JP6879158B2 - 半導体装置及びその製造方法、並びに積層体 - Google Patents
半導体装置及びその製造方法、並びに積層体 Download PDFInfo
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- JP6879158B2 JP6879158B2 JP2017193635A JP2017193635A JP6879158B2 JP 6879158 B2 JP6879158 B2 JP 6879158B2 JP 2017193635 A JP2017193635 A JP 2017193635A JP 2017193635 A JP2017193635 A JP 2017193635A JP 6879158 B2 JP6879158 B2 JP 6879158B2
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- naphthol
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- HMIBDRSTVGFJPB-UHFFFAOYSA-N methyl 1-hydroxynaphthalene-2-carboxylate Chemical compound C1=CC=CC2=C(O)C(C(=O)OC)=CC=C21 HMIBDRSTVGFJPB-UHFFFAOYSA-N 0.000 claims description 2
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- DFQICHCWIIJABH-UHFFFAOYSA-N naphthalene-2,7-diol Chemical compound C1=CC(O)=CC2=CC(O)=CC=C21 DFQICHCWIIJABH-UHFFFAOYSA-N 0.000 claims description 2
- OENHRRVNRZBNNS-UHFFFAOYSA-N naphthalene-1,8-diol Chemical compound C1=CC(O)=C2C(O)=CC=CC2=C1 OENHRRVNRZBNNS-UHFFFAOYSA-N 0.000 claims 2
- UEULEVKFYSYUCZ-UHFFFAOYSA-N 4-naphthalen-1-ylphenol Chemical compound C1=CC(O)=CC=C1C1=CC=CC2=CC=CC=C12 UEULEVKFYSYUCZ-UHFFFAOYSA-N 0.000 claims 1
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- FQUNFJULCYSSOP-UHFFFAOYSA-N bisoctrizole Chemical compound N1=C2C=CC=CC2=NN1C1=CC(C(C)(C)CC(C)(C)C)=CC(CC=2C(=C(C=C(C=2)C(C)(C)CC(C)(C)C)N2N=C3C=CC=CC3=N2)O)=C1O FQUNFJULCYSSOP-UHFFFAOYSA-N 0.000 description 1
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- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000004851 cyclopentylmethyl group Chemical group C1(CCCC1)C* 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- RJGHQTVXGKYATR-UHFFFAOYSA-L dibutyl(dichloro)stannane Chemical compound CCCC[Sn](Cl)(Cl)CCCC RJGHQTVXGKYATR-UHFFFAOYSA-L 0.000 description 1
- JGFBRKRYDCGYKD-UHFFFAOYSA-N dibutyl(oxo)tin Chemical compound CCCC[Sn](=O)CCCC JGFBRKRYDCGYKD-UHFFFAOYSA-N 0.000 description 1
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- NMAKPIATXQEXBT-UHFFFAOYSA-N didecyl phenyl phosphite Chemical compound CCCCCCCCCCOP(OCCCCCCCCCC)OC1=CC=CC=C1 NMAKPIATXQEXBT-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- QTITTYDCSDVMKM-UHFFFAOYSA-N dihydroxyphosphanyl dihydrogen phosphite 3-(1-hydroxypropan-2-yloxy)-1,1,1,2-tetraphenylpropan-2-ol Chemical compound OP(O)OP(O)O.C=1C=CC=CC=1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)C(O)(COC(CO)C)C1=CC=CC=C1 QTITTYDCSDVMKM-UHFFFAOYSA-N 0.000 description 1
