JP5580800B2 - 積層体、およびその積層体の分離方法 - Google Patents
積層体、およびその積層体の分離方法 Download PDFInfo
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- JP5580800B2 JP5580800B2 JP2011221797A JP2011221797A JP5580800B2 JP 5580800 B2 JP5580800 B2 JP 5580800B2 JP 2011221797 A JP2011221797 A JP 2011221797A JP 2011221797 A JP2011221797 A JP 2011221797A JP 5580800 B2 JP5580800 B2 JP 5580800B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
- H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31935—Ester, halide or nitrile of addition polymer
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011221797A JP5580800B2 (ja) | 2010-10-29 | 2011-10-06 | 積層体、およびその積層体の分離方法 |
| KR1020137012957A KR101452671B1 (ko) | 2010-10-29 | 2011-10-19 | 적층체, 및 그 적층체의 분리 방법 |
| US13/880,803 US9682532B2 (en) | 2010-10-29 | 2011-10-19 | Laminated body and method for separating laminated body |
| PCT/JP2011/074048 WO2012056969A1 (ja) | 2010-10-29 | 2011-10-19 | 積層体、およびその積層体の分離方法 |
| TW100138889A TWI462835B (zh) | 2010-10-29 | 2011-10-26 | 積層體及分離該積層體之方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010243147 | 2010-10-29 | ||
| JP2010243147 | 2010-10-29 | ||
| JP2011221797A JP5580800B2 (ja) | 2010-10-29 | 2011-10-06 | 積層体、およびその積層体の分離方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012106486A JP2012106486A (ja) | 2012-06-07 |
| JP2012106486A5 JP2012106486A5 (enExample) | 2014-07-10 |
| JP5580800B2 true JP5580800B2 (ja) | 2014-08-27 |
Family
ID=45993682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011221797A Active JP5580800B2 (ja) | 2010-10-29 | 2011-10-06 | 積層体、およびその積層体の分離方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9682532B2 (enExample) |
| JP (1) | JP5580800B2 (enExample) |
| KR (1) | KR101452671B1 (enExample) |
| TW (1) | TWI462835B (enExample) |
| WO (1) | WO2012056969A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10706972B2 (en) | 2012-04-26 | 2020-07-07 | Ge-Hitachi Nuclear Energy Americas Llc | Fuel bundle for a liquid metal cooled nuclear reactor |
| KR20220050057A (ko) | 2020-10-15 | 2022-04-22 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 적층체의 제조 방법 및 처리 방법, 그 제조 방법 및 처리 방법에서 사용하는 감광성 수지 조성물 |
| KR20220050788A (ko) | 2020-10-15 | 2022-04-25 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 접착제층 형성용 조성물, 적층체의 제조 방법 및 처리 방법 |
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| JP5864926B2 (ja) * | 2011-07-14 | 2016-02-17 | 東京応化工業株式会社 | 積層体、分離方法、及び製造方法 |
| JP6006569B2 (ja) * | 2012-07-23 | 2016-10-12 | 東京応化工業株式会社 | 積層体及び積層体の製造方法 |
| US10741718B2 (en) | 2012-09-05 | 2020-08-11 | Lumileds, LLC | Laser de-bond carrier wafer from device wafer |
| JP6261508B2 (ja) * | 2012-09-28 | 2018-01-17 | 東京応化工業株式会社 | 積層体、積層体の分離方法、および分離層の評価方法 |
| JP6162976B2 (ja) * | 2013-02-26 | 2017-07-12 | 東京応化工業株式会社 | 基板の処理方法 |
