JP5575231B2 - ムライト質焼結体およびこれを用いた配線基板、並びにプローブカード - Google Patents
ムライト質焼結体およびこれを用いた配線基板、並びにプローブカード Download PDFInfo
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- JP5575231B2 JP5575231B2 JP2012512123A JP2012512123A JP5575231B2 JP 5575231 B2 JP5575231 B2 JP 5575231B2 JP 2012512123 A JP2012512123 A JP 2012512123A JP 2012512123 A JP2012512123 A JP 2012512123A JP 5575231 B2 JP5575231 B2 JP 5575231B2
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Description
が96%以上であるムライト質焼結体により構成されている。これにより、熱膨張係数(−50〜150℃)が3.2×10−6/℃〜3.9×10−6/℃であり、かつ耐薬品性の高いムライト質焼結体を得ることができる。
純度が99質量%、平均粒子径が1.8μmであり、格子定数aが0.7580nm(7.58Å)のムライト粉末100質量%に対して、純度が99%以上で平均粒径が1μmのAl2O3粉末、純度が99%で平均粒径が1.5μmのMn2O3粉末および純度が99%で平均粒径が1.0μmのTiO2粉末を表1に示すような割合で混合し、これに成形用の有機樹脂(有機バインダ)としてアクリル系バインダと、有機溶媒としてトルエンを混合してスラリーを調製した後、ドクターブレード法を用いて厚み200μmのグリーンシートを作製した。
(実施例2)
次に、実施例1に用いた原料粉末とともに、純度が99質量%のMoO3粉末を用いて、表3に示すような割合で混合した混合粉末を調製し、実施例1と同様の方法にてムライト質焼結体および配線基板を作製した。焼成する際のセッターとしてはアルミナ製の多孔質体を用いた。外観不良の発生率は作製したムライト質焼結体の外観検査を行って評価した。このとき試料数は39個とし、ムライト質焼結体の表面を実体顕微鏡を用いて観察し、ガラス相の染み出しおよび異物付着の有無を評価した。
11:絶縁基体
12:内部配線層
13:表面配線層
14:ビアホール導体
2 :プローブカード
21:測定端子
Claims (6)
- ムライトの含有量が79.3〜85.2質量%、アルミナの含有量が14.2〜19.8質量%およびMnTiO3の含有量が0.6〜1.1質量%であるとともに、結晶相として二酸化珪素を実質的に含まず、相対密度が96%以上であることを特徴とするムライト質焼結体。
- MnとTiとのモル比(Mn/Ti)が0.67〜1.00であるとともに、前記ムライト質焼結体中に存在する結晶の格子定数aが0.7560〜0.7569nmであるこ
とを特徴とする請求項1に記載のムライト質焼結体。 - さらにMoを含み、AlおよびSiをAl2O3換算およびSiO2換算した合計量を100質量%としたときに、前記MoをMoO3換算で0.4〜2.1質量%含有することを特徴とする請求項1または2に記載のムライト質焼結体。
- 前記MoとTiとのモル比(Mo/Ti)が0.125〜0.250であることを特徴とする請求項3に記載のムライト質焼結体。
- 請求項1乃至4のうちいずれかに記載のムライト質焼結体を絶縁基体とすることを特徴とする配線基板。
- 請求項5に記載の配線基板と、該配線基板の表面に設けられた表面配線層と、該表面配線層に接続され、半導体素子の電気特性を測定するための測定端子と、を備えていることを特徴とするプローブカード。
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