- MDKCAJOWNAKRKU-UHFFFAOYSA-N dihydroxyphosphanyl diphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OP(O)O)OC1=CC=CC=C1 MDKCAJOWNAKRKU-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- NKDDWNXOKDWJAK-UHFFFAOYSA-N dimethoxymethane Chemical compound COCOC NKDDWNXOKDWJAK-UHFFFAOYSA-N 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- OGVJEUDMQQIAPV-UHFFFAOYSA-N diphenyl tridecyl phosphite Chemical compound C=1C=CC=CC=1OP(OCCCCCCCCCCCCC)OC1=CC=CC=C1 OGVJEUDMQQIAPV-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- WUDNUHPRLBTKOJ-UHFFFAOYSA-N ethyl isocyanate Chemical class CCN=C=O WUDNUHPRLBTKOJ-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 239000011964 heteropoly acid Substances 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
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- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 1
- OVWYEQOVUDKZNU-UHFFFAOYSA-N m-tolualdehyde Chemical compound CC1=CC=CC(C=O)=C1 OVWYEQOVUDKZNU-UHFFFAOYSA-N 0.000 description 1
- CCERQOYLJJULMD-UHFFFAOYSA-M magnesium;carbanide;chloride Chemical compound [CH3-].[Mg+2].[Cl-] CCERQOYLJJULMD-UHFFFAOYSA-M 0.000 description 1
- FRIJBUGBVQZNTB-UHFFFAOYSA-M magnesium;ethane;bromide Chemical compound [Mg+2].[Br-].[CH2-]C FRIJBUGBVQZNTB-UHFFFAOYSA-M 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- ORECYURYFJYPKY-UHFFFAOYSA-N n,n'-bis(2,2,6,6-tetramethylpiperidin-4-yl)hexane-1,6-diamine;2,4,6-trichloro-1,3,5-triazine;2,4,4-trimethylpentan-2-amine Chemical compound CC(C)(C)CC(C)(C)N.ClC1=NC(Cl)=NC(Cl)=N1.C1C(C)(C)NC(C)(C)CC1NCCCCCCNC1CC(C)(C)NC(C)(C)C1 ORECYURYFJYPKY-UHFFFAOYSA-N 0.000 description 1
- FSWDLYNGJBGFJH-UHFFFAOYSA-N n,n'-di-2-butyl-1,4-phenylenediamine Chemical compound CCC(C)NC1=CC=C(NC(C)CC)C=C1 FSWDLYNGJBGFJH-UHFFFAOYSA-N 0.000 description 1
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- LKTCWOYIQVKYIV-UHFFFAOYSA-N n-butyl-4-chloro-n-(1,2,2,6,6-pentamethylpiperidin-4-yl)-1,3,5-triazin-2-amine Chemical compound N=1C=NC(Cl)=NC=1N(CCCC)C1CC(C)(C)N(C)C(C)(C)C1 LKTCWOYIQVKYIV-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- WMPJPAMWRAOQSU-UHFFFAOYSA-N naphthalene-1,2-dicarbaldehyde Chemical compound C1=CC=CC2=C(C=O)C(C=O)=CC=C21 WMPJPAMWRAOQSU-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 1
- SSDSCDGVMJFTEQ-UHFFFAOYSA-N octadecyl 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)CCC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 SSDSCDGVMJFTEQ-UHFFFAOYSA-N 0.000 description 1