| JP6114596B2 (ja) * | 2013-03-26 | 2017-04-12 | 富士フイルム株式会社 | 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法 |
| JP6216727B2 (ja) * | 2014-05-08 | 2017-10-18 | 東京応化工業株式会社 | 支持体分離方法 |
| TWI663058B (zh) * | 2014-07-22 | 2019-06-21 | Brewer Science Inc. | 作爲三維積體電路應用的雷射釋放材料的聚醯亞胺 |
| JP6738802B2 (ja) * | 2015-03-30 | 2020-08-12 | ソニーセミコンダクタソリューションズ株式会社 | 電子デバイスおよび電子デバイスの製造方法 |
| WO2017056662A1 (ja) * | 2015-09-28 | 2017-04-06 | Jsr株式会社 | 対象物の処理方法、仮固定用組成物、半導体装置及びその製造方法 |
| JP6524972B2 (ja) * | 2015-09-28 | 2019-06-05 | Jsr株式会社 | 対象物の処理方法、仮固定用組成物、半導体装置及びその製造方法 |
| DE102015118742A1 (de) * | 2015-11-02 | 2017-05-04 | Ev Group E. Thallner Gmbh | Verfahren zum Bonden und Lösen von Substraten |
| JP2017103406A (ja) * | 2015-12-04 | 2017-06-08 | 株式会社ディスコ | ウエーハの加工方法 |
| WO2018137735A1 (de) * | 2017-01-26 | 2018-08-02 | Gross, Leander Kilian | Verfahren und vorrichtung zum trennen verschiedener materialschichten eines verbundbauteils |
| JP6743738B2 (ja) * | 2017-03-27 | 2020-08-19 | 信越化学工業株式会社 | 積層体及びその製造方法 |
| US10403598B2 (en) * | 2017-08-11 | 2019-09-03 | Micron Technology, Inc. | Methods and system for processing semiconductor device structures |
| JP6879158B2 (ja) * | 2017-10-03 | 2021-06-02 | 信越化学工業株式会社 | 半導体装置及びその製造方法、並びに積層体 |
| CN111316401B (zh) | 2017-11-01 | 2024-08-02 | 日产化学株式会社 | 含有酚醛清漆树脂作为剥离层的层叠体 |
| KR102669588B1 (ko) | 2018-11-19 | 2024-05-29 | 닛산 가가쿠 가부시키가이샤 | 광조사 박리용 접착제 조성물 및 적층체, 그리고 적층체의 제조 방법 및 박리 방법 |
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| JP7688330B2 (ja) | 2020-02-21 | 2025-06-04 | 日産化学株式会社 | 積層体及び剥離剤組成物 |
| JPWO2021256386A1 (enExample) | 2020-06-15 | 2021-12-23 | ||
| WO2022019211A1 (ja) | 2020-07-22 | 2022-01-27 | 日産化学株式会社 | 積層体、剥離剤組成物及び加工された半導体基板の製造方法 |
| CN115989142A (zh) | 2020-08-27 | 2023-04-18 | 日产化学株式会社 | 层叠体及剥离剂组合物 |
| WO2022210241A1 (ja) | 2021-03-31 | 2022-10-06 | 日産化学株式会社 | 積層体、剥離剤組成物及び加工された半導体基板の製造方法 |
| KR20220136129A (ko) | 2021-03-31 | 2022-10-07 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 접착제층 형성용 조성물, 적층체, 적층체의 제조 방법 및 적층체의 처리 방법 |
| JP2023008789A (ja) * | 2021-07-02 | 2023-01-19 | 日鉄ケミカル&マテリアル株式会社 | 接着剤層形成用組成物、積層体、積層体の製造方法および積層体の処理方法 |
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| WO2022210238A1 (ja) | 2021-03-31 | 2022-10-06 | 日産化学株式会社 | 積層体、剥離剤組成物及び加工された半導体基板の製造方法 |
| KR20240105389A (ko) | 2021-10-29 | 2024-07-05 | 닛산 가가쿠 가부시키가이샤 | 적층체, 박리제 조성물 및 가공된 반도체 기판의 제조 방법 |
| KR20230147535A (ko) | 2022-04-14 | 2023-10-23 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 수지 조성물, 적층체의 제조 방법, 적층체 및 처리 방법 |
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| US20250388785A1 (en) | 2022-09-22 | 2025-12-25 | Nissan Chemical Corporation | Release agent composition for release by irradiation with light, laminate, and method for producing processed semiconductor substrate |
