JP5562652B2 - シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置 - Google Patents

シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置 Download PDF

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JP5562652B2
JP5562652B2 JP2009552094A JP2009552094A JP5562652B2 JP 5562652 B2 JP5562652 B2 JP 5562652B2 JP 2009552094 A JP2009552094 A JP 2009552094A JP 2009552094 A JP2009552094 A JP 2009552094A JP 5562652 B2 JP5562652 B2 JP 5562652B2
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compounds
mixture
semiconductor
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isomers
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JP2010520241A (ja
JP2010520241A5 (enExample
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ジョン イー． アンソニー、
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University of Kentucky Research Foundation
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C07F7/0812—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP2009552094A 2007-03-07 2008-02-25 シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置 Expired - Fee Related JP5562652B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
EP07004633 2007-03-07
EP07004633.9 2007-03-07
EP07005029 2007-03-12
EP07005029.9 2007-03-12
EP07006166 2007-03-26
EP07006166.8 2007-03-26
PCT/EP2008/001482 WO2008107089A1 (en) 2007-03-07 2008-02-25 Silylethynylated heteroacenes and electronic devices made therewith

Related Child Applications (1)

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JP2014051016A Division JP2014193861A (ja) 2007-03-07 2014-03-14 シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置

Publications (3)

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JP2010520241A JP2010520241A (ja) 2010-06-10
JP2010520241A5 JP2010520241A5 (enExample) 2011-04-14
JP5562652B2 true JP5562652B2 (ja) 2014-07-30

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JP2009552094A Expired - Fee Related JP5562652B2 (ja) 2007-03-07 2008-02-25 シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置
JP2014051016A Pending JP2014193861A (ja) 2007-03-07 2014-03-14 シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置

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Country Link
EP (1) EP2132213B1 (enExample)
JP (2) JP5562652B2 (enExample)
KR (1) KR101591101B1 (enExample)
CN (1) CN101657458B (enExample)
GB (1) GB2460579B (enExample)
TW (1) TWI410427B (enExample)
WO (1) WO2008107089A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014193861A (ja) * 2007-03-07 2014-10-09 Univ Kentucky Res Found シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101926017B (zh) 2007-12-17 2013-09-25 3M创新有限公司 基于蒽的可溶液加工的有机半导体
CN102124015B (zh) * 2008-05-30 2015-03-11 3M创新有限公司 甲硅烷基乙炔基并五苯化合物和组合物及其制备和使用方法
CN102119164A (zh) * 2008-06-19 2011-07-06 3M创新有限公司 可溶液处理的有机半导体
KR101935644B1 (ko) 2008-10-31 2019-01-04 바스프 에스이 유기 전계 효과 트랜지스터에 사용하기 위한 디케토피롤로피롤 중합체
BRPI1011853A2 (pt) 2009-05-27 2019-09-24 Basf Se polímero, material, camada ou componente semicondutores orgânicos, dispositivo semicondutor, processos para a preparação de um dispositivo semicondutor orgânico, e de um polímero, e, uso do polímero e/ou do material, camada ou componente semicondutores orgãnicos.
EP2435446B8 (en) 2009-05-29 2017-02-22 3M Innovative Properties Company Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
KR101097313B1 (ko) * 2009-08-10 2011-12-23 삼성모바일디스플레이주식회사 유기 발광 소자
KR101626363B1 (ko) * 2009-12-16 2016-06-02 엘지디스플레이 주식회사 안트라세닐계 교호 공중합체, 그 제조 방법 및 이를 이용한 유기 박막 트랜지스터
WO2011076325A1 (en) 2009-12-23 2011-06-30 Merck Patent Gmbh Compositions comprising polymeric binders
WO2011076324A1 (en) 2009-12-23 2011-06-30 Merck Patent Gmbh Compositions comprising organic semiconducting compounds
KR102045196B1 (ko) 2010-04-12 2019-11-15 메르크 파텐트 게엠베하 개선된 성능을 갖는 조성물
US20130026421A1 (en) 2010-04-12 2013-01-31 Merck Patent Gmbh Composition and method for preparation of organic electronic devices
KR101839636B1 (ko) 2010-05-19 2018-03-16 바스프 에스이 유기 반도체 소자에 사용하기 위한 디케토피롤로피롤 중합체
WO2011147523A1 (en) 2010-05-27 2011-12-01 Merck Patent Gmbh Formulation and method for preparation of organic electronic devices
WO2012017005A2 (en) 2010-08-05 2012-02-09 Basf Se Polymers based on benzodiones
US9306172B2 (en) 2010-08-13 2016-04-05 Merck Patent Gmbh Anthra[2,3-b:7,6-b']dithiophene derivatives and their use as organic semiconductors
WO2012028244A1 (en) 2010-09-02 2012-03-08 Merck Patent Gmbh Process for preparing an organic electronic device
US20130161568A1 (en) * 2010-09-10 2013-06-27 Merck Patent Gesellschaft Mit Beschrankter Haftung Anthra[2,3-b:7,6-b']dithiophene Derivatives and their Use as Organic Semiconductors
CN103249739B (zh) * 2010-12-06 2016-02-17 默克专利有限公司 非线性并苯衍生物及其作为有机半导体的用途
GB201108864D0 (en) * 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Transistors and methods of making them
GB201108865D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Semiconductor compounds
ITMI20111447A1 (it) * 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
WO2013050401A2 (en) 2011-10-04 2013-04-11 Basf Se Polymers based on benzodiones
WO2013083506A1 (en) 2011-12-07 2013-06-13 Basf Se Diketopyrrolopyrrole polymers for use in organic semiconductor devices
GB201203159D0 (en) 2012-02-23 2012-04-11 Smartkem Ltd Organic semiconductor compositions
US9505877B2 (en) 2012-04-02 2016-11-29 Basf Se Phenanthro[9,10-B]furan polymers and small molecules for electronic applications
KR102079604B1 (ko) 2012-04-04 2020-04-08 바스프 에스이 디케토피롤로피롤 중합체 및 소분자
JP6207606B2 (ja) 2012-07-23 2017-10-04 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ジチエノベンゾフランポリマーおよび電子的な応用のための小分子
EP2917304B1 (en) 2012-11-07 2016-10-26 Basf Se Polymers based on naphthodiones
WO2014086722A1 (en) 2012-12-04 2014-06-12 Basf Se Functionnalized benzodithiophene polymers for electronic application
CN105324441B (zh) 2013-06-24 2018-01-02 巴斯夫欧洲公司 基于稠合二酮基吡咯并吡咯的聚合物
EP2818493A1 (en) 2013-06-25 2014-12-31 Basf Se Near infrared absorbing polymers for electronic applications
KR102091906B1 (ko) 2013-08-28 2020-03-20 스마트켐 리미티드 고분자 유기 반도체 조성물
CN103554138B (zh) * 2013-10-31 2016-02-17 兰州大学 一种具有有机场效应晶体管性质的材料及其制备方法
JP6181318B2 (ja) 2014-04-29 2017-08-16 サビック グローバル テクノロジーズ ビー．ブイ． 光電子工学用途のための高い導電性および吸収を有する小分子／オリゴマーの合成
JP2017017216A (ja) * 2015-07-02 2017-01-19 Dic株式会社 半導体組成物、半導体インク
WO2017008883A1 (en) 2015-07-15 2017-01-19 Merck Patent Gmbh Composition comprising organic semiconducting compounds
WO2017068009A1 (en) 2015-10-21 2017-04-27 Basf Se Polymers and compounds based on dipyrrolo[1,2-b:1',2'-g][2,6]naphthyridine-5,11-dione
WO2017202635A1 (en) 2016-05-25 2017-11-30 Basf Se Semiconductors
WO2018114883A1 (de) * 2016-12-22 2018-06-28 Merck Patent Gmbh Mischungen umfassend mindestens zwei organisch funktionelle verbindungen