- MBAUOPQYSQVYJV-UHFFFAOYSA-N octyl 3-[4-hydroxy-3,5-di(propan-2-yl)phenyl]propanoate Chemical compound OC1=C(C=C(C=C1C(C)C)CCC(=O)OCCCCCCCC)C(C)C MBAUOPQYSQVYJV-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000004043 oxo group Chemical group O=* 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- FXLOVSHXALFLKQ-UHFFFAOYSA-N p-tolualdehyde Chemical compound CC1=CC=C(C=O)C=C1 FXLOVSHXALFLKQ-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Chemical class 0.000 description 1
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- 150000004714 phosphonium salts Chemical group 0.000 description 1
- ZWLUXSQADUDCSB-UHFFFAOYSA-N phthalaldehyde Chemical compound O=CC1=CC=CC=C1C=O ZWLUXSQADUDCSB-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002742 polystyrene-block-poly(ethylene/propylene) -block-polystyrene Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- CHQGQOSJGIBAGO-UHFFFAOYSA-N pyrene-1,2-dicarbaldehyde Chemical compound C1=CC=C2C=CC3=C(C=O)C(C=O)=CC4=CC=C1C2=C43 CHQGQOSJGIBAGO-UHFFFAOYSA-N 0.000 description 1
- RCYFOPUXRMOLQM-UHFFFAOYSA-N pyrene-1-carbaldehyde Chemical compound C1=C2C(C=O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 RCYFOPUXRMOLQM-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229940116351 sebacate Drugs 0.000 description 1
- CXMXRPHRNRROMY-UHFFFAOYSA-L sebacate(2-) Chemical compound [O-]C(=O)CCCCCCCCC([O-])=O CXMXRPHRNRROMY-UHFFFAOYSA-L 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 229940100515 sorbitan Drugs 0.000 description 1
- 239000001570 sorbitan monopalmitate Substances 0.000 description 1
- 235000011071 sorbitan monopalmitate Nutrition 0.000 description 1
- 229940031953 sorbitan monopalmitate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical compound CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 1
- JAELLLITIZHOGQ-UHFFFAOYSA-N tert-butyl propanoate Chemical compound CCC(=O)OC(C)(C)C JAELLLITIZHOGQ-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- XTTGYFREQJCEML-UHFFFAOYSA-N tributyl phosphite Chemical compound CCCCOP(OCCCC)OCCCC XTTGYFREQJCEML-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- CNUJLMSKURPSHE-UHFFFAOYSA-N trioctadecyl phosphite Chemical compound CCCCCCCCCCCCCCCCCCOP(OCCCCCCCCCCCCCCCCCC)OCCCCCCCCCCCCCCCCCC CNUJLMSKURPSHE-UHFFFAOYSA-N 0.000 description 1
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- ILLOBGFGKYTZRO-UHFFFAOYSA-N tris(2-ethylhexyl) phosphite Chemical compound CCCCC(CC)COP(OCC(CC)CCCC)OCC(CC)CCCC ILLOBGFGKYTZRO-UHFFFAOYSA-N 0.000 description 1