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| WO2024128279A1 (ja) | 2022-12-15 | 2024-06-20 | 日産化学株式会社 | 光照射剥離用の剥離剤組成物、積層体、及び加工された半導体基板又は電子デバイス層の製造方法 |
| KR20240104004A (ko) | 2022-12-27 | 2024-07-04 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 접착제층 형성용 조성물, 적층체, 접착제층의 제조 방법, 적층체의 제조 방법 및 적층체의 처리 방법 |
| KR20240103997A (ko) | 2022-12-27 | 2024-07-04 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | (메타)아크릴 공중합체 및 그 제조 방법 |
| CN120883331A (zh) | 2023-03-23 | 2025-10-31 | 日产化学株式会社 | 光照射剥离用的剥离剂组合物、层叠体以及经加工的半导体基板的制造方法 |
| JP2025004565A (ja) | 2023-06-26 | 2025-01-15 | 日鉄ケミカル&マテリアル株式会社 | 接着剤層形成用組成物、積層体、積層体の製造方法および積層体の処理方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69739376D1 (de) | 1996-08-27 | 2009-06-04 | Seiko Epson Corp | Ablösungsverfahren und Verfahren zum Übertragen eines Dünnfilm-Bauelements |
| USRE38466E1 (en) | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
| US6127199A (en) | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
| US5948847A (en) | 1996-12-13 | 1999-09-07 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic patterning |
| JP3506357B2 (ja) | 1996-12-13 | 2004-03-15 | 東京応化工業株式会社 | リソグラフィー用下地材 |
| JP2963945B2 (ja) * | 1997-05-08 | 1999-10-18 | 大塚化学株式会社 | 2,2’−ビス(6−ベンゾトリアゾリルフェノール)化合物 |
| JP2002226796A (ja) * | 2001-01-29 | 2002-08-14 | Hitachi Chem Co Ltd | ウェハ貼着用粘着シート及び半導体装置 |
| US7534498B2 (en) | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
| JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
| JP5000112B2 (ja) * | 2005-09-09 | 2012-08-15 | 東京応化工業株式会社 | ナノインプリントリソグラフィによるパターン形成方法 |
| JP5063016B2 (ja) * | 2006-03-23 | 2012-10-31 | リンテック株式会社 | 粘着シート及び剥離シート |
-
2011
- 2011-10-06 JP JP2011221797A patent/JP5580800B2/ja active Active
- 2011-10-19 KR KR1020137012957A patent/KR101452671B1/ko active Active
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10706972B2 (en) | 2012-04-26 | 2020-07-07 | Ge-Hitachi Nuclear Energy Americas Llc | Fuel bundle for a liquid metal cooled nuclear reactor |
| KR20220050057A (ko) | 2020-10-15 | 2022-04-22 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 적층체의 제조 방법 및 처리 방법, 그 제조 방법 및 처리 방법에서 사용하는 감광성 수지 조성물 |
| KR20220050788A (ko) | 2020-10-15 | 2022-04-25 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 접착제층 형성용 조성물, 적층체의 제조 방법 및 처리 방법 |
| JP2022065423A (ja) * | 2020-10-15 | 2022-04-27 | 日鉄ケミカル&マテリアル株式会社 | 積層体の製造方法および処理方法、当該製造方法および処理方法で用いる感光性樹脂組成物 |
| JP7517942B2 (ja) | 2020-10-15 | 2024-07-17 | 日鉄ケミカル&マテリアル株式会社 | 積層体の製造方法および処理方法、当該製造方法および処理方法で用いる感光性樹脂組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201240821A (en) | 2012-10-16 |
| TWI462835B (zh) | 2014-12-01 |
| US9682532B2 (en) | 2017-06-20 |
| US20140311680A1 (en) | 2014-10-23 |
| WO2012056969A1 (ja) | 2012-05-03 |
| JP2012106486A (ja) | 2012-06-07 |
| KR20130128400A (ko) | 2013-11-26 |
| KR101452671B1 (ko) | 2014-10-22 |
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