターン形成装置、基板配置方法及び物品の製造方法 |
| EP3521932A4 (en) * | 2016-09-30 | 2020-05-27 | Nikon Corporation | MEASURING SYSTEM, SUBSTRATE PROCESSING SYSTEM AND DEVICE MANUFACTURING METHOD |
| KR102477736B1 (ko) * | 2016-12-08 | 2022-12-14 | 가부시키가이샤 브이 테크놀로지 | 근접 노광 장치 및 근접 노광 방법 |
| JP2019102537A (ja) * | 2017-11-29 | 2019-06-24 | キヤノン株式会社 | インプリント装置、インプリント方法および物品製造方法 |
| JP7116605B2 (ja) * | 2018-06-28 | 2022-08-10 | キヤノン株式会社 | インプリント材のパターンを形成するための方法、インプリント装置、インプリント装置の調整方法、および、物品製造方法 |
| US10901327B2 (en) | 2018-12-20 | 2021-01-26 | Canon Kabushiki Kaisha | Automatic defect analyzer for nanoimprint lithography using image analysis |
| JP7324051B2 (ja) * | 2019-05-28 | 2023-08-09 | キヤノン株式会社 | リソグラフィ装置、物品の製造方法及び制御方法 |
| JP7433925B2 (ja) * | 2020-01-20 | 2024-02-20 | キヤノン株式会社 | インプリント方法、インプリント装置、および物品製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007509769A (ja) * | 2003-10-02 | 2007-04-19 | モレキュラー・インプリンツ・インコーポレーテッド | 単一位相流体インプリント・リソグラフィ法 |
| CN101059650A (zh) * | 2006-04-18 | 2007-10-24 | 佳能株式会社 | 图案转印设备、压印设备和图案转印方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04237112A (ja) * | 1991-01-22 | 1992-08-25 | Nec Corp | 露光装置における位置合わせ方法 |
| JPH08330214A (ja) * | 1995-06-01 | 1996-12-13 | Nikon Corp | アライメント精度評価方法 |
| JP4109736B2 (ja) * | 1997-11-14 | 2008-07-02 | キヤノン株式会社 | 位置ずれ検出方法 |
| JP2004006527A (ja) * | 2002-05-31 | 2004-01-08 | Canon Inc | 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板 |
| JP4958614B2 (ja) * | 2006-04-18 | 2012-06-20 | キヤノン株式会社 | パターン転写装置、インプリント装置、パターン転写方法および位置合わせ装置 |
| JP5121549B2 (ja) * | 2008-04-21 | 2013-01-16 | 株式会社東芝 | ナノインプリント方法 |
| JP2010080631A (ja) * | 2008-09-25 | 2010-04-08 | Canon Inc | 押印装置および物品の製造方法 |
| JP2010080630A (ja) * | 2008-09-25 | 2010-04-08 | Canon Inc | 押印装置および物品の製造方法 |
-
2010
- 2010-05-31 JP JP2010124614A patent/JP5597031B2/ja active Active
-
2011
- 2011-05-17 TW TW100117231A patent/TWI447536B/zh active
- 2011-05-23 KR KR1020110048447A patent/KR101454063B1/ko active Active
- 2011-05-27 US US13/117,645 patent/US20110290136A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007509769A (ja) * | 2003-10-02 | 2007-04-19 | モレキュラー・インプリンツ・インコーポレーテッド | 単一位相流体インプリント・リソグラフィ法 |
| CN101059650A (zh) * | 2006-04-18 | 2007-10-24 | 佳能株式会社 | 图案转印设备、压印设备和图案转印方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5597031B2 (ja) | 2014-10-01 |
| KR101454063B1 (ko) | 2014-10-27 |
| US20110290136A1 (en) | 2011-12-01 |
| JP2011253839A (ja) | 2011-12-15 |
| TW201142549A (en) | 2011-12-01 |
| KR20110132238A (ko) | 2011-12-07 |
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