- WGKLOLBTFWFKOD-UHFFFAOYSA-N tris(2-nonylphenyl) phosphite Chemical compound CCCCCCCCCC1=CC=CC=C1OP(OC=1C(=CC=CC=1)CCCCCCCCC)OC1=CC=CC=C1CCCCCCCCC WGKLOLBTFWFKOD-UHFFFAOYSA-N 0.000 description 1
- LQEKTSMTEYLBLJ-UHFFFAOYSA-N tris(4-ethoxyphenyl)phosphane Chemical compound C1=CC(OCC)=CC=C1P(C=1C=CC(OCC)=CC=1)C1=CC=C(OCC)C=C1 LQEKTSMTEYLBLJ-UHFFFAOYSA-N 0.000 description 1
- UYUUAUOYLFIRJG-UHFFFAOYSA-N tris(4-methoxyphenyl)phosphane Chemical compound C1=CC(OC)=CC=C1P(C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 UYUUAUOYLFIRJG-UHFFFAOYSA-N 0.000 description 1
- FEVFLQDDNUQKRY-UHFFFAOYSA-N tris(4-methylphenyl) phosphite Chemical compound C1=CC(C)=CC=C1OP(OC=1C=CC(C)=CC=1)OC1=CC=C(C)C=C1 FEVFLQDDNUQKRY-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- JZNDMMGBXUYFNQ-UHFFFAOYSA-N tris(dodecylsulfanyl)phosphane Chemical compound CCCCCCCCCCCCSP(SCCCCCCCCCCCC)SCCCCCCCCCCCC JZNDMMGBXUYFNQ-UHFFFAOYSA-N 0.000 description 1
- QQBLOZGVRHAYGT-UHFFFAOYSA-N tris-decyl phosphite Chemical compound CCCCCCCCCCOP(OCCCCCCCCCC)OCCCCCCCCCC QQBLOZGVRHAYGT-UHFFFAOYSA-N 0.000 description 1
- PEXOFOFLXOCMDX-UHFFFAOYSA-N tritridecyl phosphite Chemical compound CCCCCCCCCCCCCOP(OCCCCCCCCCCCCC)OCCCCCCCCCCCCC PEXOFOFLXOCMDX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
1.支持体と、該支持体上に形成された二層からなる接着剤樹脂層と、該接着剤樹脂層上に形成された絶縁層及び再配線層と、チップ層と、モールド樹脂層とを備える半導体装置であって、
前記接着剤樹脂層が、前記支持体側から順に、光の照射により分解可能な樹脂を含む樹脂層Aと、非シリコーン系熱可塑性樹脂を含む樹脂層Bとからなり、前記光の照射により分解可能な樹脂が主鎖に縮合環を含む樹脂であり、前記非シリコーン系熱可塑性樹脂のガラス転移温度が200℃以上である半導体装置。
2.樹脂層Aの波長355nmの光の透過率が、20%以下である1の半導体装置。
3.樹脂層Aが、下記式(1)で表される繰り返し単位を含む樹脂Aを含む樹脂組成物Aの硬化物からなるものである1又は2の半導体装置。
4.前記非シリコーン系熱可塑性樹脂が、主鎖に芳香族環を含むものである1〜3のいずれかの半導体装置。
5.(a)支持体に、直接樹脂層Aを形成する工程、
(b)前記樹脂層A上に、樹脂層Bを形成する工程、
(c)前記樹脂層B上に、絶縁層を形成し、該絶縁層にパターンを形成する工程、
(d)前記パターンを形成した絶縁層上に、導電層を形成する工程、
(e)前記導電層上に、メッキレジスト層を形成し、該メッキレジスト層にパターンを形成し、前記メッキレジスト層のパターン間に前記導電層を露出させる工程、
(f)前記メッキレジスト層のパターン間に露出した導電層上に、再配線層を形成する工程、
(g)前記メッキレジスト層を除去後、露出した導電層を除去する工程、
(h)前記工程後、二層目の絶縁層を形成し、該二層目の絶縁層にパターンを形成し、前記再配線層を露出させる工程、
(i)前記再配線層上に、チップ層を形成する工程、
(j)前記チップ層と絶縁層との間に、アンダーフィル剤を充填する工程、及び
(k)前記チップ層上に、モールド樹脂層を形成する工程
を含む、1〜4のいずれかの半導体装置の製造方法。
6.支持体と、該支持体上に形成された二層からなる接着剤樹脂層と、該接着剤樹脂層上に形成された絶縁層と、メッキレジスト層とを備える積層体であって、
前記接着剤樹脂層が、前記支持体側から順に、光の照射により分解可能な樹脂を含む樹脂層Aと、非シリコーン系熱可塑性樹脂を含む樹脂層Bとからなり、前記光の照射により分解可能な樹脂が主鎖に縮合環を含む樹脂であり、前記非シリコーン系熱可塑性樹脂のガラス転移温度が200℃以上である積層体。
