JP5575378B2 - 発光ダイオード及びその製造方法 - Google Patents

発光ダイオード及びその製造方法 Download PDF

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Publication number
JP5575378B2
JP5575378B2 JP2008188716A JP2008188716A JP5575378B2 JP 5575378 B2 JP5575378 B2 JP 5575378B2 JP 2008188716 A JP2008188716 A JP 2008188716A JP 2008188716 A JP2008188716 A JP 2008188716A JP 5575378 B2 JP5575378 B2 JP 5575378B2
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JP
Japan
Prior art keywords
semiconductor layer
electrode
type semiconductor
emitting diode
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008188716A
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English (en)
Japanese (ja)
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JP2009188370A (ja
JP2009188370A5 (https=
Inventor
ヨジン ユン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of JP2009188370A publication Critical patent/JP2009188370A/ja
Publication of JP2009188370A5 publication Critical patent/JP2009188370A5/ja
Application granted granted Critical
Publication of JP5575378B2 publication Critical patent/JP5575378B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07252—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads

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  • Led Devices (AREA)
JP2008188716A 2008-02-01 2008-07-22 発光ダイオード及びその製造方法 Expired - Fee Related JP5575378B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080010784A KR101457204B1 (ko) 2008-02-01 2008-02-01 발광 다이오드 및 그 제조방법
KR10-2008-0010784 2008-02-01

Publications (3)

Publication Number Publication Date
JP2009188370A JP2009188370A (ja) 2009-08-20
JP2009188370A5 JP2009188370A5 (https=) 2011-09-08
JP5575378B2 true JP5575378B2 (ja) 2014-08-20

Family

ID=40930793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008188716A Expired - Fee Related JP5575378B2 (ja) 2008-02-01 2008-07-22 発光ダイオード及びその製造方法

Country Status (4)

Country Link
US (1) US8049229B2 (https=)
JP (1) JP5575378B2 (https=)
KR (1) KR101457204B1 (https=)
TW (1) TWI381552B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441018B2 (en) 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
KR101497953B1 (ko) 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
JP5281612B2 (ja) 2010-05-26 2013-09-04 株式会社東芝 半導体発光装置及びその製造方法
KR101139915B1 (ko) * 2010-06-08 2012-04-30 부경대학교 산학협력단 내정전성 발광소자 및 그 제조방법
TWI515923B (zh) * 2011-08-30 2016-01-01 晶元光電股份有限公司 發光元件
TWI578565B (zh) * 2013-09-17 2017-04-11 隆達電子股份有限公司 發光二極體
KR102188993B1 (ko) 2013-11-15 2020-12-10 삼성디스플레이 주식회사 광원 유닛 및 이를 포함하는 백라이트 어셈블리
JP7161096B2 (ja) * 2018-06-29 2022-10-26 日亜化学工業株式会社 半導体素子の製造方法
CN114914334A (zh) * 2021-02-07 2022-08-16 京东方科技集团股份有限公司 发光芯片以及发光基板

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JPS6236827A (ja) * 1985-08-10 1987-02-17 Nippon Gakki Seizo Kk 選択エツチング方法
JPH0766280A (ja) * 1993-08-30 1995-03-10 Toshiba Corp 半導体装置の製造方法
JPH09331110A (ja) * 1996-06-12 1997-12-22 Mitsubishi Electric Corp 光半導体装置、および光半導体装置の製造方法
TW365071B (en) * 1996-09-09 1999-07-21 Toshiba Corp Semiconductor light emitting diode and method for manufacturing the same
JP3752339B2 (ja) * 1997-02-04 2006-03-08 ローム株式会社 半導体発光素子
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP2002043633A (ja) * 2000-07-25 2002-02-08 Stanley Electric Co Ltd 白色発光ダイオ−ド
JP2002261326A (ja) * 2001-03-02 2002-09-13 Nagoya Kogyo Univ 窒化ガリウム系化合物半導体素子の製造方法
JP4123830B2 (ja) * 2002-05-28 2008-07-23 松下電工株式会社 Ｌｅｄチップ
KR101095753B1 (ko) * 2002-08-01 2011-12-21 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치
JP3818297B2 (ja) * 2003-05-27 2006-09-06 松下電工株式会社 半導体発光素子
JP2005045162A (ja) * 2003-07-25 2005-02-17 Mitsubishi Electric Corp 半導体素子およびその製造方法
TWI244748B (en) * 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
KR100631898B1 (ko) * 2005-01-19 2006-10-11 삼성전기주식회사 Ｅｓｄ보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법
JP5008263B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
KR100631976B1 (ko) * 2005-03-30 2006-10-11 삼성전기주식회사 ３족 질화물 발광 소자
JP5138873B2 (ja) * 2005-05-19 2013-02-06 日亜化学工業株式会社 窒化物半導体素子
JP4819453B2 (ja) * 2005-09-12 2011-11-24 昭和電工株式会社 窒化ガリウム系半導体発光素子およびその製造方法
JP4777757B2 (ja) * 2005-12-01 2011-09-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP4994656B2 (ja) * 2005-12-20 2012-08-08 三洋電機株式会社 光半導体素子の製造方法
KR100723150B1 (ko) * 2005-12-26 2007-05-30 삼성전기주식회사 수직구조 질화물 반도체 발광소자 및 제조방법
JP4901241B2 (ja) * 2006-02-27 2012-03-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP4353232B2 (ja) * 2006-10-24 2009-10-28 ソニー株式会社 発光素子

Also Published As

Publication number Publication date
JP2009188370A (ja) 2009-08-20
TWI381552B (zh) 2013-01-01
KR101457204B1 (ko) 2014-11-03
TW200935626A (en) 2009-08-16
US8049229B2 (en) 2011-11-01
US20090194779A1 (en) 2009-08-06
KR20090084540A (ko) 2009-08-05

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