TWI381552B - 發光二極體以及其製造方法 - Google Patents

發光二極體以及其製造方法 Download PDF

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Publication number
TWI381552B
TWI381552B TW097129539A TW97129539A TWI381552B TW I381552 B TWI381552 B TW I381552B TW 097129539 A TW097129539 A TW 097129539A TW 97129539 A TW97129539 A TW 97129539A TW I381552 B TWI381552 B TW I381552B
Authority
TW
Taiwan
Prior art keywords
electrode
semiconductor layer
emitting diode
light
type semiconductor
Prior art date
Application number
TW097129539A
Other languages
English (en)
Chinese (zh)
Other versions
TW200935626A (en
Inventor
尹餘鎮
Original Assignee
首爾Ｏｐｔｏ儀器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 首爾Ｏｐｔｏ儀器股份有限公司 filed Critical 首爾Ｏｐｔｏ儀器股份有限公司
Publication of TW200935626A publication Critical patent/TW200935626A/zh
Application granted granted Critical
Publication of TWI381552B publication Critical patent/TWI381552B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07252—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads

Landscapes

  • Led Devices (AREA)
TW097129539A 2008-02-01 2008-08-04 發光二極體以及其製造方法 TWI381552B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080010784A KR101457204B1 (ko) 2008-02-01 2008-02-01 발광 다이오드 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200935626A TW200935626A (en) 2009-08-16
TWI381552B true TWI381552B (zh) 2013-01-01

Family

ID=40930793

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097129539A TWI381552B (zh) 2008-02-01 2008-08-04 發光二極體以及其製造方法

Country Status (4)

Country Link
US (1) US8049229B2 (https=)
JP (1) JP5575378B2 (https=)
KR (1) KR101457204B1 (https=)
TW (1) TWI381552B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441018B2 (en) 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
KR101497953B1 (ko) 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
JP5281612B2 (ja) 2010-05-26 2013-09-04 株式会社東芝 半導体発光装置及びその製造方法
KR101139915B1 (ko) * 2010-06-08 2012-04-30 부경대학교 산학협력단 내정전성 발광소자 및 그 제조방법
TWI515923B (zh) * 2011-08-30 2016-01-01 晶元光電股份有限公司 發光元件
TWI578565B (zh) * 2013-09-17 2017-04-11 隆達電子股份有限公司 發光二極體
KR102188993B1 (ko) 2013-11-15 2020-12-10 삼성디스플레이 주식회사 광원 유닛 및 이를 포함하는 백라이트 어셈블리
JP7161096B2 (ja) * 2018-06-29 2022-10-26 日亜化学工業株式会社 半導体素子の製造方法
CN114914334A (zh) * 2021-02-07 2022-08-16 京东方科技集团股份有限公司 发光芯片以及发光基板

Citations (4)

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US20010024460A1 (en) * 1997-02-21 2001-09-27 Masahiro Yamamoto Semiconductor light-emitting device
US20060157718A1 (en) * 2005-01-19 2006-07-20 Samsung Electro-Mechanics Co., Ltd. Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
US20060220057A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. Group III-nitride light emitting device
US20070145391A1 (en) * 2005-12-26 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Vertical type nitride semiconductor light emitting device and method of manufacturing the same

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JPS6236827A (ja) * 1985-08-10 1987-02-17 Nippon Gakki Seizo Kk 選択エツチング方法
JPH0766280A (ja) * 1993-08-30 1995-03-10 Toshiba Corp 半導体装置の製造方法
JPH09331110A (ja) * 1996-06-12 1997-12-22 Mitsubishi Electric Corp 光半導体装置、および光半導体装置の製造方法
TW365071B (en) * 1996-09-09 1999-07-21 Toshiba Corp Semiconductor light emitting diode and method for manufacturing the same
JP3752339B2 (ja) * 1997-02-04 2006-03-08 ローム株式会社 半導体発光素子
JP2002043633A (ja) * 2000-07-25 2002-02-08 Stanley Electric Co Ltd 白色発光ダイオ−ド
JP2002261326A (ja) * 2001-03-02 2002-09-13 Nagoya Kogyo Univ 窒化ガリウム系化合物半導体素子の製造方法
JP4123830B2 (ja) * 2002-05-28 2008-07-23 松下電工株式会社 Ｌｅｄチップ
KR101095753B1 (ko) * 2002-08-01 2011-12-21 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치
JP3818297B2 (ja) * 2003-05-27 2006-09-06 松下電工株式会社 半導体発光素子
JP2005045162A (ja) * 2003-07-25 2005-02-17 Mitsubishi Electric Corp 半導体素子およびその製造方法
TWI244748B (en) * 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
JP5008263B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
JP5138873B2 (ja) * 2005-05-19 2013-02-06 日亜化学工業株式会社 窒化物半導体素子
JP4819453B2 (ja) * 2005-09-12 2011-11-24 昭和電工株式会社 窒化ガリウム系半導体発光素子およびその製造方法
JP4777757B2 (ja) * 2005-12-01 2011-09-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP4994656B2 (ja) * 2005-12-20 2012-08-08 三洋電機株式会社 光半導体素子の製造方法
JP4901241B2 (ja) * 2006-02-27 2012-03-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP4353232B2 (ja) * 2006-10-24 2009-10-28 ソニー株式会社 発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010024460A1 (en) * 1997-02-21 2001-09-27 Masahiro Yamamoto Semiconductor light-emitting device
US20060157718A1 (en) * 2005-01-19 2006-07-20 Samsung Electro-Mechanics Co., Ltd. Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
US20060220057A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. Group III-nitride light emitting device
US20070145391A1 (en) * 2005-12-26 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Vertical type nitride semiconductor light emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
JP2009188370A (ja) 2009-08-20
JP5575378B2 (ja) 2014-08-20
KR101457204B1 (ko) 2014-11-03
TW200935626A (en) 2009-08-16
US8049229B2 (en) 2011-11-01
US20090194779A1 (en) 2009-08-06
KR20090084540A (ko) 2009-08-05

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