本発明の半導体装置は、支持体と、該支持体上に形成された二層からなる接着剤樹脂層と、該接着剤樹脂層上に形成された絶縁層及び再配線層と、チップ層と、モールド樹脂層とを備えるものである。前記接着剤樹脂層は、前記支持体側から順に、光の照射により分解可能な樹脂を含む樹脂層Aと、非シリコーン系熱可塑性樹脂を含む樹脂層Bとからなる。前記光の照射により分解可能な樹脂は、主鎖に縮合環を含む樹脂である。また、前記非シリコーン系熱可塑性樹脂は、そのガラス転移温度が200℃以上である。
前記支持体としては、透明基板、シリコン基板、セラミック基板等が挙げられるが、支持体を剥離する際に照射するレーザーの透過性の点から、透明基板が好ましい。前記透明基板としては、通常、ガラス基板や石英基板が用いられ、その厚さは、通常300〜1,500μmが好ましく、500〜1,100μmがより好ましい。支持体の形状は、特に限定されないが、円型又は角型が好適である。
接着剤樹脂層は、前記支持体側から順に、光の照射により分解可能な樹脂を含む樹脂層Aと、非シリコーン系熱可塑性樹脂を含む樹脂層Bとからなる。
樹脂層Aは、遮光性を有する樹脂層(遮光層)であり、波長355nmの光の透過率が20%以下であることが好ましく、18%以下であることがより好ましく、15%以下であることが更に好ましい。また、樹脂層Aは、波長300〜500nmの光の透過率が20%以下であることが好ましい。
R4−CHO
(式中、R4は、前記と同じ。)
樹脂層Bは、非シリコーン系熱可塑性樹脂(シロキサン骨格を有しない熱可塑性樹脂)を含み、該非シリコーン系熱可塑性樹脂のガラス転移温度が200℃以上であるものである。ガラス転移温度が200℃未満であると、樹脂層B上への絶縁層の形成時に樹脂層Bが流動、変形してしまい、絶縁層の界面において剥離又は絶縁層にクラックが発生するおそれがある。
[工程(a)]
工程(a)は、支持体に遮光性を有する樹脂層Aを形成する工程である。樹脂層Aを形成するための樹脂組成物Aが溶液である場合は、これをスピンコート、ロールコート等の方法により支持体上に塗布し、その溶媒の揮発条件に応じて、好ましくは80〜200℃、より好ましくは100〜180℃の温度でプリベークを行い、溶媒を揮発させることで、樹脂組成物層A'が形成される。また、樹脂組成物Aがフィルム状組成物である場合は、ラミネート法によって支持体上に樹脂組成物層A'が形成される。
工程(b)は、樹脂層A上に樹脂層Bを形成する工程である。樹脂組成物Bが溶液である場合は、スピンコート、ロールコート、ダイコート、印刷、ディッピング等の方法で樹脂層A上に塗布し、その後、ホットプレートやオーブンによって130〜190℃で加熱することで、樹脂層Bを形成することができる。
工程(c)は、樹脂層B上に再配線層の形成に用いられる絶縁層を形成し、該絶縁層にパターンを形成する工程である。前記絶縁層としては、特に限定されず、半導体分野における公知のものを使用することができるが、エポキシ樹脂、ポリイミド樹脂、シリコーン樹脂、変性シリコーン樹脂、ポリベンゾオキサゾール(PBO)、又はこれらの共重合体等の樹脂材料を用いて形成されたものが好ましい。
工程(d)は、前記パターンを形成した絶縁層上に導電層を形成する工程である。導電層は、例えばTi、Cu、Ti/Cu等の層をスパッタにより形成させる。この導電層は、後述する再配線層の形成に必要となる。前記導電層の厚さは、0.01〜2μmが好ましく、0.02〜1μmがより好ましい。
工程(e)は、前記導電層上に再配線層形成用のメッキレジスト層を形成し、該メッキレジスト層にパターンを形成し、前記メッキレジスト層のパターン間に前記導電層を露出させる工程である。前記メッキレジスト層は、特に限定されず、一般的に用いられているものを使用することができるが、好ましくはi線用ポジ型レジストがよい。前記レジスト層は、0.1〜100μm程度の厚さに形成されることが好ましい。前記メッキレジスト層に、例えば、フォトリソグラフィーによってパターンを形成することができる。
工程(f)は、前記メッキレジスト層のパターン間に露出した導電層上に再配線層を形成する工程である。導電層上にメッキを施すことで、再配線層を形成することができるが、メッキは、銅等の金属、銅/金合金、銅/ニッケル/金合金等の合金を電気メッキしたものが好ましい。前記再配線層の厚さは、0.5〜30μmが好ましく、1.0〜20μmがより好ましい。
工程(g)は、前記メッキレジスト層を除去し、更に露出した導電層を除去する工程である。前記メッキレジスト層は半導体分野における公知の方法で除去できるが、例えばシクロペンタノンやプロピレングリコールモノメチルエーテルアセテート等の溶媒を使用することで除去可能である。また、露出した導電層の除去についても半導体分野における公知の方法で除去できるが、Tiの場合はバッファードフッ酸を、Cuの場合はリン酸加水を使用することで除去可能である。
工程(h)は、前記工程(g)後、二層目の絶縁層を形成し、該二層目の絶縁層にパターンを形成し、前記再配線層を露出させる工程である。前記絶縁層としては工程(c)と同様のものを使用することができ、パターンを形成することで、開口部に次工程のチップを接続する際に必要となる再配線層部分を露出させることができる。
工程(i)は、前記二層目の絶縁層の開口により表面に露出した前記再配線層上にチップ層を形成する工程である。前記チップ層は、例えば、Sn、Ag、Au、Cu、Ni、Pd、Pt等の金属やその合金等を用いてメッキ等によってバンプを形成した基板を、前記再配線層上にフリップ接続させることで形成することができる。