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100303934B1 (ko) * 1997-03-25 2001-09-29 포만 제프리 엘 낮은작동전압을필요로하는유기반도체를갖는박막전장효과트랜지스터
US5936259A (en) * 1997-10-16 1999-08-10 Lucent Technologies Inc. Thin film transistor and organic semiconductor material thereof
CN1237626C (zh) * 1998-08-19 2006-01-18 普林斯顿大学理事会 有机光敏光电器件
JP5089986B2 (ja) * 2003-11-28 2012-12-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機半導体層およびその改善
US7382040B2 (en) * 2004-01-15 2008-06-03 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and display using same
JP2005253231A (ja) * 2004-03-05 2005-09-15 Fuji Electric Fa Components & Systems Co Ltd 無停電電源装置、無停電電源管理システム及び無停電電源管理方法
JP2006125270A (ja) * 2004-10-28 2006-05-18 Takeshi Uchida 回転駆動装置
WO2006054686A1 (ja) * 2004-11-18 2006-05-26 Konica Minolta Holdings, Inc. 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ
JP2006168085A (ja) * 2004-12-15 2006-06-29 Nissan Motor Co Ltd 情報化核酸含有木質材料及びその製造方法
JP2006283536A (ja) * 2005-03-31 2006-10-19 Kagawa Setsubi Kogyosho:Kk 配管用貫通穴埋め治具
US20060220007A1 (en) * 2005-04-05 2006-10-05 Bailey David B Acene compounds having a single terminal fused thiophene as semiconductor materials for thin film transistors and methods of making the same
JP2007067262A (ja) * 2005-09-01 2007-03-15 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2006151379A (ja) * 2005-11-21 2006-06-15 Yuji Nishimura 盗難防止兼用サドルカバー
JP5228907B2 (ja) * 2006-03-10 2013-07-03 コニカミノルタ株式会社 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
US7372071B2 (en) * 2006-04-06 2008-05-13 Xerox Corporation Functionalized heteroacenes and electronic devices generated therefrom
JP2007299852A (ja) * 2006-04-28 2007-11-15 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2007324288A (ja) * 2006-05-31 2007-12-13 Konica Minolta Holdings Inc 有機半導体膜及びその製造方法、有機薄膜トランジスタ及びその製造方法
JP2007335760A (ja) * 2006-06-16 2007-12-27 Fujifilm Corp 光電変換膜、並びに、該光電変換膜を含む太陽電池、光電変換素子、又は撮像素子
US20080042127A1 (en) * 2006-08-17 2008-02-21 Watson Mark D Transition metal free coupling of highly fluorinated and non-fluorinated pi-electron systems
JP2008103464A (ja) * 2006-10-18 2008-05-01 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
EP2132213B1 (en) * 2007-03-07 2013-05-15 University of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014193861A (ja) * 2007-03-07 2014-10-09 Univ Kentucky Res Found シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置

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Publication number Publication date
GB2460579A (en) 2009-12-09
CN101657458A (zh) 2010-02-24
EP2132213B1 (en) 2013-05-15
GB2460579B (en) 2011-11-02
KR101591101B1 (ko) 2016-02-03
TW200904821A (en) 2009-02-01
JP2014193861A (ja) 2014-10-09
KR20100015372A (ko) 2010-02-12
HK1140768A1 (en) 2010-10-22
GB0917170D0 (en) 2009-11-11
CN101657458B (zh) 2014-07-02
JP2010520241A (ja) 2010-06-10
WO2008107089A1 (en) 2008-09-12
TWI410427B (zh) 2013-10-01
EP2132213A1 (en) 2009-12-16

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