JP5570743B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5570743B2
JP5570743B2 JP2009055339A JP2009055339A JP5570743B2 JP 5570743 B2 JP5570743 B2 JP 5570743B2 JP 2009055339 A JP2009055339 A JP 2009055339A JP 2009055339 A JP2009055339 A JP 2009055339A JP 5570743 B2 JP5570743 B2 JP 5570743B2
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layer
substrate
conductivity type
diffusion layer
semiconductor
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JP2009055339A
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English (en)
Japanese (ja)
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JP2010212367A (ja
JP2010212367A5 (enExample
Inventor
純 森岡
浩司 白井
幸治 木村
博文 永野
和章 山浦
泰徳 岩津
翼 山田
有希 中邑
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Toshiba Corp
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Toshiba Corp
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Priority to JP2009055339A priority Critical patent/JP5570743B2/ja
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Publication of JP2010212367A5 publication Critical patent/JP2010212367A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
JP2009055339A 2009-03-09 2009-03-09 半導体装置 Active JP5570743B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009055339A JP5570743B2 (ja) 2009-03-09 2009-03-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009055339A JP5570743B2 (ja) 2009-03-09 2009-03-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2010212367A JP2010212367A (ja) 2010-09-24
JP2010212367A5 JP2010212367A5 (enExample) 2012-03-22
JP5570743B2 true JP5570743B2 (ja) 2014-08-13

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JP2009055339A Active JP5570743B2 (ja) 2009-03-09 2009-03-09 半導体装置

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JP (1) JP5570743B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106409914A (zh) * 2016-11-11 2017-02-15 电子科技大学 隔离型ldmos结构及其制造方法
CN106449759A (zh) * 2016-11-11 2017-02-22 电子科技大学 隔离型ldmos结构及其制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102309328B (zh) * 2011-10-19 2012-11-14 中国科学院深圳先进技术研究院 弥散张量成像方法及系统
CN105845729B (zh) * 2015-01-15 2019-04-09 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
JP7771708B2 (ja) * 2021-12-14 2025-11-18 富士電機株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395665A (ja) * 1986-10-13 1988-04-26 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH01149464A (ja) * 1987-12-04 1989-06-12 Nec Corp 半導体装置
JPH05198754A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
JPH10154755A (ja) * 1996-11-25 1998-06-09 Sony Corp 半導体装置の製造方法
JPH11251597A (ja) * 1998-02-27 1999-09-17 Denso Corp 半導体装置
SE519975C2 (sv) * 1999-06-23 2003-05-06 Ericsson Telefon Ab L M Halvledarstruktur för högspänningshalvledarkomponenter
JP2001135719A (ja) * 1999-11-01 2001-05-18 Denso Corp 半導体装置の素子分離構造
JP2003297845A (ja) * 2002-03-29 2003-10-17 Sony Corp 半導体装置およびその製造方法
JP4326835B2 (ja) * 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
US7737526B2 (en) * 2007-03-28 2010-06-15 Advanced Analogic Technologies, Inc. Isolated trench MOSFET in epi-less semiconductor sustrate
JP2009164460A (ja) * 2008-01-09 2009-07-23 Renesas Technology Corp 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106409914A (zh) * 2016-11-11 2017-02-15 电子科技大学 隔离型ldmos结构及其制造方法
CN106449759A (zh) * 2016-11-11 2017-02-22 电子科技大学 隔离型ldmos结构及其制造方法
CN106449759B (zh) * 2016-11-11 2019-08-02 电子科技大学 隔离型ldmos结构及其制造方法
CN106409914B (zh) * 2016-11-11 2019-08-23 电子科技大学 隔离型ldmos结构及其制造方法

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JP2010212367A (ja) 2010-09-24

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