工程(j)は、前記チップ層と絶縁層との間にアンダーフィル剤を充填する工程である。前記アンダーフィル剤は半導体分野における公知の方法で充填することができるが、例えばエポキシ系等の材料をキャピラリーによりチップ層と絶縁層との間に充填することができる。
工程(k)は、前記チップ層上にモールド樹脂層を形成する工程である。得られた半導体装置をモールド材料で更に封止することで、所望の半導体装置が得られる。モールド材料としては、例えば、シリコーン樹脂、エポキシ樹脂等の樹脂に、シリカ、酸化チタン等の無機フィラーを加えた材料が用いられる。このようなモールド材料を用いて、必要により加熱硬化させることで封止することができる。モールド樹脂層の厚さは、特に限定されないが、通常10〜500μm程度である。
[調製例1]
1,000mLのフラスコに、1,5−ジヒドロキシナフタレン80g(0.50モル)、6−ヒドロキシ−2−ナフトアルデヒド51.6g(0.30モル)及びメチルセロソルブ145gを加え、70℃で攪拌しながら20質量%パラトルエンスルホン酸メチルセロソルブ溶液20gを添加した。温度を85℃に上げ6時間攪拌した後、室温に冷却し、酢酸エチル800mLで希釈した。分液ロートに移し変え、脱イオン水200mLで洗浄を繰り返し、反応触媒と金属不純物を除去した。得られた溶液を減圧濃縮した後、残渣に酢酸エチル600mLを加え、ヘキサン2,400mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、下記式で表される繰り返し単位を含む樹脂A1を得た。樹脂A1のMwは3,200、分散度(Mw/Mn)は2.44であった。
樹脂A1 20質量部、酸発生剤AG1質量部、及び架橋剤としてニカラックMw390((株)三和ケミカル製)4質量部を、FC-4430(スリーエム社製フッ素系界面活性剤)0.1質量%を含むプロピレングリコールモノメチルエーテルアセテート(PGMEA)100質量部に溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって、樹脂組成物A1を得た。
1,000mLのフラスコに、1,5−ジヒドロキシナフタレン80g(0.50モル)、パラホルムアルデヒド9.0g(0.30モル)及びメチルセロソルブ145gを加え、70℃で攪拌しながら20質量%パラトルエンスルホン酸メチルセロソルブ溶液20gを添加した。温度を85℃に上げ6時間攪拌した後、室温に冷却し、酢酸エチル800mLで希釈した。分液ロートに移し変え、脱イオン水200mLで洗浄を繰り返し、反応触媒と金属不純物を除去した。得られた溶液を減圧濃縮した後、残渣に酢酸エチル600mLを加え、ヘキサン2,400mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、下記式で表される繰り返し単位を含む樹脂A2を得た。樹脂A2のMwは1,500、Mw/Mnは2.20であった。
樹脂A2 20質量部、酸発生剤AG1質量部、及び架橋剤としてニカラックMw390((株)三和ケミカル製)4質量部を、FC-4430(スリーエム社製)0.1質量%を含むPGMEA100質量部に溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって、樹脂組成物A2を得た。
1,000mLのフラスコに、1−ナフトール72g(0.50モル)、6−ヒドロキシ−2−ナフトアルデヒド51.6g(0.30モル)及びメチルセロソルブ145gを加え、70℃で攪拌しながら20質量%パラトルエンスルホン酸メチルセロソルブ溶液20gを添加した。温度を85℃に上げ6時間攪拌した後、室温に冷却し、酢酸エチル800mLで希釈した。分液ロートに移し変え、脱イオン水200mLで洗浄を繰り返し、反応触媒と金属不純物を除去した。得られた溶液を減圧濃縮した後、残渣に酢酸エチル600mLを加え、ヘキサン2,400mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、下記式で表される繰り返し単位を含む樹脂A3を得た。樹脂A3のMwは2,700、Mw/Mnは2.61であった。
樹脂A3 20質量部、酸発生剤AG1質量部、及び架橋剤としてニカラックMw390((株)三和ケミカル製)4質量部を、FC-4430(スリーエム社製)0.1質量%を含むPGMEA100質量部に溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって、樹脂組成物A3を得た。
1,000mLのフラスコに、2−メチルヒドロキシベンゼン32.4g(0.30モル)、6−ヒドロキシ−2−ナフトアルデヒド51.6g(0.30モル)及びメチルセロソルブ145gを加え、70℃で攪拌しながら20質量%パラトルエンスルホン酸メチルセロソルブ溶液20gを添加した。温度を85℃に上げ6時間攪拌した後、室温に冷却し、酢酸エチル800mLで希釈した。分液ロートに移し変え、脱イオン水200mLで洗浄を繰り返し、反応触媒と金属不純物を除去した。得られた溶液を減圧濃縮した後、残渣に酢酸エチル600mLを加え、ヘキサン2,400mLでポリマーを沈殿させた。沈殿したポリマーを濾別、回収後、減圧乾燥して、下記式で表される繰り返し単位を含む樹脂A4を得た。樹脂A4のMwは2,100、Mw/Mnは1.58であった。
樹脂A4 20質量部、酸発生剤AG1質量部、及び架橋剤としてニカラックMw390((株)三和ケミカル製)4質量部を、FC-4430(スリーエム社製)0.1質量%を含むPGMEA100質量部に溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって、樹脂組成物A4を得た。
