JP5563257B2 - 光電変換装置、撮像システム、及び光電変換装置の製造方法 - Google Patents

光電変換装置、撮像システム、及び光電変換装置の製造方法 Download PDF

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Publication number
JP5563257B2
JP5563257B2 JP2009199017A JP2009199017A JP5563257B2 JP 5563257 B2 JP5563257 B2 JP 5563257B2 JP 2009199017 A JP2009199017 A JP 2009199017A JP 2009199017 A JP2009199017 A JP 2009199017A JP 5563257 B2 JP5563257 B2 JP 5563257B2
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Japan
Prior art keywords
insulator
photoelectric conversion
pixel array
conversion device
array region
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JP2009199017A
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English (en)
Japanese (ja)
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JP2011049503A5 (enExample
JP2011049503A (ja
Inventor
裕章 成瀬
隆一 三島
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009199017A priority Critical patent/JP5563257B2/ja
Priority to US12/853,547 priority patent/US8389923B2/en
Publication of JP2011049503A publication Critical patent/JP2011049503A/ja
Publication of JP2011049503A5 publication Critical patent/JP2011049503A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2009199017A 2009-08-28 2009-08-28 光電変換装置、撮像システム、及び光電変換装置の製造方法 Expired - Fee Related JP5563257B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009199017A JP5563257B2 (ja) 2009-08-28 2009-08-28 光電変換装置、撮像システム、及び光電変換装置の製造方法
US12/853,547 US8389923B2 (en) 2009-08-28 2010-08-10 Photoelectric conversion device, image sensing system, and method of manufacturing photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009199017A JP5563257B2 (ja) 2009-08-28 2009-08-28 光電変換装置、撮像システム、及び光電変換装置の製造方法

Publications (3)

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JP2011049503A JP2011049503A (ja) 2011-03-10
JP2011049503A5 JP2011049503A5 (enExample) 2012-09-06
JP5563257B2 true JP5563257B2 (ja) 2014-07-30

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JP2009199017A Expired - Fee Related JP5563257B2 (ja) 2009-08-28 2009-08-28 光電変換装置、撮像システム、及び光電変換装置の製造方法

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US (1) US8389923B2 (enExample)
JP (1) JP5563257B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3002347A1 (fr) * 2013-02-15 2014-08-22 Schneider Electric Ind Sas Procede de generation d'un fichier de modelisation d'une installation electrique, produit programme d'ordinateur, fichier de modelisation et dispositif electronique d'affichage associes
JP6346740B2 (ja) 2013-10-08 2018-06-20 オリンパス株式会社 撮像装置
JP6506536B2 (ja) * 2014-11-11 2019-04-24 キヤノン株式会社 半導体装置及びその製造方法、ならびにカメラ
US10714536B2 (en) 2018-10-23 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method to form memory cells separated by a void-free dielectric structure
KR102766214B1 (ko) * 2020-04-06 2025-02-12 에스케이하이닉스 주식회사 이미지 센싱 장치

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125814A (ja) * 1994-10-28 1996-05-17 Canon Inc 光電変換装置及び情報処理装置
JP2000150846A (ja) 1998-11-12 2000-05-30 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
US6492226B1 (en) * 2001-06-15 2002-12-10 Silicon Integrated Systems Corp. Method for forming a metal capacitor in a damascene process
JP2004304148A (ja) * 2002-09-27 2004-10-28 Sony Corp 固体撮像素子及びその製造方法
KR100585137B1 (ko) * 2004-03-10 2006-06-01 삼성전자주식회사 높은 집광 효율을 갖는 ｃｍｏｓ 이미지 소자 및 그제조방법
JP4646577B2 (ja) * 2004-09-01 2011-03-09 キヤノン株式会社 光電変換装置、その製造方法及び撮像システム
JP2006261597A (ja) * 2005-03-18 2006-09-28 Canon Inc 固体撮像装置、その製造方法及びカメラ
JP2007242697A (ja) * 2006-03-06 2007-09-20 Canon Inc 撮像装置および撮像システム
JP2007287818A (ja) 2006-04-14 2007-11-01 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP2008016722A (ja) * 2006-07-07 2008-01-24 Matsushita Electric Ind Co Ltd 固体撮像装置及びデジタルカメラ
JP5110820B2 (ja) * 2006-08-02 2012-12-26 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム
JP4315457B2 (ja) * 2006-08-31 2009-08-19 キヤノン株式会社 光電変換装置及び撮像システム
JP5305622B2 (ja) * 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
JP4110192B1 (ja) * 2007-02-23 2008-07-02 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
JP5159120B2 (ja) * 2007-02-23 2013-03-06 キヤノン株式会社 光電変換装置およびその製造方法
JP2009059824A (ja) * 2007-08-30 2009-03-19 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
US8319301B2 (en) * 2008-02-11 2012-11-27 Omnivision Technologies, Inc. Self-aligned filter for an image sensor
JP5288823B2 (ja) * 2008-02-18 2013-09-11 キヤノン株式会社 光電変換装置、及び光電変換装置の製造方法
JP2010161236A (ja) * 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法

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US8389923B2 (en) 2013-03-05
JP2011049503A (ja) 2011-03-10
US20110049332A1 (en) 2011-03-03

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