ポリ−2,6−ジメチル−1,4−フェニレンエーテルであるポリフェニレンエーテル樹脂ザイロンS201A(旭化成(株)製、Mn=19,000)20gをp−キシレン180gに溶解し、10質量%のザイロンS201Aのp−キシレン溶液を得た。得られた溶液を0.2μmのメンブレンフィルターで濾過して、樹脂組成物B1を得た。また、樹脂のガラス転移温度(Tg)を測定したところ、216℃であった。
ポリアリレート樹脂であるユニファイナーM-2000H(ユニチカ(株)製)20gをシクロヘキサノン134gに溶解し、13質量%のユニファイナーM-2000Hのシクロヘキサノン溶液を得た。得られた溶液を0.2μmのメンブレンフィルターで濾過して、樹脂組成物B2を得た。また、樹脂のTgを測定したところ、270℃であった。
ポリイミド樹脂オーラムPL450C(三井化学(株)製)16gをN−メチル−2−ピロリドン184gに溶解し、8質量%のオーラムPL450CのN−メチル−2−ピロリドン溶液を得た。得られた溶液を0.2μmのメンブレンフィルターで濾過して、樹脂組成物B3を得た。また、樹脂のガラス転移温度(Tg)を測定したところ、250℃であった。
水素添加ポリスチレン系熱可塑性樹脂セプトン4033((株)クラレ製ポリスチレン−ポリ(エチレン/プロピレン)ブロック−ポリスチレン共重合体、スチレン含有量30質量%)10gをメシチレン190gに溶解し、5質量%のセプトン4033のメシチレン溶液を得た。得られた溶液を0.2μmのメンブレンフィルターで濾過して、樹脂組成物B4を得た。また、樹脂のTgを測定したところ、105℃であった。
樹脂組成物B1〜B4をそれぞれ180℃で10分間加熱して硬化させ、厚さ0.5mm、30mm×10mm角の測定シートを作製した。作製した測定シートを用いて、動的粘弾性測定装置((株)日立ハイテクサイエンス製DMA7100)によって、周波数1Hz、昇温速度3℃/分の条件で、0〜300℃の範囲で測定を行い、tanδのピーク(極大値)をTgとした。
[実施例1〜5、比較例1〜4]
直径200mm(厚さ:500μm)のガラス板に、樹脂組成物A1、A2、A3又はA4をスピンコート後、ホットプレートにて180℃で2分間、250℃で5分間加熱することにより、表1に示す膜厚で樹脂層Aを形成した。
更に、樹脂層A上に樹脂組成物B1、B2、B3又はB4をスピンコート後、ホットプレートにより150℃で5分間、180℃で5分間加熱することで、表1に示す膜厚で樹脂層Bを形成した。なお、比較例1は、樹脂層Aのみを形成したものであり、比較例2は、樹脂層Bのみを形成したものである。
その後、樹脂層A及び樹脂層B、又は樹脂層A若しくは樹脂層Bのみが成膜されたガラス板に対し、下記試験を行った。結果を表1に示す。なお、以下の順で評価を実施した。
特許第5417623号公報の実施例2のポリイミドシリコーン組成物を用い、樹脂層Bの上に膜厚4μmとなるようにスピンコートし、100℃で加熱して絶縁層を形成した。前記絶縁層に特許第5417623号公報の実施例2と同様の方法でパターンを形成した後、オーブンにて220℃で1時間加熱することにより硬化を行い、絶縁層を一層形成した。絶縁層及びその開口部に対し、スパッタリングにより、Ti層及びCu層をそれぞれ0.05μm及び0.20μmの膜厚で形成した。続いて、Cu層上に、特許第6003855号公報の実施例1のポジ型レジスト組成物を膜厚10μmとなるようにスピンコートによって塗布し、メッキレジスト層を形成した。前記メッキレジスト層にパターンを形成した後、開口部にCu電解メッキを施し、厚さ5μmとなるように配線を形成させた。その後、PGMEA洗浄によりメッキレジスト層を除去し、表面に露出したCu層を、リン酸加水を用いて室温で5分間エッチングを行い、続いてTi層をバッファードフッ酸を用いて室温で3分間エッチングを行い、更に、その上に前記ポリイミドシリコーン組成物を膜厚4μmとなるようにスピンコートし、前記と同じ方法で絶縁層を形成し、パターンを形成することでCu配線が形成された部分を開口させ、再びオーブンにて220℃で1時間加熱することにより硬化を行い、絶縁層の二層目を形成した。同様の方法で更にもう一層を形成し、絶縁層の三層目を形成した。
この積層体について、最後にガラス板側から目視で確認し、ガラス板から樹脂層Bまでの間に剥離が発生しなかった場合を良好として「○」で示し、異常が発生した場合を不良として「×」で示した。
SnAgバンプを有するチップを前記積層体のCu配線部に実装後、チップと絶縁層の間に特許第5579764号公報の実施例1のアンダーフィル剤を充填し、120℃にて0.5時間、更に165℃で3時間加熱硬化させた。硬化後、ガラス板側から目視で確認し、ガラス板から樹脂層Bまでの間に剥離が発生しなかった場合を良好として「○」で示し、異常が発生した場合を不良として「×」で示した。
モールド材料として、特開2016−088952号公報の実施例7の剥離フィルム(1)/樹脂フィルム/剥離フィルム(2)からなる複合フィルムであるフィルム状モールド樹脂を使用した。剥離フィルム(2)を剥離後、真空ラミネーター((株)タカトリ製、製品名:TEAM-100RF)を用いて、真空チャンバー内を真空度250Paに設定し、110℃で、樹脂フィルムを一括して前記二層目の絶縁層上に貼り付けた。常圧に戻した後、前記積層体を25℃に冷却して前記真空ラミネーターから取り出し、残りの剥離フィルム(1)を剥離した。得られた積層体は、イナートオーブンにて180℃、2時間加熱することにより樹脂の硬化を行い、モールド樹脂層を形成した。最後にガラス板側から目視で確認し、ガラス板から樹脂層Bまでの間に剥離が発生しなかった場合を良好として「○」で示し、剥離が発生した場合を不良として「×」で示した。
支持体の剥離性は、以下の方法で評価した。まず、(3)でモールドした積層体のモールド樹脂層面を真空吸着によって、吸着板にセットした。その後、支持体側から全面に355nmのレーザーを照射した。支持体を割ることなく剥離できた場合を「○」で示し、割れ等の異常が発生した場合を不良として「×」で示した。
前記剥離性試験終了後、溶媒による洗浄除去性の試験を以下の方法で評価した。絶縁層及びモールド樹脂層の積層体を、樹脂層Bを上にして洗浄溶媒に浸漬させた。洗浄溶媒としては樹脂組成物B1を使用した場合はp−キシレンを、樹脂組成物B2を使用した場合はシクロヘキサノンを、樹脂組成物B3を使用した場合はN−メチル−2−ピロリドンを用い、洗浄方法として5分間浸漬を行い、続けてイソプロピルアルコール(IPA)への浸漬にてリンスを行った。その後、外観を観察して残存する樹脂層Bの有無を目視でチェックした。樹脂層B由来の残存が認められないものを良好として「○」で示し、樹脂層B由来の残存が認められたものを不良として「×」で示した。
樹脂組成物A1、A2、A3又はA4を、厚さ500μmのガラス基板に膜厚0.3μmでスピンコート後、250℃で5分間熱硬化を行い、樹脂層Aを形成し、その透過率(波長355nm)を分光光度計(U-4100形、(株)日立ハイテクサイエンス製)を用いて測定した。透過率が20%以下の場合を良好として「○」で示し、20%よりも高い場合を不良として「×」で示した。なお、透過率を括弧内に示した。
Claims (7)
- 支持体と、該支持体上に形成された二層からなる接着剤樹脂層と、該接着剤樹脂層上に形成された絶縁層及び再配線層と、チップ層と、モールド樹脂層とを備える半導体装置であって、
前記接着剤樹脂層が、前記支持体側から順に、光の照射により分解可能な樹脂を含む樹脂層Aと、非シリコーン系熱可塑性樹脂を含む樹脂層Bとからなり、前記光の照射により分解可能な樹脂が主鎖に縮合環を含む樹脂であり、前記非シリコーン系熱可塑性樹脂のガラス転移温度が200℃以上であり、
樹脂層Aが、下記式(1)で表される繰り返し単位を含む樹脂Aを含むものである半導体装置。
- 樹脂Aが、ナフトール又はその誘導体とアルデヒド化合物とを重縮合反応させて得られるものであり、
前記ナフトール又はその誘導体が、1−ナフトール、2−ナフトール、2−メチル−1−ナフトール、4−メトキシ−1−ナフトール、7−メトキシ−2−ナフトール、1,2−ジヒドロキシナフタレン、1,3−ジヒドロキシナフタレン、2,3−ジヒドロキシナフタレン、1,4−ジヒドロキシナフタレン、1,5−ジヒドロキシナフタレン、1,6−ジヒドロキシナフタレン、2,6−ジヒドロキシナフタレン、1,7−ジヒドロキシナフタレン、2,7−ジヒドロキシナフタレン、1,8−ジヒドロキシナフタレン、5−アミノ−1−ナフトール、2−メトキシカルボニル−1−ナフトール、1−(4−ヒドロキシフェニル)ナフタレン、6−(4−ヒドロキシフェニル)−2−ナフトール、6−(シクロヘキシル)−2−ナフトール、1,1'−ビ−2−ナフトール、6,6'−ビ−2−ナフトール、9,9−ビス(6−ヒドロキシ−2−ナフチル)フルオレン、6−ヒドロキシ−2−ビニルナフタレン、1−ヒドロキシメチルナフタレン及び2−ヒドロキシメチルナフタレンから選ばれる少なくとも1種であり、
前記アルデヒド化合物が、下記式
R 4 −CHO
(式中、R 4 は、前記と同じ。)
で表されるものである請求項1記載の半導体装置。 - 樹脂層Aの波長355nmの光の透過率が、20%以下である請求項1又は2記載の半導体装置。
- 前記非シリコーン系熱可塑性樹脂が、主鎖に芳香族環を含むものである請求項1〜4のいずれか1項記載の半導体装置。
- (a)支持体に、直接樹脂層Aを形成する工程、
(b)前記樹脂層A上に、樹脂層Bを形成する工程、
(c)前記樹脂層B上に、絶縁層を形成し、該絶縁層にパターンを形成する工程、
(d)前記パターンを形成した絶縁層上に、導電層を形成する工程、
(e)前記導電層上に、メッキレジスト層を形成し、該メッキレジスト層にパターンを形成し、前記メッキレジスト層のパターン間に前記導電層を露出させる工程、
(f)前記メッキレジスト層のパターン間に露出した導電層上に、再配線層を形成する工程、
(g)前記メッキレジスト層を除去後、露出した導電層を除去する工程、
(h)前記工程後、二層目の絶縁層を形成し、該二層目の絶縁層にパターンを形成し、前記再配線層を露出させる工程、
(i)前記再配線層上に、チップ層を形成する工程、
(j)前記チップ層と絶縁層との間に、アンダーフィル剤を充填する工程、及び
(k)前記チップ層上に、モールド樹脂層を形成する工程
を含み、樹脂層Aが、下記式(1)で表される繰り返し単位を含む樹脂Aを含むものである、請求項1〜5のいずれか1項記載の半導体装置の製造方法。
- 支持体と、該支持体上に形成された二層からなる接着剤樹脂層と、該接着剤樹脂層上に形成された絶縁層と、メッキレジスト層とを備える積層体であって、
前記接着剤樹脂層が、前記支持体側から順に、光の照射により分解可能な樹脂を含む樹脂層Aと、非シリコーン系熱可塑性樹脂を含む樹脂層Bとからなり、前記光の照射により分解可能な樹脂が主鎖に縮合環を含む樹脂であり、前記非シリコーン系熱可塑性樹脂のガラス転移温度が200℃以上であり、
樹脂層Aが、下記式(1)で表される繰り返し単位を含む樹脂Aを含むものである積層体。
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